[PPT] - Integrated thick-film hybrid microelectronics applied on different PowerPoint Presentation

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page : 1 EMPS - IMAPS – BRUGGE - 2005 June 14, 2005

Integrated thick-film hybrid microelectronics applied on different material substrates

C. Jacq, T. Maeder, S. Menot-Vionnet, I. Saglini, H. Birol,

and P. Ryser EPFL - LPM Lausanne, Switzerland lpmwww.epfl.ch

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page : 2 EMPS - IMAPS – BRUGGE - 2005 June 14, 2005

Objective High temperature thick-film system low temperature thick-film system

Substrate Dielectric Resistor

Conductor Conductor

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Issues with low-temperature thick-films

Compatibility of thermal expansion Dielectric-resistor compatibility Adhesion Stability of the resulting circuits

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3 Temperature Ranges

75% PbO + 10% B2O3 + 15% SiO2 + 2% Al2O3

System Firing Temperature

575…650°C 500…550°C 850°C Aluminium Alloys & AlSi composites Commercial dielectrics & Du 2041 resistor

85% PbO + 10% B2O3 + 5% SiO2 + 2% Al2O3

Dielectrics Based on V6 glass Dielectrics & Resistor Based on V8 glass austenitic & ferritic steels Alumina & Austenitic & ferritic steels & ESL 3114 Resistor

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TCE of tested Substrates

10 20 30

Aluminium EN AW 6060 AlSi CE 17 (Osprey Metal) Austenitic steel 1.4435 Ferritic steel 1.4016 AlSi CE 11 (Osprey Metal) AlSi CE 9 (osprey Metal) Alumina

(ppm/K)

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Studied dielectric compositions

Aluminium

~12 ~500

40 ~3

quartz

V8 V8Q40 ~7-8 ~7-8 ~10-11 ~8 ~13 ~9

TCE (ppm/K)

~3

~1

10…20

~1

Grain Size (µ m)

Alumina
Steels

850

(ESL

4916) +ESL 4924

Alumina
Steels

850

(ESL

4916) +Her GPA

Steels

~600

50 quartz

V6 V6Q50

. Steels

~600

40 Al2O3

V6 V6A40

Aluminium

~500

40

Cristo- balite

V8 V8C40

Aluminium
AlSi composites

~500

40 Al2O3

V8 V8A40

Substrate screen-printed Tf (°C) % filler powder Filler glass Deno- mination

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Dielectrics & resistor Compositions

Dielectric composition Resistor composition

400 nm
Firing temperature 500°C

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Paste preparation

Mixing powder SiO2, B2O3, PbO, Al2O3 Milling, sieving of glass powder Mixing glass powder –filler powder Al2O3 or SiO2 powder Organic vehicle Mixing in the tri-cylinder Dielectric paste melting

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Screen-printing sequence

Substrate Dielectric Resistor

Conductor Conductor

Basic structure

40µm

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Samples for characterisation

TCR measurement Gauge Factor measurement

Longitudinal resistors Transverse resistors

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Adhesion & Crack problems

Non adherence on non-oxidised substrates

Adhesion Crack problems Oxidation 1h @ 900°C Match TCE

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Dissolution of SiO2 powder in glass

Effect on resistors…

glass + SiO2 SiO2 - rich glass SiO2 particles & low-temp. glass

625°C 600 °C Dissolution Temperature

f SiO2 (10% filled)

V6 glass V8 glass

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Results: Aluminium alloy Substrates

Low Temperature range

V8 glass + 40% cristobalite V8 glass + 40% quartz V8 glass + 50% cristobalite V8 glass + 50% quartz

20'000 40'000 60'000 80'000 100'000 120'000 140'000 160'000 180'000 200'000 450 500 550 600 Sheet resistance [Ohm] Dielectric Firing Temperature [C]

300
250
200
150
100
50

50 450 475 500 525 550 575 600 Dielectric Firing Temperature [C] HTCR [ppm/K]

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Results: AlSi composite Substrates

Low Temperature range

AlSi CE 9 AlSi CE 11 AlSi CE 17

300
200
100

100 200 500 525 550

HTCR [ppm/K] Dielectric Firing Temperature [C]

20'000 40'000 60'000 80'000 100'000 120'000 480 500 520 540 560

Sheet resistance [Ohm] Dielectric Firing Temperature [C]

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Results: Steel Substrates

Low Temperature range

Alumina V8 glass + 40% alumina on 1.4016 V8 glass + 40% alumina on 1.4435 V8 glass + 40% quartz on 1.4016 V8 glass + 40% quartz on 1.4435

20'000 40'000 60'000 80'000 100'000 120'000 140'000 160'000 500 525 550

Firing Temperature (°C) Sheet Resistance (Ohms)

200
150
100
50

500 525 550

Firing Temperature (°C) HTCR (ppm/K)

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Results: Steel Substrates

Intermediate Temperature range

5000 10000 15000 20000 25000 30000 35000 40000 45000

Dielectric Firing Temperature (°C)

Sheet Resistance (Ohms)

Alumina V6 glass + 40% alumina on 1.4016 V6 glass + 40% alumina on 1.4435 V6 glass + 50% quartz on 1.4016 V6 glass + 50% quartz on 1.4435

225
175
125
75
25

25 75

Dielectric Firing Temperature (°C)

TCR (ppm/K)

575°C 600°C 575°C 575°C

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Results: Steel Substrates

High Temperature range

Alumina 1.4016 850°C 1.4435 850°C

5000 10000 15000 20000 25000 (alumina) GPA 98-029 4924

Dielectric

Sheet resistance (Ohms)

50 100 150 200 250 300 (alumina) GPA 98-029 4924

Dielectric

TCR (ppm/K)

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27

23.4

525

Aluminium

13 V8C40

6

47

19.3

525

Aluminium

12 V8Q40

145

28.6

550

1.4016

41

25.9 1.4435

124

26.1

575 ESL 3114

1.4016

8 V6A40

178

24.9

600

1.4016

10-11 V6Q50

10.6 104 17.6 1.4016

218

20.7 1.4435 38 19.9 Alumina

~7-8

ESL 4924 (+ ESL 4916 as under-layer on steel)

9.9 136 19.3 1.4016

79

22.7

500 V8 Resistor

AlSi comp. CE 9

9 V8A40

1.4435 Alumina 1.4435 1.4435 AlSi comp. CE 11

Substrate

Her GPA (+ ESL 4916 as under-layer on steel)

Insulting Dielectric

850

System Firing Temp.(°C)

Du 2041

Resistor paste

~7-8

Dielectric TCE (ppm/K)

12.1 243 22.2 12.4 39 14.6

53

39.8

73

34.5

104

23.9

GF TCR (ppm/K) Sheet resistance (kOhms)

Electrical results

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Gauge factor results

Similar gauge factors

2 4 6 8 10 Alumina 1.4016 - V8A40 525°C 1.4016 - V8Q40 500°C 1.4016 - V8A40 525°C 1.4016 - V8A40 550°C 1.4435 - V8A40 525°C 1.4435 - V8Q40 500°C 1.4435 - V8A40 525°C 1.4435 - V8A40 550°C Al - V8Q40 500°C Al - V8A40 525°C Al - V8A40 550°C

D i e l e c t r i c s

G a u g e F a c t

r

Transverse Longitudinal

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Conclusions

Dielectric – resistor chemical compatibility Very low processing temperature achieved Compatible with wide range of substrates Matching of thermal expansion is critical

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CTE range: glass + SiO2

Little reaction: very wide range of CTE values possible

due to different forms of SiO2

Fully reacted: OK for alumina, float glass & Ti

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Outlook

Fillers: improve stability and

reproducibility of dielectrics

Control of TCR of our resistors through

additives (CuO, NiO, TiO2, Sb2O3)

Materials without Pb or precious metals

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