MECetchBOND CZ MECetchBOND CZ Copper Surface Treatment System for - PowerPoint PPT Presentation

MECetchBOND CZ MECetchBOND CZ Copper Surface Treatment System for Advanced PWBs MEC COMPANY LTD. MECetchBOND 1

Printed Wiring Board Printed Wiring Board The Trends of Increased Functionality and Reduced Size of Portable Wireless Products and Routing Densities for PWB MEC COMPANY LTD. MECetchBOND 2

Customers Using MECetchBOND Customers Using MECetchBOND Japan 95 U se rs (142 L ine s) Asia 45 U se rs(73 L ine s) Europe 41 U se rs(51 L ine s) USA 8 U se rs(10 L ine s) In 2004 MEC COMPANY LTD. MECetchBOND 3

Application of MECetchBOND Application of MECetchBOND Die -pad/ E nc apsulating Re sin BGA Solde r Mask/ Cu SI Cu/ Build-up R e sin DIE-PAD BGA Cu/ Solde r Mask Cu/ Pre pre g or R CC Cu/ Via-fill R e sin MEC COMPANY LTD. MECetchBOND 4

Benefits of MECetchBOND Benefits of MECetchBOND • Excellent adhesion to resins • Fully conveyorized process • Easy to control • Proven process • Reasonable cost • Environmental friendly MEC COMPANY LTD. MECetchBOND 5

Copper Surface Topography Copper Surface Topography Black Oxide × 10,000 Buff Scrubbing × 5,000 MECetchBOND CZ-8100 × 5,000 H 2 SO 4 -H 2 O 2 × 5,000 Jet Scrubbing × 5,000 This chemistry is essentially a micro-etching process that roughens the copper surface, resulting in a unique topography. MEC COMPANY LTD. MECetchBOND 6

MECetchBOND Process Flow MECetchBOND Process Flow 20 ～ 30 ℃ , 10 ～ 30sec MAC-5330 / 3 ～ 5%HCl Pr e -tr e atme nt for Spray pressure 0.1 ～ 0.2MPa ME Ce tc hBOND Rinse Standard 35 ℃（ 25 ～ 40 ℃） Spray pressure 0.15 ～ 0.2MPa Can c r e ate ste e pe r MECetchBOND CZ-8100 pe aks and valle ys Etching amount 0.5 ～ 3 μ m Anc hor E ffe c t Rinse 20 ～ 30 ℃ , 10sec Ac id Rinse Spray pressure 0.03 ～ 0.06MPa Rinse Dry MEC COMPANY LTD. MECetchBOND 7

Advantages of MECetchBOND Advantages of MECetchBOND ME Ce tc hBOND CZ-8100 - Can E nhanc e Me c hanic al Bonding (Anc hor E ffe c t) - Can Give Highe r Adhe sion - Simple Contr ol - F ully c onve yor ize d pr oc e ss MEC COMPANY LTD. MECetchBOND 8

Physical Properties & Control Physical Properties & Control ME Ce tc hBOND Re ple nishe r Make -up Soln. CZ-8100 CZ- 8100R CZ- 8100M Co lo rle ss – Slight Appe ar anc e Blue transpare nt ye llow transpare nt Spe c ific 1.11 ± 0.01 1.13 ± 0.01 avity (20 ℃ ) Gr 3.4 ± 0.5 3.1 ± 0.5 pH 【 Usage 】 Make -up: U se CZ-8100M as it is. Re ple nish: U se CZ-8100R as it is. 【 ol 】 Contr 1. Re ple nish the dr agge d-o ut amo unt. 2. Cu Co nc e ntratio n (15-30 g/ L ) 3. Co nc e ntratio n/ Dilutio n (-10- +10%) MEC COMPANY LTD. MECetchBOND 9

CZ- -8100 Treated Topography 8100 Treated Topography CZ SEM × 5,000 1 µm etching 0.5µm etching 2 µm etching CCL Plated Copper Can decide some roughening variation for some application MEC COMPANY LTD. MECetchBOND 10

Operation Temp. vs. Etching Rate Operation Temp. vs. Etching Rate MEC Test Machine Data 4 ） 3 . 5 n mi 3 μ m/ 2 . 5 （ e 2 t a R 1 . 5 g n i 1 h c t 0 . 5 E 0 2 0 2 5 3 0 3 5 4 0 4 5 O p e r a t i o n T e mp . （ ℃） Standard Operation Conditions at 35 ℃ MEC COMPANY LTD. MECetchBOND 11

Copper Conc. vs. Etching Rate Copper Conc. vs. Etching Rate MEC Test Machine Data 4 3 . 5 ） n i m 3 / μm 2 . 5 （ e 2 t a R 1 . 5 g n i h 1 c t E 0 . 5 0 1 0 1 5 2 0 2 5 3 0 3 5 C o p p e r C o c e n t r a t i o n （ g / L ) Control Range 15 – 30g/L MEC COMPANY LTD. MECetchBOND 12

Etching Mechanism Etching Mechanism Cu + Cu( Ⅱ )A n 2Cu( Ⅰ )A n/2 Air 2Cu( Ⅰ ) A n/2 + n/4O 2 + nAH 2Cu( Ⅱ ) A n + n/2H 2 O A : Weak Complexer n : Coordination number Copper reacts with a Cu( Ⅱ ) complex in the solution to form a Cu( Ⅰ ) complex. The formed Cu( Ⅰ ) complex in the solution reacts with oxygen to generate a Cu( Ⅱ ) complex. Such reactions accelerate dissolving of copper. MEC COMPANY LTD. MECetchBOND 13

Topography Forming Mechanism Topography Forming Mechanism How can such a unique topography be obtained ? Coppe r grains MECetchBOND CZ attacks boundaries faster than crystals. Well roughened topography is left. MEC COMPANY LTD. MECetchBOND 14

Etching Amount for Applications Etching Amount for Applications  For pretreatment of Solder Mask Printing  Etching amount ： 0.5 ～ 2.0 μ m  For pretreatment of Dry Film Lamination  Etching amount ： 0.5 ～ 1.0 μ m  For pretreatment of Prepreg Lamination  Etching amount ： 1.5 ～ 3.0 μ m  For pretreatment of Micro-via Formation  Etching amount ： 1.5 ～ 3.0 μ m MEC COMPANY LTD. MECetchBOND 15

Adhesion (Solder Mask) Adhesion (Solder Mask) - Tape Peel Test- Solder Mask Printing → Cross-cut → 3.5%HCl dipping(R.T., 10min) → Rinse&Dry → Tape on the cross-cuts → Peel MECetchBOND CZ-8100 Conventional (1.5 μ m) Microetchant (2 μ m ) Buff Scrubbing SEM × 3,500 Tape Side No Peel off of Solder Mask with MECetchBOND Process MEC COMPANY LTD. MECetchBOND 16

Adhesion (Dry Film) Adhesion (Dry Film) - Tape Peel Test- Dry Film Lamination → Cross-cut → 3.5%HCl dipping(R.T., 1min) → Rinse&Dry → Tape on the cross-cuts → Peel MECetchBOND CZ-8100 Conventional (1 μ m) Microetchant (2 μ m ) Buff Scrubbing SEM × 3,500 Tape Side No Peel off of Dry Film with MECetchBOND Process MEC COMPANY LTD. MECetchBOND 17

Adhesion (Dry Film) Adhesion (Dry Film) h 10 μ m-30 μ m diameter are Colum umn n patt tterns ns with formed latt tticedly. y. Eva valua uati tion Cond nditi tions ns : sp sparse se space / dens nse sp space Dense Patterns Sparse Patterns Column Pattern Diameter / Space ＝ 20 μ m/20 μ m Column Pattern Diameter/ Space ＝ 20 μ m/60 μ m 1 0 0 1 0 0 g n ) i 9 0 % 9 0 n i （ a 8 0 n i 8 0 m n i e 7 0 7 0 ma R 6 0 6 0 n e ) m % R 5 0 5 0 u （ l mn o 4 0 4 0 H 2 S O 4 - H 2 O 2 H 2 S O 4 - H 2 O 2 C u l t 3 0 3 0 B u f f i n g o B u f f i n g n e C 2 0 2 0 c C Z - 8 1 0 0 t C Z - 8 1 0 0 r n e 1 0 1 0 e P c 0 r 0 e P 2 0 0 m j 1 4 0 m j ８ ０ m j 2 0 0 m j 1 4 0 m j ８ ０ m j L i g h t I n t e n s i t y L i g h t I n t e n s i t y MEC COMPANY LTD. MECetchBOND 18

Resolution (Dry Film) Resolution (Dry Film) Procedur ures - Measur sure the he ta targete ted width th and the the actua ual width. th. - A cond nditi tion n of ligh ght int ntens nsity ty is s ; 80mj/cm 2 ,140mj/cm 2 and nd 200mj/cm 2 . Line/Space=30/30 μ m 3 5 ） μm 3 4 H 2 S O 4 - H 2 O 2 ０ B u f f i n g 3 3 ３ t C Z - 8 1 0 0 e 3 2 g r a T 3 1 （ h t 3 0 d i W 2 9 n r e t 2 8 t a P 2 7 2 0 0 m j 1 4 0 m j ８ ０ m j L i g h t I n t e n s i t y MEC COMPANY LTD. MECetchBOND 19

Summary of MECetchBOND Summary of MECetchBOND • Adhesion between copper surface and resin has become more and more important. • MECetchBOND CZ can enhance mechanical bonding. • MECetchBOND system can give excellent adhesion and high reliability. • MECetchBOND system is what you need for various applications! MEC COMPANY LTD. MECetchBOND 20