PXD6 matrix pretests Jelena Ninkovic for the HLL team PXD6 - - PowerPoint PPT Presentation

pxd6 matrix pretests
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PXD6 matrix pretests Jelena Ninkovic for the HLL team PXD6 - - PowerPoint PPT Presentation

PXD6 matrix pretests Jelena Ninkovic for the HLL team PXD6 Production Status Production was split before the 1 st metal layer - reduces risk - accelerates finalization Status of the first batch (4 wafers: 3 SOI+1ref): metal_2 Processing


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SLIDE 1

PXD6 matrix pretests

Jelena Ninkovic for the HLL team

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SLIDE 2

PXD6 Production Status

Production was split before the 1st metal layer

  • reduces risk
  • accelerates finalization

Status of the first batch (4 wafers: 3 SOI+1ref):

  • Processing finished
  • Yield measured on the wafer level
  • 3 wafers (2SOI+1ref) cut
  • One wafer repaired

Status of the second batch (4 wafers: 3 SOI+1ref):

  • Processing finished
  • Yield measured on the wafer level
  • 2 wafers repaired- matrix pretests ongoing

Status of the third batch (2 SOI wafers with DHP footprint):

  • Processing done till Cu (last layer BCB)
  • Yield measured on the wafer level
  • Matrix pretests ongoing

metal_2

  • xide

metal_1 polySi_1 polySi_2 n bulk deep p deep n p+ n+ 2 EVO meeting 14.12.2011 Jelena Ninkovic

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SLIDE 3

Automated pretesting of matrices

16 3

  • Keep all transistors ON and measure I on each readout pad
  • Numbers in the table show number of transistors are

connected (max number 16)

  • Automatic measurement procedure was developed to measure

yield of matrices before bonding

Jelena Ninkovic 3 EVO meeting 14.12.2011

4 rows of readout pads For small matrices each pad has 16 transistors connected (128drains x 16gates)

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SLIDE 4

Results of the pretests on Batch 1 before repair

Jelena Ninkovic EVO meeting 14.12.2011 4

0 transistors connected 16 transistors connected

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SLIDE 5

Cause of a problem

Jelena Ninkovic EVO meeting 14.12.2011 5

Effect present only on wafers that have seen back side processing Analysis of process steps on the back side Photolithography on the backside: Front sides of the wafers were never protected during the photolithography steps on the back side During this process step wafer goes into developer For reference wafers this step takes ~30s whereas for etched SOI wafers the thickness of photoresists requires much longer times (~15min)  Developer was slowly etching Aluminum on the non protected side …

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SLIDE 6

Can we repair it somehow ??

Jelena Ninkovic EVO meeting 14.12.2011 6 metal_2

  • xide

metal_1 polySi_1 polySi_2 n bulk deep p deep n p+ n+

Deposit 3rd Al layer and structure it on top

  • f an already existing extreme topology

Metal 3

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SLIDE 7

Problems during the repair

Jelena Ninkovic EVO meeting 14.12.2011 7

Poly Si Poly Si Al 1 Al 1 Al 2 Al2

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SLIDE 8

Matrix pretests Batch 1 after repair

Jelena Ninkovic 8

0 transistors connected 16 transistors connected 32 transistors connected

EVO meeting 14.12.2011

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SLIDE 9

Matrix pretests Batch 2 after repair

Jelena Ninkovic 9

0 transistors connected 16 transistors connected 32 transistors connected

EVO meeting 14.12.2011

Finished yesterday Yield of the measured matrices >99%

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SLIDE 10

Matrix pretests Batch 3

Jelena Ninkovic 10

0 transistors connected 16 transistors connected

EVO meeting 14.12.2011

Yield of all up to now measured matrices >98%

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SLIDE 11

Thank you for your attention!

11 EVO meeting 14.12.2011 Jelena Ninkovic