Heusler Alloy Replacement for Iridium Atsufumi Hirohata Participant - - PowerPoint PPT Presentation

heusler alloy replacement for iridium
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Heusler Alloy Replacement for Iridium Atsufumi Hirohata Participant - - PowerPoint PPT Presentation

Heusler Alloy Replacement for Iridium Atsufumi Hirohata Participant Pitches Department of Electronics November 2013 Knowledge Transfer Networks Accelerating business innovation; a Technology Strategy Board programme Topic (s) of interest and


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SLIDE 1

Knowledge Transfer Networks

Accelerating business innovation; a Technology Strategy Board programme

Participant Pitches

November 2013

Department of Electronics Atsufumi Hirohata

Heusler Alloy Replacement for Iridium

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SLIDE 2

Knowledge Transfer Networks

Accelerating business innovation; a Technology Strategy Board programme

Topic (s) of interest and project idea

* http://www.atheistfrontier.com/people/dmitri-mendeleyev/periodic-table-of-the-elements-for-kids.jpg

  • Melting point : > 3,000°C

→ Very stable

  • Almost no applications previously
  • World supply : ~ 5.8 t / yr

→ 87 % from South Africa

  • 1 ~ 2 % in Pt and Rh ore
  • The scarecest element

→ 4 × 10 -4 ppm Comparisons Nd : 33 ppm Li : 17 ppm Dy : 6.2 ppm Pt : 3.7 × 10 -3 ppm Au : 3.1 × 10 -3 ppm Ru : 1 × 10 -3 ppm

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SLIDE 3

Knowledge Transfer Networks

Accelerating business innovation; a Technology Strategy Board programme

Organisation

Tohoku

Heusler-alloy GMR

Device concept using Ir-free Heusler-alloy antiferromagnet Bielefeld

Heusler-alloy TMR, XMLD

York

York model, TEM, e-beam

New alternative material for spintronics Konstanz / Budapest

interfacial atomistic modelling

KEK

synchrotron, XMCD, PNR

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SLIDE 4

Knowledge Transfer Networks

Accelerating business innovation; a Technology Strategy Board programme

What I have to offer and partners sought

Pinned ferromagnet Non-magnet Free ferromagnet

  • r

Mfree Mpin

Pinning by exchange bias

Antiferromagne t Current IrMn

Replacement with a Heusler alloy

Spin-valve structure

  • Large exchange bias

(> 3.5 kOe)

  • Low set temperature

(~ 250°C)

  • Thin-film form

(~ 6 nm) HDD read head : Magnetic random access memory (MRAM) :