Shraddha Shekar1, Ali Abdali2, Mustapha Fikri2,3, Christof Schulz2,3 and Markus Kraft1 July, 2011
1 University of Cambridge, UK 2 IVG, University of Duisburg-Essen, Germany 3 CeNIDE, Center for Nanointegration Duisburg-Essen
Modelling the aerosol synthesis of silica nanoparticles from TEOS. - - PowerPoint PPT Presentation
Modelling the aerosol synthesis of silica nanoparticles from TEOS. Shraddha Shekar 1 , Ali Abdali 2 , Mustapha Fikri 2,3 , Christof Schulz 2,3 and Markus Kraft 1 July, 2011 1 University of Cambridge, UK 2 IVG, University of Duisburg-Essen, Germany
Shraddha Shekar1, Ali Abdali2, Mustapha Fikri2,3, Christof Schulz2,3 and Markus Kraft1 July, 2011
1 University of Cambridge, UK 2 IVG, University of Duisburg-Essen, Germany 3 CeNIDE, Center for Nanointegration Duisburg-Essen
branches
molecule
breaking, many possible reactions
relatively inexpensive and halide- free.
Precursor(TEOS) Aerosol reactor P ≥ 1 atm T ≈ 1200 - 2000 K Silica nanoparticles
Industrial Scale Molecular Scale
Quantum Chemistry calculations Statistical Mechanics
H(T) S(T) Cp(T)
Thermochemistry calculation Chemical Kinetics Equilibrium calculation Overall Model Species generation Population Balance Model
Ref: W. Phadungsukanan, S. Shekar, R. Shirley, M. Sander, R. H. West, and M. Kraft. First-principles thermochemistry for silicon species in the decomposition of tetraethoxysilane. J. Phys. Chem. A, 113, 9041–9049, 2009
– Hints towards the existence of stable intermediates & products. – Intermediates Si(OH)x(OCH3)4-x Si(OH)y(OC2H5)4-y – Main Product Si(OH)4
– Reaction set generated to include all intermediates and products from equilbrium. – Reactions obey Arrhenius rate law k = ATβe-Ea/RT – Rate parameters (A, β, Ea) fitted to experimental vaues (a)
(a) J. Herzler, J. A. Manion, and W. Tsang. Single-Pulse Shock Tube Study of the decomposition of tetraethoxysilane and Related
C8H20O4SI = C6H16O4SI + C2H4 C6H16O4SI = C4H12O4SI + C2H4 C4H12O4SI = C2H8O4SI + C2H4 C2H8O4SI = H4O4SI + C2H4 C8H20O4SI = C7H17O4SI + CH3 C7H17O4SI = C2H4 + C5H13O4SI C5H13O4SI = C2H4 + C3H9O4SI C3H9O4SI = C2H4 + CH5O4SI CH5O4SI = H4O4SI + CH C7H17O4SI = C7H16O4SI + H C7H16O4SI = C6H13O4SI + CH3 C6H13O4SI = C6H12O4SI + H C6H12O4SI = C4H10O4SI + C2H2 C4H10O4SI = C2H8O4SI + C2H2 C8H20O4SI = C2H4 + C6H16O4SI2 C6H16O4SI2 = C2H4 + C4H12O4SI2 C4H12O4SI2 = C2H4 + C2H8O4SI2 C2H8O4SI2 = C2H4 + H4O4SI C8H20O4SI = C2H5 + C6H15O4SI2 C6H15O4SI2 + H = C6H16O4SI2 C6H16O4SI2 = C2H5 + C4H11O4SI2 C4H11O4SI2 + H = C4H12O4SI2 C4H12O4SI2 = C2H5 + C2H7O4SI2 C2H7O4SI2 + H = C2H8O4SI2 C2H7O4SI2 = H3O4SI + C2H4 H3O4SI = H2O3SI + OH H2O3SI = SIO2 + H2O C6H15O4SI2 = C2H3 + C4H12O4SI2 C4H11O4SI2 = C2H3 + C2H8O4SI2 C2H8O4SI2 = H3O4SI + C2H3
Main Reaction Pathway
Reaction number
The rate parameters have been fitted to shock-tube experimental data provided by Herzler et al(a)
(a) J. Herzler, J. A. Manion, and W. Tsang. Single-Pulse Shock Tube Study of the decomposition of tetraethoxysilane and Related
Step 2: Sensitivity Analysis To identify the 4 most sensitive parameters Step 1: Low discrepancy series To perform a pre-scan of parameters for 18 Si reactions. Step 3: Response Surface Methodology To estimate model uncertainties
Uncertainties in model parameters for reactions R1 and R15
x B A x + = η
For a simple linear model, K=1
ξ ξ η c x B A c x + + = , ,
x B A c x E x + = = ξ η µ , ,
2 2
c B c x c = = ξ η σ , , Var
exp exp exp
K
1
with uncertainty factor c and standard normally distributed ξ
(a) J. Herzler, J. A. Manion, and W. Tsang. Single-Pulse Shock Tube Study of the decomposition of tetraethoxysilane and Related
Conclusion from kinetic model: Si(OH)4 is the predominant gas-phase precursor
Particles Particle processes
Move in type spce
( )
Parameter estimation method: Sobol sequences followed by simultaneous perturbation stochastic approximation
Unknown parameters
Parameter space: Objective function:
Ref (a): T. Seto, A. Hirota, T. Fujimoto, M. Shimada, and K.
Agglomerates, Aerosol Sci. Tech., 27, 422-438, 1997
Ref (a): T. Seto, A. Hirota, T. Fujimoto, M. Shimada, and K.
Agglomerates, Aerosol Sci. Tech., 27, 422-438, 1997
T = 900 oC T = 1750 oC T = 1500 oC
Precursor + Fuel +Air
Isothermal Batch Reactor (T = 1500 K, P = 1 atm)
TEOS decomposition Formation of Si(OH)4 Particle formation
Sensitive applications of SiNP require highly specific properties
T = 1500 K