CBM2002@GSI 1
Resistive Plate Chambers for Time-of-Flight
- P. Fonte
LIP/ISEC Coimbra, Portugal.
Resistive Plate Chambers for Time-of-Flight P. Fonte LIP/ISEC - - PowerPoint PPT Presentation
Resistive Plate Chambers for Time-of-Flight P. Fonte LIP/ISEC Coimbra, Portugal. Compressed Baryonic Matter May 13 16, 2002 GSI Darmstadt/Germany CBM2002@GSI 1 Plan of the Presentation Main physical mechanisms Description of
CBM2002@GSI 1
LIP/ISEC Coimbra, Portugal.
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Time-charge correlation 1-2 ns ∼100 ps
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cathode anode
i i
N
−
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cathode
i i
anode
= ( ) p t N e ( ) − − e ( ) −τ τ ( ) BesselI , 1 2 e ( ) −τ N ( ) − eN 1 e ( ) −τ N
= τ α v t
[Mangiarotti and Gobbi, 2001]
= ( ) p i0 e v N e ( ) −i0 ( ) BesselI , 1 2 i0 N d ( ) − eN 1 i0 N
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[Mangiarotti and Gobbi, 2001]
0.2 0.4 0.6 0.8 1 1.2 1.4 2 4 6 8 10 12
Average number of primary clusters (N) K(N) (time jitter in units of α v)
Standard deviation Sigma (gaussian fit)
1 gap 4 gaps
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y = 0.1967x - 9.6104 5 6 7 8 9 10 70 80 90 100
Applied field (kV/cm)
α v (GHz)
Th1 Th2
TDC
t1 t2
y = 20.69e8.7043x
10 100
0.1 0.2 Time difference (ns)
Threshold 1 (mV)
1 2 1 2
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d
cathode anode
i i d*
Inefficient region (too small avalanches) Efficient region
Gmin~106
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.1 0.2 0.3 0.4
Gas gap (mm) Efficiency/gap
Isobutane (IB) C2H2F4 (TFE) TFE+IB+SF6 Methane
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F.Sauli CERN 77-09
C4H10 C2F4H2
50 60 70 80
CH4
[Fisher, NIMA238]
L(cm-1)
[Finck, RPC2001]
[Riegler, RPC2001]
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*
1 1-d /d min
d
cathode anode
i i d*
Gmin~106 G0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.1 0.2 0.3 0.4
Isobutane (IB): L=9.5/mm C2H2F4 (TFE): L=9/mm TFE+IB+SF6: L=9/mm Methane: L=3/mm
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3σ
2 2
t
[ Fonte 2000]
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[ Spegel et al, 2000 ]
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INA-51063 chip (HP/Agilent)
10 20 30 40 50 60 70 10 100 1000
Signal fast charge per channel (fC) Time resolution per channel (σ/√2) (ps)
RPC at Threshold=12.5 fC RPC at threshold=25 fC RPC at threshold=50 fC Pulser at threshold=25 fC
[ Blanco 2000]
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[Finck, Gobbi et al, RPC2001]
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4 timing channels
Ordinary 3 mm “window glass” Copper strips
HV
[Blanco 2001]
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2 4 6 100 200 300
2 4 6 8 10 10
1
10
2
10
3
Fast charge (pC) Events / 20 fC 0.5 pC
300 500 1000 10 10
1
10
2
10
3
Time difference (ps) Events/20 ps
“300 ps tails” ±1.5 σ fit
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40 50 60 70 80 90 100
10 20 30 40 50 60 70 80
Time resolution (ps σ)
Center of the trigger region along the strips (cm)
93% 94% 95% 96% 97% 98% 99% 100%
10 20 30 40 50 60 70 80
Time efficiency Strip A Strip B Strips A+B
Center of the trigger region along the strips (cm)
[Blanco 2001]
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[Blanco 2001]
2 4 6 8
10 20 30 40 50 60 70 80
∆ t/2 (ns) Strip A Strip B
y=0.0709 x + 0.0001 ⇔ v=14 .1 cm/ns
0.1 0.2 0.3
10 20 30 40 50 60 70 80
Center of the trigger region along the strips (cm) Fit residuals (ns)
50 100 150 200 250 300 350 400
TDC bins Events/bin
50 100 150 200 250 300 350 400
TDC bins Events/bin
50 100 150 200 250 300 350 400
TDC bins Events/bin
5.0 cm
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X left X right Time signal HV XY readout plane Y-strips (on PCB)
RC passive network RC passive network
X-strips (deposited on glass)
10 strips for each coordinate at 4 mm pitch 4 cm 2 mm thick black glass lapped to ~1µm flatness Well carved into the glass (avoid dark currents from the spacer) 300 µm thick high ρ glass disk (corners) metal box (no crosstalk)
[Blanco 2002]
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300 500 1000 10 10
1
10
2
10
3
Time difference (ps) Events/10ps σ = 66.6 ps (54 ps) 3σ Tails=1.9 % 300ps Tails=0.36 %
Events=26186
3σ
±1.5 σ fit
200 400 600 800 1000 500 1000 1500 2000 2500 3000
Fast charge (a.u.) Events/bin
500 1000 10 0 10 2 10 4
2 - 2 = 54 ps
2 - 2 = 54 ps
2 - 2 = 54 ps
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40 50 60 70 80 90 100 2.4 2.6 2.8 3 3.2 3.4
Applied Voltage (kV) Time resolution (ps σ)
55 60 65 70 75 80 85
Efficiency (%) #2 (time only) #3 (time + XY) Efficiency Resolution
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Events/mm2 Y(mm) X (mm)
5 10 15 20 25 500 1000 1500
Position along X (mm) Events/0.5mm
5 10 15 20 25 500 1000 1500
Position along Y (mm) Events/0.5mm
4 mm strip pitch Trigger edge (3 mm) Chamber edge
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Events/mm2 Y (mm) X (mm)
500 1000 10 10
1
10
2
Time difference (ps) Events/4ps
Sigma=74.0 ps (62 ps) 3-Sigma Tails=3.0 % 300ps Tails=1.5 %
Sigma=76.9 ps (66 ps) 3-Sigma Tails=2.9 % 300ps Tails=1.8 %
500 1000 10 10
1
10
2
Time difference (ps) Events/4ps
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σ = 50 ps @ ε = 99 % 3 σ Tails=1.5 % 300ps Tails=0.20%
Layer ε = 75 %, σ = 60 ps +
3 σ Tails=1.4 % 300ps Tails=0.0%
500 1000 10 10
1
10
2
10
3
Time difference (ps) Events/10ps
300 500 1000 10 10
1
10
2
10
3
10
Time difference (ps) Events/10ps
Events=51215
4
σ = 32 ps ε = 94.9 %
300 500 50 100
Time difference (ps) Events/10ps
300 500 20 40
Events/10ps Time difference (ps)
tail-dominated M.C. Experimental
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Channel “A” Neighbouring channel “B”
1 1.2 1.4 1.6 1.8 2
2 4 6 8 10
Threshold
Few 100 ps jitter Realistic (measured) current shape
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[Kubo et al, RPC2001]
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300 500 50 100
Time difference (ps) Events/10ps
300 500 20 40
Events/10ps Time difference (ps)
tail-dominated
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Typically max. rate corresponds to an efficiency drop of a few percent
500 1000 1500 2000 2500 3000 3500 1.0E+09 1.0E+10 1.0E+11 1.0E+12 1.0E+13
LHCb CERN+Bologna Warsaw CERN+Rio ATLAS CMS-forward CMS-barrel ALICE-TOF Beijing ALICE-muon
"Multigap" RPC Streamer mode
(survey of recently published results)
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Drift gap Amplification gap Resistive anode on a metal base
ρ=107 Ω cm
Wire meshes (50 µm wires at 0.5 mm pitch)
15 mm 3.5 mm
[Fonte 1997] [Carlson et al, NSS2001]
1.0E+04 1.0E+05 1.0E+06 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05 1.0E+06
Counting rate (Hz/mm2) Effective gain
N0 = 200 e-
=
Metallic (PPC) limit
Si plate ρ=104 Ω cm-HV
0.1-0.5 mm
microRPC PPAC
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