IRST SiPM characterizations and Application Studies G. Pauletta for - - PowerPoint PPT Presentation

28 June 2007

• G. Pauletta: PD07, Kobe, Japan

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IRST SiPM characterizations and Application Studies

• G. Pauletta

for the

FACTOR

collaboration

Outline

• 1. Introduction (who and where)
• 2. Objectives and program (what and how)
• 3. characterizations
• 4. Applications

28 June 2007

• G. Pauletta: PD07, Kobe, Japan

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FACTOR 3-year project (2007 – 2009) funded by INFN Participants: INFN laboratories and/or universities at:Trieste, Udine, Messina collaborating with ITC (now Bruno Kessler Foundation) -IRST Trento, Italy

Background: 2005: INFN funds project (DASiPM) for the development of SiPM devices, mainly for PET application 2007: INFN funds continuation of DASIPM and expands development to other applications (FACTOR) INFN-Trieste has a long – standing collaboration with IRST in the development

• f Silicon-based detectors for application in accelerator, underground and space –

based experimental particle physics.

28 June 2007

• G. Pauletta: PD07, Kobe, Japan

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Motivations

The FACTOR collaboration interested in the development of the device and in its optimization for application to:

Present application interests:

• Calorimetry with fiber-based optical readout
• Large – area scintillator – based muon counters
• Scintillating fiber – based tracking
• future space experiments for detection of UHECR
• FEL studies and instrumentation
• future large – area, ground – based x-ray telescopes

Action Plan:

• comparative studies for detailed understanding of device characteristics
• Application tests
• Optimization of properties as a function of application

28 June 2007

• G. Pauletta: PD07, Kobe, Japan

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13 14 15 16 17 18 19 20 0.2 0.4 0.6 0.8 1 1.2 1.4 depth (um) Doping conc. (10^) [1/cm^3] 0E+00 1E+05 2E+05 3E+05 4E+05 5E+05 6E+05 7E+05 E field (V/cm) Doping Field

n+ p

Shallow-Junction SiPM

p+ subst. π epi n+

*C. Piemonte “A new Silicon Photomultiplier structure for blue light detection” NIMA 568 (2006)

Present IRST technology*

Distinguishing characteristics:

1) Very shallow junction 2) ARC optimized for short wavelenghts (~400nm) 3) polysilicon quenching resistors

28 June 2007

• G. Pauletta: PD07, Kobe, Japan

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Development History

Development started at the beginning of 2005 Baseline geometry SiPM structure:

• 25x25 cells
• microcell size: 40x40mm2

Development has continued

• ver last two years: several

succeeding production runs to to develop geometries for different applications

Geometry of baseline model NOT optimized formaximum PDE ( fill factor ~20%) . 1mm 1mm

and to optmize operational characteristics

28 June 2007

• G. Pauletta: PD07, Kobe, Japan

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Principal characteristics of interest

• Gain
• Noise

dark count afterpulsing

• ptical cross-talk
• PhotoDetection Efficiency (PDE)
• Dynamic Range
• Time characteristics

rise – time, resolution, recovery time

• Radiation hardness
• Sensitivity to magnetic fiels

Other considerations

• Packaging
• Readout electronics

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• G. Pauletta: PD07, Kobe, Japan

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Device characterization1,2

• Static measurents: IV measurements for rapid test of

device properties, uniformity and stability

• Dynamic tests: Output signal characterization and

stability using noise signals in the dark Signal rise time and fall time Gain Dark count Optical cross – talk Afterpulsing

• PhotoDetection Efficiency

1)All characterizations reported here are for 1mm2 devices 2) for a thorough characterization of the first SiPM prototypes fabricated at ITC-irst see C. Piemonte, IEEE TNS, February 2007

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• G. Pauletta: PD07, Kobe, Japan

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Static measurements-1

10 20 30 40 100p 1n 10n 100n 1µ

reverse Voltage (V) Current (A)

IRST 00 IRST 02 IRST 08 IRST 11 IRST 03

Ileak VBD Ibd

SiPM Vbd (V) Ibd (nA) IRST-00 32,5 3,6 IRST-02 33,0 3,6 IRST-03 33,0 3,1 IRST-08 33,5 3,2 IRST-11 33,5 3,8

Itot

( ) ( )

, since and . count dark and gain to prop. is current dark

2

V I V DC V G DC G I DC G I I I

dc dc leak tot dc

∝ ∝ ∝ ∝ − =

IRST 1mm2 second batch

Sensitive to principal characteristics Rapid check functionality & uniformity

Baseline version IRST devices generally very uniform

28 June 2007

• G. Pauletta: PD07, Kobe, Japan

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10 20 30 40 50 60 1n 10n 100n 1µ 10µ 100µ

reverse Voltage (V) Current (A)

Blue enhanced 3x3 SiPM PHOT 18 PHOT 19 PHOT 20

SiPM Vbd (V) Ibd (nA) Phot-18 52,5 125,8 Phot-19 49,5 260,6 Phot-20 49,0 98,7 Phot-21 51,0 6,5 Phot-22 53,0 6,9 Phot-23 55,0 6,0

Photonique 9mm2 Blue sensitive

Static measurements-2

10 20 30 40 50 60 70 100p 1n 10n 100n 1µ 10µ

reverse Voltage (V) Current (A)

blue enhanced 1x1 SiPM PHOT 21 PHOT 22 PHOT 23

Photonique 1mm2 Green-red sensitive

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• G. Pauletta: PD07, Kobe, Japan

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Static measurements-3

• 0,2

0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8

• 200,0µ

0,0 200,0µ 400,0µ 600,0µ 800,0µ 1,0m 1,2m 1,4m 1,6m 1,8m

direct Voltage (V) Current (A)

IRST 00 IRST 02 IRST 03 IRST 08 IRST 11

SiPM Rq (Ohm) IRST-00 669 IRST-02 612 IRST-03 619 IRST-08 697 IRST-11 590 SiPM Rq (kOhm) Phot-18 2,29 Phot-19 1,52 Phot-20 1,24 Phot-21 39,8 Phot-22 17,4 Phot-23 37,8

IRST 1mm2 second batch Photonique 9mm2 Blue sensitive Photonique 1mm2 Green-red sensitive

• 1

1 2 3 4 5 6 7 8 9 10 11 0,0 50,0µ 100,0µ 150,0µ 200,0µ 250,0µ

direct Voltage (V) Current (A)

Phot 21 Phot 22 Phot 23

Ω ≈ × k 390 625

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• G. Pauletta: PD07, Kobe, Japan

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6 12 18 24 30 0,0 50,0p 100,0p 150,0p 200,0p 250,0p 300,0p 350,0p 400,0p 450,0p

reverse Voltage (V) Capacitance (F)

IRST 00 IRST 02 IRST 03 IRST 08 IRST 11

Static measurements-4

10 20 30 40 50 45,0p 50,0p 55,0p 60,0p 65,0p 70,0p 75,0p 80,0p 85,0p 90,0p

reverse Voltage (V) Capacitance (F)

Photo 21 Photo 22 Photo 23

SiPM Vdep (V) Cdep (pF) IRST-00 21 54 IRST-02 21 55 IRST-03 21 55 IRST-08 21 55 IRST-11 21 54

fF 90 625 ≈ ÷

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• G. Pauletta: PD07, Kobe, Japan

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dynamic measurements-1

Amplifier used for fast characterization of SiPMs: Agilent ABA-52563 3.5 GHz RFIC Amplifier (economic, compact, internally 50-Ω matched, gain ~ 20 dB) Dimensions 1.8 x 1.8 mm2

Orange trace: input from pulse generator, FWHM = 0.9 ns, tr = tf = 300 ps Red trace: amplifier’s output

28 June 2007

• G. Pauletta: PD07, Kobe, Japan

13 ns M R Formitech

q

400 ime recovery t , 9 . : F1 ≈ Ω ≈

MRS SiPMs have 2.5 to 50 times larger Rq values than IRST (polysilicon) devices longer recovery rimes

dynamic measurements-2

IRST :recovery time ~70 ns

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• G. Pauletta: PD07, Kobe, Japan

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dynamic measurements-4

Linear fit intercept with V-axis gives VBD = 33.04 V 1 mm2 type A VBD ≈ 33 V D.C.(ΔV=2V) ≈ 1.5 MHz

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• G. Pauletta: PD07, Kobe, Japan

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1 mm2 MRS devices VBD ≈ 20 V D.C.(ΔV=2V) ≈ 2 MHz

dynamic measurements-4

1 mm2 MRS device VBD ≈ 41 V D.C.(ΔV=2V) ≈ 2.2 MHz

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• G. Pauletta: PD07, Kobe, Japan

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type “A”, D.C.(ΔV=2V) ≈ 1.5 MHz type “B”, D.C.(ΔV=2V) ≈ 2- 3 MHz type “D”, D.C.(ΔV=2V) ≈ 1 MHz

dynamic measurements-5

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• G. Pauletta: PD07, Kobe, Japan

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dynamic measurements-6

Measurements performed in a climatic chamber (with humidity control) The amplifier was located outside the chamber, connection via a special 18 GHz ft 50 Ω cable

Temperature Dependences - 1

dVBD /dT ≈ 78 mV/C

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• G. Pauletta: PD07, Kobe, Japan

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dynamic measurements-7

Temperature Dependences - 2

dVBD /dT ≈ 72 mV/C

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• G. Pauletta: PD07, Kobe, Japan

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dynamic measurements-8

Temperature dependences - 3

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The following are static measurements performed at ITC-IRST and reported on at a recent (June 13th 2007) workshop at Perugia

28 June 2007

• G. Pauletta: PD07, Kobe, Japan

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Signal properties

Charge spectra – Tint=100ns

• C. Piemonte et al. “Characterization of the first

prototypes of SiPM fabricated at ITC-irst” IEEE TNS, February 2007 100ns 100ns 100ns

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

• 2.0E-09
• 1.5E-09
• 1.0E-09
• 5.0E-10

0.0E+00 Charve (V*s) Normalized Count

T=22oC s d a

Well defined peak of the single pulses.

Gaussian distribution width determined by:

• noise of the system
• tiny gain non-uniformities

Tails due to:

• ptical cross-talk + afterpulse
• C. Piemonte: June 13th, 2007, Perugia

28 June 2007

• G. Pauletta: PD07, Kobe, Japan

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y = -40375x + 2E+06 y = 0.0765x + 28.833 28 28.5 29 29.5 30 30.5 31

• 10

10 20 30 0.00E+00 5.00E+05 1.00E+06 1.50E+06 2.00E+06 2.50E+06 Vbd Gain

G Ampl 0.0E+00 5.0E+05 1.0E+06 1.5E+06 2.0E+06 2.5E+06 3.0E+06 3.5E+06 4.0E+06 28.5 29.5 30.5 31.5 32.5 33.5 34.5 35.5

• 5°C

5°C 15°C 25°C

Gain & Dark count

DC 0.0E+00 5.0E+05 1.0E+06 1.5E+06 2.0E+06 2.5E+06 3.0E+06 1 2 3 4 5 6 7 8 9 10

• 5°C

5°C 15°C 25°C

Performed in the climatic chamber. Devices from the third batch

Dark count Gain VBD (V) Gain

• Temp. (C)

Over-voltage (V) Bias voltage (V)

• C. Piemonte: June 13th, 2007, Perugia

28 June 2007

• G. Pauletta: PD07, Kobe, Japan

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Gain & Dark count (uniformity)

DC 0.0E+00 5.0E+05 1.0E+06 1.5E+06 2.0E+06 2.5E+06 3.0E+06 3.5E+06 4.0E+06 2 4 6 8 Over-voltage (V) Dark Count (Hz) G AMPL 0.0E+00 5.0E+05 1.0E+06 1.5E+06 2.0E+06 2.5E+06 3.0E+06 2 4 6 8 Over-voltage (V) Gain

Gain and Dark count measured on devices from the same wafer

• C. Piemonte: June 13th, 2007, Perugia

28 June 2007

• G. Pauletta: PD07, Kobe, Japan

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Short integration time ⇒ only single/double/….pulses are counted

200 400 600 800 1000 1200 1400

• 8E-10
• 6E-10
• 4E-10
• 2E-10

0E+00 QDC Counts 33.5V 35.5V

double peak

Charge (a.u.)

4 3 2 1

ΔV = 4.5V 1.5V

Number of events with

• ptical cross-talk increases

with voltage Cross-talk below 5% at 4V over-voltage.

Optical cross-talk

• C. Piemonte: June 13th, 2007, Perugia

28 June 2007

• G. Pauletta: PD07, Kobe, Japan

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After-pulsing

• 0.35
• 0.3
• 0.25
• 0.2
• 0.15
• 0.1
• 0.05

0.05

• 1.0E-08

1.0E-08 3.0E-08 5.0E-08 7.0E-08 Time (s) Voltage (V)

y = 0.0067x2 - 0.4218x + 6.639 y = 0.0068x2 - 0.4259x + 6.705 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 31 32 33 34 35 36 Voltage (V) Afterpulse/pulse Tint = 60ns Tint = 100ns

Events with after-pulse measured on a single micropixel.

The amplitude of the after-pulse increases as the cell recovers to its opertional condition

After-pulse probability vs bias It increases following a parabolic law:

01

P P P

c a

⋅ =

linear with Vbias linear with Vbias

• C. Piemonte: June 13th, 2007, Perugia

28 June 2007

• G. Pauletta: PD07, Kobe, Japan

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dark pulses light pulses DC curr with light DC curr. wo light

Photo-detection efficiency

• C. Piemonte: June 13th, 2007, Perugia

28 June 2007

• G. Pauletta: PD07, Kobe, Japan

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Photodetection efficiency

30 40 50 60 70 80 90 100 300 400 500 600 700 800 Wavelength (nm) QE (%) 0V

• 2V

Simul Simul ARC 0.00E+00 2.00E+00 4.00E+00 6.00E+00 8.00E+00 1.00E+01 1.20E+01 1.40E+01 1.60E+01 350 400 450 500 550 600 650 700 750 800 Wavelength (nm) PDE (%) 36V 36.5V 37V 37.5V 38V

ΔV=2V 2.5V 3.5V 3V 4V

QE vs Wavelength

long λ: low PDE because low QE short λ: low PDE because avalanche triggered by holes

Measured on a diode Reduced by small epi thickness Reduced by ARC Area efficiency ~ 20%

PDE=QE*Pt*Ae QE=quantum eff. Pt=avalanche prob. Ae=area eff.

0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02

PDE

350 400 450 500 550 600 650 700 750 800

• C. Piemonte: June 13th, 2007, Perugia

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1x1mm 2x2mm 3x3mm (3600 cells) 4x4mm (6400 cells) Circular (1.2 mm – diameter) increased fill factor: 40x40mm => 44% 50x50mm => 50% 100x100mm => 76%;

last batch

Array

• C. Piemonte: June 13th, 2007, Perugia

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Noise and charge resolution

0.0E+00 5.0E+05 1.0E+06 1.5E+06 2.0E+06 2.5E+06 3.0E+06 3.5E+06 29 30 31 32 33 34 35 5C GAIN 5C Dark Coun

30.5 31 31.5 32 32.5 33

• 1.50E-08
• 1.00E-08
• 5.00E-09

0.00E+00 Pulse Area (Vs)

1x1mm2 SiPM with 40x40μm2 cells

0.0E+00 1.0E+06 2.0E+06 3.0E+06 4.0E+06 5.0E+06 30 31 32 33 34 35 20C GAIN 20C Dark count

T=5C T=20C

resolution limited by electronic noise

Charge spectra at different Voltages with the same light Intensity (pulsed)

3.5p.e. 5p.e. 6.5p.e. 8p.e. 9.5p.e.

First signal and noise characteristics of the last devices

• C. Piemonte: June 13th, 2007, Perugia

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applications

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Characterization of SiPMs (1 mm2from second batch) used for preliminary at Fnal test beam

Visual inspectons (SiDet) and dynamic tests at lab 6 prior to use of SiPMs in Test Beam yielded results compatible with IRST measurements: VB = 34.1 V Gains between ~1 and 2 x 106

dark count vs. bias

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Preliminary study of Scint. Strip viewed by IRST SiPM at the FNAL test beam

Beam (12 GeV protons) Counter readout on both ends by SiPMs T956 neutron counter arrays

Bias = -36V (ΔV=2V)

Data with 120 Gev proton - beam

6 . . . .

10 6 . 1 5 . 1 % 99 . . 5 . 6 × ≈ ≈ = ≈ G MHz N e p N

c d e p

ε

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Future work at fnal

Beam (p,π,e) T956 neutron counter arrays: 64 scint strips each (read out by wls fiber and MAPMTs) Add one plane

• f scint strips read
• ut by Wls fiber and

SiPMs Scintillator strips : 4cm x 1cm x (1 – 2 m), read out by wls fiber. Groove for fiber extruded with scintillator Whole assembly mounted on movable (x,y) support

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