SLIDE 6 Feasibility study of imaging APD sensor using Silicon-On-Insulator technology
6
R.Hamasaki (SOKENDAI)
- Backside illumination.
- Multiplication of avalanche linear mode.
- Structure of charge collecting electric field.
- SOI circuits and Low noise in-pixel amplifier.
Idea of SOI Photon Avalanche Detector
X-ray/optical imaging sensor based on SOI technology Poster #5
UV ~ Low Energy X-rays make few electron and hole in backside PN junction In Fig1. This carriers are multiplied by avalanche linear mode and collected to small sense of frontside by the structure of charge collecting electric filed which are made of 2nd PN junction.These low level signal of detection is processed avalanche and in-pixel amplifier with SOI-circuits. SOI-amplifier is suitable technique however backside avalanche system is proposed the Fig2,In Fig3 case, standard CMOS used for planner well and pin structure on backside which can not be made immediately.
- Figure2. realistic structures.
(Left device for X-rays sensitivity) (Right device for UV sensitivity)
- Figure3. unrealistic structures.
(Both device of backside is standard CMOS-APD ) Figure1.SOI photon avalanche detector
Structure of electric field collection Linear mode avalanche amplification
Realistic backside structure of a manufacturing process for SOI photon avalanche detector
To develop new SOI photon avalanche detector,we need optimization of designing that Linear mode APD layout and back-illuminated wafer effect with SOI process.therefore we start simulation study about the structure of electric field collection and multiplication of avalanche linear mode.In this poster, we made a original profile data to satisfy it. This structure make field collection structure which mean generated carrier on backside is going to frontside and collecting to center sense .
Simulation study of the structure and avalanche multiplication
