Highlights of Poster Session Masashi Yokoyama Department of - PowerPoint PPT Presentation

Highlights of Poster Session Masashi Yokoyama Department of Physics, Graduate School of Science The University of Tokyo The International Conference on New Photo-Detectors (PD15) Moscow, Russia, July 6 - 9, 2015

Preface • Requirements: introduce 25 posters in 20 minutes 
 or less, as we are behind the schedule • Just brief preview of contents • 1 page / poster • Not want to spoil the poster presentations too much 
 (both contents and time) • Sorry if I miss the important point of presentation 
 All mistakes are due to myself • Please visit posters for real contents !! 
 .. and find out if I did a reasonable job in this talk • Thanks to all poster presenters for sending me highlight material in advance! 2

Topics of posters • Development of photodetectors • New device development • Device modeling • Characterization of photodetectors • Development of detectors using photodetectors • Detector concepts • Electronics • Large detector systems Very interesting posters covering wide topics! Introduce in roughly this order (not poster ID) 3

Development of 
 photo-detectors and 
 related material

Poster #20 Improved Performance and High Fill Factor TSV Packaged SiPM and Reliability and Testing of High-Volume Production SiPM C. Jackson, L. Wall, K. O’Neill, B. McGarvey (SenSL) Dark rate reduction TSV DEVELOPMENT Package Testing and Reliability eliability testing. cuits. The Cross-sectional diagram of the TSV package concept. Top and bottom of the TSV package. PDE before and after high-temperature operating life stress test. Improvement of performance and packaging by SenSL Learn about performance, testing and reliability 5

Figure2. realistic structures. SOI-amplifier is suitable technique however backside avalanche system is proposed the Fig2,In Fig3 case, standard CMOS back-illuminated wafer effect with SOI process.therefore we start simulation study about the structure of electric To develop new SOI photon avalanche detector,we need optimization of designing that Linear mode APD layout and Realistic backside structure of a manufacturing process for SOI photon avalanche detector Linear mode avalanche amplification Structure of electric field collection Figure1.SOI photon avalanche detector (Both device of backside is standard CMOS-APD ) Figure3. unrealistic structures. (Right device for UV sensitivity) (Left device for X-rays sensitivity) collection structure which mean used for planner well and pin structure on backside which can not be made immediately. made of 2nd PN junction.These low level signal of detection is processed avalanche and in-pixel amplifier with SOI-circuits. This structure make field avalanche linear mode and collected to small sense of frontside by the structure of charge collecting electric filed which are UV ~ Low Energy X-rays make few electron and hole in backside PN junction In Fig1. This carriers are multiplied by generated carrier on backside is SOI Photon Avalanche Detector Idea of - SOI circuits and Low noise in-pixel amplifier. - Structure of charge collecting electric field. - Multiplication of avalanche linear mode. - Backside illumination. going to frontside and collecting to center sense . field collection and multiplication of avalanche linear mode.In this poster, we made a original profile data to satisfy it. Poster #5 Feasibility study of imaging APD sensor using Silicon-On-Insulator technology R.Hamasaki (SOKENDAI) X-ray/optical imaging sensor based on SOI technology Simulation study of the structure and avalanche multiplication 6

Poster #15 Challenges of arbitrary waveform signal detection by SiPM in beam loss monitoring systems with Cherenkov fibre readout S.Vinogradov (Liverpool/Cockcroft Institute/Lebedev Physical Institute) 6.0E-06 Pixel load λτ = 5 Intensity 3 phe/pix/rec Mean SiPM response, arb. un. Pixel load λτ = 1 5.0E-06 Intensity 1 phe/pix/rec Pixel load λτ = 0.5 Probability Density Function Intensity 0.3 phe/pix/rec Pixel load λτ = 0.1 Intensity 0.1 phe/pix/rec 4.0E-06 2 σ ENF 1 Gain = + 2 3.0E-06 Gain 2.0E-06 1.0E-06 0 2 4 6 8 10 0.0E+00 0.0E+00 2.0E+05 4.0E+05 6.0E+05 8.0E+05 1.0E+06 Time, relative to pixel recovery time Gain Fig. 1. Random Gain PDF of recovering pixels. Fig.4 Reward-renewal model of SiPM response Response model of SiPM considering nonlinearity and recovery process 7 =

Poster #17 Two Models of Micropixel Avalanche Photodiode Response V.Zhezher (JINR) Avalanche development in a pixel MC simulation taking into account 
 optical cross-talk and dark noise Number of carriers and electric field Models of avalanche response and comparison to data 8

Poster #13 3x3 mm 2 SensL SiPM characterization for the NewCHOD detector of the NA62 experiment, CERN S.Fedotov, A.Kleimenova (INR, MEPhI) View of SiPM MicroFC-30035-SMT SensL Scheme of measurements Characterization of 500 SiPM’s for Charged-particle HODoscope of NA62 9

Poster #8 Study of the characteristics of SiPMs matrix as a photosensor for the scintillation detectors I.Dzaparova (INR RAS) The number of photoelectrons vs. amplitude of the SiPMs pulses. Characterizing 8 × 8 SiPM matrix from SenSL 10

Poster #21 Study of the MAPD performance for the electromagnetic calorimeter of the COMPASS-II experiment A.Selyunin (JINR) Fig.4. The Shashlyk calorimeter module design. Fig.2. Spectra and characteristics of MAPD-3N and MPPC S12572-010P Need ~10 4 /mm 2 pixel density for wide dynamic range Performance of various type of MAPD compared 11

Poster #3 Development of radiation tolerant silicon photomultipliers using Synopsys TCAD P .Parygin (NRNU MEPhI) Simulated*structure* Radiation hardness is one of issues with PPD/SiPM Samples were produced based on TCAD simulation Measurement results before/after irradiation compared to simulation 12

Poster #18 Investigation of avalanche photodiodes after irradiation with neutrons up to 5*10 14 n/cm 2 A. Karneyeu and Yu. Musienko (INR RAS) “Effective” QE vs. wavelength before and after irradiation (Gain=19, T=25 ° C) Radiation effects on Hamamatsu APD characterized 13

Poster #19 Studies of vacuum photomultipliers at extremely low thresholds, photoelectron backscattering and photon detection efficiency B.Lubsandorzhiev (INR RAS) Charge distribution of R1464 PMT 
 Charge distribution of R8055 PMT 
 with ~0.002 pe threshold with ~0.002 pe threshold Effect of backscattering and direct photoemission on the first dynodes studied 14

Poster #7 Nanostructured Organosilicon Luminophores As Effective Spectral Shifters In A Wide Spectral Region O.Borshchev (ISPM RAS) Two different chromophores are connected to each other via silicon atoms 8 S iP M+++NOL 1 abs orption,+opt.dens +/+other,+arb.+units d+=+300+nm 7 6 abs -NO L 1 5 P D E 4 S iP M-+-NO L 1-(d=300nm) 3 P D E S iP M 2 lum-NO L 1 1 0 5 200 300 400 500 600 700 800 waveleng th,+nm Nanostructure Organosilicon Luminophores (NOL) opens possibilities for wide application as spectral shifters over entire visible spectrum 15

Development of detectors using photo- detectors

Poster #4 New type of scintillation detectors of thermal neutrons based on ZnS(Ag) /LiF and avalanche photodiodes V.Marin (INR RAS) The construction of the prototype neutron counter 1. Scintillator ZnS/LiF 2. Optical guide 3. Focons 4. Avalanche photodiodes. e 252 Cf 252 Cf ZnS/LiF ZnS/LiF SiPM SiPM polyethylene polyethylene А А А А amplifier adc adc 10mm, strob 250 нс strob 250 нс Д Д Д Д discriminator Coincidence Coincidence circuit circuit Test results at pulsed neutron source EXPERIMENTAL STAND FOR MEASURIMENT PARAMETERS OF THE PROTOTYPE DETECTOR 17

Poster #22 A neutron detector with WLS-fibers readout and SiPM V.Litvin (INR RAS) Low cost: 2N SiPM → N2 pixels High efficiency due to possibility of multi-layer assemble Array of SiPM With thermal neutrons Array of SiPM N, count/chan. No thermal neutrons Q, chan. Neutron detector with LiF/ZnS sheet, WLS and SiPM Test results presented 18

Poster #6 Development of a gamma camera based on silicon photomultipliers E.Lazarenko (MEPhI) Direct coupling to NaI(Tl) ! With WLS fiber Figure!2.!Registered!spectrum!of!CsG137!!on!NaI(Tl)! by!SiPMGMaroc!system.! Results with two types of prototype detectors 19

Poster #23 Design of Large Scale Detectors Based on Polystyrene Solid Scintillators Made of Granulated Polystyrene with WLS Fibers Light Collection A.Gorin (IHEP) 60 B 2000 500 The sketches of 1 mm Y11 WLS fibers (green) placed inside the grooves in scintillators Test results with large area scintillator 20