Time resolved LIF studies on sputtered atoms velocity distribution - - PowerPoint PPT Presentation
Time resolved LIF studies on sputtered atoms velocity distribution - - PowerPoint PPT Presentation
Time resolved LIF studies on sputtered atoms velocity distribution function 13 th FLTPD Ludovic de Poucques, Mikal Desecures, Abderzak El Farsy, Jamal Bougdira Institut Jean Lamour, NANCY, FRANCE 13/05/2019 Outline Introduction (S2-S8)
Outline
Experimental setup (S9-S18) : TR-TDLIF (Time Resolved-Tunable Diode Laser Induced Fluorescence)
Ludovic de Poucques –13th FLTPD – 13/05/2019
1
Velocity distribution function of sputtered Ti atoms (S33-S38) Velocity distribution function of sputtered W atoms (S19-S32)
Optical arrangement, time resolution Analysis of the TR-TDLIF signal : calculation of Flux velocity distribution function (FVDF) of energetic and thermalized populations. Study of Ar/He gas mixture effect on the transport of W atoms. Analysis of the TR-TDLIF signal : highlights an intermediate regime of transport between ballistic (energetic atoms) and diffusive (thermalized atoms) ones, named quasi-diffusive regime of transport (quasi-thermalized atoms).
Introduction (S2-S8)
Magnetron sputtering, HiPIMS, objectives of our work.
Introduction
Ludovic de Poucques –13th FLTPD – 13/05/2019
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Magnetron sputtering
Conventional magnetron sputtering (dc-MS or rf-MS) :
- Developed since the 70’s for microelectronics applications
- Nowadays established and widely used method for thin films growth (thin films of materials
such as metals, oxides, nitrides, ceramics, etc) + + + Sputtering of the target (W or Ti) Racetrack on the target n n n Plasma ions Sputtered atoms due to : V E B
B
Deposition on the substrate E : cathode voltage B : permanent magnets
Introduction
Ludovic de Poucques –13th FLTPD – 13/05/2019
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Magnetron sputtering
Conventional magnetron sputtering (dc-MS or rf-MS) : HiPIMS : High Power Impulse Magnetron Sputtering (has emerged in the late 90’s)
- In dc-MS or rf-MS : ionization degree of sputtered atoms is weak (~1%).
Sputtered atoms remain mainly neutral atoms (between target and substrate) (ionized sputtered atoms do not contribute to the deposition) The high level of expectations regarding new applications (e. g. deposition on complex shape : 3D) requires to ionize sputtered neutral atoms (difficult to control : trajectories and energies)
Introduction
Ludovic de Poucques –13th FLTPD – 13/05/2019
4
HiPIMS
- high power (a few kW.cm-2) during short pulses (tens of µs) to avoid the cathode
- verheating and arc formation (dc-MS : a few 10 W.cm-2).
- Plasma density : 1012 - 1013 cm-3 (dc-MS : ~1011 cm-3).
- Ionization degree of the sputtered particles : usually ≥ 50 % (dc-MS : ~1 %).
Ion energy and trajectory can be controlled by polarizing the substrate, while neutrals are difficult to control. However, a significant fraction of sputtered neutral atoms remains and may influence thin film properties. Deposition on complex shape Cu Si
Introduction
Ludovic de Poucques –13th FLTPD – 13/05/2019
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Objectives
Transport : function of “p × d”, gas mixture, σ(ε), ionization
Anode Magnetron cathode
- V
Energetic atoms Substrate Thermalized atoms
Number of collisions pressure × distance ε : several eV (Thomson’s distribution) ε : a few 0.01 eV Balistical transport: Energetic atoms (EN) Diffusive transport: Thermalized atoms (TH) collisions Therefore, the knowledge of the properties of incoming film-forming neutral species (study of atoms transport) is required for a better understanding of the HiPIMS deposition process …. One approach to study sputtered atoms transport is the experiment (TR-Laser diagnostics)
Introduction
Ludovic de Poucques –13th FLTPD – 13/05/2019
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Objectives
Literature : some TR laser measurements on neutral sputtered atoms in HiPIMS
- Ex. 1 : Palmucci M. et al., JAP 114, 113302 (2013)
TR-LIF measurements with a dye laser (pumped by Nd:YAG laser at 532 nm) : 305 ≤ λ ≤ 330 nm (DCM dye) LIF : space-resolved measurements In this work : distribution of v// is considered And the laser linewidth is ~0.8 pm (~Doppler broadening) Diode Laser (high spectral resolution : < 0.01 pm)
Introduction
Ludovic de Poucques –13th FLTPD – 13/05/2019
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Objectives
Most of laser experiments : distribution of v// is considered (vr) Ti
- Ex. 2 : Sushkov V. et al., PSST 22, 015002 (2013)
TR-TDLAS measurements with a single mode DL (Toptica Photonics DL 100) : λ = 398.18 nm LAS : information is averaged along laser beam which is not suitable to probe an inhomogenous plasma like in magnetron discharge (close to the target and/or at very low pressure) Literature : some TR laser measurements on neutral sputtered atoms in HiPIMS z=7 cm
Introduction
Ludovic de Poucques –13th FLTPD – 13/05/2019
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Objectives
Axial laser beam
W Ti knowing that the transport of atoms is from the target toward the substrate : TR-TDLIF (velocity component ⊥ to the target vz). TR- axial VDF (z, t), z = the distance from the target. calibration by means of TR-TDLAS to get absolute values (in conditions where the sputtered vapor can be considered as homogeneous : TH, p, z, t). Our work : characterize sputtered neutral atoms (W, Ti) transport in HiPIMS process.
Outline
Experimental setup (S9-S18) : TR-TDLIF (Time Resolved-Tunable Diode Laser Induced Fluorescence)
Ludovic de Poucques –13th FLTPD – 13/05/2019
Velocity distribution function of sputtered Ti atoms (S33-S38) Velocity distribution function of sputtered W atoms (S19-S32)
Optical arrangement, time resolution Analysis of the TR-TDLIF signal : calculation of Flux velocity distribution function (FVDF) of energetic and thermalized populations. Study of Ar/He gas mixture effect on the transport of W atoms. Analysis of the TR-TDLIF signal : highlights an intermediate regime of transport between ballistic (energetic atoms) and diffusive (thermalized atoms) ones, named quasi-diffusive regime of transport (quasi-thermalized atoms).
Introduction (S2-S8)
Magnetron sputtering, HiPIMS, objectives of our work.
Experimental setup
9
Optical arrangement
Ludovic de Poucques –13th FLTPD – 13/05/2019
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Ludovic de Poucques –13th FLTPD – 13/05/2019
Experimental setup
Optical arrangement
DL beam is split into two parts with a beam splitter
11 The 1st beam (20 %=4 mW) is guided to a Fabry–Pérot interferometer (∆ν=1 GHz free spectral range) to perform a calibration of the laser wavelength scan (∆λlaser(t)).
Experimental setup
Optical arrangement
Ludovic de Poucques –13th FLTPD – 13/05/2019
12
Experimental setup
Optical arrangement
Ludovic de Poucques –13th FLTPD – 13/05/2019
The 2nd beam (80 %=16 mW) :
- launched into the discharge chamber
- oriented normally to the target surface
for vz measurements
- towards the racetrack center (R0=1,3
cm), where sputtering of atoms is mostly localized
13 Doppler’s relation :
∆λ λ λ λ λ c
Vz=0 : λlaser=λ0=λtransition Vz>0 : λlaser>λ0 (toward the substrate) Vz<0 : λlaser<λ0 (backscattering)
Experimental setup
Optical arrangement
Ludovic de Poucques –13th FLTPD – 13/05/2019
14 Detection system + laser beam section Probed volume ≈ 3 mm3 Reliable comparisons of VDF(z) : Detection system is fixed Magnetron cathode is moved by means of a bellows+linear translator system
Experimental setup
Optical arrangement
Ludovic de Poucques –13th FLTPD – 13/05/2019
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Asymmetric current ramp (5 Hz) Wavelength:
λ1 λ2 λ3 λ180
Pulse number: Time Current
Ludovic de Poucques –13th FLTPD – 13/05/2019
Experimental setup
Time resolution
15
Asymmetric current ramp (5 Hz) Wavelength:
λ1 λ2 λ3 λ180
Pulse number: Time Current HiPIMS period n° 1: TR-TDLIF at λlaser=λ1 =λ1 2: λlaser=λ1 +0.077pm =λ2 3: λlaser=λ1 +2×0.077pm =λ3 180: λlaser=λ1 + 179×0.077pm =λ180
Experimental setup
Time resolution
∆λ during one HiPIMS period 1 ms ~ 14 180 0.077 pm Doppler velocity increment is only ∆vz~60 m/s for Ti (30 m/s for W)
Ludovic de Poucques –13th FLTPD – 13/05/2019
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Asymmetric current ramp (5 Hz) Wavelength:
λ1 λ2 λ3 λ180
Pulse number: Time Current
40 80 120 160
Time (µs)
Signal de TD-LIF
Time (ms)
Experimental setup
Time resolution
Ludovic de Poucques –13th FLTPD – 13/05/2019 TR-TDLIF signal
17
Asymmetric current ramp (5 Hz) Wavelength:
λ1 λ2 λ3 λ180
Pulse number: Time Current
40 80 120 160
Time (µs)
Signal de TD-LIF 55 56 57 λ57 λ56
Time (ms)
λ55
Time (ms)
Experimental setup
Time resolution
Ludovic de Poucques –13th FLTPD – 13/05/2019 TR-TDLIF signal
18
Asymmetric current ramp (5 Hz) Wavelength:
λ1 λ2 λ3 λ180
Pulse number: Time Current
40 80 120 160
Time (µs)
Signal de TD-LIF 55 56 57 λ57 λ56
Time (ms)
λ55
λ++ λ λ ,-°++/ c λ+0 λ λ ,-°+0/ c vz(n°56)=vz(n°55)+∆vz
Temporal evolution
AVDF(0 ≤ t ≤ ~1 ms)
Time (ms)
Experimental setup
Time resolution
Ludovic de Poucques –13th FLTPD – 13/05/2019 TR-TDLIF signal
Outline
Experimental setup (S9-S18) : TR-TDLIF (Time Resolved-Tunable Diode Laser Induced Fluorescence)
Ludovic de Poucques –13th FLTPD – 13/05/2019
Velocity distribution function of sputtered Ti atoms (S33-S38) Velocity distribution function of sputtered W atoms (S19-S32)
Optical arrangement, time resolution Analysis of the TR-TDLIF signal : calculation of Flux velocity distribution function (FVDF) of energetic and thermalized populations. Study of Ar/He gas mixture effect on the transport of W atoms. Analysis of the TR-TDLIF signal : highlights an intermediate regime of transport between ballistic (energetic atoms) and diffusive (thermalized atoms) ones, named quasi-diffusive regime of transport (quasi-thermalized atoms).
Introduction (S2-S8)
Magnetron sputtering, HiPIMS, objectives of our work.
VDF of sputtered W atoms
19
Analysis of the TR-TDLIF signal
Ludovic de Poucques –13th FLTPD – 13/05/2019
i % Δλ(pm)
182W
26,50
- 0.16 pm
183W
14,31 0 pm
184W
30,64 0.14 pm
186W
28,43 0.40 pm
4 isotopes Experimentally poorly studied Numerous applications in thin layer deposition (ex : WC and WOX) First wall material in fusion devices Interesting case in term of sputtered atoms transport, considering its atomic mass (directivity and energy transfer) planar balanced magnetron cathode equipped with a 5 cm diameter W target
20
9 pm
200 pulses ~ 6. 105 points → 0.5 µs → 0.045 pm (~∆vz=30 m/s)
λlaser scan (~ 3Hz)
λ0=407.436 nm Resonant scheme : λLIF(t)= λlaser(t)
VDF of sputtered W atoms
Analysis of the TR-TDLIF signal
Ludovic de Poucques –13th FLTPD – 13/05/2019
Ton/Toff : 7.5 µs/1.5 ms A short Td (7.5 µs) was set in order to study the transport of W atoms with limited disturbances linked to the plasma (strong optical emission and W atoms production).
no DL available to probe the W’s ground state Sufficiently low laser powers (saturation effect)
21 2D-image of a typical TR-TDLIF Signal : wavelenght resolved (or velocity resolved) in abscissa and time resolved in ordinate In order to situate the origin ∆λ=0 (vz=0 or λ0ref), the TR-TDLIF signal was measured at a sufficiently long time (t~1ms) from the discharge onset, so that most
- f the sputtered W atoms are thermalized.
vz=0 is determined at the maximum of the Gaussian fitting the TH population of one of the isotopes (arbitrarily the isotope 183W was chosen) TH EN
VDF of sputtered W atoms
Analysis of the TR-TDLIF signal
Ludovic de Poucques –13th FLTPD – 13/05/2019
DISCHARGE
22
Δλ=1 pm
500 1000 1500 0.00 2.50x10
- 3
5.00x10
- 3
7.50x10
- 3
1.00x10
- 2
1.25x10
- 2
TR-TDLIF signal (V) t (µs)
HiPIMS period n°70
Δλ=λlaser-λ0=1 pm (vz=700 m/s for 183W isotope)
- 2
- 1
1 2 3 4 5 6 7
- 2
2 4 6 8
t = 40 µs t = 20 µs
10 20 30
TR-TDLIF signal (mV)
∆λ = λlaser-λref(
183W) (pm)
v (m s
- 1)
- 1000
1000 2000 3000 4000 5000
40 μs 20 μs
Doppler profil at given time
VDF of sputtered W atoms
Analysis of the TR-TDLIF signal
Ludovic de Poucques –13th FLTPD – 13/05/2019
DISCHARGE
23
1 2 3 4 5 * 183W * 182W * 184W * 186W
t = 40 µs t = 20 µs t = 200 µs
* gaussian
5 10 15
TR-TDLIF signal (mV)
- 2
- 1
1 2 3 4 5 6 7
2 4 6
∆λ = λlaser-λref(
183W) (pm)
vz (m s
- 1)
- 1000
1000 2000 3000 4000 5000
VDF of sputtered W atoms
Analysis of the TR-TDLIF signal
Ludovic de Poucques –13th FLTPD – 13/05/2019
EN BALISTICAL regime of transport EN + TH MIXTE TH DIFFUSIVE Data analysis: 2 groups of 4 Gaussians → atoms velocity distribution function (AVDF) TH EN TH and EN : much different properties of transport → better represented by their flux (v)
24
Flux VDF
Z=2 cm ; 4 Pa ; Ton/Toff : 7.5 μs/1.5 ms ; 200 W cm-2
EN TH FVDF(vz) = AVDF(vz) × vz (W183 x 100 / 14.31 : natural abundance)
VDF of sputtered W atoms
Ludovic de Poucques –13th FLTPD – 13/05/2019
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0.5 1.0 1.5 2.0
[Wrel]TH [Wrel]EN [Wrel]TOT
[Wrel] (10
3Vcms
- 1)
0.5 1.0 1.5
(Φrel)TH
(Φrel)EN (Φrel)TOT
Φrel (10
6Vcm 2s
- 2)
20 40 60 80 100 120 140 160 4 8 12 16 <Ez>EN=0.5M<vz
2>(eV)
t (µs)
EN TH
Z=2 cm ; 4 Pa ; Ton/Toff : 7.5 μs/1.5 ms ; 200 W cm-2
VDF of sputtered W atoms
Flux VDF
Ludovic de Poucques –13th FLTPD – 13/05/2019
M Desecures, L de Poucques, T Easwarakhanthan, J Bougdira, Applied Physics Letters, vol. 105 (2014) n°181120. M Desecures, L de Poucques, J Bougdira, Plasma Sources Science & Technol., vol. 26 (2017) n°025003.
FVDF(vz) = AVDF(vz) × vz (W183 x 100 / 14.31 : natural abundance) Vz>0
Outline
Experimental setup (S9-S18) : TR-TDLIF (Time Resolved-Tunable Diode Laser Induced Fluorescence)
Ludovic de Poucques –13th FLTPD – 13/05/2019
Velocity distribution function of sputtered Ti atoms (S33-S38) Velocity distribution function of sputtered W atoms (S19-S32)
Optical arrangement, time resolution Analysis of the TR-TDLIF signal : calculation of Flux velocity distribution function (FVDF) of energetic and thermalized populations. Study of Ar/He gas mixture effect on the transport of W atoms. Analysis of the TR-TDLIF signal : highlights an intermediate regime of transport between ballistic (energetic atoms) and diffusive (thermalized atoms) ones, named quasi-diffusive regime of transport (quasi-thermalized atoms).
Introduction (S2-S8)
Magnetron sputtering, HiPIMS, objectives of our work.
26
Study of He effect on W atoms transport
z=5 cm ; 4 Pa
z=5 cm ; 8 Pa z=9 cm ; 4 Pa
20 40 60 80
0.0 4.0x10
9
8.0x10
9
1.2x10
10
1.6x10
10
2.0x10
10
Total flux (cm
- 2)
% He in Ar/He mixture Ton/Toff: 7.5 μs/1.5 ms ; 200 W/cm2
Total Flux directed towards the substrat (vz>0): Number of atoms deposited during a HiPIMS period
Ludovic de Poucques –13th FLTPD – 13/05/2019
VDF of sputtered W atoms
27
Study of He effect on W atoms transport
Ton/Toff: 7.5 μs/1.5 ms ; 200 W/cm2
z=5 cm ; 4 Pa
z=5 cm ; 8 Pa z=9 cm ; 4 Pa
20 40 60 80
0.0 4.0x10
9
8.0x10
9
1.2x10
10
1.6x10
10
2.0x10
10
Total flux (cm
- 2)
% He in Ar/He mixture
0.00 0.05 0.10 0.15 0.20 0.25 deposition 5 cm ; 4 Pa deposition 5 cm ; 8 Pa deposition 9 cm ; 4 Pa
Deposition rate (µm/hr) Measurements on metastable level are well representative of the → total deposited particles in HiPIMS process (ions + neutrals) Study of neutral atoms kinetic considering time evolution of metastable state flux VDF Total Flux directed toward the substrat (vz>0): Number of atoms deposited during a HiPIMS period
Ludovic de Poucques –13th FLTPD – 13/05/2019
VDF of sputtered W atoms
28
4 Pa ; 200 W/cm2 Ton/Toff: 7.5 μs/1.5 ms
Close to the target z=1.3 cm Sputtering Few collisions
Ludovic de Poucques –13th FLTPD – 13/05/2019
VDF of sputtered W atoms
Study of He effect on W atoms transport
0%He
FVDF (part. cm-3)
80%He FVDF (part. cm-3)
29 Close to the target z=1.3 cm Sputtering Few collisions
VDF of sputtered W atoms
Study of He effect on W atoms transport
Ludovic de Poucques –13th FLTPD – 13/05/2019
4 Pa ; 200 W/cm2 Ton/Toff: 7.5 μs/1.5 ms
0%He
FVDF (part. cm-3)
80%He FVDF (part. cm-3)
Effective sputtering even at 80% He
(no sputtering at 100% He)
Ionization energy Ar = 15.8 eV He = 23.0 eV
1234 5%78 1234 %78 =0.9
30
4 Pa ; Ton/Toff: 7.5 μs/1.5 ms ; 200 W/cm2
Distance z=5 cm from the target Transport More collisions
VDF of sputtered W atoms
Study of He effect on W atoms transport
Ludovic de Poucques –13th FLTPD – 13/05/2019
0%He 40%He 80%He
FVDF (part. cm-3) FVDF (part. cm-3) FVDF (part. cm-3)
31
4 Pa ; Ton/Toff: 7.5 μs/1.5 ms ; 200 W/cm2
Transport improvement with %He
1234 5%78 1234 %78 =3
Distance z=5 cm from the target Transport More collisions
VDF of sputtered W atoms
Study of He effect on W atoms transport
Ludovic de Poucques –13th FLTPD – 13/05/2019
0%He 40%He 80%He
FVDF (part. cm-3) FVDF (part. cm-3) FVDF (part. cm-3)
~15 collisions with Ar ~100 collisions with He Energy transfers W/Ar → Ef/Ei = 0.70 (30%) W/He → Ef/Ei = 0.98 (2%) Thermalization (W with 〈4 eV〉)
32
VDF of sputtered W atoms
Study of He effect on W atoms transport
Ludovic de Poucques –13th FLTPD – 13/05/2019
20 40 60 80
0.0 5.0x10
4
1.0x10
5
1.5x10
5
2.0x10
5
2.5x10
5
Total deposited energy (part cm
- 3eV)
% He in Ar/He
AN TH TOTAL
AN TH TOTAL
20 40 60 80 0.0 5.0x10
9
1.0x10
10
1.5x10
10
2.0x10
10
Total flux (cm
- 2)
% He in Ar/He
TOTAL DEPOSITED FLUX DURING 1 HiPIMS PERIOD TOTAL DEPOSITED ENERGY DURING 1 HiPIMS PERIOD Z= 5 cm 4 Pa ; 200 W/cm2 Ton/Toff: 7.5 μs/1.5 ms
9 t 1 2 m < vz
AVDF vz, t CD
- dvz
Direct characterization of deposited atoms properties Conclusion : could be exploited to tune thin film properties and for process optimization
Outline
Experimental setup (S9-S18) : TR-TDLIF (Time Resolved-Tunable Diode Laser Induced Fluorescence)
Ludovic de Poucques –13th FLTPD – 13/05/2019
Velocity distribution function of sputtered Ti atoms (S33-S38) Velocity distribution function of sputtered W atoms (S19-S32)
Optical arrangement, time resolution Analysis of the TR-TDLIF signal : calculation of Flux velocity distribution function (FVDF) of energetic and thermalized populations. Study of Ar/He gas mixture effect on the transport of W atoms. Analysis of the TR-TDLIF signal : highlights an intermediate regime of transport between ballistic (energetic atoms) and diffusive (thermalized atoms) ones, named quasi-diffusive regime of transport (quasi-thermalized atoms).
Introduction (S2-S8)
Magnetron sputtering, HiPIMS, objectives of our work.
33
Analysis of the TR-TDLIF signal
Resonance transition at λ0=398.176 nm Ground state 3d24s2 (3F2):0 eV ↔ 3d2(3F)4s4p(1P°):3.1129 eV
2.7 Pa ; z=1.3 cm Ton/Toff: 10 μs/1 ms 350 W/cm2
VDF of sputtered Ti atoms
Ludovic de Poucques –13th FLTPD – 13/05/2019
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- 2
2 4 6 8 1 2 3 4 5
- 2
2 4 6 8 1 2 3 4 5
TR-TDLIF measurement (cm-4.s) TH EN ×107
10.7 µs Atoms velocity (km.s-1)
TH
102 µs
×107
2.7 Pa ; z=1.3 cm Ton/Toff: 10 μs/1 ms 350 W/cm2
Analysis of the TR-TDLIF signal
Resonance transition at λ0=398.176 nm Ground state 3d24s2 (3F2):0 eV ↔ 3d2(3F)4s4p(1P°):3.1129 eV
VDF of sputtered Ti atoms
Ludovic de Poucques –13th FLTPD – 13/05/2019
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Ludovic de Poucques –13th FLTPD – 13/05/2019
Analysis of the TR-TDLIF signal
Resonance transition at λ0=398.176 nm Ground state 3d24s2 (3F2):0 eV ↔ 3d2(3F)4s4p(1P°):3.1129 eV
VDF of sputtered Ti atoms
- 2
2 4 6 8 1 2 3 4
- 2
2 4 6 8 0.0 0.8 1.6 2.4 3.2
×10
7
23 µs
×10
7
17 µs Atoms velocity (km.s
- 1)
TR-TDLIF measurement (cm
- 4.s)
36
- 2
2 4 6 8 1 2 3 4
- 2
2 4 6 8 0.0 0.8 1.6 2.4 3.2
×10
7
experimental AVDF TH QTH EN Total fit
EN
23 µs
TH QTH
×10
7
17 µs Atoms velocity (km.s
- 1)
TR-TDLIF measurement (cm
- 4.s)
3rd population
Ludovic de Poucques –13th FLTPD – 13/05/2019
Analysis of the TR-TDLIF signal
VDF of sputtered Ti atoms
A el Farsy, J Ledig, M Desecures, J Bougdira, L de Poucques, Plasma Sources Science & Technol., vol. 28 (2019) n° 035005.
37
- 2
2 4 6 8 1 2 3 4
- 2
2 4 6 8 0.0 0.8 1.6 2.4 3.2
×10
7
experimental AVDF TH QTH EN Total fit
EN
23 µs
TH QTH
×10
7
17 µs Atoms velocity (km.s
- 1)
TR-TDLIF measurement (cm
- 4.s)
〈vz〉 ~ 1.5 km.s-1 〈Ez〉 ~ 0.5 eV 〈vz〉 ~ 1 km.s-1 〈Ez〉 ~ 0.2 eV QTH atoms VDF is anisotropic (〈vz〉QTH > 0 ) and 〈Ez〉QTH decreases from ~0.5 eV to ~0.05 eV (〈Ez〉TH=0.03 eV ; 〈vz〉TH =0).
Analysis of the TR-TDLIF signal
VDF of sputtered Ti atoms
3rd population
Ludovic de Poucques –13th FLTPD – 13/05/2019
A el Farsy, J Ledig, M Desecures, J Bougdira, L de Poucques, Plasma Sources Science & Technol., vol. 28 (2019) n° 035005.
38
- 2
2 4 6 8 1 2 3 4
- 2
2 4 6 8 0.0 0.8 1.6 2.4 3.2
×10
7
experimental AVDF TH QTH EN Total fit
EN
23 µs
TH QTH
×10
7
17 µs Atoms velocity (km.s
- 1)
TR-TDLIF measurement (cm
- 4.s)
EN atoms (~〈3 eV〉) Balistical transport Anisotropic AVDF Collisions Collisions QTH atoms quasi-diffusive transport Anisotropic AVDF TH atoms Diffusive transport Isotropic AVDF
Ludovic de Poucques –13th FLTPD – 13/05/2019
Analysis of the TR-TDLIF signal
VDF of sputtered Ti atoms
~6-7 ~1-3
A el Farsy, J Ledig, M Desecures, J Bougdira, L de Poucques, Plasma Sources Science & Technol., vol. 28 (2019) n° 035005.
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Ludovic de Poucques –13th FLTPD – 13/05/2019
Conclusion and prospects
- A TR-TDLIF technique combining spatial (~3 mm3), temporal (~0.5 µs) and spectral (< 0.
pm) resolutions was developed to measure the axial AVDF, axial FVDF and to study the transport of neutral sputtered atoms in a HiPIMS deposition process.
- The insight into the spatio-temporal behavior of the film-forming species may be useful to
tune the film physical properties as desired and as input data in modeling plasma deposition processes.
- Indeed, with TR- axial VDF measurements, we obtain a direct characterization of the
deposited neutral atoms properties.
- Moreover, the analysis of TR- axial Ti atoms VDF measurements highlighted a third
population of atoms (QTH atoms).
40
Ludovic de Poucques –13th FLTPD – 13/05/2019
Conclusion and prospects
- This diagnostic, originally developed to study HiPIMS process, may be extended with
appropriate DLs to probe any species with rapidly changing AVDF and FVDF in other pulsed plasmas.
- Study the reactive HiPIMS deposition process. This work is in progress with a Ti target and
in Ar/N2 gas mixture.
- Corroborate laser measurements with deposited thin layers properties, in view of a
potential HiPIMS deposition process optimization.
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Ludovic de Poucques –13th FLTPD – 13/05/2019