consolidation of si 3 n 4 cu composite powders
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CONSOLIDATION OF Si 3 N 4 /Cu COMPOSITE POWDERS FABRICATED BY - PDF document

18 TH INTERNATIONAL CONFERENCE ON COMPOSITE MATERIALS CONSOLIDATION OF Si 3 N 4 /Cu COMPOSITE POWDERS FABRICATED BY ELECTROLESS DEPOSITION TECHNIQUE W. Daoush 1 *, W. Bradbury 2 , E. Olevsky 2 , Randall M. German 2 1 Department of Powder Technology


  1. 18 TH INTERNATIONAL CONFERENCE ON COMPOSITE MATERIALS CONSOLIDATION OF Si 3 N 4 /Cu COMPOSITE POWDERS FABRICATED BY ELECTROLESS DEPOSITION TECHNIQUE W. Daoush 1 *, W. Bradbury 2 , E. Olevsky 2 , Randall M. German 2 1 Department of Powder Technology at Central Metallurgical R&D Institute (CMRDI), P. O. Box 87 Helwan, Cairo, Egypt, 2 Department of Mechanical Engineering, College of Engineering, San Diego State University, 5500 Campanile Drive, San Diego, California 92128-1326, USA *Corresponding Author: waleeddaush@cmrdi.sci.eg Keywords : Silicon Nitride/Copper Composites, Electroless Deposition, Compaction, Sintering. Abstract thermal expansion of copper is about four times higher than that of the semiconductor silicon. The Copper/Si 3 N 4 composites have been produced by use of Si 3 N 4 particles as reinforcements in copper powder metallurgy rout. Particle coated with Cu based composites is considered very attractive to metal is an appropriate solution to enhance the meet the increasing demands for high performance interfacial bonding as well as physical and heat sink materials and packages. When the ceramic mechanical properties of the Cu/Si 3 N 4 composites. particles are embedded in a copper matrix, the Electroless Cu coating of Si 3 N 4 particles with interface plays a crucial role in determining the different weight % were achieved. The produced thermal conductivity, the CTE and also the Si 3 N 4 /Cu composite powders underwent cold mechanical properties of the composite. An ideal compaction and sintering at 850 o C. The prepared interface should provide good adhesion and Si 3 N 4 /Cu powders as well as the consolidated minimum thermal boundary resistance. composites were investigated by SEM. It was It is known that the bonding between observed that the Si 3 N 4 particles were encapsulated ceramic particles like SiC, diamond, Si 3 N 4 and Cu is by copper metal and the microstructures of the very weak [5-9]. One of a reasonable solution of this consolidated compacts show homogeneous problem is coating of the reinforcement ceramic distribution of Si 3 N 4 in the copper matrix. The particles with copper. Electroless coating technique density and microhardness of the produced Si 3 N 4 has been widely used to prepare the composite /Cu composites were measured. The relative green coatings. As the advancement of this technique, and the sintered densities were decreased but the electroless nanometer composite coatings, in which hardness was increased by increasing the Si 3 N 4 ultra fine particles are used as reinforcing phase and weight percent. metals were deposited on its surfaces. The purpose of the present work to improve 1. Introduction the homogeneity and the distribution of silicon nitride reinforcement particles in copper matrix by Metal matrix composites offer the using electroless Cu coating process as a kind of possibility to tailor the properties of a metal by nonbonding between Cu and Si 3 N 4 particles . Silicon adding an appropriate reinforcement phase and to nitride/copper composites with different silicon meet the demands in physical and mechanical nitride weight percent were prepared using powder management. Copper base composites can offer coating technique followed by cold compaction and excellent strength properties in several applications sintering. The composite powders as well as the and it currently produced by mixing the constituents, sintered materials were underwent investigations by cold compaction and/or hot pressing at high SEM for metallographic characterizations. The temperature and high pressure during sintering is mechanical properties were evaluated by measuring necessary because the compacts expand during the hardness test. sintering leads to form pores and weakening of the bond between the ceramic powder and the metal 2. Materials matrix [1-4]. Copper is one of the most important materials for thermal and electronic applications. It Silicon nitride powder grade of particle size has higher electrical and thermal conductivities and less than 1 μm were used as reinforcement. Figure 1a a lower CTE than aluminum. Unfortunately, the shows the SEM micrograph for the silicon nitride

  2. raw materials has cubic particle shape. Highly pure Where, W air and W water are the weight of the chemicals of Copper (II) sulphate pentahydrate was specimen in air and water respectively. used as the Cu metal source, potassium-sodium The hardness was measured by applying a tartarate was used as a complexing agent, (38vol.%) 100 gm load using the Microhardness-Vickers tester. formaldehyde solution was used as a reducing agent. The test was repeated five times at different points in each sample, and the values were compiled by 3. Methods calculating the average of the reported values of five sets of indentation tests. Previous published work was occurred for determining the optimum chemical composition and 4 Results and Discussion conditions of electroless metal depositions on different powder reinforcements [10-14]. The silicon 4.1 Powder Coating Process nitride particles were coated with copper by a chemical method. The known weight were dispersed Figure 1b shows SEM image of the prepared nanosized copper powder by electroless deposition in an aqueous solution which consisted of 70 gm technique. It was observed that the prepared copper CuSO 4 .5H 2 O, 170 gm KNaC 4 H 4 O 6 .4H 2 O and 50 gm NaOH dissolved in one liter of distilled water. A powder has 200 nm particle sized with a spherical particle shape. Figure 1c shows SEM image of the suitable amount of 37 wt.% formaldehyde solution coated silicon nitride particles with copper metal. were added. By controlling the concentration, the pH value and the temperature of the solution, the The silicon nitride particles were coated with copper as implanted type and the copper metal covers the coating process started spontaneously and finished surface of the particles by a homogeneous layer. within 30 minutes. The coated powders were washed with distilled water, dried and weight. The above 4.2 Compaction and Sintering Process mentioned chemical bath composition was used for preparing six Si 3 N 4 /Cu composite powders contains 0 (pure copper), 1, 2, 3, 4 and 5 wt.% of Si 3 N 4 . The The produced Si 3 N 4 /Cu composite powders were cold compacted at 600 MPa in a uniaxial die Cu-coating was estimated from the differences in weight of Si 3 N 4 before and after coating. using hydraulic pressing machine. The compacts were sintered at 850 o C. Figure 2 shows the The produced Si 3 N 4 /Cu composite powders dilatometer shrinkage curve of the 5wt.%Si 3 N 4 /Cu underwent cold compaction under pressure of 600 MPa in a uniaxial die of 12 mm diameter. The composites. Our finding indicated that Cu-coated powders sinter like pure copper due to the existence compacted samples were sintered in a closed tube furnace at 850 o C for 90 min. of Cu/Cu contacts. Accordingly, a rapid rate of The sintered samples underwent mounting shrinkage is observed. The sintering mechanism of this system is mainly by grain shape accommodation and grinding using 2000, 4000 grade SiC papers [15]. respectively. The grinding samples were polished down to 3 μm diamond baste of 3 μm particle size. The microstructures of the polished composites were 4.3 Microstructure Investigations and Density investigated by SEM. Extensive metallographic and image analysis investigations were carried out for Measurements the consolidated bulk materials to calculate the Figure 3 shows SEM micrographs of the equivalent reinforcement (Si 3 N 4 ) volume percent for each weight percent. prepared 1wt.% Si 3 N 4 /Cu composite and 5wt.% Si 3 N 4 /Cu composite. It was observed from the The density of the bulk materials was microstructure that, the silicon nitride particles are measured using water as a floating liquid and the sin tered density (ρ) were ca lculated by the homogenously distributed in the copper matrix and a good adhesion between Si 3 N 4 and Cu-matrix is Archimedes method using the following equation; observed. ρ = W air / (W air – W water ) (1)

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