Manufacturer of High Speed, Precision Electrolytic Plating Equipment - - PowerPoint PPT Presentation

Manufacturer of High Speed, Precision Electrolytic Plating Equipment & Technology Development

Leslie Derrig, Vice President of Sales & Marketing

1960 Audio Matrix Optical Disc 1995 Audio Matrix Purchased 1995 Renamed to Digital Matrix 1997 Renamed Digital Matrix Corp 1 9 9 7 I n t r

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• Located in New York, 10 mins. from JFK
• Installations in over 28 Countries
• 13 Offices & Agents World-Wide
• Over 178 Customers
• 28 employees (12 Engineers)
• Design & Integrator of Plating Components

Manufacturer of High Speed, Precision Electrolytic Plating Equipment & Technology Development

More about us More about us… ….. ..

• Industries we service:

Industries we service:

• Diffusers

Diffusers

• Sensors

Sensors

• Bio

Bio-

• Tech

Tech

• Holography

Holography

• Optical Disc

Optical Disc

• Photo Voltaics

Photo Voltaics

• Circuit Boards

Circuit Boards

• Semiconductors

Semiconductors

• Back Light Panels

Back Light Panels

• Flat Panel Displays

Flat Panel Displays

• Refractive Reflectors (LED)

Refractive Reflectors (LED)

• MEMS & Nano (LIGA)

MEMS & Nano (LIGA)

• Organic Light Emitting Diodes (OLED)

Organic Light Emitting Diodes (OLED)

Focus on the Environment Focus on the Environment

• Everything we build and design, we focus

Everything we build and design, we focus

• n the effects of the environment
• n the effects of the environment
• We never want to create a chemical

We never want to create a chemical process that is hazardous to the process that is hazardous to the environment or the people who use it. environment or the people who use it.

• Much longer to plate (approximately 10x’s longer) Low Speed
• Limitation of thickness applications: no more than approx. 100 ums.
• Chemicals need to be replenished after each plating and short

lifetime of bath solution (thrown away)

• No control of TTV (thickness variation)
• Bath chemistry weakens during plating process
• Plated area has limited consistency of properties
• Metal deposits on hard on the substrate and softer on top

Electroless Plating Electroless Plating

Inconsistent Metal Deposition Plating over structure Structure Substrate

• Fast plating time -10 X’s faster than Electroless
• No limited thickness for metal applications: TTV can range from < 0.1

μm to 1000 μms

• Controlled thickness variation (TTV) within a 1% of requirement
• Bath Chemicals are easily balanced & maintained and will last for

years

• Harder plated area and consistent from top to bottom
• No over plating to achieve height of plating
• No need to slurry over-plating –saves on Au and other precious

metals

Electrolytic Plating Electrolytic Plating

Substrate Consistent Metal Deposition Conductive Layer-Cu or Au Ti or Cr Layer

Structure (metal, photo resist, etc)

Electroplating Features Pumps: ¾ hp per cell Rectifiers: 100A standard (process dependant) Filtration: 2-Stage Pre & Final Flow Rate: Up to 50lp/min per cell Heaters: 6 kW Fabrication: Polypropylene Sump: One sump (unless individual sumps requested) Workholders: Various Applications and holders available + Features: Electrocleaning Electrocleaning: Anodic/Cathodic Passivation: Cathodic/Anodic Spin Dry: 2 Sided spin dry

Various Combinations of Plating Systems Various Combinations of Plating Systems

DIGITAL MATRIX Workholders DIGITAL MATRIX DIGITAL MATRIX Workholders Workholders

Our workholders are designed to remain on the shafts. Parts are removed and quickly reloaded over the plating solution, eliminating chemical drag-out. Plating repeatability is simple and more accurate when plating heads are not constantly removed

Obtain precise results in record time

The Universal Workholder allows for various size wafers to be plated from one workholder Parts are easily loaded, locked into the workholder and ready to plate in seconds!

• Sizes of inserts can vary from 2” to

12” wafers.

• Precise thickness can be within +/-

1µm or less depending on thickness.

• High-Speed plating 4 to 5 x’s faster

than conventional plating

• No stress and No use of organics
• Back-side mirror or rough finish
• Total Thickness Variation within 1%

& 5% on thicknesses under 10 μms

Wafer Inserts

• Rotating 45 º Cathode Head - Yields Uniform Deposition
• Eliminates Voids
• Easy Load and Unload

Holds various size wafers (this one is for 300 mm Si Wafer) Ring size changes to accommodate various size wafers on same workholder Wafer and ring are vacuum sealed; preventing plating solution to reach the back

• f the wafer and creating

contact around the edge

• f the wafer

Vacuum Seal Workholder Vacuum Seal Workholder

Precise Uniformity Means:

• Grow to accurate and repeatable

height above PR or mask

• High Aspect Ratio and Non-

Uniform Structures

• Deposition Can Grow Straight

(minimal mushrooming effect)

After plating with Digital Matrix

4 5 6

Conductive seed layer

Substrate

PR

1 2 3

Conductive seed layer

Substrate

Can plate angles, deep side walls, TSV’s and vias

DM is capable of plating structures: DM is capable of plating structures:

Cu Au Pr Au Si0 2 Si

20um 50um 1.5mm

An even more unique Digital Matrix proprietary process An even more unique Digital Matrix proprietary process that offers multiple opportunities when using an that offers multiple opportunities when using an electroforming process that most would not have electroforming process that most would not have considered in the past. The resulting structure can be a considered in the past. The resulting structure can be a 3 3-

• D part that can be removed from the wafer. The

D part that can be removed from the wafer. The structure etched into the photoresist can be prismatic or structure etched into the photoresist can be prismatic or

• ctagonal in shape and carry the shape up 20 microns
• ctagonal in shape and carry the shape up 20 microns

above the photoresist, or it can create a bump over the above the photoresist, or it can create a bump over the PR without a mushroom affect. PR without a mushroom affect.

Bump & 3 Bump & 3-

• D Plating

D Plating

Sidewall Deposition is Made Stronger Sidewall Deposition is Made Stronger

• In the past, it was nearly impossible to plate

In the past, it was nearly impossible to plate parallel posts (rods). DM parallel posts (rods). DM’ ’s technology and s technology and equipment forces the metal ions into the equipment forces the metal ions into the sidewalls giving strength to the structures for sidewalls giving strength to the structures for mass production. mass production.

Now Then

Photo Resist Metal Plating Wafer

Example: a structure 100 microns wide will fill equal to the same height as another structure on the same wafer that is 10 microns wide. There is no over plating on the 10 micron wide structure and no dip on the 100 micron structure

Plate up and fill the structures at Plate up and fill the structures at the same rate. the same rate.

Achieve Exact Thickness Achieve Exact Thickness

If a wafer to be plated has structures that are 290 If a wafer to be plated has structures that are 290 microns tall, the plating needs to be exactly 290 microns microns tall, the plating needs to be exactly 290 microns

• thick. This can now be done through our advanced
• thick. This can now be done through our advanced

process on our equipment. There is no need for process on our equipment. There is no need for backsanding or slurrying the excess to achieve the backsanding or slurrying the excess to achieve the desired thickness. This alleviates the risk of damaging desired thickness. This alleviates the risk of damaging the delicate structures and brings down the cost of time the delicate structures and brings down the cost of time & production. & production.

Photo Resist Metal Plating Wafer

TSE So. Korea

TSE So. Korea

TSE So. Korea

KITECH So. Korea

Resister Applications

KAIST So. Korea

SEM micrographs SEM micrographs from the GC Wafer from the GC Wafer

Electroformed Ni structures. Electroformed Ni structures. PMMA & SU PMMA & SU-

• 8 Removed

8 Removed In co In co-

• operation with LSU
• peration with LSU-
• CAMD &

CAMD & Digital Matrix Corp Digital Matrix Corp

G C Channels

1

BP010808 BP010808-

• 3 Wafer QC

3 Wafer QC – – Post Au Etch Post Au Etch

3

BP010808 BP010808-

• 3 Wafer QC

3 Wafer QC – – Post Au Etch Post Au Etch

Achieving Micro Holes (clear thru) Achieving Micro Holes (clear thru) Diffuser Diffuser These holes range from 1 These holes range from 1µ µm to 100 m to 100µ µm m

Thank You! Thank You!

Contact: Contact: Leslie Derrig: Leslie Derrig: Vice Pres Worldwide Sales & Marketing Vice Pres Worldwide Sales & Marketing Direct Tel: Direct Tel: +1 +1-

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• Dr. Anatoly Kuzmin: Senior Process Engineer
• Dr. Anatoly Kuzmin: Senior Process Engineer

Tel: Tel: +1 +1-

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