LGAD Prospects: Granularity and Repetition Rate UCSC Launchpad - - PowerPoint PPT Presentation

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LGAD Prospects: Granularity and Repetition Rate UCSC Launchpad - - PowerPoint PPT Presentation

CPAD Instrumentation Frontier Workshop Madison, Wisconsin December 8-10, 2019 LGAD Prospects: Granularity and Repetition Rate UCSC Launchpad Bruce A. Schumm Initiative Santa Cruz Institute for Particle Physics University of California,


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LGAD Prospects: Granularity and Repetition Rate

CPAD Instrumentation Frontier Workshop Madison, Wisconsin December 8-10, 2019 Bruce A. Schumm

Santa Cruz Institute for Particle Physics University of California, Santa Cruz

UCSC Launchpad Initiative

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Out utli line of

  • f Talk

alk

LGAD Granularity

▪ Current limitations and goals ▪ AC (AC-coupled) LGAD ▪ TI (Trench-Isolated) LGAD ▪ iLGAD (inverted junction structure) ▪ DJ (Deep-Junction) LGAD

Diode Detectors in High Frame-Rate Applications

▪ Motivated by need for advanced accelerator diagnostics

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Initial Application: CMS/ATLAS Timing Layers

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ATLAS HGTD

  • Two layers (front

and back of frame)

  • n each side of IP
  • Covers forward

region 2.4<||<4.0

  • Pixel dimension of

1.3x1.3mm2

Complementary instrument under design by CMS, with a more central coverage

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Gran anularit ity an and the the JT JTE

JTE = Junction Termination Extension Needed to avoid large fields and breakdown between segmented implants

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Con

  • nventio

ional l LGAD Coverage Gap aps

Diagram credit: FBK, Trento, Italy

  • Smallest achievable gap (50%

criterion) is ~30µm

  • Limits granularity to ~mm scale
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LGAD Granula larity ty Wis ish List

4D tracking: relevant scale is ~50 µm in r (e.g. ATLAS pixel layers)

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X-Ray Imaging: again relevant scale is ~50 µm e.g. Z. Wang, On the Single-Photon-Counting (SPC)

modes of imaging using an XFEL source, JINST 10, C12013 (2015).

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Towards High igher LGAD Gran anula larity ty ▪ AC (AC-coupled) LGAD ▪ TI (Trench-Isolated) LGAD ▪ iLGAD (inverted junction structure) ▪ DJ (Deep-Junction) LGAD

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Approach 1: : AC LGAD

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Th The AC-couple led LGAD (A (AC-LGAD)

US patent No.: 9,613,993 B2, granted Apr. 4, 2017: “Segmented AC- coupled readout from continuous collection electrodes in semiconductor sensors” Hartmut Sadrozinski, Abraham Seiden (UC Santa Cruz), Nicolo Cartiglia (INFN Torino).

Since signal is AC-coupled, must integrate to 0

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AC LGAD: Res esponse En Envelo lope

  • Pulsed laser measurements at SCIPP
  • Coordinates represent position of laser spot
  • Read-out channel is the illuminated channel
  • S. Mazza, SCIPP
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AC LGAD: Pos

  • sit

itio ion Reso esolu lutio ion

Illuminate with precision pulsed laser Intensity adjusted to ~1 MiP For small-pixel prototype, can approach 5 µm ➔ Promising for 4D tracking!

100 µm pad 200 µm pixel 200 µm pad 400 µm pixel

  • N. Cartiglia, INFN Torino
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AC LGAD: Timing and “Workplan”

  • N++ layer resistivity
  • N++ termination
  • Signal coupling (dielectric width; pad fill-factor)
  • Gain layer properties
  • N. Cartiglia, INFN Torino

Temporal resolution already approaching that of conventional LGADs (45ps vs 20ps) Parameter space currently under exploration

  • Timing resolution and signal-to-

noise

  • Point-spread function and cross talk
  • Fabrication technique

AC LGAD R&D Threads

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Approach 2: : TI I LGAD

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Tren ench-Isolated (“TI”) LGAD

TI-LGAD slide credits: FBK, Trento, Italy

  • Straightforward idea: Avoid breakdown by

interposing a physical barrier (trench) between semiconductor junction segments (implants)

  • Trench of depth 1µm or less
  • Filled with insulator (SiO)
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Low-Gain in Reg egio ion Char haracteriz izatio ion for

  • r TI

TI-LGAD

TI-LGAD slide credits: FBK, Trento, Italy

  • Low-gain region reduced from ~30 µm to 5-10 µm (50% criterion)
  • Timing resolution, irradiation properties still to be assessed
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Approach 3: : iL iLGAD

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In Inverted Archit itecture (iL iLGAD)

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Junction/Gain layer at back of device ➔ Low fields at upper surface, so conventional segmentation ➔ Inverted architecture (“iLGAD”)

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Prot

  • totype iL

iLGAD Cha haracteriz izatio ion

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arXiv:1904.02061

PiN and iLGAD Timing Comparison

  • Large signal (“saturated”) regime
  • Fast rise region shows PiN-like turn-on

(effective charge collection)

  • MIP timing resolution under study

Low/No gain region absent

e- h+

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Approach 4: : DJ LGAD

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DJ DJ-LGAD: A App pproach to

  • LGAD Gran

anula larity ty

Basic inspiration is that of the capacitive field: Locally large, but surrounded by low- field region beyond the plates. Idea:

  • Use symmetric P-N junction to act as an

effective capacitor

  • Localized high field in junction region

creates impact ionization

  • Bury the P-N junction so that fields are

low at the surface, allowing conventional granularization ➔ “Deep Junction” LGAD (DJ-LGAD)

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DJ DJ-LGAD Base aselin ine Desi esign

Patent Application SC 2019-978

  • C. Gee, S. Mazza, B. Schumm, Y. Zhao

UC Santa Cruz

Implementation of concept requires significant tuning of design parameters

DJ-LGAD Baseline Design

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DJ J LGAD Sim imula lated Per erformance

20 um pitch

Field Configuration

  • Junction creates gain region
  • Low field at surface and in bulk
  • Drift velocity saturated everywhere

Gain Uniformity

  • 20 µm pixels simulated
  •  4% across full device
  • DC coupled to readout pads

Collected signal versus MIP incident position Electric field map

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DJ DJ-LGAD Per erformance and and Prot

  • totyping

SBIR-STTR Grant Submitted Cactus Materials, Inc.

Title: A New Approach to Achieving High Granularity in Low-Gain Avalanche Detectors PI: Rafiqul Islam, PhD. Rafiqul.islam@cactusmaterials.com Topic Number/Subtopic Letter: 34b

First prototype (if funded) will be rudimentary planar prototype to confirm the Deep Junction principle

Temporal profile Gain profile

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LGADs and Hig igh Frame-Rate Appli lications

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LGADs and and Ultr ltra-Hig igh Fr Fram ame Ra Rate

Next-generation photon sources will likely strive towards multi-GHz frame rate

  • C. Barnes, The Dynamic Mesoscale Materials Capability, P/T Colloquium, Los Alamos National Laboratory, Feb 14, 2019,

https://204.121.60.11/science-innovation/sciencefacilities/dmmsc/_assets/docs/PTColloq%2020190214_public.pdf

Q: Do LGADs provide any advantage at high frame rate? Note that impact ionization is a secondary process, so takes time to develop Consider signal development in the “saturated” regime (essentially uniform e/h plasma deposited instantaneously in the detector bulk)

  • B. Schumm, Signal Development for Saturated Ultrafast Sensors with Impact Ionization Gain, arXiv:1908.04953, August

2019; submitted to JINST

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Consider flux  of X-rays of energy E (eV) incident on a sensor of thickness d with attenuation length  and e/h drift speed vs

e/h. At leading order the signal charge collected after time t

contains two terms: A linear direct term and a quadratic term from impact ionization (gain): If amplified with a circuit with collection time , the total collected charge will be approximately where K  1 relates the circuit shaping time to the effective charge collection time. If the circled term is greater than 1 then the gain provides a benefit.

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Sig ignal l Develo lopment in in Satu turated Reg egim ime

Impact ionization factor = number pf e/h pairs created per cm of travel

  • f extant carrier

arXiv:1908.04953 Gain contribution

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Satu turated Sen ensors: : Elem Elemental l Sim imulatio ion

arXiv:1908.04953 Develop elemental simulation with

  • Planar 50µm thick sensor
  • saturated drift speed

ve/h=100/60 µm/nsec

  • 2µm thick gain layer
  • =0.61µm mean free path per

impact ionization in gain layer

  • leads to a gain of 30.

➔ LGADs provide benefit to ~10 GHz frame rate (maximum under consideration in next generation photon sources)

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Sum ummary ry

Granularity

Conventional LGAD limited to ~1mm2 granularity by junction termination requirements ➔A number of approaches under development to reach 50 µm (or better) scale ➔AC-LGAD most advanced idea but still much R&D to do ➔DJ-LGAD new (first public presentation) has potential to provide high granularity in DC-coupled mode with no gain-free regions

Frame Rate

Study of fundamental properties of impact ionization and solid-state charge collection suggests that LGADs advantageous to frame rates of 10 GHz or more

  • Accelerator diagnostics (R&D funded by 3 year University of California “Lab Fees”

grant to begin in Spring, with LANL, LBNL, UC Davis, UC Santa Barbara, UC Santa Cruz)

  • X-ray imaging
  • … ?
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Our Benefactors

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UCSC Launchpad Initiative

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BACKUP

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Jacoboni, C., C. Canali, G. Ottaviani, and A. A. Quaranta, Solid State Electron. 20, 2(1977) 77-89.

Basi asic Prop

  • pertie

ies: : Elec Electron Drift rift Vel elocit ity

Caveat: There are depedencies

  • n doping level
  • For fields approaching 104

V/cm, velocity saturates at ~107 cm/s

  • Transit time for 100 µm of

silicon is ~1 nsec

  • Transit time and temporal

resolution are NOT one and the same, but it sets a scale

  • Thinner sensors generally

associated with more precise timing

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Jacoboni, C., C. Canali, G. Ottaviani, and A. A. Quaranta, Solid State Electron. 20, 2(1977) 77-89.

Basi asic Prop

  • pertie

ies: : Hole

  • le Dri

rift t Vel elocit ity

  • Saturated speed a bit less than

for electrons

  • Saturation occurs at higher

fields

  • Note that 104 V/cm over 100

µm is 100 V

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Electron drift velocity

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Jacoboni, C., C. Canali, G. Ottaviani, and A. A. Quaranta, Solid State Electron. 20, 2(1977) 77- 89.