Status of SiC high voltage device technology Mikael stling, KTH - - PowerPoint PPT Presentation

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Status of SiC high voltage device technology Mikael stling, KTH - - PowerPoint PPT Presentation

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Status of SiC high voltage device technology Mikael stling, KTH Royal Institute of Technology, Sweden Outline 1. Introduction 2. Device Review (JFET, MOSFET, BJT) 3. 6 kV-Class BJTs 4. 15 kV-Class BJTs 5. HT & harsh environments 6.

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Status of SiC high voltage device technology

Mikael Östling, KTH Royal Institute of Technology, Sweden

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NEREID WORKSHOP BERTINORO OCT 2016

Outline

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  • 1. Introduction
  • 2. Device Review (JFET, MOSFET, BJT)
  • 3. 6 kV-Class BJTs
  • 6. Summary
  • 4. 15 kV-Class BJTs
  • 5. HT & harsh environments
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NEREID WORKSHOP BERTINORO OCT 2016

Outline

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  • 1. Introduction
  • 2. Device Review (JFET, MOSFET, BJT)
  • 3. 6 kV-Class BJTs
  • 6. Summary
  • 4. 15 kV-Class BJTs
  • 5. HT & harsh environments
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NEREID WORKSHOP BERTINORO OCT 2016

At least 50 % of the electricity used in the world is controlled by Power Devices.

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Global Warming Energy Conservation Improving the Efficiency Renewable Energy Power Devices Electrical Conversion

B.J. Baliga, Advanced High Voltage Power Device Concepts, Springer

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Application for Power Devices

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101 102 103 104 10-2 10-1 100 101 102 103 104

TELECOM. DISPLAY DRIVES

Voltage rating (V)

Current rating (A)

LAMP BALLAST ROBOTICS MOTOR DRIVES ELECTRIC TRAINS HVDC TRANSMISSION POWER SUPLIES AUTOMOTIVE ELECTRONICS

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SiC Device Roadmap

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Source: Dr. Muhammad Nawaz, ABB, ESCDERC 2016 but modified

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Price Scenario SiC

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Source: Dr Anant Agarwal, US Department of Energy, ESCDERC 2016

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Price Scenario SiC

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The price for a 1.2 kV, is significantly below the PowerAmerica’s target of 10 cents/A. If the industry can approach these numbers in 3-5 years then the device demand will grow exponentially across multiple applications. 200mm SiC substrates, expected by 2020, will further reduce the cost of SiC MOSFETs. 4.6 cents/A 6.1 cents/A

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NEREID WORKSHOP BERTINORO OCT 2016

Outline

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  • 1. Introduction
  • 2. Device Review (JFET, MOSFET, BJT)
  • 3. 6 kV-Class BJTs
  • 6. Summary
  • 4. 15 kV-Class BJTs
  • 5. HT & harsh environments
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NEREID WORKSHOP BERTINORO OCT 2016

MOSFETs

Application: Solar inverters, switch mode power supplies, high voltage DC/DC converters, battery chargers, motor drive, pulsed power applications, renewable energy, lighting, telecom power supplies, induction heating, auxiliary power supplies, HVAC, LED lighting power supplies

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NEREID WORKSHOP BERTINORO OCT 2016

1700 MOSFETs

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JFETs

Applications: Solar inverters, high voltage DC/DC or AC/DC conversion, bidirectional inverter.

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NEREID WORKSHOP BERTINORO OCT 2016

CoolSiC™ 1700 V JFETs

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Recently, Infineon presented their 1200V CoolSiC™ with record low Ron of 45 mΩ·cm2

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NEREID WORKSHOP BERTINORO OCT 2016

BJTs

Application: Down hole oil drilling, geothermal instrumentation, hybrid electric vehicles (HEV), solar inverters, switched, mode power supply (SMPS), power factor correction (PFC), induction heating, uninterruptible power supply (UPS), motor drives.

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NEREID WORKSHOP BERTINORO OCT 2016

SiC power bipolar junction transistors by TranSiC

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  • Vertical epitaxial NPN structure
  • Dry etching to form base-emitter and base-collector junctions
  • Al implantation for low-resistive base contact and junction termination (JTE)
  • Surface passivation by SiO2, reduced surface recombination
  • Large area BJT has many narrow emitter fingers
  • Deposited isolation oxide, via holes and Al metal pads
  • Active areas between 4.3mm2 and 15 mm2

Base Emitter

ND+ Emitter contact N+ substrate Collector contact P Base implant Base contact SiO2 surface passivation JTE implant N

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Recent Performance of SiC BJTs

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  • Current gain at T=25 C : hFE=117 at IC=22 A
  • VCESAT=0.95 V at IC=15 A (JC=350 A/cm2), ρON=2.7 mΩcm2
  • Low leakage current at VCEO=1200 V, Open-base breakdown ~ 1800 V

5 10 15 20 25 30 35 40 1 2 3 4 5

Collector current (A) Collector emitter voltage VCE (v)

IB=100 mA

T=25 C

IB=200 mA IB=300 mA IB=400 mA hFE=117

4.3 mm2 BJT

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NEREID WORKSHOP BERTINORO OCT 2016

1200 V 4H-SiC Unipolar and Bipolar Devices

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1700 V 4H-SiC Unipolar and Bipolar Devices

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Ultra High Voltage Devices

The on-resistance for a 4H-SiC unipolar device above 15 kV, increases to the point where it is impractical from a yield standpoint and cost. Bipolar devices are likely to be the first choice.

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Source: Dr. John W. Palmour, CREE, IEDM 2014

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21 kV BJT (T. Kimoto Kyoto University)

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MIYAKE et al. IEEE ELECTRON DEVICE LETTERS, VOL. 33, NO. 11, NOVEMBER, 2012, p.1598

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Active area small – 0.0035 mm2

MIYAKE et al. IEEE ELECTRON DEVICE LETTERS, VOL. 33, NO. 11, NOVEMBER, 2012, p.1598

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Outline

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  • 1. Introduction
  • 2. Device Review (JFET, MOSFET, BJT)
  • 3. 6 kV-Class BJTs
  • 6. Summary
  • 4. 15 kV-Class BJTs
  • 5. HT & harsh environments
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6 kV-Class 4H-SiC BJTs

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in Proc. 27th ISPSD, May 2015, pp. 249-252

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Trench JTE Design

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IEEE ELECTRON DEVICE LETTERS, VOL. 36, NO. 2, Feb. 2015

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I-V Characteristics

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Termination efficiency 92 % Termination efficiency 93 %

IEEE ELECTRON DEVICE LETTERS, VOL. 36, NO. 2, Feb. 2015 in Proc. 27th ISPSD, May 2015, pp. 249-252

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NEREID WORKSHOP BERTINORO OCT 2016

Outline

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  • 1. Introduction
  • 2. Device Review (JFET, MOSFET, BJT)
  • 3. 6 kV-Class BJTs
  • 6. Summary
  • 4. 15 kV-Class BJTs
  • 5. HT & harsh environments
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15 kV-Class BJTs and PiN Diodes

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15 kV-class PiN diodes will be presenteded in Tu1.04

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I-V Characteristics of the BJTs

A current gain record of 139 for 15 kV-class BJTs

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Current Gain Wafer map

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β ≥ 100 (91 % of the dies)

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Outline

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  • 1. Introduction
  • 2. Device Review (JFET, MOSFET, BJT)
  • 3. 6 kV-Class BJTs
  • 6. Summary
  • 4. 15 kV-Class BJTs
  • 5. HT & harsh environments
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Applications for HT & harsh environments

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Application Type Temperature Radiation Oil and gas drilling P, S 600 °C No Industrial motor drives P 300 °C No Automotive P, S 300-600 °C No Aviation P, S 300-600 °C (Yes) Space exploration S 600 °C Yes Nuclear energy (P) S 300-600 °C Yes

P = Power switching applications S = Sensor signal processing

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A new high temperature SiC electronics project

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WOV – Working on Venus

$ 3,3M Project funding 2014 – 2018

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Radiation stability of SiC BJT vs. MOSFET

Commercially available 24 A (CMF10120D) SiC power MOSFETs fabricated by CREE, shows a large negative threshold voltage shift and becomes inoperative after a dose of only 300

  • krad. A. Akturk, et.al, IEEE Trans. Nucl. Sci., 59 (2012).

Forward current gain degradation up to 38 Mrad was found negligible, but for the dose of 332 Mrad, a degradation of 52% is seen.

To be published in IEEE TED

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Comparison of various bipolar technology

  • 4H-SiC technology show more tolerance to gamma radiation in comparison to other

technologies.

  • 4H-SiC devices irradiated with 3 MeV protons show about one order of magnitude

higher tolerance in comparison to the Si technology Gamma irradiation Protons irradiation 4H-SiC

KTH-Low Power BJT[7] Si- BJT[8]

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NEREID WORKSHOP BERTINORO OCT 2016

Outline

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  • 1. Introduction
  • 2. Device Review (JFET, MOSFET, BJT)
  • 3. 6 kV-Class BJTs
  • 6. Summary
  • 4. 15 kV-Class BJTs
  • 5. HT & harsh environments
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NEREID WORKSHOP BERTINORO OCT 2016

Summary

  • Replacing Si with SiC switch devices gives great savings with

respect to energy density, efficiency, and physical systems volume

  • At 1200-1700V SiC MOSFETs, JFETs and BJT performs about

equally good

  • In a few years the cost issues with SiC looks very competitive

< 5 cents/Amp

  • Above 15 kV, BJTs/IGBTs are likely to be the first choice
  • For high temperature and radhard environments BJTs have a clear

advantage

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NEREID WORKSHOP BERTINORO OCT 2016

Acknowledgments

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The KTH research team The Swedish Energy Agency The Swedish Research Council VINNOVA – research and innovation for sustainable growth Swedish Foundation for Strategic Research KAW Foundation STandUP for Energy

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Commercial SiC-MOSFET (Si-IGBT) Power Module

10/21/16 39

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Emitter Size Effect

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Base Size Effect

10/21/16 MIKAEL ÖSTLING 41

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Current Gain vs Geometry

10/21/16 MIKAEL ÖSTLING 42

WE = 40 µm WB = 30 µm

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Compactness: Si Vs SiC

10/21/16 MIKAEL ÖSTLING 43

Source: Dr. Muhammad Nawaz, ABB

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Current Gain vs Applied Voltage

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Decreasing effective base Base width modulation (Early effect)

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Current gain improvement

10/21/16 MIKAEL ÖSTLING 45

To be published in IEEE TED

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On-resistance and current density improvement

10/21/16 MIKAEL ÖSTLING 46

To be published in IEEE TED

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1) A. Akturk, et.al, IEEE Trans. Nucl. Sci., 59 (2012) 3258-3264. 2) S S. Suvanam, et al., submitted to IEEE Trans. Nucl. Sci., (2016) 3) M. Nawaz, et al., 2009 Device Research Conference, University Park, PA, (2009) 279-280. 4) L. Ratti et al., IEEE Trans. Nucl. Sci., 52 (2005) 1040-1047. 5) J. Metcalfe et al., Nucl. Instr. Meth. Phys. Res. A, 579 (2007) 833–838. 6) S. L. Kosier et al., IEEE Trans. Nucl. Sci., 40 (1993) 1276- 1285. 7) S. S. Suvanam, et al., IEEE Trans. Nucl. Sci., 61 (2014)1772-1776. 8) X. J. Li et al., Chin. Phys. B, 19 (2010) 066103.

10/21/16 MIKAEL ÖSTLING 47

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Switching waveforms at 150 C

10/21/16 MIKAEL ÖSTLING 48

  • Turn-on to IC=6 A (140 A/cm2), VCE fall-time of 15 ns
  • Turn-off to 800 V with VCE rise-time of 12 ns, and negligible tail current
  • Fast switching using 22 nF external base cap for dynamically increased IB
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10/21/16 MIKAEL ÖSTLING 49

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Darlington pairs with square-cell intertwined layout design

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To be published in IEEE TED

E

2

B1 E1 , B2 700 µm

Driver Output

Collector Emitter Base C2 E2 B2 E1 C1 B1

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I-V Characteristics

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To be published in IEEE TED

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Intertwined Design

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The oxide openings (black) and top metal contacts (magenta). The hexagon and square emitter contacts (orange) and base contacts (blue) which are inverted in the center of BJTs to form the intertwined design.

To be published in IEEE TED

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300 µm 300 µm 20 µm

To be published in IEEE TED

About 15% higher current density and lower On-resistance

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Emitter Cell Geometry

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At the first time, new cell geometries (square and hexagon) were investigated for BJTs, which opens a new design space for improved performance.

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Optimal Emitter Cell Geometry 42 % higher JC and 21% lower RON for the new cell geometries due to a better utilization of the base area.

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IEEE ELECTRON DEVICE LETTERS, VOL. 36, NO. 10, Oct. 2015

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High Switching Speeds Enable Greater Power Density

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Comparisons 80kHz 200kHz Delta PCB Area 23.9 in2 154.1 cm2 14.8 in2 95.5 cm2

  • 38%

Volume 47.8 in3 782.8 cm3 29.6 in3 485.1 cm3

  • 38%

Weight 18.4 oz. 521.6 gm 10.4 oz 294.8 gm

  • 44%

Density 10.5 W/ in3 0.64 W/ cm3 16.9 W/ in3 1.03 W/cm3 +61%

Low Frequency Silicon vs. High Frequency Silicon Carbide