Color imaging sensors with perovskite alloys (Conference - - PDF document

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See discussions, stats, and author profiles for this publication at: https://www.researchgate.net/publication/340908950 Color imaging sensors with perovskite alloys (Conference Presentation) Conference Paper April 2020 DOI: 10.1117/12.2572385


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See discussions, stats, and author profiles for this publication at: https://www.researchgate.net/publication/340908950

Color imaging sensors with perovskite alloys (Conference Presentation)

Conference Paper · April 2020

DOI: 10.1117/12.2572385

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SPIE.

Smart Structure +Nondestructive Evaluation

Color Imaging Sensors with Perovskite Alloys

by

Mohammad Ismail Hossain

  • W. Qarony1, H. A. Khan2, M. Kozawa3, A. Salleo4, J. Y. Hardeberg2,
  • H. Fujiwara2, Y. H. Tsang1, D. Knipp4

1) Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 2) The Norwegian Colour and Visual Computing Laboratory, NTNU-Norwegian University of Science and Technology, Gjøvik, Norway 3) Department

  • f

Electrical, Electronic and Computer Engineering, Gifu University, Gifu, Japan 4) Geballe Laboratory for Advanced Materials, Department of Materials Science and Engineering, Stanford University, Stanford, USA.

27 April – 1 May 2020

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Outline

❑ Motivation ❑ Vertically Stacked vs Conventional Color Sensors ❑ Perovskite Color Sensors ❑ Colorimetric Characterization ❑ Summary

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Security and surveillance Consumer electronics Artificial Intelligence

Source: Google Image

Motivation

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Why Perovskites???

❑ Direct bandgap material ❑ High Absorption Coefficient ❑ Large diffusion length ❑ Tunable bandgap property ❑ Structure: ABX3 ❑ A: organic or/and inorganic cation ❑ B: divalent cation ❑ C: monovalent halide anion

Low Cost Deposition

Advancement in photovoltaic conversion efficiency

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Working Principle

❑ Converts detected light signal to electrical signal. ❑ Under the illumination, a depletion region is created, where a built-in electric field facilitates the segregation

  • f

electrons and holes. ❑ Width of the depletion region is determined by the accumulation

  • f charge carriers.
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Vertically Stacked vs Conventional Color Sensor

Color pixel of conventional color sensor Color pixel of vertically stacked color sensor Disadvantage: Color error caused by Color Moire effect Advantage: Free of color Moire effect

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Investigated Vertically Stacked Sensors

P.M. Hubel et.al., Sensors Camera Syst. Sci. Ind. Digit.

  • Photogr. Appl. V, 2004. doi:10.1117/12.561568.

Commercially available vertically stacked color sensor: Foveon

Sensors are limited by the achieved color error

  • S. Yakunin, Y, NPG Asia Mater. (2017). doi:10.1038/am.2017.163.
  • T. Smith, J. Guild, , Trans. Opt. Soc. (1931). doi:10.1088/1475-4878/33/3/301.

Experimentally realized color sensor with mechanically stacked pure perovskite crystals Colormetrical standard observer

  • r color matching functions

Blue: 450 nm / 500 nm (2.7 eV / 2.5 eV) Green: 550 nm / 600 nm (2.3 eV / 2.1 eV) Red: 650 nm / 700 nm (2.0 eV / 1.8 eV)

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Vertically Stacked Perovskite Color Sensors

❑ Bandgaps

  • f

absorbers must be matched with visible spectrum. ❑ Bandgaps should be adjusted with colors red, green, and blue. ❑ The thicknesses

  • f

absorbers are selected to be larger than penetration depths. Important Points ~

SE()=e××QE()/(h×c) Full Width Half Maxima (FWHM) of 50 nm, 136 nm, and 244 nm Maxima

  • f

the spectral responsivity at 400 nm, 500 nm, and 700 nm

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Vertically Stacked Perovskite Color Sensors

Material selection: perovskite alloys

Optical properties of perovskite alloys using Energy Shifting model

Eg(x) = 2.28 + 0.48x + 0.3x2 eV Eg(x) = 1.61 + 0.34x + 0.33x2 eV

Select Bandgap Determine Composition Calculate Electronic Structure Determine Optical Properties

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Vertically Stacked Perovskite Color Sensors

proposed sensor design with perovskite alloys

❑ UV blocking layer

  • f

MAPbCl3 is placed to suppress unwanted UV radiation and lights shorter than 400 nm. ❑ Spectral responsivities exhibit center wavelengths at 450, 550, and 650 nm, which match very well with color matching functions. ❑ FWHM (87 to 95 nm) also nicely matches with FWHM

  • f

matching functions of 60 to 100 nm.

No optical filters and infrared blocking layers are required, since sensor covers from 400 nm to 700 nm

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Colorimetric Characterization and Color Error

comparison: conventional vs proposed design

Sensor Arrangement

  • f sensor

channels Materials Color error Ref. Sensor with Color Filter Array (CFA) side-by-side crystalline silicon sensor plus polymer filters 4.4 [1] Foveon Sensor (stacked silicon diodes) vertical crystalline silicon 5.0 [2] Stacked silicon thin film diodes vertical silicon alloys 5.0 [3] Stacked Perovskite diodes vertical MAPbCl3 MAPbBr3 MAPbI3 15 [4] Stacked Perovskite diodes vertical MAPbCl3 MAPbBr3 MAPbI3 15 this study Stacked Perovskite diodes vertical MAPbBr1-xClx MAPbI1-xBrx 3.7 this study

1. A.E. and H.E. Gamal, Digit. Still Cameras. 21 (2017) 143–178. 2.

  • A. J.Y. Wang et al., Appl. Phys. Lett. (2009).

3. P.G. Herzog et al., Color Imaging Device-Independent Color. Color Hardcopy, Graph. Arts IV, 2003. 4.

  • S. Yakunin et al., NPG Asia Mater. (2017).

❑ Colorimetric characterization is performed by a linear transformation matrix method. ❑ The method transforms color space

  • f

color sensor to color space

  • f

human standard observer. ❑ Finally, color error is calculated according to a procedure

  • utlined by CIE.
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Summary

❑ Color sensors based on vertically stacked perovskite diodes have been proposed, designed, and colorimetrically characterized. ❑ Multi-bandgap perovskite alloys with suitable bandgaps were utilized. ❑ The electronic structure and optical properties of the perovskite alloys were determined by the energy shifting model. ❑ Sensing of colors without using color filters and demosaicking algorithm. ❑ Very high quantum efficiency of over 80%, while the conventional sensor with CFA exhibits max of 33%. ❑ Up to our knowledge for the first time, it could be shown that a vertically stacked three color sensor exhibits a color error equal to, or smaller than errors of conventional sensors using optical filters.

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References

1. P.M. Hubel et al., Spatial frequency response of color image sensors: Bayer color filters and Foveon X3, in: Sensors Camera

  • Syst. Sci. Ind. Digit. Photogr. Appl. V, 2004.

2. A.E. and H.E. Gamal, CMOS image sensors, Image Sensors Signal Process. Digit. Still Cameras. 21 (2017) 143–178. 3.

  • W. Qarony, M.I. Hossain, V. Jovanov, A. Salleo, D. Knipp, Y.H. Tsang, Influence of Perovskite Interface Morphology on the

Photon Management in Perovskite/Silicon Tandem Solar Cells, ACS Appl. Mater. Interfaces. 12 (2020) 15080-15086. https://doi.org/10.1021/acsami.9b21985. 4. M.I. Hossain, N. Yumnam, W. Qarony, A. Salleo, V. Wagner, D. Knipp, Y.H. Tsang, Non-resonant metal-oxide metasurfaces for efficient perovskite solar cells, Sol. Energy. 198 (2020) 570–577. https://doi.org/10.1016/j.solener.2020.01.082. 5. M.I. Hossain, A. Hongsingthong, W. Qarony, P. Sichanugrist, M. Konagai, A. Salleo, D. Knipp, Y.H. Tsang, Optics of Perovskite Solar Cell Front Contacts, ACS Appl. Mater. Interfaces. 11 (2019) 14693–14701. doi:10.1021/acsami.8b16586. 6. M.I. Hossain, W. Qarony, S. Ma, L. Zeng, D. Knipp, Y.H. Tsang, Perovskite/Silicon Tandem Solar Cells: From Detailed Balance Limit Calculations to Photon Management, Nano-Micro Lett. 11 (2019) 58. https://doi.org/ 10.1007/s40820-019-0287-8. 7.

  • W. Qarony, M.I. Hossain, A. Salleo, M.I. Hossain, D. Knipp, Y.H. Tsang, Rough versus planar interfaces: How to maximize the

short circuit current of perovskite single and tandem solar cells, Mat. Today Energy 11 (2019) 3106-113. https://doi.org/10.1016/j.mtener.2018.10.001. 8. M.I. Hossain, W. Qarony, V. Jovanov, Y.H. Tsang, D. Knipp, Nanophotonic design of perovskite/silicon tandem solar cells, J.

  • Mater. Chem. A. 6 (2018) 3625–3633. https://doi.org/ 10.1039/C8TA00628H.

9.

  • W. Qarony, M.I. Hossain, R. Dewan, S. Fischer, V.B. Meyer-Rochow, A. Salleo, D. Knipp, Y.H. Tsang, Approaching Perfect

Light Incoupling in Perovskite and Silicon Thin Film Solar Cells by Moth Eye Surface Textures, Adv. Theory Simulations. 1 (2018) 1800030. https://doi.org/10.1002/adts.201800030.

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Supporting Information

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16

  • A. El Gamal and H. Eltoukhy, CMOS image sensors, IEEE Circuits and

Devices Magazine 21(3), 6-20 (2005).

Background of digital camera and image sensor

Imaging System Pipeline

Focusing scene

a.) Image sensor converts incident light to electrical signal b.) CFA produces only one

  • f the 3 colors of RGB at a

time

ADC converts electrical signal to digital Demosaicking algorithm creates full color image

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