MECetchBOND CZ MECetchBOND CZ Copper Surface Treatment System for - - PowerPoint PPT Presentation

MECetchBOND 1

MEC COMPANY LTD.

MECetchBOND CZ MECetchBOND CZ

Copper Surface Treatment System for Advanced PWBs

MECetchBOND 2

MEC COMPANY LTD.

The Trends of Increased Functionality and Reduced Size of Portable Wireless Products and Routing Densities for PWB

Printed Wiring Board Printed Wiring Board

MECetchBOND 3

MEC COMPANY LTD.

Customers Using MECetchBOND Customers Using MECetchBOND

Japan Asia Europe USA

95 U se rs (142 L ine s) 45 U se rs(73 L ine s) 41 U se rs(51 L ine s) 8 U se rs(10 L ine s)

In 2004

MECetchBOND 4

MEC COMPANY LTD.

Application of MECetchBOND Application of MECetchBOND

BGA DIE-PAD SI

Cu/ Via-fill R e sin Cu/ Pre pre g or R CC Cu/ Build-up R e sin Cu/ Solde r Mask BGA Solde r Mask/ Cu Die -pad/ E nc apsulating Re sin

MECetchBOND 5

MEC COMPANY LTD.

• Excellent adhesion to resins
• Fully conveyorized process
• Easy to control
• Proven process
• Reasonable cost
• Environmental friendly

Benefits of MECetchBOND Benefits of MECetchBOND

MECetchBOND 6

MEC COMPANY LTD.

Copper Surface Topography Copper Surface Topography

Buff Scrubbing ×5,000 Jet Scrubbing ×5,000 MECetchBOND CZ-8100 ×5,000 Black Oxide ×10,000 H2SO4-H2O2 ×5,000

This chemistry is essentially a micro-etching process that roughens the copper surface, resulting in a unique topography.

MECetchBOND 7

MEC COMPANY LTD.

MECetchBOND Process Flow MECetchBOND Process Flow

Rinse Rinse Ac id Rinse Dry

Can c r e ate ste e pe r pe aks and valle ys

Anc hor E ffe c t

MECetchBOND CZ-8100

Standard 35℃（ 25～40℃）

Spray pressure 0.15～0.2MPa

Etching amount 0.5～3μm 20～30℃, 10sec

Spray pressure 0.03～0.06MPa

Rinse

MAC-5330 / 3～5%HCl

Pr e -tr e atme nt for ME Ce tc hBOND 20～30℃, 10～30sec

Spray pressure 0.1～0.2MPa

MECetchBOND 8

MEC COMPANY LTD.

Advantages of MECetchBOND Advantages of MECetchBOND

ME Ce tc hBOND CZ-8100

• Can E

nhanc e Me c hanic al Bonding (Anc hor E ffe c t)

• Can Give Highe r

Adhe sion

• Simple Contr
• l
• F

ully c onve yor ize d pr

• c e ss

MECetchBOND 9

MEC COMPANY LTD.

Physical Properties & Control Physical Properties & Control

【

Usage】

Make -up: U se CZ-8100M as it is. Re ple nish: U se CZ-8100Ras it is. 【

Contr

• l】
• 1. Re ple nish the dr

agge d-o ut amo unt.

• 2. Cu Co nc e ntratio n (15-30 g/ L

)

• 3. Co nc e ntratio n/ Dilutio n (-10- +10%)

Appe ar anc e Spe c ific Gr avity (20℃) pH Blue transpare nt

1.13±0.01 1.11±0.01 3.4±0.5 3.1±0.5

Re ple nishe r CZ- 8100R

Co lo rle ss – Slight ye llow transpare nt

Make -up Soln. CZ- 8100M

ME Ce tc hBOND CZ-8100

MECetchBOND 10

MEC COMPANY LTD.

CZ CZ-

• 8100 Treated Topography

8100 Treated Topography

CCL Plated Copper

0.5µm etching 1 µm etching 2 µm etching

SEM ×5,000

Can decide some roughening variation for some application

MECetchBOND 11

MEC COMPANY LTD.

Operation Temp. vs. Etching Rate Operation Temp. vs. Etching Rate

. 5 1 1 . 5 2 2 . 5 3 3 . 5 4 2 2 5 3 3 5 4 4 5 O p e r a t i

• n

T e mp . （ ℃） E t c h i n g R a t e （ μ m/ mi n ）

MEC Test Machine Data Standard Operation Conditions at 35℃

MECetchBOND 12

MEC COMPANY LTD.

. 5 1 1 . 5 2 2 . 5 3 3 . 5 4 1 1 5 2 2 5 3 3 5 C

• p

p e r C

• c

e n t r a t i

• n

（ g / L ) E t c h i n g R a t e （ μm / m i n ）

MEC Test Machine Data Control Range 15 – 30g/L

Copper Conc. vs. Etching Rate Copper Conc. vs. Etching Rate

MECetchBOND 13

MEC COMPANY LTD.

Etching Mechanism Etching Mechanism

Cu + Cu(Ⅱ)An 2Cu(Ⅰ)An/2 2Cu(Ⅰ) An/2 + n/4O2 + nAH 2Cu(Ⅱ) An + n/2H2O Air A : Weak Complexer n : Coordination number

Copper reacts with a Cu(Ⅱ) complex in the solution to form a Cu(Ⅰ)

• complex. The formed Cu(Ⅰ) complex in the solution reacts with oxygen to

generate a Cu(Ⅱ) complex. Such reactions accelerate dissolving of copper.

MECetchBOND 14

MEC COMPANY LTD.

Topography Forming Mechanism Topography Forming Mechanism

How can such a unique topography be obtained ?

Coppe r grains

MECetchBOND CZ attacks

boundaries faster than crystals. Well roughened topography is left.

MECetchBOND 15

MEC COMPANY LTD.

Etching Amount for Applications Etching Amount for Applications

For pretreatment of Solder Mask Printing

Etching amount：

0.5～2.0μm

For pretreatment of Micro-via Formation

Etching amount：

1.5～3.0μm

For pretreatment of Dry Film Lamination

Etching amount：

0.5～1.0μm

For pretreatment of Prepreg Lamination

Etching amount：

1.5～3.0μm

MECetchBOND 16

MEC COMPANY LTD.

Adhesion (Solder Mask) Adhesion (Solder Mask)

MECetchBOND CZ-8100 (1.5 μm) Conventional Microetchant (2μm ) Buff Scrubbing

No Peel off of Solder Mask with MECetchBOND Process

Solder Mask Printing → Cross-cut → 3.5%HCl dipping(R.T., 10min) → Rinse&Dry → Tape on the cross-cuts → Peel SEM ×3,500 Tape Side

• Tape Peel Test-

MECetchBOND 17

MEC COMPANY LTD.

Adhesion (Dry Film) Adhesion (Dry Film)

MECetchBOND CZ-8100 (1 μm) Conventional Microetchant (2μm ) Buff Scrubbing

No Peel off of Dry Film with MECetchBOND Process

Dry Film Lamination → Cross-cut → 3.5%HCl dipping(R.T., 1min) → Rinse&Dry → Tape on the cross-cuts → Peel SEM ×3,500 Tape Side

• Tape Peel Test-

MECetchBOND 18

MEC COMPANY LTD.

Adhesion (Dry Film) Adhesion (Dry Film)

Dense Patterns Column Pattern Diameter / Space＝20μm/20μm Sparse Patterns Column Pattern Diameter/ Space ＝20μm/60μm

1 2 3 4 5 6 7 8 9 1 2 m j 1 4 m j ８ ０ m j L i g h t I n t e n s i t y P e r c e n t C

• l

u m n R e m a i n i n g （ % )

H 2 S O 4

• H

2 O 2 B u f f i n g C Z

• 8

1

1 2 3 4 5 6 7 8 9 1 2 m j 1 4 m j ８ ０ m j L i g h t I n t e n s i t y P e r c e n t C

• l

u mn R e ma i n i n （ % )

H 2 S O 4

• H

2 O 2 B u f f i n g C Z

• 8

1

Colum umn n patt tterns ns with h 10μm-30μm diameter are formed latt tticedly. y. Eva valua uati tion Cond nditi tions ns : sp sparse se space / dens nse sp space

MECetchBOND 19

MEC COMPANY LTD.

Resolution (Dry Film) Resolution (Dry Film)

Procedur ures

• Measur

sure the he ta targete ted width th and the the actua ual width. th.

• A cond

nditi tion n of ligh ght int ntens nsity ty is s ; 80mj/cm2,140mj/cm2 and nd 200mj/cm2.

2 7 2 8 2 9 3 3 1 3 2 3 3 3 4 3 5 2 m j 1 4 m j ８ ０ m j L i g h t I n t e n s i t y P a t t e r n W i d t h （ T a r g e t ３ ０ μm ） H 2 S O 4

• H

2 O 2 B u f f i n g C Z

• 8

1

Line/Space=30/30μm

MECetchBOND 20

MEC COMPANY LTD.

Summary of MECetchBOND Summary of MECetchBOND

• Adhesion between copper surface and resin has

become more and more important.

• MECetchBOND CZ can enhance mechanical

bonding.

• MECetchBOND system can give excellent

adhesion and high reliability.

• MECetchBOND system is what you need for

various applications!