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Coherence and Correlations in Transport through Quantum Dots Rolf - - PowerPoint PPT Presentation
Coherence and Correlations in Transport through Quantum Dots Rolf J. Haug Abteilung Nanostrukturen Institut fr Festkrperphysik and Laboratory for Nano and Quantum Engineering Gottfried Wilhelm Leibniz Universitt Hannover Germany
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lattice mismatch between InAs and AlAs (GaAs): 7% Stranski-Krastanov growth
IOX
1 µm
5 nm GaAs 5 nm AlGaAs 15 nm AlGaAs:Si 15 nm AlGaAs GaAs
AFM-Tip
Oxide 2DEG
Depletion
AFM-Tip Heterostructure
Oxide
Water
+ _
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500 nm
0.0 0.1 0.2 0.3 0.4 0.5 0.6 1 2
C/r0 (nJ/K) Te (K) 2 4 6 8 10 12 20 40 60 80 100 20 40 60 Rxy (kΩ) B (T)
ν = 1 ν = 1/2 Rxx (kΩ) ν = 1/3 ν = 2/5 ν = 2/3
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B
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⊥
//
disc-like quantum dot
Bychkov-Rashba (structure, 0,054meV) dominates over Dresselhaus (bulk, 0.012meV) for dots in 10nm quantum well
GaAs quantum dots extreme anisotropy: holes in SiGe/Ge structure
g=6.2 0
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interaction of charge on dot with states in the emitter
InAs dots between AlAs barriers
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Keller, PRB 64 (2001) Stopa PRL 88. 256804 (2003)
single-electron tunneling conductance within Coulomb blockade vanishes for large T
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spins in leads
energy involving spin flips
valley
Kondo, Prog. Theor. Phys. 32, 37 (1964) Glazman and Raikh, JETP Lett. 47, 452 (1988) Ng and Lee, Phys. Rev. Lett. 61, 1768 (1988) Goldhaber-Gordon et al., Nature 391, 156 (1998) Cronenwett et al., Science 281, 540 (1998) Schmid et al., Physica B 256, 182 (1998)
0.000 0.025 0.050
G (e²/h) VB (mV)
Kondo
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dot: 2 Landau levels edge/core leads: spin polarized edge channels spin down: strong amplitude spin up: weak amplitude
Ciorga et al. Phys. Rev. B 61, R16315 (2000)
New J. Phys. 8, 298 (2006)
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Kondo spin blockade
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B (T) 1.7 1.9 2.1 2.3 2.5
V (mV)
G
Source Drain
VG
1 µm
x20 x1
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Ugo Fano
Annalen der Physik, 57, 541 (1918)
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spectrum ( PRB 66, 161303R (2002) )
Coulomb blockade
measurement resolution: ΔS ~10-30 A2/Hz 1 kΩ resistor @ 300 K: S = 1.6 ·10-23 A2/Hz
x x
E E
Θ = 1 τ
C C
Θ = 1 τ
T = 1.5 K
2
2 1
C E C E
Θ + Θ Θ Θ − = α
2 4 6 8 10 20 40 60 20 40 60 80 100 120 50 100 150 200
Vsd = 131 mV 120 mV
S ( 10
2/Hz)
f (kHz)
100 mV
I (pA) VSD (mV)
ED
S=2eI
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2 2 2 C E C E
Θ + Θ Θ + Θ = α
236 238 240 242 0.6 0.7 0.8 0.9 1.0 0.0 0.2 0.4 0.6 Fano factor α
VSD (mV)
I (nA)
B = 15 T T = 0.4 K
strong additional noise suppression due to Fermi edge singularity
γ −
− ∝ Θ
th E
V V
PRB 62, 12621 (2000); PRB, 74, 035329 (2006)
γ −
− ∝ Θ
D F E
E E
ED
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stacks of InAs dots
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Fano factor
0.6 0.8 1.0 1.2 1.4 V (mV) Fano Factor α
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e.g. Phys. Rev. B 69, 113316 (2004); Gustavsson et al, Phys. Rev. B 74, 195305 (2006); Zachrin et al, Phys. Rev. Lett. 98, 066801 (2007) I t
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EL < ER
here: two molecular states for coherently coupled dots – energies aligned: symmetric system and equal rates ⇒ α < 1 – energies detuned: asymmetric distribution and tunnelling rates ⇒ bunching EL = ER
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and emission
temperature dependence ε (mV)
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– by driven electron pump – electrons at well defined times → no noise expected
5 10 50 100 150 200
S(f) (fA
2/Hz)
f (kHz)
S = α·S0
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400 nm FFT
~
U1 U2
I/V
E
(Blumenthal et al, Nat. Phys. 2007, Kaestner et al, arXiv:0707.0993)
– n electrons per cycle; repetition frequency f
10 20 10 20 2 4 6 8 10 12 14 10 20 I = 1.0 ef I = 1.6 ef I = 2.0 ef S (fA
2 / Hz)
f (kHz)
1 2 3
10 I / ef U1 (mV) S (fA
2/ Hz)
f = 400 MHz
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ε (mV) ε (mV) 0.0
2.7 K 1.4 K
I (nA)
0.5 1.0 1.5 V
SD (mV)1.4 K 2.7 K
Fano Factor α
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