Mairbek Chshiev
European School on Magnetism
Mairbek Chshiev European School on Magnetism Spintronics - - PowerPoint PPT Presentation
Mairbek Chshiev European School on Magnetism Spintronics Conventional spintronics Spin-orbit phenomena -> Spin orbitronics Dzyaloshinskii- Magneto Spin Hall Spin-orbit Rashba Interlayer Spin GMR Spin Transfer Moriya (DMI)
European School on Magnetism
«Theory of spintronic phenomena in magnetic tunnel junctions»
GMR & TMR Spin Transfer Torques (STT) Spin Hall Effect (SHE) Rashba Effect
Spin-orbit phenomena -> Spin orbitronics
Interlayer Exchange (IEC) Spin Filtering (SF) Magneto crystalline anisotropy
Conventional spintronics
Dzyaloshinskii- Moriya (DMI) Spin-orbit Torques (SOT)
Spin valves Alloys (BiCu, IrCu…) Single & double barrier MTJs AFM metals AFM insulators Frustrated magnets Rutiles Heusler alloys Graphene Garnets (Y3Fe5O12) Layered structures (Pt/Co/AlOx, Ta/CoFe/MgO Interfaces perovskites Domain walls
Ferrites (CoFe2O4)
«Theory of spintronic phenomena in magnetic tunnel junctions»
n
||
F
E
F
E
magnetization acts on current
Huge TMR in crystalline MTJ if:
Bloch state symmetry
spin states in FM electrodes (“half-metallic”-like)
dxy dxz, dyz px, py
dz
2
The 1st Brillouin zone with high symmetry k-points
TMR~600% Fe|MgO|Fe (Tohoku,2008)
Tunnel (TMR) magnetoresistance:
Bloch state symmetry based Spin Filtering (SF)
«Theory of spintronic phenomena in magnetic tunnel junctions»
TMR~600% Fe|MgO|Fe (Tohoku,2008)
Huge TMR in crystalline MTJ if:
Bloch state symmetry
spin states in FM electrodes (“half-metallic”-like)
The 1st Brillouin zone with high symmetry k-points
5 10 15 20 25
e
e
e
e
e
Fe Fe MgO
layer
Bloch state symmetry based Spin Filtering (SF)
IEEE Trans. Mag., 41 (2005) 2645
magnetization acts on current
Tunnel (TMR) magnetoresistance:
«Theory of spintronic phenomena in magnetic tunnel junctions»
ref free
Field (Oe)
Current (mA)
Spin Transfer Torque (STT):
current acts on magnetization
(Rhigh)
Freescale 4Mbit
(Rlow)
MRAM
Cu PtMn Cu
CoFe CoFe
MgO
(Pt/Co)
J
Functional devices
GMR, TMR, STT
P P AP
R R R TMR
Tunnel (TMR) magnetoresistance:
magnetization acts on current
«Theory of spintronic phenomena in magnetic tunnel junctions»
Giant
magnetoresistance (GMR) metallic nanostructures Keldysh formalism Tight
Kubo formalism Free electron model Ab
(DFT )
Tunnel
m agnetoresistance
(TMR )
amorphous and crystalline , single and double barrier tunnel junctions
Spin transfer
torque (STT), exchange coupling (IEC), anisotropy
Spin filtering
Spin Hall Effect (SHE) alloys
Materials for spintronics
amorphous and crystalline tunnel junctions crystalline magnetic tunnel junctions chalcogenides , rutiles , spinels , Heusler alloys, Graphene , frustrated magnets
Computational Materials Science Condensed Matter Theory
+ Boltzmann approach (drift
«Theory of spintronic phenomena in magnetic tunnel junctions»
R L R L parallel
R L R L el antiparall
) ( ) ( ) ( ) ( ) ( F R L F R L F R L F R L R L
R L R L P
Moodera et al, PRL 74, 3273 (1995)
Parallel configuration Antiparallel configuration
Miyazaki
«Theory of spintronic phenomena in magnetic tunnel junctions»
) ( ) ( ) ( ) ( ) ( F R L F R L F R L F R L R L
) ( ) ( ) ( ) ( ) (
R L R L R L R L R L
«Theory of spintronic phenomena in magnetic tunnel junctions»
0.5 1 1.5
0.5 1 1.5 2 2.5 3
Energy, Wave Function
Energy
0.5 1 1.5
0.5 1 1.5 2 2.5 3
Energy, Wave Function
Energy
y y
y ikR
y ik y ik
L L
Boundary conditions : continuity of |Y> and its derivative
«Theory of spintronic phenomena in magnetic tunnel junctions»
a R L a R R L L R L a R L a R L R L R L
2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 1 2
E
F
|| 2
||
k
«Theory of spintronic phenomena in magnetic tunnel junctions»
U
EF
E
E
Localized states don’t (d states) free electron tunneling
2 2 ' 2 2 2 ' 2 '
a
el Antiparall Parallel
2 2 2 2 2 2 2 2
a el antiparall Parallel
² 2
parallel el antiparall Parallel Parallel
F F F F F F F F
2 2
«Theory of spintronic phenomena in magnetic tunnel junctions»
F F
F F F F
2 2
In Julliere’s model, only the polarization within the magnetic electrodes influences the TMR. In Slonczewski’s model, the barrier height also plays a role.
² 2
Parallel el Antiparall
F F F F F F F F
2 2
2 || 2
Electrons with highest velocity give strongest contribution to tunneling
«Theory of spintronic phenomena in magnetic tunnel junctions»
R R R R R L L L L L R L R L R L R L R L R L R L R L AP AP P
a R L a
2 ' 2 2 ' 2 2 2 ' 2 '
2 2 ' 2 2
R R R L L L
Generalization: Write TMR in terms of the transmission probability
U
EF
E
E
«Theory of spintronic phenomena in magnetic tunnel junctions»
«Theory of spintronic phenomena in magnetic tunnel junctions»
L L 2 2 2 2 2 1 2 2 1 2 2
2 1
z z
z
«Theory of spintronic phenomena in magnetic tunnel junctions»
1
1 ik z
2
2 ik z
dz z dz z
) ( ) (
1
1 ik z
2 2 || 2 2 2
E
) ( 2
2 2 2
V E m k E
2 || 2 1 1
E
) ( 2
1 2 1
V E m k E ) ( V 2 ) (
2 2 || 2
z e m k z ) ( 2
2
E V m
|| || ||)
2 2 2 2 1 2 2 1 2 2 2 2 1 2 2 1 ||
a
voltage dependence appears
«Theory of spintronic phenomena in magnetic tunnel junctions»
|| || ||)
Note 1) increase of G with V since more states available for tunneling 2) For symmetric barriers G~V2 3) For asymmetric barrier only G~V+const*V2
«Theory of spintronic phenomena in magnetic tunnel junctions»
«Theory of spintronic phenomena in magnetic tunnel junctions»
«Theory of spintronic phenomena in magnetic tunnel junctions»
«Theory of spintronic phenomena in magnetic tunnel junctions»
Spin Transfer Torque (STT): current acts on magnetization
Prediction:
First observations:
||
free ref
P AP
||
B e s
precession damping
parallel field-like
Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation: Quantum
1 Τ
Interlayer Exchange Coupling (IEC)
Erickson (1993)
s spin valve tallic m for ~
T
MTJs for ) V ( T
«Theory of spintronic phenomena in magnetic tunnel junctions»
t Electron Flow
incoming transmitted
Local exchange interaction between conduction electron spins and local magnetization M
«Theory of spintronic phenomena in magnetic tunnel junctions»
M.D.Stiles and A.Zangwill, PRB 66 (2002) 014407
«Theory of spintronic phenomena in magnetic tunnel junctions»
Vector of Pauli matrices
«Theory of spintronic phenomena in magnetic tunnel junctions»
i i i i i
* * x
i i i i i
* * y
i i i i i
* * z
i i i i i
* * x
i i i i i
* * z
i i i i i
* * y
ij
xy
yy
zy
«Theory of spintronic phenomena in magnetic tunnel junctions»
Spin current tensor:
zy
xy
yy
Current flows in y direction
ik kQ
i=x, y, z in spin space k=x, y, z in real space
ik
Spin current and spin torque in non-collinear case Spin torque:
z y x (||)
Barrier FM’ M’ FM M
zy
yy
xy
parallel (Slonczewski)
) ( (||)
y x
perpendicular (field-like)
T T||
q
«Theory of spintronic phenomena in magnetic tunnel junctions»
2 d
sd
In non-colinear geometry, exchange of angular momentum takes place between the two populations of electrons but total angular moment is conserved.
Kinetic Potential Exchange sd Pauli matrices vector
Unit vector//M
d
d
s=local spin-density of s electrons
«Theory of spintronic phenomena in magnetic tunnel junctions»
Local spin density at r and t : Electron wave-function
*
Temporal variation of local spin density:
* *
Schrödinger equation :
Substitution (2) in (1) :
* *
sd
d
3x3 tensor Spin space x real space
* 2
r
«Theory of spintronic phenomena in magnetic tunnel junctions»
sd
d
The exchange interaction between spin-polarized s electrons and more localized d electrons is responsible for spin-transfer torque. This interaction yields a precessional motion of spin-density of s electrons around the local
divergence of spin-current.
sd SF
d
SF
can be fully calculated by solving Schrodinger equation in non-colinear geometry
«Theory of spintronic phenomena in magnetic tunnel junctions»
1 1
, k k
2 2
, k k
z y x (||)
1 1 1
1
ik y ik y ik y
2 2
2 ik y k y k y k y k y ik y
1 1 2
component of majority spin ˆ momentum with M as quantization axis component of minority spin ˆ momentum with M as quantization axis component of majority spin k z k z k z
2
ˆ momentum with M as quantization axis component of minority spin ˆ momentum with M as quantization axis k z
«Theory of spintronic phenomena in magnetic tunnel junctions»
1 1 1 1 1 1 1 1 1
1
ik y ik y ik y ik y ik y ik y ik y ik y ik y
1 1
, k k
2 2
, k k
z y x (||)
«Theory of spintronic phenomena in magnetic tunnel junctions»
z y x (||)
«Theory of spintronic phenomena in magnetic tunnel junctions»
where ), ( ) ( ) ( ) V ( ) ( ' ) ( sin ) ( ' ) ( cos ) )( ( e sin ) ( ) )( )( ( ) ( ) (
1 2 ) ( 2 2 2 2 2 ||
E T E T E T e E f E f y k k k k a q y k k k k a q Den k k q k k k k a q q E T
R L R R R R R R R R dy y q L L R R L L
a
z y x (||)
Barrier FM’ M’ FM M
zy
yy
xy
T T||
q
L
L
R
R
V e
U
EF
E
E 2 2
' ) ( sin ) ( ) )( ( ) ( ) )( ( ' ) ( cos ) ( ) ( ) )( )( ( ) ( ) V ( 2 e sin ) )( )( ( ) ( ) (
2 2 2 2 ) ( 2 2 2 2
y k k k k q k k a q k k a q k k q y k k k k a q k k q k k k k a q q e E f Den k k k k a q q E T
R R L L R R R R L L R R R R L L R R L L R dy y q R R L L
a
) V ( ) ( ' ) ( cos ) ( ' ) ( sin ) )( ( e sin ) ( ) )( )( ( ) ( ) (
2 ) ( 2 2 2 2 2 1
e E f E f y k k k k a q y k k k k a q Den k k q k k k k a q q E T
R L R R R R R R R R dy y q L L R R L L
a
a Free electron model
Explicit analytical expressions for STT
In the right FM layer (as an example):
«Theory of spintronic phenomena in magnetic tunnel junctions»
z y x (||)
Barrier FM’ M’ FM M
zy
yy
xy
T T||
q
L
L
R
R
V e
U
EF
E
E 2 2
a Free electron model
i i i i i
k k k k P
i i i i i i i
k k q k k q
2 2
i i i i i i i
k k q k k q
2
) (
«Theory of spintronic phenomena in magnetic tunnel junctions»
z y x (||)
Barrier FM’ M’ FM M
zy
yy
xy
T T||
q
L
L
R
R
V e
U
EF
E
E 2 2
a Free electron model
i i i i i
k k k k P
i i i i i i i
k k q k k q
2 2
i i i i i i i
k k q k k q
2
) (
«Theory of spintronic phenomena in magnetic tunnel junctions»
z y x (||)
Barrier FM’ M’ FM M
zy
yy
xy
T T||
q
L
L
R
R
V e
U
EF
E
E 2 2
a Free electron model
i i i i i
k k k k P
i i i i i i i
k k q k k q
2 2
i i i i i i i
k k q k k q
2
) (
«Theory of spintronic phenomena in magnetic tunnel junctions»
z y x (||)
Barrier FM’ M’ FM M
zy
yy
xy
T T||
q
L
L
R
R
V e
U
EF
E
E 2 2
a Free electron model
i i i i i
k k k k P
i i i i i i i
k k q k k q
2 2
i i i i i i i
k k q k k q
2
) (
Total torques: Case of thick barrier Parallel torque related to longitudinal spin current
i i i i i S i
2 2 i i i i
T
transmission probability
«Theory of spintronic phenomena in magnetic tunnel junctions»
z y x (||)
Barrier FM’ M’ FM M
zy
yy
xy
T T||
q
L
L
R
R
V e
U
EF
E
E 2 2
x x x x x x x x x x x x x x x x x
a ’ ’ ’ i j b
B
2 2
Tight-binding model
Model parameters:
B
) (
ta, t’b – couplings
«Theory of spintronic phenomena in magnetic tunnel junctions»
z y x (||)
Barrier FM’ M’ FM M
zy
yy
xy
T T||
q
B
2 2
Tight-binding model
Model parameters:
B
) (
ta, t’b – couplings
V , 1 1 ) ( . . 1 1 . . 1 1 ) V ( cos sin sin cos 2 1 1 2
B B B ' ' ' ' ' ' ' ) (
) ( ) ( ) ( ) (
e N i c c t c c H c h c c t H c h c c t H c c t c c e H H H H H H c c t c c H H H H H H H
B i i NN j i i i i B b b RB a a LB NN R R L NN L RB LB B R L
R L R L R L R L
Hamiltonian
x x x x x x x x x x x x x x x x x
a ’ ’ ’ i j b
«Theory of spintronic phenomena in magnetic tunnel junctions»
z y x (||)
Barrier FM’ M’ FM M
zy
yy
xy
T T||
q
x x x x x x x x x x x x x x x x x
a ’ ’ ’ i j b
B
2 2
Tight-binding model
Model parameters:
B
) (
ta, t’b – couplings Charge current: Keldysh formalism with non-equilibrium Green functions Total torque:
1 ' , ' ' , 1 ' '
2 x 2 matrices
1 ' , ' ' , 1 ' || 3
1 ' , ' ' , 1 ' || 3 ' , 1 '
Spin current:
' † ' ' '
Non-collinear M and M’
G G G G G
' , 1 , 1 1 ' , ' ' , 1 ' ' '
' ' '
G
«Theory of spintronic phenomena in magnetic tunnel junctions»
1. Using divergence of spin current Q: 2. Using magnetic moment and exchange splitting:
xy
yy
zy
Current flows in y direction
B
sd
d
«Theory of spintronic phenomena in magnetic tunnel junctions»
B
Let’s check relation between T and using its’ angular dependence. Suppose they are related via unknown vector a. Then: ) , , (
z
|| ||
z z z
|| ||
The two methods give quantitative agreement and are connected directly via exchange splitting
B
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0.0 0.2 0.4
0.0 0.2 0.4
Torque (eV)
rad
T|| T ||
V=0.1 V, N=5, i=1 (at FM/I interface)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 2.0x10
4.0x10
Tx/y= -Ty/x
(
)/2=-0.1
(
)/2=-0.2
(
)/2=-0.3
«Theory of spintronic phenomena in magnetic tunnel junctions»
sd
d
The exchange interaction between spin-polarized s electrons and more localized d electrons is responsible for spin-transfer torque. This interaction yields a precessional motion of spin-density of s electrons around the local
divergence of spin-current.
sd SF
d
SF
«Theory of spintronic phenomena in magnetic tunnel junctions»
In the right FM layer site ’
Coupling amplitude decreases with exchange splitting
6 12 18 24 30
0.0 2.0x10
4.0x10
6.0x10
8.0x10
1.0x10
V=0,
'
T, T,
x x x x x x x x x x x x x x x x x
a ’ ’ ’ i j b
Period of oscillations is
k
Perpendicular torque component T is not zero @ zero bias describing exchange coupling between FM layers
ibid.71, 6995 (2005);
Note RKKY period (summation of k)
«Theory of spintronic phenomena in magnetic tunnel junctions» 5 10 15 20 25 30
0.0
, V=0.5V,
Torque (eV)
'
5 10 15 20 25 30
0.0 1.0x10
, V=0.5V,
Torque (eV)
'
Local torques in the right FM at positive/negative bias Period of oscillations is
k
x x x x x x x x x x x x x x x x x
a ’ ’ ’ i j b
Note voltage (current) induced STT period (difference of k)
«Theory of spintronic phenomena in magnetic tunnel junctions»
Qtrans
M1
q
T||
«Theory of spintronic phenomena in magnetic tunnel junctions»
Only torque in x-direction M1
q
M2
NM In phase Dephased M2 M2 Qtrans Qrefl Qin
T||
«Theory of spintronic phenomena in magnetic tunnel junctions»
1
0.0
t
Q(a.u.)
Energy (eV) Q
L , 0V
Q
R , 0V
Q
L , +0.1V
Q
R , +0.1V
Q
L , -0.1V
Q
R , -0.1V
t
EF
0.0 2.0x10
Energy (eV)
Q(a.u.)
Q
L ||, 0V
Q
L ||, +0.1V
Q
L ||, -0.1V
Q
R || , 0V
Q
R || , +0.1V
Q
R || , -0.1V
EF
1 ' 1 ' 1 ' ' '
x x x x x x x x x x x x x x x x x
a ’ ’ ’ i j b
Q|| Q
V e
B
F
z y x (||)
|| ||
R L
R L f
V ) ( V ) (
>
L R R L
V V
>
R L
«Theory of spintronic phenomena in magnetic tunnel junctions»
1 ' 1 ' 1 ' ' '
0.0 2.0x10
Energy (eV)
Q(a.u.)
Q
L ||, 0V
Q
L ||, +0.1V
Q
L ||, -0.1V
Q
R || , 0V
Q
R || , +0.1V
Q
R || , -0.1V
EF
x x x x x x x x x x x x x x x x x
a ’ ’ ’ i j b
R L
V e
B
F
z y x (||)
1
0.0
t
Q(a.u.)
Energy (eV) Q
L , 0V
Q
R , 0V
Q
L , +0.1V
Q
R , +0.1V
Q
L , -0.1V
Q
R , -0.1V
t
EF
Q|| Q
|| ||
R L
R L f
V ) ( V ) (
>
L R R L
V V
>
«Theory of spintronic phenomena in magnetic tunnel junctions»
1 ' 1 ' 1 ' ' '
x x x x x x x x x x x x x x x x x
a ’ ’ ’ i j b
V e
B
F
z y x (||)
is an even parity function
is zero at zero voltage and is non monotonic function of applied voltage
R L
0.0 2.0x10
Energy (eV)
Q(a.u.)
Q
L ||, 0V
Q
L ||, +0.1V
Q
L ||, -0.1V
Q
R || , 0V
Q
R || , +0.1V
Q
R || , -0.1V
EF
1
0.0
t
Q(a.u.)
Energy (eV) Q
L , 0V
Q
R , 0V
Q
L , +0.1V
Q
R , +0.1V
Q
L , -0.1V
Q
R , -0.1V
t
EF
Q|| Q
«Theory of spintronic phenomena in magnetic tunnel junctions»
theory PRL 97, 237205 (2006) IEEE Trans. Mag. 44, 2543 (2008)
Nature Physics 4, 37 (2008)
(field-like)
i i
2 2
«Theory of spintronic phenomena in magnetic tunnel junctions»
Nature Physics 4, 37 (2008)
~V2
(field-like)
i i
2 2
theory PRL 97, 237205 (2006) IEEE Trans. Mag. 44, 2543 (2008)
«Theory of spintronic phenomena in magnetic tunnel junctions»
Nature Physics 4, 37 (2008)
theory
PRL 97, 237205 (2006) IEEE Trans. Mag. 44, 2543 (2008)
~V2
(field-like)
i i
2 2
«Theory of spintronic phenomena in magnetic tunnel junctions»
Nature Physics 4, 37 (2008)
theory
PRL 97, 237205 (2006) IEEE Trans. Mag. 44, 2543 (2008)
~V2
(field-like)
i i
2 2
«Theory of spintronic phenomena in magnetic tunnel junctions»
(fA) ) (
) (
s z
I
(AP) (P)
(fA) ) (
) (
s z
I
(AP) (P)
z
z
||
z z z
2 1 2 1 3 2 2 1
Parallel magnetizations:
2
Antiparallel magnetizations:
2 ||
z
«Theory of spintronic phenomena in magnetic tunnel junctions»
V e
B
L
L
F
) ( ) ( ) ( ) ( ) ( ) (
R L R L R L R L R L R L
) ( ) ( ) ( ) ( ) ( ) ( R L R L R L R L R L R L
i i i 2 2 V
Symmetric MTJ: T is an even parity function of applied voltage:
(I. Theodonis et al, PRL 97, 237205 (2006); M. Chshiev et al, IEEE Trans. Mag. 44, 2543 (2008))
Asymmetric MTJ (deviations from V2): T with odd parity terms appeared :
(C1 in A. Manchon et al, JPCM 20, 145208 (2008); M. Wilczyński et al., PRB 77, 054434) ; Xiao et al., PRB 77, 224419 (2008); S.-C. Oh et al, Nature Physics 5, 898 (2009) i i iV
0.0
R eV
L
R eV
L eV
L eV
L eV
«Theory of spintronic phenomena in magnetic tunnel junctions»
P->AP (AP->P)
Spin transfer MRAM: (STT-MRAM) Uncontroled phenomenon during «bit» writing in STT-MRAMs: “back-switching” ON
jSTT Vdd écriture “1”
jSTT
free pinned
Vdd écriture “0”
back switching is a problem for MRAM
experiment
«Theory of spintronic phenomena in magnetic tunnel junctions»
||
B e s
precession damping
Slonczewski
field-like STT: Current acts on Magnetization
||
ref free
P->AP (AP->P)
T>0 T||>0 T>0 T||<0 back switching is a problem for MRAM
For symmetric MTJ theory predicted:
For V>0: T(V) =- T||(V)
experiment
// 2
«Theory of spintronic phenomena in magnetic tunnel junctions»
STT: Current acts on Magnetization
||
ref free
P->AP (AP->P)
T>0 T||>0 T>0 T||<0 back switching is a problem for MRAM
i i iV
For asymmetric MTJ theory predicts linear term experiment
V e
B
F
ref ≠ free
S.-C. Oh, S.-Y. Park, A. Manchon, M. Chshiev et al, Nature Physics 5, 898 (2009)
For asymmetric MTJs (ref < free) backswitching voltage can be shifted up (blue curves) away from writing voltage
(which is also observed in experiment)
«Theory of spintronic phenomena in magnetic tunnel junctions»
STT: MTJ with asymmetric barrier
V e
B
'
||
ref free
0.0 0.5 1.0 10 20 30
0.0 0.5 1.0
T|| (peV/ ) Voltage (V)
clean left center right
(a) (b) T (peV / ) Voltage (V)
0.0 0.5 1.0
0.0 0.1 0.2 0.3
0.0 0.5 1.0
0.0 0.1 0.2
0.0 0.5 1.0
20 40 60
T|| / I (h / 2e) Voltage (V)
clean left center right
(a) (b)
(T - T
) / I (h / 2e)
Voltage (V)
(c)
TMR (%) Voltage (V)
STT and TMR voltage dependence tuning by Interface engineering
T||(V) and T(V) vs additional layer position in the barrier STT efficiency and TMR vs additional layer position in the barrier
t 6 '
B
(resonant regime)
t 6 '
B
>
(tunneling regime)
«Theory of spintronic phenomena in magnetic tunnel junctions»
«Theory of spintronic phenomena in magnetic tunnel junctions»
«Theory of spintronic phenomena in magnetic tunnel junctions»
«Theory of spintronic phenomena in magnetic tunnel junctions»
«Theory of spintronic phenomena in magnetic tunnel junctions»
«Theory of spintronic phenomena in magnetic tunnel junctions»
Spin filtering in crystalline MTJs (Fe|MgO|Fe)
Huge TMR in crystalline MTJ if:
Bloch state symmetry
spin states in FM electrodes (“half-metallic”-like)
Spin Transfer Torque (STT)
Models seems to be ok
||
ref free
MgO
«Theory of spintronic phenomena in magnetic tunnel junctions»
MgO FM
F
F
What about effect of Cr on STT?
«Theory of spintronic phenomena in magnetic tunnel junctions»
) ( ) ( ) ( ) ( d s d s d s d s
Current matrix:
x z y
Barrier FM’ FM M
) ( ) ( ) (
d s d s d s
q
B
d s
) (
) ( ) ( d s
NM
NM d s
) ( ) ( ) ( d s
'
z z
' ' ' '
z z spin
Charge current: Spin current: Spin torque:
spin
b d s NM d s d s
) ( ) ( ) ( ) (
Effective mass:
Refs for parameters
a
5 1
«Theory of spintronic phenomena in magnetic tunnel junctions»
20 40 60 Torque, oE Z, nm a=0 a=4
0.0 5.0x10
4
1.0x10
5
Torque, oE Z, nm a=0 a=4
(Cr acts as barrier for s-electrons, i.e. 1)
almost insensitive in value to Cr insertion
s-electrons d-electrons Torque distribution in the left Fe layer
«Theory of spintronic phenomena in magnetic tunnel junctions»
Spin filtering in crystalline MTJs (Fe|MgO|Fe)
Huge TMR in crystalline MTJ if:
Bloch state symmetry
spin states in FM electrodes (“half-metallic”-like)
Spin Transfer Torque (STT)
Models seems to be ok Interlayer Exchange Coupling (IEC)
||
ref free
PRL 89, 107206 (2002)
Tight-binding results with a choice of parameters used successfully for STT behaviour
MgO
«Theory of spintronic phenomena in magnetic tunnel junctions»
z y x (||)
Barrier FM’ FM
x x x x x x x x x x x x x x x x x
Total energy differences for P and AP
5 10 15 20 25 30
0,0 4,0x10
8,0x10
0=+3.4
0=+3.6
Left layer thickness (ML) IEC (a.u.)
dR=5
5 10 15 20 25 30
dR=5 Left layer thickness (ML) IEC (a.u.)
0=+3.8
5 10 15 20 25 30
dR=5 IEC (a.u.) Left layer thickness (ML)
0=+4
dL dR q
Equilibrium IEC on FM layers thickness
1
2
B
2 2
Period of oscillations T
T~5 ML T~7 ML T~5 ML T~7 ML
P.Bruno, PRB 52, 411 (1995) L.E.Nistor et al, PRB 81, 220407 (2010)
«Theory of spintronic phenomena in magnetic tunnel junctions»
5 10 15 20 25 30
dR=5 FM layer thickness (ML) IEC (a.u.)
0=+3.8
L.E.Nistor et al,
Λ~5 ML
en accord avec P.Bruno, PRB 52, 411 (1995)
«Theory of spintronic phenomena in magnetic tunnel junctions»
ON
jSTT Vdd écriture “1”
j
T
||
T
ref free
Acknowledgments: