Quantum Information with Solid-State Devices
VO 141.A55 SS2016
- Dr. Johannes Majer
Quantum Information with Solid-State Devices VO 141.A55 SS2016 - - PowerPoint PPT Presentation
Quantum Information with Solid-State Devices VO 141.A55 SS2016 Dr. Johannes Majer Lecture 7 Next Lecture May 23rd @ Resselpark W IENER P HYSIKALISCHES K OLLOQUIUM TU-W IEN - U NIVERSITT W IEN SS 2016 Einladung zum Vortrag von Ignacio
WIENER PHYSIKALISCHES KOLLOQUIUM
TU-WIEN - UNIVERSITÄT WIEN SS 2016 Einladung zum Vortrag von
Ignacio Cirac
Max-Planck-Institut für Quantenoptik München
Quantum optics with emitters in waveguides
Recent progress in nano-fabrication and atomic physics has allowed to couple atoms (or
framework to describe some of those experiments using both a master equation and a path integral approach; (ii) the existence of many-photon bound states in the presence
using strong coupling and collective effects.
(ab 17 Uhr Kaffee)
TU Wien-Freihaus, Wiedner Hauptstrasse 8 – 10 1040 Wien Hörsaal 5,
http://wpk.univie.ac.at
e - e - e - e - e - e - PMMA/MAA Subst rat e Al Al O2 O2
Al Al
PMMA PMMA PMMA
!1 !0.5 0.5 1 1.5 2 !1 !0.8 !0.6 !0.4 !0.2 0.2 0.4 0.6 0.8 1 x 10
!3
[1/2 | 0] [(!2!!1)/2 | 2Ec/e] [(!1!!2)/2 | !2Ec/e] Gate Charge ng=(Vg Cg)/e Source Drain Voltage (V)
!1 !0.5 0.5 1 1.5 2 !2 !1.5 !1 !0.5 0.5 1 1.5 2 x 10
!3
[!/Ec("2!"1)+1/2 | 4!/e] [(!/Ec+1/2)("2!"1) | 4!/e+2Ec/e] [!/Ec("1!"2)+1/2 | !4!/e] [(!/Ec+1/2)("1!"2) | !4!/e!2Ec/e] Gate Charge ng=(Vg Cg)/e Source Drain Voltage (V)
C2 C1 C2 C1
1 1 e e
−1 −0.5 0.5 1 1.5 2 −2 −1.5 −1 −0.5 0.5 1 1.5 2 x 10
−3
[κ2(1/2+∆/Ec)−1| 2∆/e + Ec/e] [κ2(3/2+∆/Ec)−1 | 2∆/e + 3Ec/e] [−κ1(1/2+∆/Ec)+1 | 2∆/e + Ec/e] [−κ1(3/2+∆/Ec)+1 | 2∆/e + 3Ec/e] [κ2(1/2+∆/Ec)−1 | −2∆/e − Ec/e] [κ2(3/2+∆/Ec)−1 | −2∆/e − 3Ec/e] [−κ1(1/2+∆/Ec)+1 | −2∆/e − Ec/e] [−κ1(3/2+∆/Ec)+1 | −2∆/e − 3Ec/e] Gate Charge ng=(Vg Cg)/e
C2 C1 C2 C1
2 2 1 2e e
C2 C1
1 e