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Convolutional Multiple Whole Profile Fitting G abor Rib arik - - PowerPoint PPT Presentation

Convolutional Multiple Whole Profile Fitting G abor Rib arik ribarik@renyi.hu Department of Materials Physics, Institute of Physics, E otv os University, Budapest, P .O.Box 32, H-1518, Hungary CMWP p.1/70 Introduction:


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SLIDE 1

Convolutional Multiple Whole Profile Fitting

G´ abor Rib´ arik

ribarik@renyi.hu

Department of Materials Physics, Institute of Physics, E¨

  • tv¨
  • s University, Budapest,

P .O.Box 32, H-1518, Hungary

CMWP – p.1/70

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SLIDE 2

Introduction:

extracting microstructure using X-ray line profile analysis modeling size and strain broadening the MWP method the CMWP method CMWP application to ball milled Al-Mg alloys the CMWP program

CMWP – p.2/70

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SLIDE 3

(C)MWP-fit

These methods are in fact: Whole Profile fitting, or Whole Powder Pattern fitting methods microstructural methods: the unit cell is NOT refined The aim is microstructure in terms of: size strain

CMWP – p.3/70

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SLIDE 4

Theory

The Fourier coefficients of the line profiles (Warren & Averbach, 1952):

A(L) = AS(L)AD(L),

this means that the observed profile is the convolution of size and strain profiles. If more physical effects and instrumental effects are simultaneously present:

A(L) = Ainstr.(L)Asize(L)Adisl.(L)Apl.faults(L) · · · , I(2Θ) = Iinstr.(2Θ)∗ Isize(2Θ)∗ Idisl.(2Θ)∗ Ipl.faults(2Θ)∗· · ·

CMWP – p.4/70

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SLIDE 5

The size effect

If we suppose: spherical crystallites lognormal f(x) size distribution density function:

f(x) = 1 √ 2πσ 1 x exp   −

  • log

x m 2 2σ2    ,

(m and σ are the two parameters of the distribution).

CMWP – p.5/70

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SLIDE 6

The size effect

The size intensity profile (Gubicza et al, 2000):

IS(s) =

  • µ sin2(µ πs)

(πs)2 erfc   log µ m

2σ   dµ,

where erfc is the complementary error function:

erfc(x) = 2 √π

  • x

e−t2 dt.

CMWP – p.6/70

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SLIDE 7

The size effect

If we suppose (Ribárik et al, 2001): ellipsoidal crystallite shape lognormal size distribution density function

IS(s) has the same form than in the spherical case but m

depends on the indices of reflection:

mhkl = ma

  • 1 +

1 ε2 − 1

  • cos2 α

,

(ma: the m parameter of the size distribution in the direction

a, ε: ellipticity, α: the angle between the axis of revolution

and the diffraction vector).

CMWP – p.7/70

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SLIDE 8

The size effect

If the relative orientations of the crystallographic directions to the axis of revolution are known, cos α can be expressed by the indices of reflection. For cubic systems:

cos α = l √ h2 + k2 + l2

For hexagonal systems:

cos α = l

  • 4

3 c2 a2 (h2 + hk + k2) + l2

CMWP – p.8/70

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SLIDE 9

The Size Fourier Transform:

It can be expressed in an almost closed form which is suitable for fast numeric evaluation (Ribárik et al, 2001):

AS(L, m, σ) = m3 exp 9 4( √ 2σ)

2

3 erfc     log

  • |L|

m

2σ − 3 2 √ 2σ     − m2 exp ( √ 2σ)

2

2 |L| erfc     log

  • |L|

m

2σ − √ 2σ     + |L|3 6 erfc     log

  • |L|

m

2σ     .

CMWP – p.9/70

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SLIDE 10

The strain effect

The distortion Fourier coefficients (Warren & Averbach, 1952):

AD(L) = exp

  • −2π2g2L2ε2

L

  • ,

where

g is the absolute value of the diffraction vector, ε2

L is the mean square strain.

The most important models for ε2

L:

Warren & Averbach (1952) Krivoglaz & Ryaboshapka (1963) Wilkens (1970)

CMWP – p.10/70

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SLIDE 11

The Wilkens dislocation theory

Wilkens introduced the effective outer cut off radius of dislocations, R∗

e, instead of the crystal diameter.

Assuming infinitely long parallel screw dislocations with

restrictedly random distribution (Wilkens, 1970):

ε2

L =

b 2π 2 πρ Cf∗ L R∗

e

  • ,

where f∗ is the Wilkens strain function (Wilkens, 1970). Kamminga and Delhez (2000) have shown that this strain function is also valid for edge- and curved dislocations. The distortion Fourier–transform in the Wilkens model:

AD(L) = exp

  • −πb2

2 (g2C)ρL2f∗ L R∗

e

  • .

CMWP – p.11/70

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SLIDE 12

The Wilkens strain function

f∗(η) = − log η + 7 4 − log 2

  • + 512

90π 1 η+ 2 π

  • 1 − 1

4η2 η

  • arcsin V

V dV − 1 π 769 180 1 η + 41 90η + 2 90η3 1 − η2− 1 π

  • 11

12 1 η2 + 7 2 + 1 3η2

  • arcsin η + 1

6η2, if η ≤ 1, f∗(η) = 512 90π 1 η − 11 24 + 1 4 log 2η 1 η2, if η ≥ 1,

where f

  • L

R∗

e

  • = f∗(η) and η = 1

2 exp

  • −1

4 L R∗

e .

CMWP – p.12/70

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SLIDE 13

The Wilkens strain function

  • 2
  • 1

1 2 3 4 5 6 7 2 4 6 8 10

f*(η) η f*(η)

The Wilkens function and its approximations: − log η + „7 4 − log 2 « and 512 90π 1 η .

CMWP – p.13/70

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SLIDE 14

The dislocation arrangement parameter

Wilkens introduced M∗, a dimensionless parameter:

M∗ = R∗

e

√ρ

The M∗ parameter characterizes the dislocation arrangement: if the value of M∗ is small, the correlation between the dislocations is strong if the value of M∗ is large, the dislocations are distributed randomly in the crystallite

CMWP – p.14/70

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SLIDE 15

R∗

e << 1 √ρ

R∗

e >> 1 √ρ

M∗ << 1 M∗ >> 1

CMWP – p.15/70

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SLIDE 16

The strain profile for fixed ρ and variable M ∗ values:

CMWP – p.16/70

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SLIDE 17

The shape of the strain profile for fixed ρ and variable M ∗ values:

CMWP – p.17/70

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SLIDE 18

Strain anisotropy

According to (Ungár & Tichy, 1999), the average contrast factors of dislocations can be expressed in the following form for cubic crystals:

C = Ch00(1 − qH2),

where

H2 = h2k2 + h2l2 + k2l2 (h2 + k2 + l2)2 .

CMWP – p.18/70

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SLIDE 19

For hexagonal crystals:

C = Chk0(1 + a1H2

1 + a2H2 2),

where

H2

1 =

[h2 + k2 + (h + k)2] l2 [h2 + k2 + (h + k)2 + 3

2(a c)2l2]2,

H2

2 =

l4 [h2 + k2 + (h + k)2 + 3

2(a c)2l2]2,

and a

c is the ratio of the two lattice constants.

CMWP – p.19/70

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SLIDE 20

For orthorombic crystals:

Chkl = Ch00

  • H2

0 + a1H2 1 + a2H2 2 + a3H2 3 + a4H2 4 + a5H2 5

  • ,

where:

H2

0 =

h4 a4

h2 a2 + k2 b2 + l2 c2

”2

H2

1 =

k4 b4

h2 a2 + k2 b2 + l2 c2

”2

H2

2 =

l4 c4

h2 a2 + k2 b2 + l2 c2

”2

CMWP – p.20/70

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SLIDE 21

H2

3 =

h2k2 a2b2

h2 a2 + k2 b2 + l2 c2

”2

H2

4 =

l2h2 c2a2

h2 a2 + k2 b2 + l2 c2

”2

H2

5 =

k2l2 b2c2

h2 a2 + k2 b2 + l2 c2

”2

and a, b, c are the lattice constants. The constants Ch00 and Chk0 are calculated from the elastic constants of the crystal (Ungár et al, 1999).

CMWP – p.21/70

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SLIDE 22

Planar and twin faults:

The peak profile is the sum of a delta function and shifted and broadened Lorentzian profile functions the FWHM and shift value of the Lorentzians depend on the density of faults

hkl-dependence: DIFFaX software (Treacy et al., Proc.

  • Roy. Soc., 1991)

The parameters were systematically calculated for each fundamental types of planar faults by Dr. Levente Balogh (see: L. Balogh, PhD thesis, Eötvös University, 2009).

CMWP – p.22/70

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SLIDE 23

Microstructural parameters

(C)MWP-fit provides:

size: m, σ, ε dislocations: ρ, M, q planar and twin faults: α, β

CMWP – p.23/70

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SLIDE 24

Multiple Whole Profile (MWP) fitting

The method (Ribárik et al, 2001) is: a Whole Profile fitting method using ab-initio theoretical profile functions a Fourier method, which works on multiple profiles simultaneously The data must be prepared before applying the method: the profiles should be separated the instrumental broadening is corrected for by deconvolution using the Stokes method the separated and instrumental-free profiles are Fourier-transformed

CMWP – p.24/70

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SLIDE 25

MWP: profile separation

0.2 0.4 0.6 0.8 1

  • 2
  • 1.5
  • 1
  • 0.5

0.5 1 Intensity ∆K [1/nm] 100 101 004 M3377.dat bg(x)+I(x) bg(x) p0+p1x I(x) I1(x) I2(x)

Example for the profile separation in the case of the strong overlapping peaks of a carbon black sample.

CMWP – p.25/70

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SLIDE 26

MWP: instrumental correction

Example for the instrumental deconvolution in the case of an Al-6Mg sample. The A(L) Fourier transforms of the measured profile, the instrumental profile and the corrected profile are plotted as a function of L.

CMWP – p.26/70

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SLIDE 27

MWP: instrumental correction

Example for the instrumental deconvolution in the case of an Al-6Mg sample. The raw measured and the corrrected intensity profile are plotted as a function of K.

CMWP – p.27/70

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SLIDE 28

MWP-fit

(i) Multiple Whole Profile fitting of the Fourier–transforms. the measured intensity profiles are Fourier–transformed and normalized, they are fitted simultaneously by the normalized theoretical Fourier–transform:

A(L) = AS(L) AS(0) exp

  • −πb2

2 (g2C)ρL2f L R∗

e

  • ,

CMWP – p.28/70

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SLIDE 29

MWP-fit

(ii) Multiple Whole Profile fitting of the intensity profiles. In this procedure first the measured intensity profiles are

  • normalized. Then all of them are fitted simultaneously

by the normalized theoretical intensity function:

I(s) = Fc(s) Fc(0) ,

where Fc is the Cosine Fourier–transform of (??):

Fc(s) = 2

  • A(L) cos(2πLs) dL.

In both cases [(i) and (ii)] all profiles are fitted simultaneously using a nonlinear least-squares algorithm.

CMWP – p.29/70

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SLIDE 30

MWP application to Cu sample

  • 0.2

0.2 0.4 0.6 0.8 1 1.2 200 400 600 800 1000 Normalized Amplitude Frequency [nm] 111 200 220 311 222 400 measured data theoretical curve

Results of the MWP fit:

m = 62nm

σ = 0.53 ρ = 1.7 · 1015 m−2

M = Re√ρ = 1.7 q = 1.84

The measured (solid lines) and theoretical fitted (dashed lines) Fourier transforms for copper sample deformed by ECAP (equal-channel angular pressing) as a function of the Fourier Frequency, L. The difference plot is also given.

CMWP – p.30/70

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SLIDE 31

MWP application to PbS sample

  • 0.2

0.2 0.4 0.6 0.8 1 1.2 200 400 600 800 1000 1200 1400 1600 1800 Normalized Amplitude Frequency [nm] 111 200 220 311 222 400 331 420 422 measured data theoretical curve

The measured (solid lines) and theoretical fitted (dashed lines) Fourier–transforms for PbS sample as a function of the Fourier variable (Frequency), L, plotted by the program

  • evaluate. The difference plot is also given in the bottom of the figure.

CMWP – p.31/70

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SLIDE 32

MWP application to PbS sample

  • 0.2

0.2 0.4 0.6 0.8 1 1.2 0.2 0.4 0.6 0.8 1 1.2 1.4 Normalized Intensity ∆K [1/nm] 111 200 220 311 222 400 331 420 422 measured data theoretical curve

The measured (solid lines) and theoretical fitted (dashed lines) intensity profiles for PbS sample plotted by the program evaluate. The difference plot is also given in the bottom of the figure. The indices of reflections are also indicated.

CMWP – p.32/70

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SLIDE 33

Comparison with TEM

0.002 0.004 0.006 0.008 0.01 0.012 0.014 50 100 150 200 250 size distribution crystallite size [nm] m=62, σ=0.53 TEM data

The size distribution density function corresponding to the parameters of the MWP fit and the size distribution obtained by TEM for an ECA pressed copper sample.

CMWP – p.33/70

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SLIDE 34

Comparison with TEM

The TEM micrograph (a) and the size distribution functions (b) measured by TEM and X-ray line profile analysis for nanoncrystalline Si3N4 particles.

CMWP – p.34/70

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SLIDE 35

Comparison with TEM

(a) High resolution TEM image of nanocrystalline titanium sample (b) Fourier-filtered image from the white frame in (a), showing the dislocation arrangement in the grain boundary.

CMWP – p.35/70

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SLIDE 36

Convolutional MWP (CMWP) fitting

When the MWP fitting procedure is used: the deconvolution of the physical and the instrumental profiles introduces noise, the selection of the analytical function used in the peak separation influences the shape of the individual profile. When the CMWP method (Ribárik et al, 2004) is used: the whole measured powder diffraction pattern is fitted by the sum of a background polinom and profile functions. the profile functions are calculated as the convolution of the theoretical functions for physical broadening and the instrumental profiles. Therefore neither the separation of the peaks nor the deconvolution is needed.

CMWP – p.36/70

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SLIDE 37

The theoretical intensity pattern

Itheoretical = BG(2Θ) +

  • hkl

Ihkl

MA XIhkl(2Θ − 2Θhkl 0 ),

where:

Ihkl = Ihkl

  • instr. ∗ Ihkl

size ∗ Ihkl

  • disl. ∗ Ihkl

pl.faults,

Ihkl

instr.: measured instumental profile which is directly used

The measured and theoretical patterns are compared using a nonlinear least-squares algorithm, the fitted parameters are the microstructural parameters (no individual profile parameters are used).

CMWP – p.37/70

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SLIDE 38

Instrumental pattern of LaB6

2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 20 40 60 80 100 120 140 160 Intensity 2Theta LaB6

CMWP – p.38/70

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SLIDE 39

Instrumental pattern of LaB6

2000 4000 6000 8000 10000 12000 14000 16000 18000 20000 25 30 35 40 Intensity 2Theta LaB6

CMWP – p.39/70

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SLIDE 40

Al-3Mg ball milled 3 h.

10000 20000 30000 40000 50000 60000 40 60 80 100 120 140 Intensity 2θ [o] 111 200 220 311 222 400 331 420 422 measured data theoretical curve difference

100 1000 10000 100000 40 60 80 100 120 140 Intensity Counts 2θ [o] 111 200 220 311 222 400 331 420 422 measured data theoretical curve

CMWP – p.40/70

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SLIDE 41

Al-6Mg ball milled 6 h.

10000 20000 30000 40000 50000 40 60 80 100 120 140 Intensity 2θ [o] 111 200 220 311 222 400 331 420 422 measured data theoretical curve difference

100 1000 10000 100000 40 60 80 100 120 140 Intensity Counts 2θ [o] 111 200 220 311 222 400 331 420 422 measured data theoretical curve

Results of the CMWP fit:

m = 21nm

σ = 0.36 ρ = 1016 m−2

M = Re√ρ = 1.3 q = 1.3

CMWP – p.41/70

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SLIDE 42

Al-20Mg ball milled 32 h.

  • 2000

2000 4000 6000 8000 10000 12000 14000 16000 30 40 50 60 70 80 90 100 110 120 Intensity 2θ [o] 111 200 220 311 222 400 331 420 measured data theoretical curve difference

1000 10000 100 Intensity 2θ [o] 111 200 220 311 222 400 331 420 measured data theoretical curve

CMWP – p.42/70

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SLIDE 43

Microstructure of ball milled Al-20Mg

1 2 3 4 5 6 5 10 15 20 25 30 35 ρ [1015 1/m2] milling period [h] "Al-Mg-t-rho-spline.dat" using 1:2

(Révész et al., J. of Metast. and Nanocr. Mat., 2005)

CMWP – p.43/70

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SLIDE 44

Microstructure of ball milled Al-20Mg

10 20 30 40 50 60 70 80 90 5 10 15 20 25 30 35 <x>area [nm] milling period [h] "Al-Mg-t-Xarea-spline.dat" using 1:2

(Révész et al., J. of Metast. and Nanocr. Mat., 2005)

CMWP – p.44/70

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SLIDE 45

CMWP features

supports cubic, hexagonal or orthorombic crystal system it supports (practically) unlimited number of phases the lognormal size distribution and spherical or ellipsoidal crystallite shape can be used planar faults effect (intrinsic, extrinsic faults or twins) can be inlcuded the Wilkens or the Groma-Csikor strain function can be used it supports the fitting of the contrast factor parameters

  • r individual contrast factors can be used

it is using the measured instrumental profiles directly the peak positions and intensities can be refined

CMWP – p.45/70

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SLIDE 46

CMWP features

each parameter value can be fixed, d · e can be fixed too weighting and parameter scaling is implemented it has a command line interface: evaluate which can be used interactively from a terminal window or by setting the parameter values and options in the ini files it can be automatically invoked without interaction (e.g. using it in a cycle or running it as a cron/at job) it has a graphical JAVA interface: every parameter value and option can be set in a JAVA panel and all the functions of the program can be reached it can be run using the WWW frontend: in this case only a working Web browser is needed, the input files can be uploaded to the server and the parameter values and

  • ptions can be set by the frontend

CMWP – p.46/70

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SLIDE 47

File formats

ASCII input files:

powder pattern file instrumental profiles indexing file background spline’s base points file ini files

CMWP – p.47/70

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SLIDE 48

Powder pattern file

2-column file, contains: 2Θ, I.

Example: . . . 100.7800 335 100.7950 331 100.8100 335 100.8250 331 100.8400 342 100.8550 335 . . .

CMWP – p.48/70

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SLIDE 49

Instrumental profiles

2-column files, containing: K − K0, I.

K = 2sin(Θ)

λ

K0: the K value at the peak center.

Example: . . .

  • 0.00223

0.945234

  • 0.00112

0.955681 0.985527 0.00111 0.983823 0.00222 0.97676 . . .

CMWP – p.49/70

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SLIDE 50

Indexing file

3-column file, contains: 2Θ0, IMA

X, hkl, phase.

Example: 38.2887 13826 111 44.4726 5828 200 64.6108 2544 220 77.5747 2143 311 81.7108 579 222 98.1789 205 400 110.714 566 331 115.119 488 420 . . .

CMWP – p.50/70

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SLIDE 51

Spline background

2-column file, contains: 2Θ, I.

100 200 300 400 500 600 700 800 30 40 50 60 70 80 90 Counts 2Theta spline base points interpolated spline function

Example: 30 120 40 420 60 320 65 520 70 580 93 670

CMWP – p.51/70

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SLIDE 52

The CMWP webpage

Available at:

http://www.renyi.hu/cmwp

After an easy Registration you get access to: the WWW frontend of the CMWP and MWP programs: you can evaluate online your samples, only a Web browser is needed the complete program packages: you can download and install it on your own Linux computer Documentation page: http://www.renyi.hu/cmwp/doc

CMWP – p.52/70

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SLIDE 53

The JAVA frontend of CMWP

CMWP – p.53/70

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SLIDE 54

The MKSPLINE program of CMWP

CMWP – p.54/70

slide-55
SLIDE 55

The peak indexing program of CMWP

CMWP – p.55/70

slide-56
SLIDE 56

Setting the individual C values

CMWP – p.56/70

slide-57
SLIDE 57

The WWW frontend of CMWP

CMWP – p.57/70

slide-58
SLIDE 58

The CMWP upload page

CMWP – p.58/70

slide-59
SLIDE 59

The CMWP instrumental upload page

CMWP – p.59/70

slide-60
SLIDE 60

The CMWP sample listing page

CMWP – p.60/70

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SLIDE 61

The CMWP evaluation page I.

CMWP – p.61/70

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SLIDE 62

The CMWP evaluation page II.

CMWP – p.62/70

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SLIDE 63

The CMWP evaluation page III.

CMWP – p.63/70

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SLIDE 64

The CMWP evaluation page IV.

CMWP – p.64/70

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SLIDE 65

The CMWP evaluation page V.

CMWP – p.65/70

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SLIDE 66

The CMWP evaluation page VI.

CMWP – p.66/70

slide-67
SLIDE 67

The CMWP results page

CMWP – p.67/70

slide-68
SLIDE 68

Example of a solution file

CMWP – p.68/70

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SLIDE 69

Example of a statistics file

CMWP – p.69/70

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SLIDE 70

Summary

The MWP method works on the separated profiles or their Fourier transforms and it’s a powerful method to extract microstructural parameters from X-ray peak profiles. The CMWP method works in the direct space on the whole pattern, the instrumental effect is included in the model based pattern by using convolution and therefore neither the separation of the peaks nor the deconvolution is needed. Using these methods several microstructural parameters can be determined for size, dislocations, and planar faults.

CMWP – p.70/70