MMIC Technologies Drive New Trends in Phased Array RADAR Ha Haluk - - PowerPoint PPT Presentation

mmic technologies drive new trends in phased array radar
SMART_READER_LITE
LIVE PREVIEW

MMIC Technologies Drive New Trends in Phased Array RADAR Ha Haluk - - PowerPoint PPT Presentation

QS-2017-30 MMIC Technologies Drive New Trends in Phased Array RADAR Ha Haluk Tanik Vic Vice Presid sident, Sale ales s & Mar arketin ing, ar arQan ana a Technolo logie ies February 2020 CONFIDENTIAL In Introduct ctio ion


slide-1
SLIDE 1

MMIC Technologies Drive New Trends in Phased Array RADAR

February 2020

CONFIDENTIAL

QS-2017-30

Ha Haluk Tanik Vic Vice Presid sident, Sale ales s & Mar arketin ing, ar arQan ana a Technolo logie ies

slide-2
SLIDE 2

◉ In Introduct ctio ion ◉ Phased Array RADAR Trends ◉ AESA RF Front End Architecture ◉ Choosing the Right Amplifiers

slide-3
SLIDE 3

arQana Technologies

We are a fabless design house that develops Monolithic Microwave Integrated Circuit (MMIC) solutions for wireless communications, with a focus on phased array systems

slide-4
SLIDE 4

◉ Introduction ◉ Ph Phas ased ed A Array ay R RADAR T Tren ends ◉ AESA RF Front End Architecture ◉ Choosing the Right Amplifiers

slide-5
SLIDE 5

History of Phased Array Systems

1905, Transmission

  • f radio

waves in one direction World War II, Steerable Radar for Ground controlled Approach 1995, First Military Ground-Based AESA 2004, First integrated Si- based phased array 2005, CMOS 24 GHz Phased Array Transmitter 2007, 16 Element Phased Array Antenna on a single Silicon Chip 2016, GaN based AESA

Passive Active Digital

slide-6
SLIDE 6

Active Electronically Scanned Array (AESA)

Size Weight Power Cost

SWaP-C

slide-7
SLIDE 7

Market Segmentation by RF Technologies

◉ GaN technology to be the fastest growing at a CAGR of 19% ◉ GaAs will keep strong and stable technology of choice among years ◉ Vacuum tube parts (TWT) will have a CAGR of -4.8% as they will be replaced by solid state components with years.

slide-8
SLIDE 8

Materials Advantages GaAs Gallium Arsenide High thermal stability, low noise, resistance to radiation GaN Gallium Nitride High power output at high frequency, high thermal stability SiC Silicon Carbide High power and high voltage switching power applications

InP

Fr Frequency (GHz (GHz)

Po Power (W (W)

1 10 10

100 100

10 10 1000 1000 Silicon SiC Klystron/Vacuum Tube GaAs GaN

Source: Based on Strategy Analytics

Semiconductor Technologies

100 100 SiGe

slide-9
SLIDE 9

◉ Introduction ◉ Phased Array RADAR Trends ◉ AES AESA A RF Fron ront En End Arc Architec ecture re ◉ Choosing the Right Amplifiers

slide-10
SLIDE 10

Transceiver Architecture (RADAR)

Transmitter Array High power – 100’s W to 1’s MW Receiver Low Power – nW to uW

slide-11
SLIDE 11

Transceiver Architecture (SATCOM)

Up/Down Converter Front End

slide-12
SLIDE 12

arQana MMICs for Phased Array Systems

slide-13
SLIDE 13

◉ Introduction ◉ Phased Array RADAR Trends ◉ AESA RF Front End Architecture ◉ Ch Choosi

  • osing the Right Am

Amplifi fiers rs

slide-14
SLIDE 14

Choosing the Right components

Frequency Range Gain Output Power – Psat, P1dB Power Added Efficiency (PAE) Type of Signal: Pulsed VS CW Linearity – P1dB, OIP3

Power Amplifier (PA) and Driver Amplifier (DA)

slide-15
SLIDE 15

arQana

AAG4201-QA with Evaluation Board

◉ Bandwidth: 2.7-3.5 GHz ◉ Output power: >60 W at 10% duty cycle ◉ Large signal gain: >28 dB ◉ Large pulse width of operation: 300 us ◉ Power gain: >22 dB ◉ High PAE: ≈ 50% with frequency >3 GHz ◉ Low IDQ: 400 mA ◉ Small package: 40-Pin QFN 6 x 6 mm Package

S-band 60 Watts PA, AAG4201-QA

slide-16
SLIDE 16

arQana

ADA4200-QA with Evaluation Board

S-band 2 Watts DA, ADA4200-QA

◉ Bandwidth: 2.7 – 4 GHz ◉ Small signal gain: 24 dB ◉ Output saturated power: 33 dBm, 2 W ◉ Gain Control & Power Detector ◉ Output P1dB: 31 dBm ◉ Output IP3: 43 dBm ◉ PAE: >25%

slide-17
SLIDE 17

arQana

AAA4401-QA with Evaluation Board

X-band 4 Watts PA, AAA4401-QA

◉ Bandwidth: 9 – 11 GHz ◉ Small signal gain: 26 dB ◉ Output saturated power: >36 dBm ◉ Output P1dB: >34 dBm ◉ Output IP3: 45 dBm ◉ PAE: >25% ◉ Pulsed and CW

slide-18
SLIDE 18

Choosing the Right components

Frequency Range Noise Figure Gain Output Power – Psat, P1dB Power Added Efficiency (PAE) Type of signal: Pulsed VS CW Linearity – P1dB, OIP3

Low Noise Amplifier (LNA)

slide-19
SLIDE 19

Collaboration with A*STAR

Hi Highl hly Int Integ egrated ed MMIC ICs to Opt ptimi mize e Swap-C

Dr Dron

  • ne De

Detection

  • n Radar

5G 5G B Base S Stations SA SATCOM on the Move

slide-20
SLIDE 20

Contact Us

MMI MMIC solutions you ca can Tru Trust

Haluk Tanik ◉Vice President, Sales & Marketing ◉sales@arqana-tech.com

contact@arqana-tech.com