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Bandstructure and Spectral Function of Single and Bilayer Graphene Measured by ARPES Eli Rotenberg Dr. Aaron Bostwick, Dr. Taisuke Ohta http://people.tribe.net/star-simone/photos/6989200b-410f-4587-a72e-9b6e73acd1aa Advanced Light Source


  1. Bandstructure and Spectral Function of Single and Bilayer Graphene Measured by ARPES Eli Rotenberg Dr. Aaron Bostwick, Dr. Taisuke Ohta http://people.tribe.net/star-simone/photos/6989200b-410f-4587-a72e-9b6e73acd1aa Advanced Light Source Lawrence Berkeley National Laboratory USA Prof. Th. Seyller - Erlangen Prof. K. Horn - FHI Berlin Funding Max Planck Society European Science Foundation under the EUROCORES SONS program U.S. Department of Energy, Office of Basic Sciences

  2. Outline  Experimental technique Angle-Resolved Photoemission Spectroscopy (ARPES)  Sample Preparation   Bandstructure Determination of Graphene from 1 to 2 layers 1 layer: Bostwick et al cond-mat/0609660. new!  bilayer: Ohta et al Science   Spectral Function of 1-layer graphene The lifetime of holes in n -doped graphene is determined by  • electron-phonon coupling • electron-electron coupling – e-h pair generation – e-plasmon coupling  Future Work towards ARPES at 50 nm spatial resolution 

  3. Experimental  Substrate n -type (N) 6H-SiC(0001)  N=1.5±0.5 x 10 18 cm -3   Preclean anneal in hydrogen plasma   Graphetization anneal in ultra-high vacuum 1150C: longer = thicker [1,2]  P<1x10 -10 T   Doping n -doping up to 6x10 13 cm -2 by K deposition up to 0.04 ML   Measure P~2x10 -11 T  T~20K  [1] Forbeaux, I., J.M. Themlin, and J.M. Debever . Phys. Rev. B, 1998. 58 (24): p. 16396-406 [2] Berger, C., et al., Science, 2006. 312: p. 1191-6.

  4. ESF - the Electronic Structure Factory sample prep analysis An international user facility at the Advanced Light Source photons in Lawrence Berkeley Natl. Laboratory

  5. Measurement of Electronic Band Structure Using ARPES hv e E F h Angle → k || 2 m k sin E = � || kin 2 h Energy 2-dimension 1-dimension  Photon source: Beamline 7.01, ALS h ν =95eV, Energy resolution 25-30meV   Electron analyzer: Scienta R4000 Angular resolution 0.1° (0.01Å -1 ) 

  6. Formation of first graphene layer K.V. Emtsev, Th. Seyller, F. Speck, L. Ley, P. Stojanov, J.D. Riley, R.G.C. Leckey, cond-mat 0609383 graphene Si √ 3x √ 3 C 6 √ 3x6 √ 3 C 6 √ 3x6 √ 3 SiC(0001) SiC(0001) SiC(0001) sp 2 -bonded sp 2 -bonded p z hybr. with SiC p z derived band Van Der Waals Bonding

  7. graphene bandstructure tight-binding model expt 2 0 Binding Energy Binding Energy rel. to E D rel. to E D -1 0 -2 -3 -2 -4 -4 -6 -8 R. Saito, G. Dresselhaus, M. S. Dresselhaus Physical properties of carbon nanotubes, Imperial College Press, 1998 t = 2.82 eV E F = E D +0.435 eV submitted, in review

  8. Graphene: TB vs Expt. Data 2 -4.5 -2 -4 -3.5 -3 -0.5 -0.5 -6.5 -5.5 -4.5 -3.5 -2.5 -1.5 -1.5 -2.5 -3.5 -4.5 -5.5 -6.5 -3 -1 -1 -3 -2 1 -5 -6 -7 t = 2.82 eV -8 -1.5 -1 -0.5 -3.5 ky 0 -1.5 -2.5 -4 -3 -2 -0.5 Momentum resolution -1 -8.5 -2 -2.5 -7.5 0.012Å -1 = 0.7% of Γ K -6.5 -5.5 -1 -4.5 -1 -1 -6.5 -5.5 -4.5 -3.5 -2.5 -1.5 -1.5 -2.5 -3.5 -4.5 -5.5 -6.5 -0.5 -3 -0.5 -3 -3 -3.5 -2 -4 -2 -4.5 -2 -2 -1 0 1 2 kx - expt. bands generally more anisotropic than model - spectral peak widths are limited by sample lifetime submitted, in review

  9. Spectral Function of Graphene As grown Increased doping by K deposition 130 meV submitted, in review

  10. Many body effects and photoemission “Kinkology” mass renormalization BSCCO Superconductor Results [1] 0.0 E → h Binding Energy, eV -0.1 quasiparticle decay 0 E k ω 1 , k 1 ω 1 - Δω , k 1 + q k → -0.2 0.0 0.04 0.08 Δω , q Momentum, Å -1 what we measure 6 7 8 = 1 Im � ( k , E ) A ( k , E ) superconductivity 2 + Im � ( k , E ) 0 � Re � ( k , E ) 2 � [ ] [ ] E � E k e � ( k , E ) = Re � ( k , E ) 4 + i Im � ( k , E ) e 1 2 4 3 1 2 4 4 3 energy lifetime shift [1] Koralek et al, Phys. Rev. Lett. 96, 017005 (2006)

  11. Is the Quasiparticle picture valid for graphene? n =5.6x10 13 Calculated A(k,E) what we Using only Im Σ (expt) measure and Re Σ (calc) 6 7 8 = 1 Im � ( k , E ) A ( k , E ) Kinks are due to many-body 2 + Im � ( k , E ) 0 � Re � ( k , E ) 2 � [ ] interactions, not details of the [ ] E � E k single-particle bandstructure (i.e. not a consequence of � ( k , E ) = Re � ( k , E ) 4 + i Im � ( k , E ) strain, coupling to substrate, 1 2 4 3 1 2 4 4 3 etc) energy lifetime shift submitted, in review

  12. Electron Phonon Coupling 30 Binding Energy rel to E F 0 -3 -1 x10 25 Momentum width, Å -0.5 20 data 15 -1.0 10 5 -1.5 0 -0.6 -0.4 -0.2 0.0 Binding Energy α 2 F ( ω ) = graphite phonon DOS [1] Im Σ (k, ω ) calculated with standard model [2,3] el-el interaction λ =0.3 [1] Vitali, L., et al., Phonon and plasmon excitation in inelastic electron tunneling spectroscopy of graphite. Phys. Rev. B, 2004. 69(12): p. 121414. [2] Grimvall, G., The Electron-Phonon Interaction in Metals. 1981, Amsterdam: North Holland Publishing Company. submitted, in review [3] Also seen for graphite, Zhou et al.Annals of Physics 2006

  13. Electron-Electron Coupling Fermi-liquid-like decay by electron-hole pair formation calc. Im � ( � ) , arb Ε D ∼ω 1.5 -2.0 -1.5 -1.0 -0.5 0.0 Near E F Below E D Below ~2E D Energy � , eV Departure from the usual monotonic Fermi liquid behavior (~ ω 2 ) submitted, in review

  14. Im Σ due to e-h pair generation 80 e-h pairs 13 cm -2 -3 expt, n=5.6x10 Binding Energy rel to E F 70 0 -1 x10 model, e-h pair generation 60 Momentum Width, Å -0.5 50 ?? 40 -1.0 phonons 30 20 -1.5 10 -2.0 -1.5 -1.0 -0.5 0.0 Energy � , eV 2 ω D 2 ω D ω D 2 ω D ω D Im Σ Im Σ model expt submitted, in review

  15. Plasmon model we need to couple to a mode with large ω and small q --> plasmons submitted, in review

  16. A little bit more about the plasmon spectrum Ordinary 2-dimensional dispersion function 4 � ne 2 q m c (1 + � ) � pl ( q ) = Carrier mass ~0.1 m e extrapolated from Screening the transport msmts. constant. We of Novoselov et al E F - E D use from 3-10 We expect a peak in Im Σ which scales in width and size with ( E F - E D ) Novoselov, K. S. et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature 438, 192-200 (2005). submitted, in review

  17. Quantitative Comparison to Data n =5.6x10 13 only 4 free parameters used: - λ [ ph] -scale factors for e-h & e-pl coupling - screening const. ε expt inputs: × 10 13 cm -2 shape of bands eff. mass vs n [1] [1] Novoselov, K. S. et al. Two-dimensional gas of massless Dirac submitted, in review fermions in graphene. Nature 438, 192-200 (2005).

  18. Summary: QP lifetime in graphene Near E F Near E F Near E D Below E D Near E D submitted, in review

  19. Determining the number of layers We count the number of π states Ohta, T., Bostwick, B., Seyller, T., Horn, K. & Rotenberg, E. Controlling the Electronic Structure of Bilayer Graphene. Science 313, 951-954 (2006).

  20.  Controlling gap between π and π * bands in bilayer graphene [1] Evolution of the Bandstructure [2] Single layer Bilayer [1] Ohta, T., Bostwick, B., Seyller, T., Horn, K. & Rotenberg, E. Controlling the Electronic Structure of Bilayer Graphene. Science 313, 951-954 (2006). [2] McCann, E. and V.I. Fal'ko, Landau-level Degeneracy and Quantum Hall Effect in a Graphite Bilayer. Phys. Rev. Lett., 2006. 96 : p. 086805.

  21. Evolution of π bands on surface doping 0.008 e - 0.010 e - 0.012 e - 0.017 e - 0.022 e - 0.027 e - 0.032 e - 0.005 e - /unit cell  Deposition of potassium  Shift of π band due to increased total carrier density  Continuous closing/reopening of the gap Ohta, T., Bostwick, B., Seyller, T., Horn, K. & Rotenberg, E. Controlling the Electronic Structure of Bilayer Graphene. Science 313, 951-954 (2006).

  22. Closing and re-opending of the gap between π and π * band K graphene SiC SiC SiC adsorption bilayer CB E F potential VB Non-equal charge distribution due to short interlayer screening length Ohta, T., Bostwick, B., Seyller, T., Horn, K. & Rotenberg, E. Controlling the Electronic Structure of Bilayer Graphene. Science 313, 951-954 (2006).

  23. Evolution of π and π * bandgap and tight binding parameters γ 1 γ 1 Tight binding e - per unit cell e - per unit cell U: on-site Coulomb energy π orbital overlap between adjacent layers γ 1: NN interlayer hopping integral  → γ 1 increases at higher electron density smaller interlayer distance caused by a shorter screening  length TB: McCann and Fal’ko Ohta, T., Bostwick, B., Seyller, T., Horn, K. & Rotenberg, E. Phys. Rev. Lett. 96, 086805 (2006). Controlling the Electronic Structure of Bilayer Graphene. Science 313, 951-954 (2006).

  24. The future: towards 50nm spatial resolution We succeeded to measure ARPES of graphite using 300 nm probe size We are heading towards 50 nm spot size to measure bandstructure of - graphene and multilayers under bias conditions - individual CNTs? - etc

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