Super-Efficient Power Semiconductors Jason Hsu , Sr. Application - - PowerPoint PPT Presentation

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Super-Efficient Power Semiconductors Jason Hsu , Sr. Application - - PowerPoint PPT Presentation

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Super-Efficient Power Semiconductors Jason Hsu , Sr. Application Engineer Content Qspeed Semiconductor Introduction The Advantage of Qspeed Diode in CCM PFC - Q Series Diode - X Series Diode Why Can Qspeed Diode Compete

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Super-Efficient Power Semiconductors

Jason Hsu 許元豪, Sr. Application Engineer

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Qspeed Semiconductor Confidential

2007/11/19 2

Content

Qspeed Semiconductor Introduction The Advantage of Qspeed Diode in CCM PFC

  • Q Series Diode
  • X Series Diode

Why Can Qspeed Diode Compete Against SiC Diode

  • Qspeed Unique High Technology in Silicon Process
  • Fatal Defect in SiC Wafer

Future Product Roadmap

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  • 1. Qspeed Semiconductor Introduction
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Qspeed Semiconductor Confidential

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The Power Density Race Is Accelerating

Power Density = Output Power ÷ Size

– Example: 550 Watts ÷ 52 cubic inches = 11 Watts per Cubic Inch

In 2003 the blade server power supply shown below offered 550 Watts

  • f energy in 52 cubic inches for PD = 11 W/in3

In 2005 the same space was used to deliver 700 W for 13 W/in3 This year 2007 power supply companies must deliver 1000 W in same space -24 W/in3 R&D groups around the world now working to achieve 40 W/in3

Power Density (W/cu in)

11 12 13 19 24 29 35

5 10 15 20 25 30 35 40 2002 2004 2006 2008 2010 W atts per Cubic Inch

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  • 2. The Advantage of Qspeed Diode in CCM PFC
  • Q Series Diode
  • X Series Diode
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SMPS Function Block

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Power Semi’s are the Key to Energy Efficiency

Memory Memory CPU Media Displays

A C B D D

The largest cause of energy loss in a power supply is due to the power semiconductor components. Qspeed Semi will address these component needs, with the Q-Series PFC Rectifier being just the first…

A

The Q-Series PFC Rectifier

The Flow of Power in an AC-DC Power Supply From Wall to Load

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Why Should We Need PFC ? 1/2

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Why Should We Need PFC ? 2/2

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Control Methods for Active Power Factor Correction

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DCM PFC Inductor Current

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CCM PFC Inductor Current

diode

I

mosfet

I

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Power Diode Switching Behavior

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Additional Switching Current Spike Caused by Diode Qrr

Current Spike Induced by Qrr Current Spike Induced by RCD Snubber

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Power MOSFET Switching Behavior

Current Spike Induced Addition Switching Loss

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PFC Diode Reverse Recovery Efficiency

  • The area under the zero

line represents energy and charge stored in the diode (Qrr). Less is better.

  • This “reverse recovery

energy” flows through the FET during turn on causing low efficiency.

  • Compared to traditional

ultrafast diodes, Q-series Rectifiers:

– Reduce the temp of the PFC FET by 5 to 10°C. – Improve efficiency up to 2% – Improve power density up to 10%. – Generate less noise

Bridge

L1

+

Control AC IN Filter HV OUT PFC DIODE

  • Reverse Recovery Current @ 400V, 5A,

200A/us, 125C

  • 8
  • 7
  • 6
  • 5
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  • 3
  • 2
  • 1

1 2 3 4 5 6 7 8 40 50 60 70 80 90 100 110 120 130 140 150 160 170 t(ns) IF(A)

Q-Series SiC Snappy Type Std ultrafast

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Q-Series has lowest EMI of all UF rectifiers:

Qspeed 8A LQA08TC600 7JW12 #2375 Champion PFC Eval. Rev1. Bd#A 120VAC, 400W, 30 Min. Soak FCC15 Class A Neutral

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…including SiC:

Cree SiC 10A CSD10060A #A Champion PFC Eval. Rev1. Bd#A 120VAC, 400W, 30 Min. Soak FCC15 Class A Neutral

8dB more EMI than Q-Series

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Qrr v.s. Tj for Various Technologies:

QRR (nC) vs. TJ (Junction Temperature) IF = 8A, dI/dt=-200A/us, VR=-400V

10 20 30 40 50 60 70 80 90 100

0 C 10 C 20 C 30 C 40 C 50 C 60 C 70 C 80 C 90 C 100 C 110 C 120 C 130 C 140 C 150 C 160 C

TJ Qrr in nC

Cree CSD10060 ST - TANDEM STT806DTI Q Speed LQA08TC600 Fairchild RHRP860

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Q-Series Forward Losses Improve with Temperature

Forward Voltage vs. Junction Temperature

1 1.2 1.4 1.6 1.8 2 2.2 2.4

0 C 20 C 40 C 60 C 80 C 100 C 120 C 140 C

Tj

Vf (V) at 5A

Cree Q-Series

So the losses versus temperature tend to balance…

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Q-Series Diode Test Example – (1)

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Q-Series Diode Test Example – (2)

  • Customer test report comparing

SiC diode from Cree with Qspeed: – Efficiency is within 0.2% – MOSFETs run 4.5°C cooler with Qspeed – Almost all other components run cooler with Qspeed

  • This customer was paying

$4.00 for Cree SiC diodes. Qspeed would be <<$2.00.

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Q-Series Diode Test Example – (4)

1KW Power Supply @ the following conditions

  • PS2 Mechanical Size
  • 90VAC/50HZ Line Input
  • 67 KHz Synchronized Frequency in PFC and PWM,
  • 4 pcs SPW20N60C3 in PFC Stage (no snubber circuit)
  • Tamb = 25 degreeC

LQA08TC600 RHRP1560 Tcase, diode 73℃ 92℃ Tcase, FET 71℃ 93℃ Reduce PFC MOSFET to 3 pcs SPW20N60C3

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Q-Series Diode Test Example – (5)

50” PDP Power Board

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STTH12R06 + Lossless ZVS Sbubber

PFC MOSFET#1 PFC MOSFET#2 Snubber Diode PFC Diode PWM Transformer PFC Choke & Snubber Choke Bridge Rectifier PWM MOSFET

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PFC MOSFET#1 PFC MOSFET#2 PFC Diode PWM Transformer PFC Choke Bridge Rectifier PWM MOSFET

LQA08TC600 without Any Snubber

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X-Series Rectifiers

Designed to be a direct drop-in replacement for ST “Tandem” ultrafast rectifiers Similar VF characteristics, but better than ST at 25°C Similar Qrr values Much softer recovery

– Straightforward replacement – Fewer noise problems – Can eliminate snubbing

Cost: Significantly Lower Sampling Q1, 2007

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Direct Replacement with Qspeed Rectifiers

Currently using: Replace with: Result: Silicon Carbide Rectifiers Q-Series Same efficiency, much lower cost

(simple drop-in direct replacement)

Tandem with snubbers Q-Series* +0.5% efficiency, lower cost

(*no snubber required)

Tandem w/o snubbers X-Series Same or higher efficiency, lower cost

(simple drop-in direct replacement)

Std ultrafast with snubbers Try X-Series*

  • r Q-Series*

+2% efficiency, lower cost

(*no snubber required)

Std ultrafast w/o snubbers

Don’t bother The super-cheap market is unprofitable, and will decline soon

1 2 3 4

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Qspeed PFC Product Family

Products targeted to match the needs of the power level and topology:

Power level 75-150W 125-200W 200-400W 400-800W 600-1kW 800- 1.5kW Operating mode DCM DCM CCM or DCM CCM CCM CCM 600V

Q-Series

3A LQA03TC600 5A LQA05TC600 8A LQA08TC600 15A LQA15AC600

600V

X-Series

1A LXA01T600 4A LXA04T600 6A LXA06T600 8A LXA08T600 15A LXA15T600 20A LXA20T600

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  • 4. Future Product Roadmap
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Memory Memory CPU Media Displays

A C B D D The Flow of Power in an AC-DC Power Supply From Wall to Load

Qspeed Semiconductor’s Product Roadmap

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Qspeed Semiconductor’s Impact on Power Efficiency

+3.0% +2.0% +6.0% +4.0% +1.0% +0.5%

Power Supply Efficiency Gain

New, Super-Efficient Output Rectifier Technology

B

0.5- 1.0%

Super-Efficient 600V PFC & PDP Rectifiers

A

0.5- 2.0%

Super-Efficient PFC FET

D

2-5%

New, Super-Efficient Input Rectifier Bridge Technology

C

0.5- 1.0%

Qspeed Semiconductor’s technology will help power supply mfr’s boost their energy efficiency by more than 5 points:

Now Sampling, Production in Q4

+5.0%

Sampling Q1-Q2 2007

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End of Presentation – Thank You!

Contacts:

Jason Hsu, Sr. Application Engineer, Asia Email: jason@qspeed.com Taine Wu, Sales Director, Asia Email: taine@qspeed.com