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Complete suppression of reverse annealing in neutron irradiated MCZ Si detectors during gamma irradiation Z. Li, W. Chen, R. Gul, J. Kierstead Brookhaven National laboratory, USA E. Verbitskaya, V. Eremin Ioffe Physical-Technical Institute of

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  • Z. Li, W. Chen, R. Gul, J. Kierstead

Brookhaven National laboratory, USA

  • E. Verbitskaya, V. Eremin

Ioffe Physical-Technical Institute of Russian Academy of Sciences

  • St. Petersburg, Russia
  • J. Härkönen

Helsinki Institute of Physics, Finland

  • M. Hoeferkamp, J. Metcalfe, S. Seidel

University of New Mexico, Albuquerque, USA

8th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detectors, Taipei, Taiwan; Sunday 04 December 2011 - Thursday 08 December 2011

Complete suppression

  • f reverse annealing in neutron irradiated

MCZ Si detectors during gamma irradiation

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Outline

  • Background
  • Experimental
  • I-V characteristics
  • Current pulse response
  • Reverse annealing suppression by gamma

Conclusions

  • Z. Li et al., 8th International "Hiroshima" Symposium on the Development and Application of

Semiconductor Tracking Detectors, Taipei, Taiwan; 12/04-08/2011

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Background

Goal of the study Develop radiation hard Si detector that can utilize mixed irradiation in ILC: gamma + electrons + neutrons Task ⇒ compensation of donor-type and acceptor-type defects

The task of mixed irradiation is also important for LHC

  • Z. Li et al., 8th International "Hiroshima" Symposium on the Development and Application of

Semiconductor Tracking Detectors, Taipei, Taiwan; 12/04-08/2011

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Experimental

Samples: p+-n-n+ Si detectors processed in BNL n-type MCZ Si, ρ ~ 1 k, d = 390 µm Characterization (all done at BNL):  I-V, C-V  TCT with red laser  I-DLTS with infrared laser filling

  • Z. Li et al., 8th International "Hiroshima" Symposium on the Development and Application of

Semiconductor Tracking Detectors, Taipei, Taiwan; 12/04-08/2011

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n

RTA + γ on two det.

1 2 3

RTA

22 days 5.5 month 36.5 month time Neutrons: Research Reactor in Sandia National Lab, 0.8-1 MeV, Hardness Factor is 1.3), Fn up to 3x1014 neq/cm2 Gamma: BNL’s 60Co Radiation facility (1.25 MeV), to a total dose of 500 Mrad

Sample # 1480-13 1480-5 1480-14 1480-16 1st irradiation, neq/cm2 1.5x1014 1.5x1014 3x1014 3x1014 2nd irradiation, gamma (Mrad) 500 500

Irradiation and annealing

  • Z. Li et al., 8th International "Hiroshima" Symposium on the Development and Application of

Semiconductor Tracking Detectors, Taipei, Taiwan; 12/04-08/2011

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I-V characteristics: influence of gamma

1 10 100 10-6 10-5 10-4 10-3

current (A) bias voltage (V)

22 days 5.5 m 12 m

1480-5

1 10 100 10-6 10-5 10-4 10-3

current (A) bias voltage (V)

22 days 5.5 m 12 m

1480-13

#1480-5: I-V did not change during gamma irradiation RTA only Gamma during 5.5 month

  • Z. Li et al., 8th International "Hiroshima" Symposium on the Development and Application of

Semiconductor Tracking Detectors, Taipei, Taiwan; 12/04-08/2011

36.5 m 36.5 m

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#798-89, 5k, 400um, p+ side, 80 V, 1.19E13p/cm2, 200MeV, 4d RTA

0.005 0.01 0.015 0.02 0.025 4.0E-08 5.0E-08 6.0E-08 7.0E-08 8.0E-08 9.0E-08 1.0E-07 Time (s) i (uA)

#798-89, 5k, 400um, n+ side, 80 V, 1.19E13p/cm2, 200MeV, 4d RTA

0.002 0.004 0.006 0.008 0.01 0.0E+00 5.0E-08 1.0E-07 1.5E-07 2.0E-07 2.5E-07

Time (s) i (uA)

Laser illumination on the Ohmic side (n+-side) Laser illumination on the junction side (p+-side)

n+ p+ n e

Red laser 5 um absorption in Si

p+ n+ n h

Red laser 5 um absorption in Si

Red laser induced current shapes follow the shape of E-field

TCT: Transient Current Technique

E E

Before radiation Before radiation

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Current pulse response

90 V 140 V 187 V 237 V 384 V

90 V 140 V 187 V 237 V 286 V Vfd from C-V

p+ n+ p+ n+

  • SC (SCSI)/DJ

RTA 22 days (1st interval, end)

electrons Vfd = 187 V

168 V 286 V 315 V 354 V 412 V

Electron transient Vfd

After RT reverse anneal

holes

RTA, 5.5 m (2nd int., end) Neutrons only # 1480-13, Fn = 1.5x1014 cm-2

  • Z. Li et al., 8th International "Hiroshima" Symposium on the Development and Application of

Semiconductor Tracking Detectors, Taipei, Taiwan; 12/04-08/2011

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138 V 148 V 158 V 167 V 177 V Vfd from C-V

Before gamma and RT reverse anneal

Current pulse response: impact of gamma

5.5 m RTA + gamma: 2nd int., end

91 V 130 V 140 V 160 V Vfd(CV)

After gamma and RT reverse anneal

#1480-5, 1.5x1014 n/cm2 + 500 Mrad (lower Fn) Just after neutrons (1st int., end) Pulse shapes and Vfd are similar

  • Z. Li et al., 8th International "Hiroshima" Symposium on the Development and Application of

Semiconductor Tracking Detectors, Taipei, Taiwan; 12/04-08/2011

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460 V 508 V 554 V 600 V 645 V Vfd

Before gamma and RT reverse anneal

Current pulse response: impact of gamma

#1480-16, 3x1014 cm-2 + 500 Mrad (higher Fn) Pulse shapes and Vfd are also similar

Laser front, electron current from p

+ to n+

Double junction, and SCSI seen 1480-16, 3x1014 n/cm2 +500 Mrad gamma (5.5 month RT anneal), MCZ n-type Si, p+/n/n+ structure

460 V 508 V 554 V 600 V 645 V Vfd

After gamma and RT reverse anneal

RTA 5.5 m

  • Z. Li et al., 8th International "Hiroshima" Symposium on the Development and Application of

Semiconductor Tracking Detectors, Taipei, Taiwan; 12/04-08/2011

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Current pulse response: 36.5 month RTA

3rd interval, end, RTA 36.5 months

0.005 0.01 0.015

  • 10

10 20 30 40 50 60 70 80

time (ns ) s ig nal (V)

431 V 568 V 640 V 675 V 742 V

1480-13

0.02 0.04 0.06

  • 10

10 20 30 40

time (ns) signal (V)

307 V 365 V 402 V 460 V 618 V

1480-5

DP pulse shape arises at lower V in detector irradiated by gamma and is more pronounced

Lower Fn

0.2 0.4 0.6 0.8 1 1.2 200 400 600 800 1000

bias v oltag e (V) Q normalized (arb. units )

1480-13; 1.4e14 n/cm2 1480-5; 1.5e14 n/cm2 + 500 Mrd

  • Z. Li et al., 8th International "Hiroshima" Symposium on the Development and Application of

Semiconductor Tracking Detectors, Taipei, Taiwan; 12/04-08/2011

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Current pulse response and collected charge:

36.5 month RTA

Higher Fn

Collected charge

3rd interval, end

0.E +00 1.E -10 2.E -10 3.E -10 4.E -10 5.E -10 6.E -10 200 400 600 800 1000

bias voltage (V) collected charge (Vs)

1480-13, 1.5e14 n/cm2 1480-5, 1.5e14 n/cm2 + 500 Mrd 1480-14, 3e14 n/cm2 1480-16, 3e14 n/cm2 + 500 Mrd

gamma

0.002 0.004 0.006 0.008 0.01

  • 10

10 20 30 40 50 60

time (ns) signal (V)

566 V 702 V 787 V 810 V 862 V

1480-16

DP and full depletion only in detector # 1480-16 irradiated by gamma whereas for # 1480-14 (no gamma) from p+ side only small electron pulses In detectors irradiated by gamma:  Q saturation  lower Vfd

  • Z. Li et al., 8th International "Hiroshima" Symposium on the Development and Application of

Semiconductor Tracking Detectors, Taipei, Taiwan; 12/04-08/2011

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Evolution of Vfd and Neff vs. RTA

Fn (neq/cm2) γ-dose after neutron irradiation during 5.5 m RTA (Mrad) Changes in Neff during 5.5 m RTA (cm-3) Reverse annealing suppression +SC would have been generated with gamma- radiation alone 1.5x1014 500 +0.1x1012 completely +1.5x1012 3x1014 500 ~0 completely +1.5x1012 1.5x1014

  • 1.8x1012

no 3x1014

  • 4.7x1012

no

Reverse anneal resumes even in gamma-irradiated detectors when gamma irrd. stops

  • Z. Li et al., 8th International "Hiroshima" Symposium on the Development and Application of

Semiconductor Tracking Detectors, Taipei, Taiwan; 12/04-08/2011

Reverse anneal resumes with similar rate Reverse anneal suppression

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I-DLTS spectra

RTA 5.5 months 1480-13, only neutrons 1480-5, neutrons + gamma 100 K: A-center 200-300 K: V-- + cluster defects 5.5 m RTA: 1480-13 P100/P300 = 0.36 1480-5 P100/P300 = 0.87

  • Z. Li et al., 8th International "Hiroshima" Symposium on the Development and Application of

Semiconductor Tracking Detectors, Taipei, Taiwan; 12/04-08/2011

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Conclusions

In mixed irradiation neutrons + gamma:

  • Complete suppression of reverse annealing occurs only

during gamma irradiation, and disappears when gamma stops, and reverse anneal resumes with similar rate

  • 2. Suppression is independent on applied Fn
  • 3. Interaction of different defects?
  • 4. DP/DJ effects are observed also for mixed irradiation
  • Z. Li et al., 8th International "Hiroshima" Symposium on the Development and Application of

Semiconductor Tracking Detectors, Taipei, Taiwan; 12/04-08/2011

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This work was made in the framework of RD50 collaboration and supported in part by:

  • U.S. Department of Energy, Contract No. DE-AC02 -98CH10886,
  • Fundamental Program of Russian Academy of Sciences
  • n collaboration with CERN,
  • RF President Grant # SS-3306.2010.2

Acknowledgments

Thank you for attention!

  • Z. Li et al., 8th International "Hiroshima" Symposium on the Development and Application of

Semiconductor Tracking Detectors, Taipei, Taiwan; 12/04-08/2011