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Precision GEM Production in Korea Chonbuk National Univ. Hyunsoo - PowerPoint PPT Presentation

Precision GEM Production in Korea Chonbuk National Univ. Hyunsoo Kim, Min Sang Ryu University of Seoul Minkyoo Choi, Younggun Jeng, Inkyu Park Work presented here has been done before the signing of technology transfer agreement with CERN


  1. Precision GEM Production in Korea Chonbuk National Univ. Hyunsoo Kim, Min Sang Ryu University of Seoul Minkyoo Choi, Younggun Jeng, Inkyu Park

  2. Work presented here has been done before the signing of technology transfer agreement with CERN on GEM production. 2013.07.05-06 Hyunsoo Kim/MPGD2013-RD51 Session 2

  3. GEM Detector for CMS Upgrade Full size GEM foil Location of GE1/1 • Triple GEM foil detectors for CMS detector upgrade in LS2 • for GE1/1 project, we need total 250~290 m 2 of GEM foils. 2013.07.05-06 Hyunsoo Kim/MPGD2013-RD51 Session 3

  4. GEM Fabrication FCCL 5 m m 50 m m thick PI (kapton) thick Cu ~70 m m Cu hole etching Double mask Photolithography Chemical etching PI etching ~25 m m Chemical etching 2013.07.05-06 Hyunsoo Kim/MPGD2013-RD51 Session 4

  5. Players • Academic Institutions – Univ. of Seoul and Chonbuk National Univ. • 3~4 more Universities to join. – R&D on PI (kapton) etching with Mecharonics. • Saehan Micro Tech Co., Ltd. – Copper hole etching • Mecharonics – PI hole etching • And … CERN – provided GEM patterns – technical assistance (in the future) 2013.07.05-06 Hyunsoo Kim/MPGD2013-RD51 Session 5

  6. Mecharonics (www.mecharonics.com) Semiconductor parts manufacturer in Korea. Products: Heater block, Chemical Precursor, etc.  Head Quarter & Production Facility  Clean room : 1000 m 2  R&D and Production Facility  Clean room : 1300 m 2  R&D for GEM foil fabrication done here 2013.07.05-06 Hyunsoo Kim/MPGD2013-RD51 Session 6

  7. Copper Etching • Saehan Micro Tech Co., Ltd. is solely responsible for copper hole etching – Outsourcing is cheaper in the R&D phase – Mecharonics will take over in the full scale GEM foil production • Double Masking • Full sized holes (ø~70 m m) are etched • Hole size can be controlled at ~2 m m level 2013.07.05-06 Hyunsoo Kim/MPGD2013-RD51 Session 7

  8. What We Have Done for PI Etching • Tried a couple of home brew etchant admixtures. • Varied etchant temperature, etching time, and tried nitrogen bubbling to study for various effects. • Mainly worked on 10 x 10 cm 2 GEM foils cut from a 3M produced FCCL roll. – We are trying other brand FCCLs. 2013.07.05-06 Hyunsoo Kim/MPGD2013-RD51 Session 8

  9. 10 x 10 cm 2 GEM Foils Produced six 10 x 10 cm 2 foils from a “cheap” 3M FCCL sample. 2013.07.05-06 Hyunsoo Kim/MPGD2013-RD51 Session 9

  10. Top View (SEM Images) 2013.07.05-06 Hyunsoo Kim/MPGD2013-RD51 Session 10

  11. Cross Section View Cu layer What we can do now PI layer What we had earlier this year with a different etchant 2013.07.05-06 Hyunsoo Kim/MPGD2013-RD51 Session 11

  12. PI Hole Size Control Size of PI hole depends on the etching time. 2 min 10 min 20 min We do not have enough data yet to get the size of the hole as a function of etching time. 2013.07.05-06 Hyunsoo Kim/MPGD2013-RD51 Session 12

  13. Hole Sizes Preliminary hole size measurements: using an optical microscope (eyeballing). 2013.07.05-06 Hyunsoo Kim/MPGD2013-RD51 Session 13

  14. Hole Size Measurement sample 1 PI hole ø=73.9 m m ø=28.9 m m Six 10x10 cm 2 Cu hole Δ ø= 2.3 m m Δ ø= 1.5 m m samples prepared sample 2 under the same ø=28.7 m m ø=73.1 m m condition. Δ ø= 1.8 m m Δ ø= 1.7 m m sample 3 Random sampling ø=27.0 m m ø=73.2 m m of 100~150 points Δ ø= 1.9 m m Δ ø= 1.0 m m in each sample. sample 4 ø=27.6 m m ø=72.0 m m Δ ø= 1.2 m m This includes Δ ø= 1.4 m m systematic sample 5 variance by ø=25.9 m m ø=72.0 m m Δ ø= 1.4 m m Δ ø= 1.3 m m eyeballing… sample 6 ø=27.8 m m ø=72.3 m m We are looking for Δ ø= 1.4 m m Δ ø= 1.5 m m better ways to do this. 10 20 30 50 60 70 80 0 40 Diameter ( m m) 2013.07.05-06 Hyunsoo Kim/MPGD2013-RD51 Session 14

  15. Defects Observed Samples from a “cheap” 3M FCCL roll showed spots missing kapton layer between Cu layers. Identified as a white spot under a back light by naked eyes. back lighting front+back lighting Thought to be due to pre-existing defects in FCCL. We need to use better quality FCCLs. 2013.07.05-06 Hyunsoo Kim/MPGD2013-RD51 Session 15

  16. Post-PI Etching Cleaning • We observed a film like residue after PI etching (Ni-Cr seed layer) • We have tried ultra-sonic cleaning in Deionized Water. – De-lamination of copper layers occurred. Cu layer PI layer • Chemical cleaning as per CERN will used in the future, instead. – Chromic acid treatment 2013.07.05-06 Hyunsoo Kim/MPGD2013-RD51 Session 16

  17. History double mask Mecharonics Tech transfer from CERN single mask New Flex single mask CERN 2013.07.05-06 Hyunsoo Kim/MPGD2013-RD51 Session 17

  18. Numbers I do not have yet • Production Capacity – how much do we invest in the production facility? • Production costs – size of orders. – yields – quality of FCCL required. 2013.07.05-06 Hyunsoo Kim/MPGD2013-RD51 Session 18

  19. Plans action items signed current test/ optical inspection 2013.07.05-06 Hyunsoo Kim/MPGD2013-RD51 Session 19

  20. Summary • We are in R&D stage – tweaking PI etching conditions and cleaning options. – searching for optimal FCCL • We have produced 10x10 cm 2 GEM foils with well defined shaped holes without technology transfer from CERN • With the tech transfer, we expect improvements in GEM foil qualities and manufacturing procedures. 2013.07.05-06 Hyunsoo Kim/MPGD2013-RD51 Session 20

  21. Backup Slides 2013.07.05-06 Hyunsoo Kim/MPGD2013-RD51 Session 21

  22. Cross Section View (3M FCCL) 2013.07.05-06 Hyunsoo Kim/MPGD2013-RD51 Session 22

  23. Hole sizes Sample PI Hole Cu Hole Diameter ( m m) Width ( m m) Diameter ( m m) Width ( m m) 1 28.9 1.5 73.9 2.3 2 28.7 1.8 73.1 1.7 3 27.0 1.9 73.2 1.0 4 27.6 1.2 72.0 1.4 5 25.9 1.4 72.0 1.3 6 27.8 1.4 72.3 1.5 all 27.5 1.8 72.6 1.5 2013.07.05-06 Hyunsoo Kim/MPGD2013-RD51 Session 23

  24. Failure in Etching Observed failure in etching on FCCL produced by GP Tech (PI by Ube) Copper Etching PI Etching We are investigating the possible causes. 2013.07.05-06 Hyunsoo Kim/MPGD2013-RD51 Session 24

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