SLIDE 64 d–f, The same data for the OPV3 device used for Figs 1 and 3. The data in d,e,f demonstrate that bias- driven electronic heating is also detectable in junctions that show optical pumping and bias-driven vibrational heating.
Electronic heating under bias. a, Effective temperature (blue; left axis) and dissipated electrical power (red; right axis) versus bias voltage V in a nominally bare device. Error bars are described in the text. Inset: current/voltage curves for this
- device. Error bars are described in
the text. b,c, Raman response shown as a Raman signal (in CCD counts) as a function of voltage and Raman shift (b), and as the Raman intensity (in CCD counts) as a function of Raman shift (c) at three different voltages (blue lines); the green lines are best fits to the data given by equation (2). Only the anti- Stokes signals are shown in b and c. This device shows no molecular Raman peaks, and is considered a ‘clean’ junction. Ward et al, J. Phys. Chem. Lett. 2011, 2, 2110–2113