DANAE Direct dArk matter search using DEPFET with repetitive-Non- - - PowerPoint PPT Presentation

▶
danae
SMART_READER_LITE
LIVE PREVIEW

DANAE Direct dArk matter search using DEPFET with repetitive-Non- - - PowerPoint PPT Presentation

Mar 31, 2023 240 likes •416 views

DANAE Direct dArk matter search using DEPFET with repetitive-Non- destructive-readout Application Experiment Alexander Bhr 1 , Holger Kluck 2,3 , Jelena Ninkovic 1 , Jochen Schieck 2,3 , Johannes Treis 1 , Hexi Shi 2 1 Halbleiterlabor der

slide-1
SLIDE 1

1

Alexander Bähr1, Holger Kluck2,3, Jelena Ninkovic1, Jochen Schieck2,3, Johannes Treis1, Hexi Shi2

1Halbleiterlabor der Max-Planck-Gesellschaft, Germany 2 Institut für Hochenergiephysik der Österreichischen Akademie der Wissenschaften, Austria 3 Atominstitut, Technische Universität Wien, Austria

June 2019

  • A. Bähr, MPG Semiconductor Laboratory

DANAE

Direct dArk matter search using DEPFET with repetitive-Non- destructive-readout Application Experiment

slide-2
SLIDE 2

2

DePFET

June 2019

  • A. Bähr, MPG Semiconductor Laboratory

 MOSFET on n-substrate  deep-n implant below gate

 potential minimum for electrons  „internal gate“ (IG)  Conductivity modulated by electrons  Source Follower  Drain Current Readout

 reset via clear and clear gate  good signal to noise  unobstructed backside contact; 100% fill factor  Implementation of additional functionality

  • n pixel level

DePleted p-channel Field Effect Transistor

(Kemmer & Lutz 1987)

slide-3
SLIDE 3

3

DePFET - Matrix

June 2019

  • A. Bähr, MPG Semiconductor Laboratory
  • DePFET as base cell of pixelated sensor

 horizontal row selection  vertical signal columns  1 active row, other pixels integrating  Charge storage and amplified in pixel  Noise 2-4 e- per pixel (@ ~5 µs/row)  Energy resolution @ 5.9 keV FWHM = 130 eV

Prototype 256x256 pixels 75x75 µm² „standard DePFET“

slide-4
SLIDE 4

4

Superpixel with 2 DePFETs Internal gates seperated

DePFET - RNDR

June 2019

  • A. Bähr, MPG Semiconductor Laboratory

Repetitive Non-Destructive Readout

slide-5
SLIDE 5

5

Superpixel with 2 DePFETs Internal gates seperated

DePFET - RNDR

June 2019

  • A. Bähr, MPG Semiconductor Laboratory

Repetitive Non-Destructive Readout

slide-6
SLIDE 6

6

Superpixel with 2 DePFETs Internal gates seperated

DePFET - RNDR

June 2019

  • A. Bähr, MPG Semiconductor Laboratory

Repetitive Non-Destructive Readout

slide-7
SLIDE 7

7

Superpixel with 2 DePFETs Internal gates seperated Charge transfered between IG1 and IG2

DePFET - RNDR

June 2019

  • A. Bähr, MPG Semiconductor Laboratory

Repetitive Non-Destructive Readout

slide-8
SLIDE 8

8

Superpixel with 2 DePFETs Internal gates seperated Charge transfered between IG1 and IG2

DePFET - RNDR

June 2019

  • A. Bähr, MPG Semiconductor Laboratory

Repetitive Non-Destructive Readout

slide-9
SLIDE 9

9

Superpixel with 2 DePFETs Internal gates seperated Charge transfered between IG1 and IG2

DePFET - RNDR

June 2019

  • A. Bähr, MPG Semiconductor Laboratory

Repetitive Non-Destructive Readout

slide-10
SLIDE 10

10

Superpixel with 2 DePFETs Internal gates seperated Charge transfered between IG1 and IG2

DePFET - RNDR

June 2019

  • A. Bähr, MPG Semiconductor Laboratory

Repetitive Non-Destructive Readout

slide-11
SLIDE 11

11

Superpixel with 2 DePFETs Internal gates seperated Charge transfered between IG1 and IG2 Charge read out n times

DePFET - RNDR

June 2019

  • A. Bähr, MPG Semiconductor Laboratory

Repetitive Non-Destructive Readout Offset Laser test signal

slide-12
SLIDE 12

12

DePFET - RNDR

June 2019

  • A. Bähr, MPG Semiconductor Laboratory

 DePFET – RNDR  Demonstrated on single-pixels  ENC ~ 0.2 e- at

 tsingle= 6.5 µs  n= 200

 for 1 to 1000 e-  Only moderate cooling (-60°C)  ENC limited by leakage current

100 200 300 400 500 1 2 3

ENCeff (e

  • )

n

Baer's equation @ 3 e

  • ENC

3.5 fA / pixel @ RT 20.0 °C 2.5 °C

  • 15.0 °C
  • 32.5 °C
  • 50.0 °C

Ideal case

slide-13
SLIDE 13

13

DANAE - Sensitivity

June 2019

  • A. Bähr, MPG Semiconductor Laboratory

Interaction - electron recoil Signal of few e- Limitation: Leakage current

  • 1e- threshold:
  • Optimize manufacturing
  • Cool sensor
  • 2e- threshold:
  • Readout faster

Intrinsic radiation

  • Optimize fabrication

Extrinsic radiation

  • Sensor Shielding
slide-14
SLIDE 14

14

Until End of 2019

June 2019

  • A. Bähr, MPG Semiconductor Laboratory

 Operation of Prototype RNDR DePFET matrix

 64x64 pixel  75x75 µm² pixel size  Temperature down to -150°C

 Demonstration of DePFET-RNDR on matrix level  Leakage current at low temperature  Demonstration of incremental readout

slide-15
SLIDE 15

15

Future Plans

June 2019

  • A. Bähr, MPG Semiconductor Laboratory

 Test of smaller pixel sizes (36x36 µm²)  Improved technology to reduce single read noise  Large area Matrix (1M – 4M Pixels)  Thicker sensor substrate (up to 1 mm)  Test of Radio purity (already in preparation)

slide-16
SLIDE 16

16

DePFET RNDR benefits

June 2019

  • A. Bähr, MPG Semiconductor Laboratory

 Row-Parallel Readout (Framerate ~0.1 Hz - 1 Hz for n=1000)  Low Noise (newest technology ~2 e- for standard DePFET at 2.5 µs/ row)  „Incremental Readout“  Integrate charge over m frames  Clear only all kth frame  Additional data analysis possible

Manufacturing at MPG Semiconductor Lab

 Optimization and customization of technology possible

slide-17
SLIDE 17

17

Thanks for your Attention

June 2019

  • A. Bähr, MPG Semiconductor Laboratory