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Convergence in the ERC program with Illustrations for Nanotechnology
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Convergence in the ERC program with Illustrations for Nanotechnology - - PowerPoint PPT Presentation
Convergence in the ERC program with Illustrations for Nanotechnology - - PowerPoint PPT Presentation
Convergence in the ERC program with Illustrations for Nanotechnology Farhang Shadman, Ph.D. Regents Professor of Chemical and Environmental Engineering Regents Professor of Optical Sciences Director, NSF Semiconductor Research Corporation
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Let not what you do define what you are. Rather, let what you want to become define what you do.
- John Hurt [NSF, 1997 CEBSM Review]
Opening Thought
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Early Perceptions
- f ESH Technology
- ~1995
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A Crisis and a Challenge Water May 16, 1994
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An Epiphany Win-Win Resource Management Spring 1995
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Convergence #1 NSF-SRC Partnership December 1, 1995
SRC NSF MOU
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Convergence #2 Launched a Joint ERC on Environmentally Benign Semiconductor Manufacturing [CEBSM]
High Performance and Sustainable Materials and Processes
1996
Semiconductor Technology Environment, Safety and Health High Performance & Sustainable
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NSF Semiconductor Research Corporation Engineering Research Center for Environmentally Benign Semiconductor Manufacturing Founding Leadership Team
- Prof. Farhang
Shadman, UAz Tucson
- Prof. Robert Helms,
Stanford University
- Prof. Rafael Reif,
MIT
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
University-Industry Collaborative Research
- n the ESH Aspects of SC Manufacturing
Other University members
- Arizona State U
- UCLA
- U Colorado
- Columbia
- Cornell
- Georgia Inst. of Tech.
- Johns Hopkins
- U Maryland
- U Massachusetts
- U North Carolina
- North Carolina A&T
- Purdue
- U Texas - Dallas
- Tufts
- U Utah
- U Washington
- U Wisconsin
22 years rs of
Expe perie rienc nce
Founding Universities (1996)
➢ U Arizona ➢ U California – Berkeley ➢ MIT ➢ Stanford
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
ERC Mission and Vision for ESH
ESH Impact Performance Obstacles
Upper Level Constraint Upper Level Constraint
Sustainability Triangle
Cost
- 1. Research to develop science and
technology leading to simultaneous performance improvement, cost reduction, and ESH gain 2. Incorporating ESH principles in engineering and science education 3. Promoting Design for Environment and Sustainability as a Technology Driver and not a burden
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Convergence #3 A New Culture of Stewardship 1997
Business School CEBSM Performance, Sustainability & Cost
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* ITRS ≡ International Technology Roadmap for Semiconductors
ITRS* Crises New Semiconductor Nanomaterials
Potential Toxicity and Hazards Competitive Barriers
e.g., PFOS in Photoresists
2001
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Convergence #4 Semiconductor, ESH, Business And Risk Assessment Communities, e.g., Carbon Nanotubes 2006
Biologists and Toxicologists CEBSM Performance, Sustainability, Risk Assessment & Cost
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
New ERC Thrust and Projects on Assessment of Toxicity of New Materials
➢ A major shift in the focus of the new ERC projects (2nd decade of the program, after the end of NSF funding). ➢ Emphasis on: a) new metrology methods, and b) data analysis and
- verall ESH assessment.
➢ New PIs with new expertise, including Toxicology, Environmental Science, and theoretical anf predictive methods for modeling and analysis of large /complex data sets. ➢ The early PIs in this collaborative effort included: Alex Tropsha, Rocky Draper, Paul Westerhoff, Reyes Sierra, Jim Field, Scott Boitano. ➢ Currently the major focus area of the program (fully funded by industry)
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Convergent Applications to Benefit Society More-than-Moore, e.g., Cell-based Toxicity Assays 2011
More-than- Moore CEBSM Expanded Scope
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The CEBSM Legacy Continues 1996 -
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What if? herr@src.org
Thank You
… the smallest sustainable SemiSynBio factory?
Ultra-micro-bacteria (~200 nm)
Extracted from a glacial ice core sample, 120,000 years old Miteva (2005)
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
SRC/NSF Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Multidisciplinary Research
- n
Environmental Aspects
- f
Semiconductor Manufacturing
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
University-Industry Collaborative Research
- n the ESH Aspects of SC Manufacturing
Other University members
- Arizona State U
- UCLA
- U Colorado
- Columbia
- Cornell
- Georgia Inst. of Tech.
- Johns Hopkins
- U Maryland
- U Massachusetts
- U North Carolina
- North Carolina A&T
- Purdue
- U Texas - Dallas
- Tufts
- U Utah
- U Washington
- U Wisconsin
22 years rs of
Expe perie rienc nce
Founding Universities (1996)
➢ U Arizona ➢ U California – Berkeley ➢ MIT ➢ Stanford
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
ERC Mission and Vision for ESH
ESH Impact Performance Obstacles
Upper Level Constraint Upper Level Constraint
Sustainability Triangle
Cost
- 1. Research to develop science and
technology leading to simultaneous performance improvement, cost reduction, and ESH gain 2. Incorporating ESH principles in engineering and science education 3. Promoting Design for Environment and Sustainability as a Technology Driver and not a burden
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Examples of Research Results
Greener Chemistries for Patterning: Deposition, Lithography, Etching, and Chamber Cleaning
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
1996 1997 1998 1999 2000 2001 2002 2003
Focus on identifying potential alternative chemistries (1996) PECVD chamber clean experiments (NF3 and C4F8O) (1996 – 1998) Drop-in dielectric etch replacements (hydrofluorocarbons) (1996 – 1998) More exotic dielectric etch replacements (iodofluorocarbons) (1997 – 1999) Decouple C and F (NF3/hydrocarbon) (1999 – 2001) Unsaturated molecules for dielectric etch (UFC) (1999 – 2002) Future generation processes (Deep-submicron low-k & ultra low-k) (2001 – 2003)
Silicon Oxide Etch
Low-k Etch
Post-CVD Chamber Clean Several novel chemistries, developed by ERC were adopted and used by industry
Early ERC Projects on PFC Alternatives
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MIT-Stanford- UC Berkeley teams
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing Sugar based “Sweet” PAG Natural molecules based Biocompatible/ Biodegradable PAG
Hydrophilic Hydrophobic Aromatic Aliphatic Polar Nonpolar Linear branch ring
1st & 2nd Generation 3rd Generation
Environmentally Friendly PAGs
PFOS-Free alternatives
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By Ober
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Computer-Aided Process Simulation Examples of Development and Application
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Water and Energy Use Reduction
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Lowering Water Usage
➢ Surface preparation is the largest user of UPW ➢ Conventional processes are typically based on recipes that use large excess cleaning, with no on- line monitoring ➢ Critical need: Real-time and on-line monitoring for detection of cleaning end-point
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Mechanism Time Scale Flow Effect Boundary Diffusion d2/D ~ 10 s Indirect, mild Convection d/u ~ 1-3 s Direct, strong Desorption 1/kd ~ 0 - 105 s No effect
Desorption Convection/ Diffusion Convection Desorption Convection
Cleaning of Nano-Structures
Lowering water and energy usage Better metrology and process control Needs:
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By Helms- Shadman
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Novel Electro-Chemical Residue Sensor (ECRS)
Solution (pH) (ppt) UPW (pH=7) HCl(pH=6) HCl (pH=5) 18 5 2.3 30 0.23 400 Resolution Resistivity (MΩ)
KEY FEATURES:
- Real Time
- In-situ
- Online
- High Sensitivity
- Non-destructive
- Quick Response
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By Shadman
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Convection Diffusion
wafer water
Extent of Cleaning Time
Diffusion
wafer water
Desorption
Dominant Operation Parameters:
- Temperature
- Time
- Water Purity
- Additives
Dominant Operation Parameters:
- Flow
- Mixing
Purge Transition Final Surface Cleaning
Dynamics of Cleaning and Rinsing Processes
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By Helms- Shadman
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Novel Staged Rinsing Methods
Post SC-1 Rinsing
- Savings:
- ~ 25% cold water
- ~ 80% hot water
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By Zhao
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
➢ Conventional purge or vacuum:
- Extra equipment and pipelines
(costly)
- Back streaming into the supply line
during evacuation ➢ Proposed PCP
- No evacuation
- Pressure-induced flow to assist purge
- Purge enhancement by the fluid
mechanic resonance of the system
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Reducing UHP Gas Usage
Pressure-Cyclic Purge (PCP)
Evacuation Back Streaming Induced Pressure Cycle
Customized project by Intel
By Shadman
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Purging of Complex Distribution Systems
By Shadman
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
PCP Results and Model Verification
Purge time (min) Purge gas usage (sl) SSP w/o lateral 425 850 SSP w/ lateral 1760 3520 SSP-PCP-SSP w/ lateral 1065 2070
By Shadman
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
EP SS pipe with 1.5 inch OD and 76 inch length. Initial conc. 90 ppb
PCP for Reducing the UHP Gas Usage
Moisture Conc. at Pipe Outlet, Cg ((ppb) Purge Time, t (min)
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 30 40 50 60 70 80 90 100 110 120 130 140
1
1: Conventional purge 2: Cyclic purge
To reach 1 ppb baseline: conventional purge takes 80 minutes; cyclic purge takes 45 minutes (40% less purge gas)
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By Shadman
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Examples of Research Results
Alternate Low-Energy Deposition
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Pyrolytic CVD
Solventless Low-Energy Deposition
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By Gleason
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Examples of Research Results
ESH and Process Gains in Chemical Mechanical Planarization (CMP)
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Layered Structures of Advanced Devices
source Spacer Gate oxide Poly-silicon gate Isolation Drain Silicon Tungsten plug Copper lines Copper plug Inter-layer dielectric 130 nm Six Cu layer 180 nm Six Al layers 250 nm Five Al layers 90 nm Seven Cu layers 65 nm Eight Cu layers
By Philipossian- Boning
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Chemical Mechanical Planarization (CMP)
Slurry 45% Equipment 22% Labor 8% Other 9% Pad 16% Slurry 45% Equipment 22% Labor 8% Other 9% Pad 16%
Total slurry input Amount of slurry that never reaches the wafer Amount of slurry that reaches the wafer but does not get underneath
Amount of slurry that does the actual polishing is often less than 10%
- Fastest growing process segment
- Major source of nano particle emission in S/C
fabs.
- Costly and wasteful operation: For a typical
200-mm factory: – 6,000,000 liters of slurry ($20M) per year – 300 metric tons of solid waste per year CMP Cost
By Philipossian- Boning
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
CMP Waste Reduction
Novel Pad Design and Rheology Optimization
Joint projects with Sematech, Intel, IBM, Fujimi, Hitachi Chemicals, Arkema, and Cabot.
By Philipossian
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Examples of Research Results
ESH Challenges of Nano-Particles Used in Semiconductor Manufacturing
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
ESH Impact and Risk
Introduction of New Materials
Time Number
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Introduction of New Materials
Time Complexity
Si, SiO2 Al, SC1 SC2 Compound S/C Complex dielectrics Bio-nano electronics New waste issues Organo-metallic precursors
ESH Impact and Risk
Complex PRs and PFOS replacement
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Introduction of New Materials
Time Number Complexity
Si SiO2 Al SC1 SC2 Compound S/C Bio-nano electronics Complex dielectrics New waste issues Organo-metallic precursors
Potential ESH Impact
Complex PRs and PFOS replacement
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Challenges of New Materials Impact Assessment and Mitigation
➢ Large number of new chemicals enter the manufacturing
- f semiconductor and other high-tech devices.
➢ ESH study of one material costs over $5M and takes at least 6 years. ➢ The time scale of IC technology node is about 3-5 years. ➢ Solution: Critical need for powerful rapid ESH assessment techniques; some experimental but many based on molecular modeling to predict ESH effects and to design green alternatives.
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Examples of New Materials with ESH Issues
Strontium bismuth tantalate (SrBi2Ta2O9) high thermal budget Lead zirconium titanate (PbZrTiO3) low thermal budget Material Stable with Si k Value Tantalum pentoxide (Ta2O5) no (forms SiO2) k ~ 25 Strontium titanate (SrTiO3) no (e.g. Pt electrodes) k ~ 150 Barium strontium titanate (BaSrTiO3) no (e.g. Pt electrodes) k ~ 300
High-k Dielectrics for DRAM Ferroelectric Dielectrics for Nonvolatile Memory (FeRAM)
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
What is Unique About Nano-Particles?
- Nano-particles cannot be effectively removed
by agglomeration, settling, and filtration; they also clog membranes.
- Active surface
- Selective adsorption
- Pore trapping (Kelvin Effect)
Treatment problem:
Shell Adsorbed contaminants
Core
- Concentration
- Facilitated transport
- Enhanced life-time
Consequence Synergistic ESH impact of nano-particles:
Surface Active Sites
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
- Environ. Sci. Technol. 2001, 35, 1339.
- Environ. Health Perspect. 2005, 113, 539.
Global Distribution of PFOS in Wildlife
- PFOS banned for most application is the US and EU.
- PFOS listed as chemical for regulation within the Stockholm
Convention on Persistent Organic Pollutants (POPs)
- EPA Provisional Health Advisory Levels for PFOS 200 ng L-1
Example: Challenge of Replacing PFOS
PFOS in human blood PFOS in drinking water
PFOS and other PFCs detected in drinking water resources worldwide By Ober-Sierra
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
New ERC Thrust and Projects on Assessment of Toxicity of New Materials
➢ A major shift in the focus of the new ERC projects (2nd decade of the program, after the end of NSF funding). ➢ Emphasis on: a) new metrology methods, and b) data analysis and
- verall ESH assessment.
➢ New PIs with new expertise, including Toxicology, Environmental Science, and theoretical anf predictive methods for modeling and analysis of large /complex data sets. ➢ The early PIs in this collaborative effort included: Alex Tropsha, Rocky Draper, Paul Westerhoff, Reyes Sierra, Jim Field, Scott Boitano. ➢ Currently the major focus area of the program (fully funded by industry)
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Toxicity Mechanisms
Attach achment nt
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By Field, Sierra, Boitano
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing aliphatic or aryl unit perfluorinated unit acid size, miscibility, thermal stability, absorption, outgassing. acid strength, absorption photosensitivity, absorption, thermal stability. acid head chromophore
Sugar based “Sweet” PAG Natural molecules Biocompatible/ Biodegradable PAG Hydrophilic Hydrophobic Aromatic Aliphatic Polar Nonpolar Linear branch ring
Molecular Design of PFOS-Free PAGS
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By Ober
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Mining Oil & Gas Chem/Petrochem Pharmaceutical Electronics Semiconductor Petroleum Refining
0% 100%
Product Feed Material
Nano-Technology
?
Material Usage Index in Various Industries
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
ESH Issues Precursors, HAPs, wastes VOCs, radiation VOCs, waste VOCs, HAPs HAPs, PFCs A/B chemicals, solvents A/B chemicals, UPW
Conventional Lithography
development spin-on imaging layer Dielectric deposition Selective irradiation Dielectric patterning Imaging layer strip Resist strip
A Paradigm Change in Manufacturing:
Deposition and Patterning of Dielectrics
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By Gleason
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
Conventional Lithography
development in aqueous base spin-on imaging layer dielectric deposition selective irradiation dielectric patterning imaging layer strip resist strip
All-Dry, Resistless Lithography VS. CVD of patternable dielectric layer selective irradiation development in supercritical CO2 wet chemistry eliminated wet chemistry eliminated step eliminated step eliminated
Deposition and Patterning of Dielectrics
Karen Gleason (MIT), Chris Ober (Cornell)
By Gleason
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
All-Dry, Resistless Lithography
development in aqueous base spin-on imaging layer dielectric deposition selective irradiation dielectric patterning imaging layer strip
Conventional Lithography wet chemistry eliminated (CVD) wet chemistry eliminated (supercritical CO2)
Photo initiated CVD
Selective Dielectric Deposition
ESH Gain
Process Gain
win/win
Cost Reduction
Deposition and Patterning of Dielectrics
Karen Gleason (MIT), Chris Ober (Cornell)
By Gleason
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SRC Engineering Research Center for Environmentally Benign Semiconductor Manufacturing
a) Clean and Pattern Si b) Protect SiO2 c) Activate Si d, e) Maskless selective ALD of high-k dielectric
H H OH OH OH OH SiO
2
SiO
2
Si H H O O Si R Si R O O Si R Si R
RSiCl
3
SiO
2
SiO
2
Si O O Si R Si R O O Si R Si R
Cl
2
(a) (b) (c)
SiO
2
SiO
2
Si SiO
2
SiO
2
Si
HF followed by H2O
H H OH OH OH OH SiO
2
SiO
2
Si SiO
2
SiO
2
Si H H O O Si R Si R Si R Si R O O Si R Si R O O Si R O O Si R Si R
RSiCl
3
O O Si R Si R O O Si R Si R SiO
2
SiO
2
Si SiO
2
SiO
2
Si Cl Cl O O Si R Si R Si R Si R O O Si R Si R O O Si R O O Si R Si R
Cl
2
(a) (b) (c) SiO
2
SiO
2
Si OH OH O O Si R Si R O O Si R Si R
H
2O
HfCl
4
Si R Si R SiO
2
SiO
2
Si O O O O O O Si R Si R Hf Hf Cl3 Cl3
(d) (e)
SiO
2
SiO
2
Si SiO
2
SiO
2
Si O O Si R Si R Si R Si R O O Si R Si R O O Si R O O Si R Si R
H
2O
HfCl
4
Si R Si R O O O O O O Si R Si R Hf Hf Cl3 Cl3 Si R Si R Si R Si R SiO
2
SiO
2
Si O O O O O O Si R Si R Hf Hf Cl3 Cl3 SiO
2
SiO
2
Si SiO
2
SiO
2
Si O O O O O O Si R Si R O O Si R O O Si R Si R Hf Hf Cl3 Cl3
(d) (e)
Example: Additive Deposition of HfO2
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By Muscat