How to support the access of new users in distributed research infrastructures: a first prototype for It-fab
Lorenza Ferrario, FBK and It-fab
prototype for It-fab Lorenza Ferrario, FBK and It-fab Summary - - PowerPoint PPT Presentation
How to support the access of new users in distributed research infrastructures: a first prototype for It-fab Lorenza Ferrario, FBK and It-fab Summary It-fab outline of the ENL Italian network Building the It-fab technology and
Lorenza Ferrario, FBK and It-fab
Microfabrication 0.8 micron “CMOS like” cleanroom, 500 sq. meters Si-MEMS cleanroom, 100 sq. meters package area Nanofabrication by e- beam lithography Testing Electrical and functional (optic, gas, solar efficiency) on wafer testing, manual and automatic probes Material characterization SIMS ToF-SIMS PTR-MS XPS XRD, XRF SEM+EDX AFM RAMAN
http://mnf.fbk.eu http://cmm.fbk.eu
RF-MEMS Microheaters (for gas sensing) Microresonators
Silicon Photomultipliers Single and Double Side Microstrip
external users Optimized decisions about new equipment Resources DB: Technology Equipment Access and training policies Tariffs Processing: Sensor process flow It-fab partners Temporary backup
Technology Equipment Materials Processes State of the resources Policies Access rules costs ISO class Compatibility rules
Equipment DB Material DB Access Policies Query tool DB direct access Laboratories DB Operation required: Adding/removing/patterning/mea suring/thermal process Starting from: Blank wafer/Processed wafer/Other item (sample, wafer quarter,…) Item history: what seen before? What on the top?
Fab
Deposition Processes Modification Processes
Lithographics Mask
http://www.uniprot.org/uniprot/P98161
URI
equipmentId equipmentName processGroup handling forbiddenMaterials furtherInformation state decontaminationProcedures parameters P001L001E003 RTP atmospheric thermal process 4 Au,Cu,Fe,Na,K https://www.bo.imm.cnr.it/unit/articles/clean-room 1 none P001L002E001 Alcatel DRIE DRIE 4 Au,Cu,Fe,Na,K https://www.bo.imm.cnr.it/unit/articles/clean-room 1 ashing P002L001E001 AMS200 DRIE DRIE 6 Au,Cu,Fe,Na,K https://mnf.fbk.eu/infrastructure Available gases: O2, SF6, C4F8, CH4, Ar Pressure ~10E-2 mbar Flows: O2 0-200 sccm; C4F8 0-400sccm; SF6 0-1000 sccm; He 0-200sccm, Ar 0-200 sccm, N2 0-1000 sccm, CH40-100 sccm Source generator 0-3000 W Bias power 0-300 W Chuck temperature -12 - +20 ºC P002L001E002 Tegal903 plasma sample,4,6 https://mnf.fbk.eu/infrastructure 0 chamber and handling cleaning P002L001E003 SPTS PECVD plasma sample,4,6 https://mnf.fbk.eu/infrastructure 1 chamber and handling cleaning P002L001E004 Eclispe MRC IV PVD 6 Au,Cu,Fe,Na,K https://mnf.fbk.eu/infrastructure 1 P002L001E005 Centrotherm OX3 atmospheric thermal process 4,6 Au,Cu,Fe,Na,K https://mnf.fbk.eu/infrastructure 1 P002L001E006 Centrotherm LPCVD TEOS LPCVD 4,6 Au,Cu,Fe,Na,K https://mnf.fbk.eu/infrastructure 1 P002L001E007 Track SVG 8600 coating and developing 6 https://mnf.fbk.eu/infrastructure 2
<it-fabDB xmlsl=https://www.it-fab.org/equipment/….> <id> P002L001E001</id> <equipment> <equipmentUniqueId>P002L001E001</ equipmentUniqueId > <equipmentName>AMS200 DRIE</equipmentName> <equipmentProcessGroup>DRIE</equipmentProcessGroup> <equipmentHandling>6</equipmentHandling> <forbiddenMaterials>Au,Cu,K</forbiddenMaterials> <exendedInfo>mnf.fbk.eu</extendedInfo> <equipmentState>1</equipmentState> <equipmentCleaningProcedures>ashing</equipmentCleaningProcedure> <equipmentParameters> <processGas>O2, SF6, C4F8, CH4, Ar</processGas> <chamberPressure unit=”mBar”> 10e-2</chamberPressure> <sourceGeneratorPowerMin unit=”W”>0</sourceGeneratorPowerMin> <sourceGeneratorPowerMax unit=”W”>3000</sourceGeneratorPowerMax> <biasPowerMin unit=”W”>0</biasPowerMin> <biasPowerMax unit=”W”>300</biasPowerMax> <chuckTemperatureMin unit=”oC”>-12</chuckTemperatureMin> <chuckTemperatureMax unit=”oC”>20</chuckTemperatureMax> </equipmentParameters> </equipment>