SLIDE 9 Determination of DL (cont’d) Determination of DL (cont’d) e e
d) e e
d)
2. 2.
From test data: Fault coverage of tests and chip fallout From test data: Fault coverage of tests and chip fallout t l d A difi d i ld d l i fitt d t t l d A difi d i ld d l i fitt d t rate are analyzed. A modified yield model is fitted to rate are analyzed. A modified yield model is fitted to the fallout data to estimate the the fallout data to estimate the DL DL. .
Th (d f l d b f l l i l Th (d f l d b f l l i l
Three parameters: (defect replaced by fault: electrical,
Three parameters: (defect replaced by fault: electrical, Boolean, or functional malfunctions) Boolean, or functional malfunctions)
Fault density
Fault density f f = average number of stuck = average number of stuck at faults per unit chip area at faults per unit chip area
Fault density,
Fault density, f f = average number of stuck = average number of stuck-at faults per unit chip area at faults per unit chip area
Fault clustering parameter,
Fault clustering parameter, β
Stuck
Stuck-
at fault coverage, T g
The modified yield equation:
The modified yield equation:
Assuming that tests with
Assuming that tests with 100 100% fault coverage (T = % fault coverage (T =1 1. .0 0) )
Y (T ) = (1 + TAf /β) - β
g g ( g ( ) remove all faulty chips: remove all faulty chips: Y = Y Y = Y (1 1) = ( ) = (1 1 + + Af Af /β) ) – β
β yield, if T=
yield, if T=1 1 good chips good chips
Sharif University of Technology Page 9 of 16 Testability: Lecture 4