Ion-Channeling in Direct DM Crystalline Detectors
Graciela Gelmini - UCLA
Based on work done with Nassim Bozorgnia and Paolo Gondolo
IDM2010, July 26, 2010
Ion-Channeling in Direct DM Crystalline Detectors Graciela Gelmini - - PowerPoint PPT Presentation
Ion-Channeling in Direct DM Crystalline Detectors Graciela Gelmini - UCLA Based on work done with Nassim Bozorgnia and Paolo Gondolo IDM2010, July 26, 2010 Graciela Gelmini-UCLA Channeling and Blocking Effects in Crystals refer to the
Based on work done with Nassim Bozorgnia and Paolo Gondolo
IDM2010, July 26, 2010
Graciela Gelmini-UCLA
refer to the orientation dependence of ion penetration in crystals.
Channeling:
Ions incident upon a crystal along symmetry axis and planes suffer a series
small-angle scattering that maintain them in the open“channels” and penetrate much further (ions do not get close to lattice sites)
Blocking:
Reduction
the flux
ions
in lattice sites along symmetry axis and planes (“blocking dip”) (From D. Gemmell 1974, Rev. Mod. Phys. 46, 129)
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Graciela Gelmini-UCLA
Arsenic) in Si to make circuits: good data at ∼ 100‘s keV (and analytic models by Gerhard Hobler from Vienna University of Technology, 1995)
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Graciela Gelmini-UCLA
NaI or CsI crystal: “mixed” and “pure” rows and planes Si or Ge crystal .
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Measured the scintillation output of a monochromatic 10 MeV 16O beam through NaI(Tl) scintillator
Channeled ions produce more scintillation light (because they loose most of their energy via electronic stopping rather than nuclear stopping)
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The potential importance of the channeling effect for direct DM detection was first pointed
subsequently for NaI (Tl) by Drobyshevski (2007) and by the DAMA collaboration (2008). When ions recoiling after a collision with a WIMP move along crystal axes and planes, they give their energy to electrons, so Q = 1 instead of QI = 0.09 and QNa = 0.3
ER (keV) fraction
Iodine recoils Sodium recoils
10
10
10
1 10 20 30 40 50 60
(DAMA coll. 2008)
100 101 102 103 108 107 106 105 104 103 102 101 100
MWIMP GeV ΣΧp pb spinindependent
CDMS I Si CDMS II Ge XENON 10 SuperK CoGeNT TEXONO CRESST I DAMA 3Σ90 with channeling DAMA 7Σ5Σ with channeling DAMA 3Σ90 DAMA 7Σ5Σ
(For example: Savage,Gelmini, Gondolo, Freese JCAP 0904:010,2009) IDM2010, July 26, 2010 6
Graciela Gelmini-UCLA
larger
crystal, which produces a daily modulation in the measured recoil energy (equivalent to a modulation of the quenching factor) which depends on the orientation of the crystal
This daily modulation would be a background free DM signature!
Nassim Bosognia, Paolo Gondolo and I set out more than a year ago to do an analytic calculation to understand channeling and blocking for DM detection, and estimate daily modulation amplitudes...
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Graciela Gelmini-UCLA
1965, Morgan & Van Vliet 1971, Dearnaley 1973, Gemmell 1974, Appleton & Foti 1977, Hobler 1995)
screened Thomas-Fermi potential is averaged
0.00 0.05 0.10 0.15 0.20 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Distance nm U keV 100 Channel, Si ions
aSiSi Planar Axial
“transverse energy” is conserved Eperp = Eφ2
i + Ui
vperp = v sin φ ≃ vφ transverse velocity component and Eperp = Mv2
perp/2 IDM2010, July 26, 2010 8
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can be understood as overlap of Coulomb shadow cones, ρmin > ρc and ψ < ψc
(Fig. from Hiroshi Kudo, 2001) IDM2010, July 26, 2010 9
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ρmin: min. distance of approach - ψ: angle far away from row or plane
(Fig. from D. Gemmell 1974, Rev. Mod. Phys. 46, 129)
Eperp = Eφ2
i + Ui
= U(ρmin) = Eψ2 + Umiddle
Umiddle: at middle of channel, far from row/plane, where angle is ψ =
E
Channeling requires ρmin > ρc which amounts to ψ ≤ ψc
All the difficulty of this approach resides in calculating ρc
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ρmin > ρc(E, T) =
c(E) + [c u1(T)]2
ρc(E): for perfect-rigid-lattice decreases with E u1(T ): 1-dim. amplitude of thermal fluctuations . (used Debye model) increases with T, e.g. in Si
200 400 600 800 0.006 0.008 0.010 0.012 0.014 Crystal Temperature K nm
aSiSi u1
c: found through data/simulations, 1 < c < 2 u1(T )
ψ ≤ ψc =
E
If ρc(E, T) ≥ the radius of the channel ρch, ψc = 0: NO CHANNELING POSSIBLE
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Si ion in Si crystal, c = 1 (i.e. rc → u1(T) at high E)
(Bozorgnia, Gelmini, Gondolo 2010)
dach 2 u1 40 mK 293 K 600 °C 900 °C Static lattice
1 10 100 1000 104 0.002 0.005 0.01 0.02 0.05 0.1 0.2 E keV rc nm
100 axial channel, Si ions, c1
Static lattice 900 °C 600 °C 293 K 40 mK
1 10 100 1000 104 1. 5. 2. 3. 1.5 7. E keV Ψc deg
100 axial channel, Si ions, c1
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Si ion in Si crystal, c = 2 (i.e. rc → 2 u1(T) at high E)
(Bozorgnia, Gelmini, Gondolo 2010)
dach 2 2 u1 40 mK 293 K 600 °C 900 °C Static lattice
1 10 100 1000 104 0.002 0.005 0.01 0.02 0.05 0.1 0.2 E keV rc nm
100 axial channel, Si ions, c2
Static lattice 900 °C 600 °C 293 K 40 mK
1 10 100 1000 104 0.5 1. 2. 5. E keV Ψc deg
100 axial channel, Si ions, c2
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Data B and P ion in Si crystal fitted with c = 2 (data from Hobler-1995)
(Bozorgnia, Gelmini, Gondolo 2010)
{110} {100}
100 200 300 400 500 600 0.0 0.5 1.0 1.5 2.0 E keV Ψc deg
B in Si, c1c22
{110} {100}
100 200 300 400 500 600 0.0 0.5 1.0 1.5 2.0 E keV Ψc deg
P in Si, c1c22 IDM2010, July 26, 2010 14
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In NaI, no data or modeling available at low energies
Calculated as if ions start from the middle of the channel. Good for incident ions but not for recoiling ions!
ER (keV) fraction
Iodine recoils Sodium recoils
10
10
10
1 10 20 30 40 50 60
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We used HEALPix (Hierarchical Equal Area iso Latitude Pixelisation) method to compute the integral over all directions. Dechanneling due to Tl doping (only first interaction and no rechanneling)
(Bozorgnia, Gelmini, Gondolo 1006.3110)
10 20 30 40 50 60 0.001 0.005 0.01 0.05 0.1 0.5 1. E keV Fraction Incident ions
NaDAMA IDAMA Na,dech I,dech Na I
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may happen when nucleus is somewhat within the channel, with prob. g(ρ) = ρ
u2
1e(−ρ2/2u2 1) thus PCh =
∞
ρi,min drg(ρ) = e(−ρ2
i,min/2u2 1)
and ρi,min is given by ρc (uncertainty in ρc is exponentiated in PCh)
Two main T effects: amplitude u1(T) increases with T which increases channneling prob.- but ρc also increases with T what decreases the prob.
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Channeling probability of ions ejected from lattice sites: Si
No dechanneling included (Bozorgnia, Gelmini, Gondolo 2010)
900 °C 600 °C 293 K 40 mK
1 10 100 1000 104 0.001 0.01 0.005 0.002 0.003 0.0015 0.015 0.007 E keV Fraction
Si ions, c1c21
900 °C 600 °C 293 K 40 mK
1 10 100 1000 104 0.0001 0.001 0.0005 0.0002 0.002 0.0003 0.003 0.00015 0.0015 0.0007 E keV Fraction
Si ions, c1c22
Upper bound (static lattice, c = 0)
900 °C 600 °C 293 K 40 mK
1 10 100 1000 104 1104 5104 0.001 0.005 0.01 0.05 E keV Fraction
Si ions, Static lattice
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Channeling probability of ions ejected from lattice sites: Ge
No dechanneling included (Bozorgnia, Gelmini, Gondolo 2010)
900 °C 600 °C 293 K 40 mK
1 10 100 1000 104 105 1104 2104 5104 0.001 0.002 0.005 0.01 E keV Fraction
Ge ions, c1c21
900 °C 600 °C 293 K 40 mK
1 10 100 1000 104 105 0.0001 0.001 0.0005 0.0002 0.0003 0.00015 0.0015 0.0007 E keV Fraction
Ge ions, c1c22
Upper bound (static lattice, c = 0)
900 °C 600 °C 293 K 40 mK
1 10 100 1000 104 105 1104 5104 0.001 0.005 0.01 0.05 E keV Fraction
Ge ions, Static lattice
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Channeling probability of ions ejected from lattice sites: NaI and CsI
T-dependent upper bounds with lattice oscillations included (c = 1) (no dechanneling included)
Na, 600 °C I, 600 °C Na, 293 K I, 293 K Na, 77.2 K I, 77.2 K
1 10 100 1000 104 1104 5104 0.001 0.005 0.01 0.05 0.1 E keV Fraction
c1c21
NaI (Bozorgnia, Gelmini, Gondolo 1006.3110)
600 °C 293 K 77.2 K
1 10 100 1000 104 0.001 0.002 0.005 0.01 0.02 0.05 0.1 E keV Fraction
c1c21
CsI (Bozorgnia, Gelmini, Gondolo 2010)
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Channeling probability of ions ejected from lattice sites: NaI and CsI
Upper bounds at room temperature with lattice oscillations included (no dechanneling included)
Na, c = 1 I, c = 1 Na, c = 2 I, c = 2
1 10 100 1000 104 105 104 0.001 0.01 E keV Fraction
T293 K
NaI (Bozorgnia, Gelmini, Gondolo 1006.3110)
c = 1 c = 2
10 100 1000 104 105 104 0.001 0.01 0.05 E keV Fraction
T293 K
CsI (Bozorgnia, Gelmini, Gondolo 2010)
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Then (Savage et al JCAP 0904:010,2009)
100 101 102 103 108 107 106 105 104 103 102 101 100
MWIMP GeV ΣΧp pb spinindependent
CDMS I Si CDMS II Ge XENON 10 SuperK CoGeNT TEXONO CRESST I DAMA 3Σ90 with channeling DAMA 7Σ5Σ with channeling DAMA 3Σ90 DAMA 7Σ5Σ
and now (diff. at 7σ)(Savage et al. 1006.3110)
100 101 102 107 106 105 104 103 102 101 100 101
MWIMP GeV ΣΧp pb spinindependent
total events with channeling total events modulation with channeling modulation 7Σ5Σ3Σ90
DAMA
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If Leff extrapolated as a constant or zero below 4 keVnr (band: shows how the 90%CL bound changes with 1σ change in Leff) (Savage,Gelmini, Gondolo, Freese 1006.0972) (see talk of C. Savage)
1.0 0.5 2.0 5.0 10.0 20.0 50.0 0.00 0.05 0.10 0.15 0.20 0.25
Nuclear recoil energy keVnr eff
Solid curves: fiducial eff models Filled regions: 1Σ uncertainties
100 101 102 108 107 106 105 104 103 102
MWIMP GeV ΣΧp pb spinindependent eff constant below 3.9 keVnr
CDMS CoGeNT 712 GeV XENON100 XENON10 DAMA total events DAMA modulation 5Σ3Σ90 100 101 102 108 107 106 105 104 103 102
MWIMP GeV ΣΧp pb spinindependent eff zero below 3.9 keVnr
CDMS CoGeNT 712 GeV XENON100 XENON10 DAMA total events DAMA modulation 5Σ3Σ90
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recoiling nuclei: the channeled fraction of recoils is smaller and it is strongly temperature dependent. DAMA region is not affected by channeling up to the 5σ level.
a WIMP signal, a DM signature without any background (with small amplitudes- but larger for halo components with small velocity dispersion)
As initially proposed by H. Sekiya et al. (2003); Avignone, Creswick, Nussinov (2008 and 1007.0214)
to get good quantitative results (not available or NaI). Montecarlo simulations may be needed to settle these issues (many are used in other applications of channeling).
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