ASIC Research and Development at Fermilab R. Yarema April 20, 2005 - - PowerPoint PPT Presentation

asic research and development at fermilab
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ASIC Research and Development at Fermilab R. Yarema April 20, 2005 - - PowerPoint PPT Presentation

ASIC Research and Development at Fermilab R. Yarema April 20, 2005 Main areas ASIC R&D happening in EED of PPD where we have capabilities and experience in several diverse areas. ASIC design at many silicon foundries TSMC


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SLIDE 1

ASIC Research and Development at Fermilab

  • R. Yarema

April 20, 2005

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SLIDE 2

April 20-22, 2005 Super B Factory in Hawaii 2

Main areas

  • ASIC R&D happening in EED of PPD where we have

capabilities and experience in several diverse areas.

  • ASIC design at many silicon foundries

– TSMC – IBM – AMS – Agilent – Atmel

  • ASIC in-house testing

– Wafer level testing – Packaged parts testing

  • Board level design
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SLIDE 3

April 20-22, 2005 Super B Factory in Hawaii 3

Current Activities

  • 9 ASICs currently in design, fabrication, or under test.

– Readout chip for Resistive Plate Chambers (RPCs) and Gaseous Electron Multipliers (GEMS) – Readout chip for Avalanche Photo Diodes (APDs) – Readout chip for Visible light Photon Counters (VLPCs) – Readout chip for Photomultiplier Tubes (PMTs) – Controller chip for Cockcroft Walton power sources – TDC for straw detectors – Readout chip for pixel detectors – Readout chip for silicon strip detectors – Evaluation chip for 0.13 micron CMOS process

  • Discuss each device briefly to give over view of design

capabilities - perhaps find new device for your experiment.

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SLIDE 4

April 20-22, 2005 Super B Factory in Hawaii 4

DCAL chip

  • Digital hadron calorimeter readout chip for

CALICE collaboration

  • Designed for Fermilab test beam to prove digital

calorimeter concept.

  • 1 m3, 400,000 channel detector
  • Chip designed to operate with RPCs and GEMs
  • RPCs used many places (Belle, etc.) GEMs are

relatively new.

  • Design to be refined for ILC beam structure at a

later time.

  • Chip is in fabrication (TSMC 0.25 micron CMOS)
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SLIDE 5

April 20-22, 2005 Super B Factory in Hawaii 5

DCAL Specifications

  • 64 channels/chip
  • 1 cm x 1 cm pads
  • Detector capacitance, 10 to 100 pf
  • Smallest input signal, 100 fC (RPCs), 5 fC (GEMs)
  • Largest input signal, 10 pC (RPCs), 100 fC (GEMs)
  • Chip has adjustable gain for RPCs and GEMs.
  • Signal pulse width, 3-5 nsec
  • Trigger less or triggered operation
  • 100 nsec clock cycle
  • Serial output data – hit pattern

and time stamp

RPC

  • r

GEM Array DCAL DCAL DCAL 64 Serial Data Output

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SLIDE 6

April 20-22, 2005 Super B Factory in Hawaii 6 Mask Register Hit Catchers In 0 * * * In 31 In 30 In 29 Mask Register Hit Catchers In 63 * * * In 32 In 33 In 34 TimeStamp (24 bit)

32 bit by 20 stage Pipeline 24 bit by 20 stage Pipeline 32 bit by 20 stage Pipeline

Internal/ External Trigger Control 8 Stage FIFO Steering Logic (a.k.a. Frame Maker) Serializer DataOut ClkOut

32 11 2 Load Done Int Ext Int Ext Ext Int

Tmode Ext TRIG Int TRIGOUT

24 32

Readout Clk Clk Slow Control timeReset Programmable Resets Serial IO

88 Qin Vth Dia Data Mask Mask Dia Data Vth Qin

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SLIDE 7

April 20-22, 2005 Super B Factory in Hawaii 7

DCAL Layout

32 inputs 32 inputs 88 x 20 pipeline

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SLIDE 8

April 20-22, 2005 Super B Factory in Hawaii 8

Avalanche Photo Diode Readout Chip

  • Chip designed to readout APDs in the proposed NOvA

(Neutrino off axis) experiment at Fermilab.

  • Design based on previous FNAL chips: SVX4, MASDAX.
  • Chip is designed for in–spill data taking from Fermilab

neutrino beam and for trigger less operation to search for supernova events and to collect cosmic ray data.

  • Low noise operation is one of the major problem.
  • Chip design is complete in TSMC 0.25 micron mixed

signal CMOS

  • Layout is in progress.
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SLIDE 9

April 20-22, 2005 Super B Factory in Hawaii 9

APD ROC Specifications

  • 32 channels/chip
  • APD is run at 400 V to give a gain of 100 and provide

signals of 2500 e (min) to the APD readout chip.

  • Detector capacitance = 10-15 pF
  • Noise of readout chip = 200 erms max at 10 pF.
  • First stage: high gain preamplifier with a shaping time of

about 350 nsec.

  • 64 stage switched capacitor array clocked at 500 nsec.
  • Double correlated samples to reduce noise (various options)
  • 10 bit Wilkinson ADC with linear or pseudo-log ramp
  • Triggered or trigger less mode
  • 10 bit serial-parallel output data format

32 APDs

Thermoelectric cooler at –15 0C

APD ROC

32 10

Fibers

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SLIDE 10

April 20-22, 2005 Super B Factory in Hawaii 10

10 CK D 10 Shift Register 10 10

GAIN RISE TIME FE RST FE RST

INTEGRATOR SHAPER SAMPLING PIPELINE RING (64 deep) READ AMP ADC COMPARATOR ADC COUNT LATCH 10-BIT GRAY COUNTER

APD READOUT CHIP

IN RAMP GEN. CONTROL LOGIC

Vref

RING CK RAMP CNTL

(One channel of 32 shown)

GRAY CK Write Read CHIP RESET MODE SET

Control Section

Next Chan.

DATA OUT 10

Previous Chan.

Pipeline modes:

  • 1. Triggered

(Write - Stop - Read)

  • 2. Continuous

(no deadtime) Front end reset modes:

  • 1. Switched
  • 2. Continuous

Digitize modes:

  • 1. Cell only (0, 1, ...)
  • 2. DCS (1-0, 2-1, ...)
  • 3. DCS every other

(2-0, 3-1, ...) Ramp modes:

  • 1. Linear
  • 2. Pseudo-log

Ramp Count OUT CK DATA OUT format example: Cell only digitize mode (10-bit DATA words) Data Out, Cell 0 Data Out, Cell 1 Data Out, Cell 63 OUT CK

  • Ch. 0
  • Ch. 1
  • Ch. 2
  • Ch. 31
  • Ch. 0
  • Ch. 1
  • Ch. 2
  • Ch. 31
  • Ch. 0
  • Ch. 1
  • Ch. 2
  • Ch. 31

Digitize Cell 1 Digitize Cell 2 63

Cell 0 1

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SLIDE 11

April 20-22, 2005 Super B Factory in Hawaii 11

TRIP-T

  • The TRIP-T chip is a multi-channel front-end chip that has a

preamplifier, a fast trigger output, and an analog pipeline for the VLPC based central scintillating fiber tracker and pre- shower detectors at Dzero.

  • Performs 3 functions

– Detect and send hit information to trigger system every beam crossing. – Store analog signal level in pipeline for readout and digitization later. – Store arrival time of hit within within 100 nsec integration window for readout and digitization later.

  • The chip is expected to also be used by the proposed Minerva

neutrino experiment.

  • Chip is designed and layout is finished.
  • To be submitted about May 15 to TSMC 0.25 micron CMOS

process.

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SLIDE 12

April 20-22, 2005 Super B Factory in Hawaii 12

TRIP-T Specifications

  • 32 channels per chip

– 32 discriminator outputs

  • Multiplex 32 signals to 16 output lines each clock cycle

– 46 cell deep, analog pipeline; read out after trigger

  • Pipelined amplitude output to ADC
  • Pipelined time to voltage converter output to ADC

– To provide 2 nsec resolution

  • 396 nsec clock with 100 nsec signal integration
  • Chip-wide programmable gain, and discriminator threshold control
  • Input signal range:

– 4 fC – 150 fC (high gain)

– 1890 fC max (low gain)

  • Analog ENC: < 1 fC rms.
  • Detector capacitance: 35 pF

8 VLPCs 8 VLPCs 8 VLPCs 8 VLPCs

TRIP-T

16 1 1 Amplitude Hit time (analog) Discriminator

  • utputs

Cryostat at 9 0K

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SLIDE 13

April 20-22, 2005 Super B Factory in Hawaii 13

TRIP-T Block diagram

Integrator Variable Gain

Time to Voltage Converter

Disc. Amplitude out V(time) Test 1 of 32 channels Amplitude Pipeline 32 channels x 46 Time Pipeline 32 channels x 46 34 Analog Mux 34 1 1 34 34 32 Digital Mux 16 Discriminator

  • utput (single

ended CMOS) Amplitude

  • utput (P. D.)

Timing

  • utput (P. D.)

Slow control interface Analog Mux 32 Program in Program out Vth Dummy Channel Qin Disc out T-V output Time to Voltage Converter Dummy Channel Pipeline controller

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SLIDE 14

April 20-22, 2005 Super B Factory in Hawaii 14

TRIP-T Chip

Integrators And discriminators Analog Pipeline Programming DACs Slow Control

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SLIDE 15

April 20-22, 2005 Super B Factory in Hawaii 15

QIE9 (Charge Integrator and Encoder)

  • QIE9 is the latest chip in a series of chips designed for several

experiments: KTEV, CDF, CMS, MINOS, and BTEV. Devices designed for different signal ranges and speed.

  • Device is used for digitizing signals that cover a wide dynamic

range (16 bits) but need only limited resolution (8 bits).

  • The QIE9 accepts charge from a PMT, splits the charge with a

current splitter, integrates the charge on 8 binary weighted, parallel ranges, then digitizes the signal from the range of interest and outputs the input charge value as a modified floating point number. Data is processed internally in 3 stage pipeline.

  • Prototyped in AMS 0.8 micron BiCMOS. Ready for

production. PMT QIE9 3 bit exponent 8 bit mantissa

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SLIDE 16

April 20-22, 2005 Super B Factory in Hawaii 16

QIE 9 Specifications

<0.2% (for .2 pC inputs) Resolution (relative error) < 1 LSB ADC INL << 1 LSB ADC DNL < 5 fC Input noise charge (5 m cable) 50 ohms Input impedance > 20 MHz Analog signal BW 132 ns Gated integration period 300 pC Max input charge 5 fC Least count charge

Typical modified floating-point charge transfer characteristic.

MANTISSA

Q

Q Q Q A (Q )

2

A (Q )

R = 2 R = 1 R = 0

in

(A = Range Scaling Factor)

R = 3 1 2

(R = Range # = Exponent)

Relative error plots for (a) standard and (b) modified floating point.

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SLIDE 17

April 20-22, 2005 Super B Factory in Hawaii 17

QIE9 Block Diagram

R e c e i v e r - S p l it t er

S IG

16/34 Is 8/34 Is 4/34 Is 2/34 Is 8

Is Is

1/34 Is 1/34 Is 1/34 Is 1/34 Is

P h a s e 2 I n t e g r a t e , R a n g e S e l .

Ir Is

8 8

IN T 2 R S T _ C A P 2 R S T _ C O M P 2 E X P 2 S I G 2 R E F2

EXPONENT 16/34 Ir 8/34 Ir 4/34 Ir 2/34 Ir 8

Ir Ir

1/34 Ir 1/34 Ir 1/34 Ir 1/34 Ir

R e c e i v e r - S p l i t t e r

R E F

P h a s e 0 I n t e g r a t e , R a n g e S e l .

Ir Is

8 8

IN T 0 R S T _ C A P 0 R S T _ C O M P 0 E X P 0 S I G 0 R E F0

P h a s e 1 I n t e g r a t e , R a n g e S e l .

Ir Is

8 8

IN T 1 R S T _ C A P 1 R S T _ C O M P 1 E X P 1 S I G 1 R E F1

INT 0- 2 RST_CAP 0-2 RST_COMP 0-2 MUX CONTROL

T IM IN G G E N E R AT O R

CAP_ID

2

3 to 1 D i g i ta l M u x

E X P 0 - 2

3 t o 1 A n a l o g M u x

S I G 0 - 2

3 t o 1 A n a l o g M u x

R E F0 - 2

3 Q IE C lo c k R e se t

MANTISSA

FADC 8 OUTPUT SERIALIZER O u t D a ta C lo c k

Signal input Reference input

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SLIDE 18

April 20-22, 2005 Super B Factory in Hawaii 18

QIE9 Chip

Input Receiver/ splitter Integrators 8 bit ADC Range select

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SLIDE 19

April 20-22, 2005 Super B Factory in Hawaii 19

Resonant Mode Converter Controller (RMCC)

  • Controller chip for Cockcroft-Walton type of high voltage supply.
  • Power source for high voltage, low current detectors such as PMTs,

pixel and strip detectors, APDs, etc.

  • Advantages

– Highly programmable – 12 bit ADC read back – Integrate power near detector – No H. V. connectors – Relatively low cost

  • Prototype received

– AMI 0.5 micron CMOS

  • Testing 4 channel board

PMT QIE9 RMCC With HV components HV Control and read back

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April 20-22, 2005 Super B Factory in Hawaii 20

Cockcroft Walton Converter using RMCC

+ ref

  • ref

+ Output polarity VR

  • +
  • +

VCO 12 bit ADC Mux Serial data I/O 12 bit DAC Reference +

  • Temperature

Monitor External input 12 Slow Control Control lines Driver control High Voltage Capacitor and Diode Multiplier Load High voltage resistor divider L C Error Amplifier

RMCC

Bandgap reference

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SLIDE 21

April 20-22, 2005 Super B Factory in Hawaii 21

RMCC

Serial I/O 12 bit DAC 12 bit ADC High current Output drivers Amplifiers

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SLIDE 22

April 20-22, 2005 Super B Factory in Hawaii 22

Multi-channel TDC

  • Intended for use with straw detectors
  • TDC features:

– Radiation tolerant (TSMC 0.25 micron CMOS) – 48 channels – Serial CMOS output

  • To be tailored for application

– 1.65 nsec resolution – Min. input PW = 10 nsec – On chip DAC reference for ASDQ chip

  • Chip under test

– Appears functional

8ch ASDQ 8ch ASDQ 8ch ASDQ 8ch ASDQ 8ch ASDQ 8ch ASDQ 48 Straw Wires 48 Channel TDC Ref 24 24 1

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SLIDE 23

April 20-22, 2005 Super B Factory in Hawaii 23

Multi-channel TDC Block Diagram

TDC Core Counter Channel 1 Channel 2 Channel 48 Start TDC 48 Inputs Shift Register (Ch 1-48) (Output to be tailored to application) Clk 1 X80 clock multiplier Phase Lock Loop Lock detector 132 nsec reference clock 1.65 nsec clock 1 Serial

  • utput

Parallel output for channel 1 only 8 Bandgap reference DAC input 8 8 bit DAC To ASDQs 1 1 384

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SLIDE 24

April 20-22, 2005 Super B Factory in Hawaii 24

TDC Chip

48 TDC channels Output Shift Register Phase lock loop 8 bit DAC

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April 20-22, 2005 Super B Factory in Hawaii 25

FPIX2

  • Pixel readout chip designed for the proposed

BTEV experiment.

  • May be used in Phenix upgrade at BNL
  • Other applications being considered
  • Design work complete

– Final production version to be submitted about May 15

16896 pixel detector 6 FIX2 chips bump bonded to detector I/O to FPIX chips

FPIX2 FPIX2 FPIX2 FPIX2 FPIX2 FPIX2

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April 20-22, 2005 Super B Factory in Hawaii 26

FPIX2 Specifications

  • Pixel chip intended for use in Level 1 trigger (a first in HEP)

– All hit information must be read out in 132 nsec – Zero suppressed data readout – 840 Mbit/sec readout capability (1-6 programmable serial outputs)

  • 3 bit ADC in every pixel cell
  • Low noise with detector (110 e rms)
  • Low threshold dispersion with detector (250 e rms)

– No individual pixel trim DACs

  • Intended for 132 nsec beam interaction rate (can be run faster)
  • 50 x 400 micron cells arranged in 22 columns by 128 rows
  • Tolerates large leakage current (100 nA)
  • Functionality is highly programmable

– All adjustable parameters set to default values upon startup

  • Radiation hard to > 30 Mrads.
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SLIDE 27

April 20-22, 2005 Super B Factory in Hawaii 27

FPIX2 Block Diagram

Pixel Unit Cells (22 columns of 128 rows each) End-of-Column logic (22 copies) Core Logic

Core

DAC’s Programmable Registers

Programming Interface

Steering Logic Word Serializer Next Word Block Clock Control Logic Input/Output High Speed Output MCA/MCB (Readout Clock) BCO Clock

Data Output Interface

Only bias voltages required are 2.5V & ground. All I/O is LVDS.

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SLIDE 28

April 20-22, 2005 Super B Factory in Hawaii 28

FPIX2 Layout

Debugging Outputs (to be removed) 128x22 Pixel array End-of-Column Logic Data Output Interface Program Interface Registers and DAC’s LVDS Drivers and I/O pads Internal bond pads for Chip ID

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April 20-22, 2005 Super B Factory in Hawaii 29

Pixel Unit Cell

Vff Test Sensor Inject Vref

  • +

Vdda

Amplifier

Vth0 Vth1 Vth2 Vth7

3 bit FADC

Hit

Binary Encoder Command Interpreter 4 pairs of lines, 3 commands each: Wait for Data Idle Output Data Token & Bus Controller

Pulse ht: [0:2] Row # [0:7] Token In Token Out

Column Bus

Kill Vfb2 Ifb

Bias voltages & currents are set by DAC’s. Fast Hit OR

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April 20-22, 2005 Super B Factory in Hawaii 30

Layout of 4 pixels cells (50 µ x 400µ)

12 µm bump pads

Preamp 2nd stage +disc ADC Kill/ inject ADC encoder Digital interface

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April 20-22, 2005 Super B Factory in Hawaii 31

FSSR (Fermilab Silicon Strip Readout)

  • Designed in collaboration with INFN personnel
  • Originally planned for BTEV experiment
  • Major requirements

– Same programming interface and data output interface same as FPIX2 – Data driven architecture – no trigger – Programmable shaping times (65-125 nsec) for 132, 264, or 396 nsec BCO – 128 channels/chip – ENC < 1000 erms @ Cdet=20 pF

  • Measured 220 e + 26 e/pF

– Threshold dispersion < 500 erms

  • Measured 440 e rms

– Programmable gain of 10 or 6.7mV/fC – 3 bit ADC/channel – Power < 4mw/channel – Detector inputs on 50 u pitch – Radiation hard (TSMC 0.25 µ CMOS)

  • Pre-production parts received and under test

15 cm Wire bonds Silicon Strip detector Silicon Strip detector

FSSR FSSR FSSR FSSR

Data I/O

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April 20-22, 2005 Super B Factory in Hawaii 32

FSSR Block diagram

  • FSSR Core

– 128 analog channels – 16 sets of logic, each handling 8 channels – Core logic with BCO counter

  • Programming Interface (slow

control – same as FPIX2 – Programmable registers – DACs

  • Data Output Interface

– Communicates with core logic – Formats data output – Same as BTEV FPIX chip

  • Allows common DAQ

128 channels of analog circuits 16 sets of logic each handling 8 analog channels Core Logic To silicon strip detectors Programming Interface DACs Programmable Registers Steering Logic Word Serializer Clock Control Logic Next Block Word Core Data Output Interface BCO clock I/O Readout clock High Speed Output BCO ctr 1 16

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April 20-22, 2005 Super B Factory in Hawaii 33

FSSR Channel Electronics

Vth0 Vth1 Vth2 Vth7

3 bit FADC

Hit

Binary Encoder Command Interpreter 4 pairs of lines, 3 commands each: Wait for Data Idle Output Data Token & Bus Controller

Pulse ht: [0:2] Row # [0:7] Token In Token Out

Column Bus

Kill

Fast Hit OR

Gm Cinj Test input CR-(RC)2 Base Line restorer On/off Programmable shaping

Same as FPIX

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SLIDE 34

April 20-22, 2005 Super B Factory in Hawaii 34

FSSR Chip

128 input Bond pads Amplifier- Shaper- BLR End of column logic Program interface DACs ADCs Data Output Interface

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SLIDE 35

April 20-22, 2005 Super B Factory in Hawaii 35

IBM 0.13 micron Evaluation Chip

  • First venture into 0.13 micron design
  • Chip includes

– Pixel design based on FPIX2 – Various registers to study SEU – Frequency multiplier (PPL) – Test devices

  • Initial tests suggest good correlation between simulations

and actual devices.

  • Interest for possible MAPS applications
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SLIDE 36

April 20-22, 2005 Super B Factory in Hawaii 36

Chip Testing at FNAL

  • Production testing group for all chips developed at FNAL.

– Wafer level testing

  • Semiautomatic 8 inch wafer probe station

– Packaged parts testing

  • Two robotic packaged parts testers
  • Testing also done for other customers

– CMS ( pixel readout chips, token bit manager chip) – University of Michigan MASDAX chips

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SLIDE 37

April 20-22, 2005 Super B Factory in Hawaii 37

Robotic ASIC Tester

Custom interface board for DUT Robot loaded with 700 chips Pick and place head ASIC tester box * Analog and digital I/O * Serial link to computer Good Bad

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SLIDE 38

April 20-22, 2005 Super B Factory in Hawaii 38

Wafer Testing on Probe Station

  • Hardware has tested many ASICs.
  • Probe station

–Semi-automatic –Micro chamber –8” chuck

  • Data acquisition

–Tester box –Interface PCBs –Computer –Test & measurement equipment

Wafer maps showing Good and bad chips (green shading shows grading)

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SLIDE 39

April 20-22, 2005 Super B Factory in Hawaii 39

Summary

  • Fermilab ASIC designers have designed chips for numerous

different experiments. – CDF, Dzero, CMS, KTEV, MINOS, NOvA, CALICE, BTEV, etc.

  • Designs are generally mixed signal with an emphasis on the

analog design.

  • New areas of current interest include ILC (vertex, tracking,

calorimetry), SNAP (CCD control), PHENIX (mini strips), SCMS (pixels, mini strips).

  • Always interested in new projects.
  • For more information, checkout our web page

http://www-ppd.fnal.gov/EEDOfficew/ASIC_Development/asicmain.html.