QS-2017-30 MMIC Technologies Drive New Trends in Phased Array RADAR Ha Haluk Tanik Vic Vice Presid sident, Sale ales s & Mar arketin ing, ar arQan ana a Technolo logie ies February 2020 CONFIDENTIAL
◉ In Introduct ctio ion ◉ Phased Array RADAR Trends ◉ AESA RF Front End Architecture ◉ Choosing the Right Amplifiers
arQana Technologies We are a fabless design house that develops Monolithic Microwave Integrated Circuit ( MMIC ) solutions for wireless communications, with a focus on phased array systems
◉ Introduction ◉ Ph Phas ased ed A Array ay R RADAR T Tren ends ◉ AESA RF Front End Architecture ◉ Choosing the Right Amplifiers
History of Phased Array Systems 1905, Transmission 1995, First 2005, CMOS of radio Military 24 GHz Ground-Based Phased Array 2016, GaN waves in one based AESA direction AESA Transmitter World War II, 2004, First 2007, 16 Steerable integrated Si- Element Radar for based phased Phased Array Ground array Antenna on a controlled single Silicon Approach Chip Passive Active Digital
Active Electronically Scanned Array ( AESA ) Size Weight Power Cost SWaP-C
Market Segmentation by RF Technologies ◉ GaN technology to be the fastest growing at a CAGR of 19% ◉ GaAs will keep strong and stable technology of choice among years ◉ Vacuum tube parts (TWT) will have a CAGR of -4.8% as they will be replaced by solid state components with years.
Semiconductor Technologies Po Power (W (W) Klystron/Vacuum Tube 1000 1000 100 100 SiC GaN SiGe 10 10 Silicon GaAs InP Fr Frequency 100 100 1 10 10 Source: Based on Strategy Analytics (GHz (GHz) Materials Advantages GaAs Gallium High thermal stability, low noise, resistance to radiation Arsenide GaN Gallium High power output at high frequency, high thermal stability Nitride SiC Silicon Carbide High power and high voltage switching power applications
◉ Introduction ◉ Phased Array RADAR Trends ◉ AES AESA A RF Fron ront En End Arc Architec ecture re ◉ Choosing the Right Amplifiers
Transceiver Architecture (RADAR) Transmitter Array High power – 100’s W to 1’s MW Receiver Low Power – n W to u W
Transceiver Architecture (SATCOM) Up/Down Converter Front End
arQana MMICs for Phased Array Systems
◉ Introduction ◉ Phased Array RADAR Trends ◉ AESA RF Front End Architecture ◉ Ch Choosi oosing the Right Am Amplifi fiers rs
Choosing the Right components Power Amplifier (PA) and Driver Amplifier (DA) Frequency Range Gain Output Power – Psat, P1dB Power Added Efficiency (PAE) Type of Signal: Pulsed VS CW Linearity – P1dB, OIP3
S-band 60 Watts PA, AAG4201-QA ◉ Bandwidth: 2.7-3.5 GHz ◉ Output power: >60 W at 10% duty cycle ◉ Large signal gain: >28 dB ◉ Large pulse width of operation: 300 us ◉ Power gain: >22 dB ◉ High PAE: ≈ 50% with frequency >3 GHz arQana ◉ Low I DQ : 400 mA ◉ Small package: 40-Pin QFN 6 x 6 mm Package AAG4201-QA with Evaluation Board
S-band 2 Watts DA, ADA4200-QA ◉ Bandwidth: 2.7 – 4 GHz ◉ Small signal gain: 24 dB ◉ Output saturated power: 33 dBm, 2 W ◉ Gain Control & Power Detector ◉ Output P1dB: 31 dBm arQana ◉ Output IP3: 43 dBm ◉ PAE: >25% ADA4200-QA with Evaluation Board
X-band 4 Watts PA, AAA4401-QA ◉ Bandwidth: 9 – 11 GHz ◉ Small signal gain: 26 dB ◉ Output saturated power: >36 dBm ◉ Output P1dB: >34 dBm ◉ Output IP3: 45 dBm arQana ◉ PAE: >25% ◉ Pulsed and CW AAA4401-QA with Evaluation Board
Choosing the Right components Low Noise Amplifier (LNA) Frequency Range Noise Figure Gain Output Power – Psat, P1dB Power Added Efficiency (PAE) Type of signal: Pulsed VS CW Linearity – P1dB, OIP3
Collaboration with A*STAR Dron Dr one De Detection on Radar 5G B 5G Base S Stations SATCOM on the Move SA Highl Hi hly Int Integ egrated ed MMIC ICs to Opt ptimi mize e Swap-C
Contact Us Haluk Tanik ◉ Vice President, Sales & Marketing ◉ sales@arqana-tech.com MMI MMIC solutions you ca can Tru Trust contact@arqana-tech.com
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