Contents Theory & Design Fabrication Packaging
MEMS Comb Drive Actuator to Vary Tension & Compression of a Resonating Nano-Doubly Clamped Beam for High-Resolution & High Sensitivity Mass Detection
MECE E4212 FALL ‘05 MEMS DESIGN PROJECT GROUP D
Today s Presentation Contents MEMS Comb Drive Actuator to Vary - - PowerPoint PPT Presentation
MECE E4212 FALL 05 MEMS DESIGN PROJECT GROUP D Today s Presentation Contents MEMS Comb Drive Actuator to Vary Tension & Compression of a Resonating Nano-Doubly Clamped Beam for High-Resolution & High Sensitivity Mass Detection
MECE E4212 FALL ‘05 MEMS DESIGN PROJECT GROUP D
MECE E4212 FALL ‘05 MEMS DESIGN PROJECT GROUP D
MECE E4212 FALL ‘05 MEMS DESIGN PROJECT GROUP D
MECE E4212 FALL ‘05 MEMS DESIGN PROJECT GROUP D
MECE E4212 FALL ‘05 MEMS DESIGN PROJECT GROUP D
MECE E4212 FALL ‘05 MEMS DESIGN PROJECT GROUP D
MECE E4212 FALL ‘05 MEMS DESIGN PROJECT GROUP D
MECE E4212 FALL ‘05 MEMS DESIGN PROJECT GROUP D
MECE E4212 FALL ‘05 MEMS DESIGN PROJECT GROUP D
3 2 /
Pd eAu
MECE E4212 FALL ‘05 MEMS DESIGN PROJECT GROUP D
MECE E4212 FALL ‘05 MEMS DESIGN PROJECT GROUP D
Voltage Input vs. Comb Drive Lateral Force
0.00E+00 2.00E-06 4.00E-06 6.00E-06 8.00E-06 1.00E-05 1.20E-05 1.40E-05 1.60E-05 20 40 60 80 100 120 140 160 Voltage (V) Comb Drive Lateral Force (N) Force Dependence on Voltage 200MPa on Beam
MECE E4212 FALL ‘05 MEMS DESIGN PROJECT GROUP D
Voltage vs. Lateral Displacement
5 10 15 20 25 30 35 40 20 40 60 80 100 120 140 160 Voltage (V) Lateral Displacement (nm) Lateral Displacement Dependence on Voltage Lateral Displacement at 200MPa
MECE E4212 FALL ‘05 MEMS DESIGN PROJECT GROUP D
MECE E4212 FALL ‘05 MEMS DESIGN PROJECT GROUP D
n=1 3
MECE E4212 FALL ‘05 MEMS DESIGN PROJECT GROUP D
2(x)dx L
L
n=1 3
MECE E4212 FALL ‘05 MEMS DESIGN PROJECT GROUP D
MECE E4212 FALL ‘05 MEMS DESIGN PROJECT GROUP D
Step Description Starting Material SOI (5µm-1µm-125µm) Clean Standard RCA clean Photo Resist Spin on photoresist PhotolithographyMask #1 (contacts) develop Remove area for contact and beam placement clean Standard RCA clean E-beam evap. Au/Pd e-beam evaporation to a depth of 80nm strip Remove photoresist clean Stardard RCA clean Photo Resist Spin on photoresist PhotolithographyMask #2 (basic structure) develop Develop and remove used photoresist etch RIE to Silicon Dioxide surface strip Remove photoresist clean Standard RCA clean Etch (optional) Optional - if by using SEM we notice the the underside of the beam is not cut, we will purge the system with XeF2 clean Standard RCA clean Etch 5:1 BOE etch Drying Supercritical CO2 drying Clean Standard RCA clean Contacts Place contacts. Wire bond to package. Test Test structure Mount Pryrex mount Test Test structure
MECE E4212 FALL ‘05 MEMS DESIGN PROJECT GROUP D
MECE E4212 FALL ‘05 MEMS DESIGN PROJECT GROUP D
MECE E4212 FALL ‘05 MEMS DESIGN PROJECT GROUP D
MECE E4212 FALL ‘05 MEMS DESIGN PROJECT GROUP D
MECE E4212 FALL ‘05 MEMS DESIGN PROJECT GROUP D
MECE E4212 FALL ‘05 MEMS DESIGN PROJECT GROUP D
MECE E4212 FALL ‘05 MEMS DESIGN PROJECT GROUP D