An alternative way to control the spin relaxation rate in 2DEG. - - PowerPoint PPT Presentation

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An alternative way to control the spin relaxation rate in 2DEG. - - PowerPoint PPT Presentation

An alternative way to control the spin relaxation rate in 2DEG. Phys. Rev. Lett. 104, 226601 (2010) Oleg Chalaev Giovanni Vignale Department of Physics, University of Missouri, Columbia, MO 65211 USA Work supported by ARO Grant No.


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SLIDE 1

An alternative way to control the spin relaxation rate in 2DEG.

  • Phys. Rev. Lett. 104, 226601 (2010)

Oleg Chalaev Giovanni Vignale

Department of Physics, University of Missouri, Columbia, MO 65211 USA

Work supported by ARO Grant No. W911NF-08-1-0317

October 13, 2010

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SLIDE 2

The usual way to control the spin relaxation rate

Ec(z)

Ev(z)

– 2D electron gas with Rashba SOI: ˆ H = ˆ p2 2m + α(σx ˆ py − σy ˆ px), α =5P2 9

  • 1

E2

g

− 1 (Eg + ∆)2 n

  • ∂zUv(z)
  • n
  • ,

where Uv(z) is the effective potential acting on electrons in the valence band.

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SLIDE 3

Rashba SOI in GaAs n-doped quantum wells

Ev(z) |1 Ec(z)

The one-subband case: ˆ H = ˆ p2 2m + α(σx ˆ py − σy ˆ px) α = P2 3 1 |∂zUv| 1

  • 1

E2

g

− 1 (Eg + ∆)2

  • P =
  • S
  • ˆ

px m

  • X
  • ,

Uv(z) = ✘✘✘

✘ ❳❳❳ ❳

Uext(z) + Ev(z) + UH(z)

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SLIDE 4

Rashba SOI in GaAs n-doped quantum wells

Ev(z) Ec(z) |1 |2

The two-subband case: ˆ H1,2 = ˆ p2 2m + α1,2(σx ˆ py − σy ˆ px) αn = P2 3 n |∂zUv| n

  • 1

E2

g

− 1 (Eg + ∆)2

  • P =
  • S
  • ˆ

px m

  • X
  • ,

Uv(z) = ✘✘✘

✘ ❳❳❳ ❳

Uext(z) + Ev(z) + UH(z)

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SLIDE 5

The idea: controlling the total spin relaxation rate

Ev(z) Ec(z) |1 |2

αn ∝ n |∂zUv| n

p
  • pulation
  • f
subbands
  • n
trolling
  • n
trolling SOI strength the total

α1 ≪ α2

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SLIDE 6

Task#1:

Ev(z) Ec(z) |1 |2

αn ∝ n |∂zUv| n

Design such a quantum well shape that α1 ≪ α2

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SLIDE 7

The double Darboux Transformation (DDT) [Zakhariev & Chabanov] I

Ec = E(0)

c

−2 [ϕ2A]′ , ϕ1 = ϕ(0)

1 −AI21,

ϕ2 = rA r2 − 1 , A =

  • r2 − 1
  • ϕ(0)

2

1 +

  • r2 − 1
  • I22

, Inm(z) = z

−∞

ϕ(0)

n (y)ϕ(0) m (y)dy,

where r is the transformation parameter.

  • layers

doping

ǫ2 ǫ1

w w a δL

Ec(z) Ev(z)

δL = δR δR

DDT(r)

=⇒

spectrum conserved

  • layers

doping

log r = 0.82 w w

ϕ1(z) Ec(z) Ev(z) ϕ2(z)

δL a δR

Using DDT one can manipulate energy spectrum and/or wave functions.

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SLIDE 8

The double Darboux Transformation (DDT) [Zakhariev & Chabanov] II

ˆ H1,2 = ˆ p2 2m + α1,2(σx ˆ py − σy ˆ px) αn = P2 3 n |∂zUv| n

  • 1

E2

g

− 1 (Eg + ∆)2

  • choosing
  • ptimal

value of r

1e−06 1e−05 0.0001 0.001 0.01 0.1 1 −1 −0.5 0.5 1 0.18

|α1(r)| |α2(r)|

log r

0.82

SOI amplitude (4µeV · nm/¯

h)

At log r = 0.82 α1 = 0, but α2 0!

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SLIDE 9

Wave function engineering

  • layers

doping ϕ1(z) Ec(z) Ev(z) ϕ2(z)

400

α1 = 0 α2 = 7m/s= 4 × 10−3

nm · me V/¯

h

◮ The shape of the well is obtained using the inverse

scattering theory. [Zakhariev & Chabanov]

◮ Spin-orbit amplitude strongly depends on the level

population.

How can we change the population of the subbands?

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SLIDE 10

Wave function engineering

  • layers

doping ϕ1(z) Ec(z) Ev(z) ϕ2(z)

400

α1 = 0 α2 = 7m/s= 4 × 10−3

nm · me V/¯

h

◮ The shape of the well is obtained using the inverse

scattering theory. [Zakhariev & Chabanov]

◮ Spin-orbit amplitude strongly depends on the level

population.

How can we change the population of the subbands?

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SLIDE 11

Task#2:

Ev(z) Ec(z) |1 |2

αn ∝ n |∂zUv| n We already achieved α1 ≪ α2, now we must learn to

manipulate subbands population with an applied voltage.

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SLIDE 12

Energy distribution inside the current-carrying sample I

Requirements: D/L 2 ≫ τ−1

in =⇒ ◮ short wires ◮ low temperatures ◮ high mobilities

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SLIDE 13

Energy distribution inside the current-carrying sample II

E fE

b
  • rro
w ed ele trons from the lo w est subband

ǫ1 ǫ2

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SLIDE 14

Inhomogeneous population and spin-orbit amplitudes

0.2 0.4 0.6 0.8 1 1.2 0.2 0.6 0.8 1

V = 1.5(ǫ2 − ǫ1) n2 n1

The size
  • f
the zone where

n2 = 0

is
  • n
trolled b y V

n1

and n2

x/L

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SLIDE 15

Inhomogeneous population and spin-orbit amplitudes

0.2 0.4 0.6 0.8 1 1.2 0.2 0.6 0.8 1

V = 1.5(ǫ2 − ǫ1) n2 n1 n1

and n2

x/L

−0.1 −0.05 0.05 0.1 0.15 0.2 0.2 0.6 0.8 1

V = 1.5(ǫ2 − ǫ1) α2 α1

SOI amplitudes

x/L

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SLIDE 16

Conclusions

The width of the “red zone”, where the spin relaxation

  • ccurs is controlled by the applied voltage =⇒ an

alternative method to control the spin polarization.

Thank you!

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SLIDE 17

Conclusions

The width of the “red zone”, where the spin relaxation

  • ccurs is controlled by the applied voltage =⇒ an

alternative method to control the spin polarization.

Thank you!

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SLIDE 18

References

Ronald Winkler, “Spin-Orbit Effects in Two-Dimensional Electron and Hole Systems.” Springer, 2003.

  • B. N. Zakhariev and V. M. Chabanov,

“Submissive quantum mechanics. New status of the theory in inverse problem approach.” Nova Science Publishers, Inc. New York, 2008. Pothier, H. et al,

  • Phys. Rev. Lett., 79, 3490 (1997).
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SLIDE 19

The energy distribution in the middle of the sample

1 1.5 3 3.5 4.5 0.2 0.6 0.8 1

ǫ2(0) ǫ1(0) ǫ2(1) ǫ1(1) µL

V = 1.5(ǫ2 − ǫ1)/e

µ(x∗)

Energy hot ele trons with energies > µ(x∗)

µR

˜ x∗

˜ x

and fE(˜

x∗)