How big problem is Cu contamination in crystalline silicon photovoltaics?
Hele Savin
Aalto University Department of Electronics and Nanoengineering Electron Physics Group Espoo, Finland
How big problem is Cu contamination in crystalline silicon - - PowerPoint PPT Presentation
How big problem is Cu contamination in crystalline silicon photovoltaics? Hele Savin Aalto University Department of Electronics and Nanoengineering Electron Physics Group Espoo, Finland (population ~ 5 million) 5.10.2019 2 5.10.2019 3
Hele Savin
Aalto University Department of Electronics and Nanoengineering Electron Physics Group Espoo, Finland
5.10.2019 2
(population ~ 5 million)
5.10.2019 3
5.10.2019 4
Helsinki School of Economics University of Art & Design Helsinki Helsinki University of Technology
full-time equivalent degree students A staff of about 4 000, of which nearly 400 are professors
companies
installed
upgraded to 200 mm
http://www.micronova.fi/
http://www.micronova.fi/
F1 Flip-chip Bonding F2 Wet Processing F3 Nanolithography F4 Plasma and Sputtering F5 Plating F6 Metrology F7 Furnace F8 Lithography F9 ALD F10 Plasma F11 Wafers F12 Chemistry F13 Analysis Lab
http://www.micronova.fi/
F1 Flip-chip Bonding F2 Wet Processing F3 Nanolithography F4 Plasma and Sputtering F5 Plating F6 Metrology F7 Furnace F8 Lithography F9 ALD F10 Plasma F11 Wafers F12 Chemistry F13 Analysis Lab
2.2.2016 9
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Cast-Mono in MEMS&NEMS
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Certified EQE in UV > 130% Cast-Mono in MEMS&NEMS
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Utilize LID in Integrated Circuits Certified EQE in UV > 130% Cast-Mono in MEMS&NEMS
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Reference Cu-contaminated
Fe Cu
Fe Cu
Fe Cu
ECS Trans. 11, 319 (2007)
concentration Benefits:
separated
ref (no Cu) low Cu med Cu high Cu high low
ref (no Cu) low Cu med Cu high Cu high low
ref (no Cu) low Cu med Cu high Cu high low
ref (no Cu) low Cu med Cu high Cu high low
ref (no Cu) low Cu med Cu high Cu high low
Cu contaminated spot
High lifetime Low lifetime
𝐷𝐷𝑣 ∝ 𝑂𝑢
∗ =
1 τ𝑒𝑓𝑠𝑏𝑒𝑓𝑒 − 1 τ𝑗𝑜𝑗𝑢𝑗𝑏𝑚
Cu contaminated spot
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AIP Advances 8, 015112 (2018)
Cu
Phosphorus-doped region
Cu Cu
30
AIP Advances 8, 015112 (2018)
Cu
Phosphorus-doped region
Cu Cu
10 20 30 40 50 Position [mm]
Normal cooling after POCl3 + light soak
170 210 250 290 330 370 410
Diffusion length [m]
31
AIP Advances 8, 015112 (2018)
Cu
Phosphorus-doped region
Cu Cu
10 20 30 40 50 Position [mm] 10 20 30 40 50 170 210 250 290 330 370 410
Position [mm] Diffusion length [m]
Normal cooling after POCl3 + light soak
170 210 250 290 330 370 410
Diffusion length [m]
Slow cooling after POCl3 + light soak
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Solar Energy Materials and Solar Cells 186, 373-377 (2018)
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Solar Energy Materials and Solar Cells 186, 373-377 (2018)
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Solar Energy Materials and Solar Cells 186, 373-377 (2018)
recombination active
recombination active
Cu precipitates → electrostatic attraction
precipitation kinetics, recombination parameters… )
experiments
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recombination active
recombination active
Cu precipitates → electrostatic attraction
precipitation kinetics, recombination parameters… )
experiments
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Still cannot see anything here in e.g. TEM / DLTS…
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Solar Energy Materials and Solar Cells 134 (2018)
Formation of recombination active precipitates - supersaturation (fast reaction) Precipitate dissolution – diffusion to surfaces (slow reaction)
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Solar Energy Materials and Solar Cells 134 (2018)
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Solar Energy Materials and Solar Cells 134 (2018)
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Silicon PV 2019
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2.2.2016 46
Funding acknowledgements: