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NAND Flash Memory Laura M. Grupp * , John D. Davis , Steven Swanson - PowerPoint PPT Presentation

The Bleak Future of NAND Flash Memory Laura M. Grupp * , John D. Davis , Steven Swanson * * Non-volatile Systems Laboratory Department of Computer Science and Engineering University of California, San Diego Microsoft Research 1 Flashs


  1. The Bleak Future of NAND Flash Memory Laura M. Grupp * , John D. Davis  , Steven Swanson * * Non-volatile Systems Laboratory Department of Computer Science and Engineering University of California, San Diego  Microsoft Research 1

  2. Flash’s Future: Bright Reliability Performance Cost Per Capacity 2

  3. Flash’s Future: Bright Bleak Reliability Performance  Decreasing Write Budget Increasing Density  Cost Per Capacity 3

  4. Flash’s Future: Bright Bleak Reliability Performance  Decreasing Write Budget 8000 7000 Expected Performance Gap Write Latency (µs) 6000 5000 Increasing Density  4000 3000 Cost Per Capacity 2000 1000 0 Low Density Disk Drives Flash 4

  5. Flash’s Future: Bright Bleak Reliability Performance  Decreasing Write Budget 8000 7000 Expected Performance Gap Write Latency (µs) 6000 5000 Increasing Density  4000 What performance & scaling trends can we expect from our SSDs? 3000 Cost Per Capacity 2000 1000 Will the price decline be enough? 0 Low Density Disk Drives High Density Flash Flash 5

  6. Predicting Future Flash-Based SSDs Fixed SSD Architecture Flash Chip Trends Model’s Equations SSD Trends 6

  7. The Constant-Die-Count SSD (SSD-CDC) • Represents High-End ( FusionIO, Virident, OCZ) PCIe Channel 0 Link Flash Flash Flash Flash • Baseline Die 0 Die 1 Die 2 Die 3 – 96 dies Channel 1 – 320 GB Flash Flash Flash Flash Controller Die 0 Die 1 Die 2 Die 3 – 34nm, MLC . . . . . . . . . . . . • Assumptions Channel 23 – Constant die count – Unlimited PCIe Link Flash Flash Flash Flash Die 0 Die 1 Die 2 Die 3 – Channel Speed: 400MB/s 7

  8. The Metrics • Capacity • Latency • Throughput 8

  9. Increasing Density: Multi-bit Cells TLC MLC SLC Multi-Level Cell Triple-Level Cell Single-Level Cell (2 bits) (3 bits) (1 bit) “00” V TH Range V TH Range V TH Range “0” “01” “10” “1” “11” Floating Gate (modifies V TH ) 9

  10. Increasing Density: Moore’s Law 40 ITRS Technology 35 Trend Target 30 25nm-34nm Feature Size (nm) 25 20 6.5nm 15 10 Time 5 0 2009 2014 2019 2024 Year 10

  11. Best Possible Capacity by 2024 16384 TLC-3 4096 43x SSD Capacity (GB) MLC-2 SLC-1 1024 SSD-CDC 256 64 16 100 80 60 40 20 0 11 Feature Size (nm)

  12. The Metrics • Capacity: 43x • Latency • Throughput 12

  13. Collecting Flash Latency Trends • In-house flash testing rig • XUP Virtex-II • Daughter board • 10ns resolution • Chip Collection • 45 chips • 6 companies • 25nm-72nm • SLC, MLC, TLC 13

  14. Empirical Data 3.0 TLC-3 Chip Write Latency (ms) MLC-2 2.0 SLC-1 1.0 0.0 512 128 32 8 Feature Size (nm) 14

  15. Scaling Trends in Empirical Data 3.0 Chip Write Latency (ms) SLC-1 MLC-2 2.0 TLC-3 2x 1.0 2x 0.0 512 128 32 8 Feature Size (nm) 15

  16. Write Latency of SSD-CDC 3.0 SSD-CDC Write Latency (ms) TLC-3 MLC-2 2.0 SLC-1 2.6x 1.0 0.0 16 64 256 1024 4096 16384 16 SSD Capacity (GB)

  17. The Metrics • Capacity: 43x • Latency: 2.6x • Throughput 17

  18. Reduced Bandwidth SSD-CDC Write Bandwidth (MB/s) 3500 SLC-1 3000 MLC-2 2500 TLC-3 2000 1500 0.7x 1000 500 0 Increased Page Size MLC: 4kB, TLC 8kB 16 64 256 1024 4096 16384 18 SSD Capacity (GB)

  19. IOPs – 512B Random Accesses SLC-1 1000 SSD-CDC Write kIOPs MLC-2 800 TLC-3 600 Fastest HDD: 0.2 kIOPs Our Slowest SSD: 32.0 kIOPs 400 0.4x 200 0 16 64 256 1024 4096 16384 SSD Capacity (GB) 19

  20. The Metrics • Capacity: 43x • Latency: 2.6x • Throughput: 0.7x, 0.4x 20

  21. Conclusion • Chip Scaling: A Mixed Bag – Improved: Density and Cost – In Decline: Performance and Reliability • SSDs: Not always a perfect replacement for disks – Do Get: High Capacity & High IOPs – Don’t Get: Low Cost & Low Latency 21

  22. Questions? The Bleak Future of NAND Flash Memory Laura M. Grupp, John D. Davis , Steven Swanson 22

  23. The Model’s Equations Metric Equation 2 𝑪𝒋𝒖𝒕𝑸𝒇𝒔𝑫𝒇𝒎𝒎 𝒒𝒔𝒑𝒌𝒇𝒅𝒖𝒇𝒆 𝑮𝒇𝒃𝒖𝒗𝒔𝒇𝑻𝒋𝒜𝒇 𝒄𝒃𝒕𝒇𝒎𝒋𝒐𝒇 Capacity Capacity Baseline × × 𝑪𝒋𝒖𝒕𝑸𝒇𝒔𝑫𝒇𝒎𝒎 𝒄𝒃𝒕𝒇𝒎𝒋𝒐𝒇 𝑮𝒇𝒃𝒖𝒗𝒔𝒇𝑻𝒋𝒜𝒇 𝒒𝒔𝒑𝒌𝒇𝒅𝒖𝒇𝒆 Latency 𝑫𝒊𝒋𝒒𝑴𝒃𝒖𝒇𝒐𝒅𝒛 + 𝑷𝒘𝒇𝒔𝒊𝒇𝒃𝒆𝑴𝒃𝒖𝒇𝒐𝒅𝒛 𝒆𝒋𝒇𝒕𝑸𝒇𝒔𝑫𝒊𝒃𝒐𝒐𝒇𝒎 − 1 × 𝑸𝒃𝒉𝒇𝑻𝒋𝒜𝒇 Bandwidth 𝑫𝒊𝒃𝒐𝒐𝒇𝒎𝑫𝒑𝒗𝒐𝒖 × , 𝑃𝑞𝑓𝑠𝑏𝑢𝑗𝑝𝑜 ≫ 𝐶𝑣𝑡 𝑇𝑞𝑓𝑓𝑒 𝑫𝒊𝒋𝒒𝑴𝒃𝒖𝒇𝒐𝒅𝒛 𝒆𝒋𝒇𝒕𝑸𝒇𝒔𝑫𝒊𝒃𝒐𝒐𝒇𝒎 − 1 IOPs 𝑫𝒊𝒃𝒐𝒐𝒇𝒎𝑫𝒑𝒗𝒐𝒖 × , 𝑃𝑞𝑓𝑠𝑏𝑢𝑗𝑝𝑜 ≫ 𝐶𝑣𝑡 𝑇𝑞𝑓𝑓𝑒 𝑫𝒊𝒋𝒒𝑴𝒃𝒖𝒇𝒐𝒅𝒛 Measured Value Baseline SSD Design Projected SSD Design 23 Constant SSD Parameter

  24. Lifetime 24

  25. Error Rates 25

  26. Price 26

  27. Read Latency 27

  28. Read Bandwidth 28

  29. Read IOPS – 512B Random Access 29

  30. Scaling Trends in Empirical Data 3.0 Chip Write Latency (ms) SLC-1 MLC-2 2.0 TLC-3 1.0 0.0 508 408 308 208 108 8 Feature Size (nm) 30

  31. Increasing Density: Multi-bit Cells TLC MLC SLC Multi-Level Cell Triple-Level Cell Single Level Cell (3 bits) (2 bits) (1 bit) “00” V TH Range V TH Range V TH Range “0” “01” “10” “1” “11” “MLC - 1” V TH Range “0x” Floating Gate Lower Price (modifies V TH ) Native Number of per Bit “1x” Technology Stored Bits 31

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