Welcome to JST-DFG Workshop on Nanoelectronics Prof. Dr. Katsuaki - - PowerPoint PPT Presentation

Welcome to JST-DFG Workshop on Nanoelectronics

• Prof. Dr. Katsuaki Sato

Research Supervisor of a PRESTO* Project, JST Professor, Tokyo University of Agriculture and Technology

Japan Science and Technology Agency

Opening Remarks

*Precursory Research for Embryonic Science and Technology

Introductory

• Welcome to Kyoto, ancient capital of Japan

with a long tradition of culture, and with the state-of-the-art technology.

• I have a special feeling here in Kyoto,

since I spent my student life at Kyoto University.

About this Workshop

• As presented by Mr. Takahashi this series of

JST-DFG workshop started in 2006 by an initiative of the Japanese-German Joint Committee on Science and Technology Cooperation.

• The first WS was held in Tokyo,

the second in Aachen and the third is now starting here in Kyoto.

Scientific relations in Japan and Germany

• In Edo period Japan learned medicine

and natural history from German doctor Philipp Franz von Siebold who stayed in Japan from 1823 to 1828.

• After Japan opened the window in

Meiji Period about 150 years ago Japanese people learned not only science and technology but also many social systems from Germany.

Hydrangea otakusa

• After World War II, both countries

achieved rapid reconstruction of their society from ruins by marvelous growth in industrial section based on science and technology.

• Although both countries are

subjected to the strong influence

• f the United States, they always

paid attention to their own culture.

After World War II

Crisis of Nanotech Research in Japan and Germany (1) Publications in Nanotechnology

Number of Publications Increase Rate to 2001 FY US Japan Germany China US Japan UK Germany China Korea Korea UK

Crisis of Nanotech Research in Japan (2) Budget for Nanotechnology

Budget of Public Sector Increase Rate to 2001 FY 108 yen US Japan Germany EU US Japan EU Germany

Government-initiated research program in Germany

• Nano-Initiative-Aktionsplan 2010 (Nov. 2006)

Research Areas of JST in Nanotechnology and Nanomaterials

Category

Area

Supervisor Fiscal Year 2 3 4 5 6 7 8 9 10 11 12 13 14 1 CREST Ultrafast Nanodevices H.Sakaki 2 CREST Nanotech Devices K.Kajimura 3 CREST Nanofactory K.Gamou 4 CREST Nano Structural Materials H.Fukuyama 5 CREST Nanochemical and biological Materilas H.Sasabe 6 CREST Soft Nanomachine K.Hotani 7 CREST Self Organization

• K. Kaya

8 CREST Enviromental Nano Catalyst M.Misono 9 CREST Energy Conservation Nanomaterials A.Fijushima 10 PRESTO Integration of nano areas S.Ushioda 11 PRESTO Structure control and Function

• Y. Okamoto

12 CREST Nano interface S.Shinkai 13 PRESTO Interface Control M.Kawai 14 CREST Innovative manufacturing YHoriike 15 PRESTO Nanomanufacturing N.Yokoyama 16 CREST Next-generation Electronic Devices H.Watanabe 17 PRESTO Next-generation Device Materials K.Sato NTVL

PRESTO Project Materials and Processes for Innovative Next –generation Devices

• This research area is intended to create innovative next-

generation devices with concepts beyond conventional silicon technology represented by CMOS, and is inviting challenging research proposals to develop novel materials and processes which enable realization of high-speed, large capacity, and highly advanced processing, storage, and transfer of information, with particular consideration to environment, resources, and energy consumption problems.

Japan Science and Technology Agency

2007 FY Researchers

Japan Science and Technology Agency

Research Themes 2007FY

• M. Kasai（Hokkaido U.）

Research on stochastic resonance nanodevices and their integration for novel noise-robust information processing systems

• E. Saito（Keio U.） Spintronics based on spin currents and spin-photon coupling in

dielectrics

• S. Shiraishi （Osaka U.）Spin current control in molecules
• Y. Takahashi (NIMS) Development of half-metal at RT for spintronics devices
• T. Taniyama （TIT） Control of spin polarization and its application to tunable spin

sources

• A. Tsukamoto （Nihon U.）Ultrafast manipulation and measurement of spin dynamics

by femtosecond laser pulse

• N. Fukada (NIMS)

Development of semiconductor nanowires for the realization of vertical three-dimensional semiconductor devices

• S. Murakami （TIT） Unified Theory of Spin and Heat Currents and its Applications
• T. Yasuda （NIMS）

High-performance organic field-effect transistors using intrachain carrier transport along uniaxially aligned p-conjugated polymers

• A. Yamaguchi （Keio U.） Study in novel electromagnetic properties of modulated

and/or periodic magnetic structure composed of nanoscale magnets

• K. Wakabayashi（Hiroshima U.）Design and Physical Properties Forecast of Nano-

Carbon Electronic Devices Based on Computational Methods

2008 FY Researchers

Japan Science and Technology Agency

Research Themes 2008FY

R.Katayama (U. Tokyo) Novel Optical Functionality using Photonic Nanostructure

• f Polar Wide-gap Semiconductors
• I. Kawayama (Osaka U.) Creation of an optically-generated-flux-quantum nano-device

with superconducting nanobridges

• Y. Kangawa (Kyushu U.) Fabrication of III-nitride substrate for optoelectronic

integrated circuit and control of its heat transfer

• W. Kobayashi (Waseda U.) Development of materials for thermoelectronics
• T. Suzaki (TIT) New functionalities at the interfaces of wide-gap oxides
• M. Takenaka (U. Tokyo) Ge Nano Electro-Optic LSI for intrachip optical interconnects
• T. Nakaoka (U. Tokyo) Charge/spin/photon hybrid single-electron device based on

quantum dot

• K. Hmaya (Kyushu U.) Dvelopment of single-electron spin transisotors with silicon-

based nanostructures

• T. Fukumura (Tohoku U.) Wide-gap ferromagnetic semiconductor devices
• N. Mizuochi (Tsukuba U.) Quantum information devices by single paramagnetic color

center in wide-bandgap semiconductor

Japan Science and Technology Agency

An episode before fixing the Scope of WS

• Dr. Yokoyama and I first proposed a

program relating to electronic devices for next generation; more Moore, more than Moore and beyond CMOS.

• Through exchange of opinions with Dr. Felser

who proposed a program relating to materials-

• riented researches we modified the program

to the present state.

Sessions

• 1. Nanoscience and Nanomaterials for Future

Electronic Devices: 6 lectures (January 21)

• 2. Nanoelectronics Device Technologies: 6 lectures

(January 21)

• 3. Nanomaterials for Renewable Energy: 5 lectures

(January 22)

• 4. Measurement and Characterization: 6 lectures

(January 22)

• 5. Theoretical and Computational Approaches: 6

lectures (January 23)

Enjoy WS

• The purpose of this WS is to provide a forum

where researchers of nanotechnology and nanoscience from both countries become acquainted with each other, and make an

• pportunity to make new joint research plans

for coming FY.

• Active discussions in a warm and friendly

atmosphere are strongly expected .

Enjoy Kyoto!

• Please enjoy sightseeing and food in Kyoto

during your stay, and feel a traditional Japanese atmosphere of the old capital.

Thank you for your kind attention.