Arno Smets
Third Generation PV and Other Ways to Utilize Solar Energy Third - - PowerPoint PPT Presentation
Third Generation PV and Other Ways to Utilize Solar Energy Third - - PowerPoint PPT Presentation
Third Generation PV and Other Ways to Utilize Solar Energy Third Generation PV Technologies Week 6.1 Arno Smets ` (Source: NASA) Shockley-Queisser limit 100 Other losses Percentage of incident 75 Relaxation light energy Below-bandgap
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(Source: NASA)
75 50 25
Bandgap (eV)
Shockley-Queisser limit
Percentage of incident light energy
1 3 2 100
Usable electric power Below-bandgap photons Relaxation to band edges Other losses
Limitations
Single bang gap energy “Excess energy” V C
Limitations
Single bang gap energy 1-Sun irradiance
Limitations
Single bang gap energy 1-Sun irradiance One e-h pair per photon
Limitations
Single bang gap energy 1-Sun irradiance One e-h pair per photon No use of photon with E<Egap
Limitations
Single bang gap energy 1-Sun irradiance One e-h pair per photon No use of photon with E<Egap Single population of e and h V C
Limitations Opportunities
Single bang gap energy 1-Sun irradiance One e-h pair per photon No use of photon with E<Egap Single population of e and h
Multijunction
“Excess energy” V C “Excess energy” V C
Limitations Opportunities
Single bang gap energy 1-Sun irradiance One e-h pair per photon No use of photon with E<Egap Single population of e and h Multijunction Concentrator Solar Cells
Limitations Opportunities
Single bang gap energy 1-Sun irradiance One e-h pair per photon No use of photon with E<Egap Single population of e and h Multijunction Concentrator Solar Cells Down Conversion Multiple Exciton Generation
Limitations Opportunities
Single bang gap energy 1-Sun irradiance One e-h pair per photon No use of photon with E<Egap Single population of e and h Multijunction Concentrator Solar Cells Down Conversion Multiple Exciton Generation Up Conversion
Limitations Opportunities
Single bang gap energy 1-Sun irradiance One e-h pair per photon No use of photon with E<Egap Single population of e and h Multijunction Concentrator Solar Cells Down Conversion Multiple Exciton Generation Intermediate Band Solar Cells Hot Carrier Solar Cells Up Conversion
Opportunity: down conversion
versus
c v e- h+ e- h+ c v e- h+
Opportunity: Multiple Exciton Generation
e- h+ e-
heat
C V
e- h+ e- h+
Ephoton>2Egap
h+ e-
C V C V versus
Quantum Dots
CB VB
1Pe 1Se 1Sh 1Ph
Eg CB VB 2 nm 6 nm
Down conversion: based on QDs
CB 1 3 3 2 Si NC Si NC CB VB VB
3 3 2 1
Process:
Down conversion: based on QDs
CB 1 2 Si NC Si NC CB VB VB
2 1
Process:
Down Conversion in QDs structures
Jursberg et al, Appl. Phys. Lett. 233116 (2008)
Multiple Exciton Generation in QDs structures
Semonin et al., Science 334, 1530 (2011).
Opportunity: up conversion
versus
c v e- h+ c v
Opportunity: intermediate band solar cell
Conduction band v e- h+ Valence band
Opportunity: intermediate band solar cell
Conduction band v e- h+ Valence band v e- h+ e- h+ Intermediate band
Opportunity: Intermediate band solar cells
metallic Built-in field Band-edge engineering
Conduction Band Intermediate Band Valence Band
1 3 2 Efn Efi Efp
Opportunity: Intermediate band solar cells
qV
IB-material
n p +
Hot Carrier Solar Cell
EBG
hot electron and hole Energy distributions
Hot Carrier Solar Cell
EBG
hot electron and hole Energy distributions
qV qV > qEgap
Hot Carrier Solar Cell
EBG
electron contact hot electron and hole Energy distributions Selective energy contacts
Hot Carrier Solar Cell
EBG
electron contact hot electron and hole Energy distributions hole contact Selective energy contacts
Hot Carrier Solar Cell
EBG
electron contact hot electron and hole Energy distributions hole contact Selective energy contacts
qV qV > qEgap
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(Source: NASA)