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Introduces tw o new High Q products GHQ Series = High Q GUQ Series = Ultra High Q 1 Calchip Electronics, INC. w w w .calchipelectronics.com 59 Steamwhistle Drive, Ivyland, PA. 18974 Phone: (215) 942-8900 Fax (215) 942-6800 CALCHIP


  1. Introduces tw o new High Q products GHQ Series = High Q GUQ Series = Ultra High Q 1 Calchip Electronics, INC. w w w .calchipelectronics.com 59 Steamwhistle Drive, Ivyland, PA. 18974 Phone: (215) 942-8900 Fax (215) 942-6800

  2. CALCHIP ELECTRONICS, INC. 100W Commercial radio Commercial radio G enral P urpose GUQ Series (0603~1210) G H Q Series (0603, 0805) Power Cellular base station, Cellular base station, 10W (0603, 0805 ) Power amplifier Power amplifier General Mobile phone, Mobile phone, G H Q Series GUQ Series 1W purpose Modules Modules (0201, 0402) ( 0402 ) (0201, 0402) (PA, VCO, BT, WLAN) (PA, VCO, BT, WLAN) 10M 100M 1G 10G High Q Frequency (Hz) 2

  3. Calchip Ultra-high Q/Low ESR (GUQ-MLCC) Features: Features: • Made by BME technology with Cu inner electrodes. • Excellent Q level at high frequency applications. • Having high SRF characteristic. • Offer ultra low capacitance to 0.1pF. • Offer high precision capacitance tolerance to ± 0.05pF HOW TO ORDER � � � � � � � � � GUQ 0 CG 101 J 250 N T � � � � SERIES SIZE PACKAGING CAPACITANCE TERMINATION DIELECTRIC TOLERANCE VOLTAGE CG = NP0 A=±0.05pF GUQ=Ultra � � T=7” reeled T = 7" reel Two significant N=Cu/Ni/Sn Two significant 02=0201 (C0G) B=±0.1pF High Q & � digits followed TD = 13 reel digits followed by 04=0402 C=±0.25pF Low ESR b no. of zeros. � � no. of zeros. And 10=0603 D=±0.5pF An R is in place R is in place of 21=0805 F=±1% of decimal point. decimal point. G=±2% eg.: 25=25 VDC J=±5% 0R5=0.5pF 50=50 VDC 1R0=1.0pF 100=100 VDC 100=10pF 250=250 VDC � 3

  4. Core-technology of GUQ-MLCC b. b. Pure Cu inner Pure Cu inner-electrode electrode d. d. High performance High performance inner pattern design inner pattern design e. BME/Cu thermal e. BME/Cu thermal treatment process treatment process a. a. Cu Cu- -cofirable microwave cofirable microwave dielectric dielectric c. c. Pure Cu termination Pure Cu termination 4

  5. Creativeness of CCE GUQ-MLCC  Copper co-firable dielectric recipe: Copper electrode co-firable Ba-Ti-O microwave material & its additives recipe  Advanced Inner Advanced Inner-electrode pattern design: electrode pattern design: Floating inner-electrode placement of MLCC Modified T-type inner-electrode placement of MLCC Precise capacitance control by electrode design of MLCC Advanced Floating inner-electrode placement of MLCC  Novel BME Novel BME- -Cu process Cu process Novel BME process of MLCC Manufacture with copper electrode 5

  6. Creativeness of GUQ (Design & Material)  Product comparison (Calchip GUQ-type vs. Murata GJM-type) Inner-electrode Product Inner-electrode Design Ceramic composition composition 1. L-shape electrode 2. Stress balance design 3. Low-ESR design (for low cap) Ba-Ti-O system with C �� - ��� sintering aids* Copper metal (H 2 -free protection sintering) 1. Cap-modified variable design Ca-Zr-O system with Murata-GJM Copper metal Mn doped (H 2 reduction sintering) 6

  7. Creativeness of GUQ (Process)  Process flow of Calchip GUQ-MLCC Slurry making Slurry making Foil casting Foil casting Inner Inner- -electrode electrode Stacking Stacking Pressing Pressing printing printing Termination dipping Termination dipping Tumbling Tumbling Sintering Sintering Binder burn Binder burn- -off off Cutting Cutting Calchip CU-cofiring process!! Plating Plating Test Test Package Package 7

  8. Product Rang ������������� EIA size 0201 0402 0603 0805 GJM03 ������������������ JM15 ���������� GQM18 ����������������������� GQM21 ���������������������� Product TC COG/COH COG/COH COG COG COG COG COG COG Rated 6.3V 25V 10V 25V 50V 50V 100V 50V 100V 250V 50V 100V 250V 50V 100V 250V 50V 100V 250V Volt. Cap (pF) 0R1 1R0 10 20 40 100 22~ 0R1~ 22~ 0R1~ 0R1~ 0R1~ 0R1~ 7R0~ 0R2~ 0R2~ 0R2~ 20~ 0R2~ 0R2~ Remark 0R2~47 pF 0R2~100 pF 47 pF 100 pF 100 pF 18 pF 100 pF 33 pF 20 pF 33 pF 20 pF 20 pF 20 pF 10 pF 100 pF 6R8 pF 8

  9. Q comparison ( ����� vs. GJM03,  3GHz 3GHz) (a) 2pF & 4.7pF, 0.5~3GHz (a) 2pF & 4.7pF, 0.5~3GHz (b) Different capacitance at 1GHz (b) Different capacitance at 1GHz 1400 700 Murara-GJM03-2pF Murata GJM03 1200 600 Murata-GJM03-4.7pF � C ������������ ���������� - � 2pF 1000 500 ���������� - � 4.7pF Q factor Q factor 800 400 600 300 400 200 better 200 100 0 0 500 1000 1500 2000 2500 3000 3500 0 2 4 6 8 10 12 14 16 18 20 Frequency (MHz) Capacitiance (pF) • Q factor of ���������� � • Q factor of WTC-RF03Ns are similar or better levels than Murata- s are similar or better levels than Murata- GJM03 products measured by LCR meter. GJM03 products measured by LCR meter. 9

  10. ESR comparison ( ����� vs. GJM03,  3GHz 3GHz) ) (a) 2pF & 4.7pF, 0.5~3GHz 2pF & 4.7pF, 0.5~3GHz (a) (b) Different capacitance at 1GHz (b) Different capacitance at 1GHz 0.35 10 Murara-GJM03-2pF Murata GJM03 0.3 Murata-GJM03-4.7pF ��������� ���������� - � 2pF 0.25 ���������� - � 4.7pF 1 ESR(Ohm) ESR (Ohm) 0.2 0.15 0.1 0.1 better 0.05 0 0.01 500 1000 1500 2000 2500 3000 3500 0.1 1 10 100 Frequency (MHz) Capacitiance (pF) • ESR of ���������� � • ESR of WTC-RF03Ns are similar or better levels than Murata- s are similar or better levels than Murata- GJM03 products measured by LCR meter. GJM03 products measured by LCR meter. 10

  11. SRF comparison ( ����� vs. GJM03,  8.5GHz 8.5GHz) 0201 size SRF (MHz) NO Cap (pF) � �������� urata 1 0.1 NA NA Murata-GJM03-2pF 2 0.2 NA NA 3 0.4 NA NA ��������� -2pF 4 0.5 NA NA 5 0.8 NA NA 6 1 8150 7650 7 1.2 7400 6680 8 1.5 7280 6007 9 1.8 6630 5592 10 2 5990 5365 11 2.7 5350 4449 12 3.3 4550 4054 13 3.9 4210 3791 Murata-GJM03-4.7pF 14 4 4070 3735 15 4.7 3690 3461 ��������� -4.7pF 16 5.6 3210 1318 17 6.8 3040 2943 18 8.2 2610 2577 19 9 2570 2484 20 10 2480 2329 • The SRF level of ���������� • The SRF level of WTC-RF03N & Murata-GJM03 are & Murata-GJM03 are 21 12 2030 2188 also close, but ������ also close, but RF03N still slightly high. still slightly high. 22 18 1830 1784 11

  12. Comparison of ������ /250V with competitors HQ 0603, NP0, 250V (@ 1GHz) 1000 100 Q CCE GUQ series Murata GQM series Johanson ATC 10 0.1 1 10 100 Capacitance (pF) • C �� ’s high voltage “ ��� • WTC’s high voltage “RF” series MLCC has similar Q performances ” series MLCC has similar Q performances to competitive products in high frequency performance. to competitive products in high frequency performance. 12

  13. Comparison of ������ /250V with competitors HQ 0603, NP0, 250V (@ 1GHz) 10 CCE GUQ series Murata GQM series Johanson ATC ESR (ohm) 1 0.1 0.1 1 10 100 Capacitance (pF) • C �� ’s high voltage “ ��� • WTC’s high voltage “RF” series MLCC has similar ESR performances ” series MLCC has similar ESR performances to competitive products in high frequency performance. to competitive products in high frequency performance. 13

  14. Summary Summary Product range & performance: Product range & performance: • � C � can provide same product range to replace muRata GJM/GQM series. • � C ����� series perform similar HF property with muRata GJM series. Key technology: Key technology: • COG dielectric ceramic (cofirable with Cu) • Pure Cu Termination & Innerelectrode • N 2 protection binder burn-out & sintering � - � Cu cofiring process 14

  15. Capacitance Measurement with Different Directions Capacitance Measurement with Different Directions Balance design have 0402 0201 Size been adopted Vertical to Parallel to Vertical to Inner- Parallel to Inner-electrode Inner-electrode electrode Inner-electrode C (pF) C (pF) 0.5 0.50 0.50 0.5 0.50 0.50 1 1.02 1.01 1 1.00 1.00 5 4.99 5.00 1.5 1.50 1.49 10 10.01 10.00 2 2.01 2.01 15 14.99 14.98 2.2 2.15 2.16 20 20.05 20.05 3 2.99 2.99 △ C=0.1pF max 1  fs △ C=0.1pF max △ f s=0.01GHz max &  2 LsC f s: self-resonant frequency  Conclusion : No significant capacitance discrepancies between different 15 measuring directions of ���� -MLCC.

  16. CCE NPO-MLCC specifications in mid-high frequency Product ������������������������� series �������������������������� H � series General purpose Dimension 0201~ 0805 0201~ 0805 0201~1812 Rated voltage 25~250V 25~100V 25~630V BaTiO compound / BaTiO compound / Dielectric BaTiO compound BaNdTiO compound/ SrCaZrTiO compound SrCaZrTiO compound Inner electrode Cu Pd-Ag / Ni Ni / Pd-Ag Termination Cu-Ni-Sn Ag-Ni-Sn / Cu-Ni-Sn Cu-Ni-Sn / Ag-Ni-Sn Application 500MHz~10GHz 100MHz~1GHz 1MHz~100MHz frequency Capacitance 0.1~100pF 0.1~1000pF 0.1~10000pF range 16

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