metrology Tom Thieme Director Marketing & Sales / LayTec Dr. - - PowerPoint PPT Presentation

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metrology Tom Thieme Director Marketing & Sales / LayTec Dr. - - PowerPoint PPT Presentation

Mar 20, 2024 43 likes •123 views

ICP Etching Process Improvement by in-situ metrology Tom Thieme Director Marketing & Sales / LayTec Dr. Andreas Thies Manager BEOL Technologies / FBH Berlin | 2 ICP Etching Process Improvement by in-situ metrology Issue of cracking

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SLIDE 1

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ICP Etching Process Improvement by in-situ metrology

Tom Thieme Director Marketing & Sales / LayTec

  • Dr. Andreas Thies

Manager BEOL Technologies / FBH Berlin

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SLIDE 2

| October 30th, 2014 ICP Etching Process Improvement by in-situ metrology 2

Issue of cracking wafers (3” and 4”):

ICP Etching Process Improvement by in-situ metrology

Non optimized ICP process results in SiC/GaN wafer cracking due to vertical strain in the carrier/bonding-layer/SiC/GaN structure crack

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SLIDE 3

| October 30th, 2014 ICP Etching Process Improvement by in-situ metrology 3

Equipment configuration

  • Sentech ICP etching system
  • etch bias strongly depends on carrier
  • etch rate strongly depends on carrier
  • Platen temperature 100... 150 °C

backside cooling, p = 1000 Pa

ICP Etching Process Improvement by in-situ metrology

Sentech web side: ICP-RIE plasma etcher SI 500

LayTec EpiCurve system attached to the view-port:

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SLIDE 4

| October 30th, 2014 ICP Etching Process Improvement by in-situ metrology 4

Stress evolution during constant etching conditions

ICP Etching Process Improvement by in-situ metrology

During constant etching conditions stress is incorporated due to temperature gradient of wafer

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SLIDE 5

| October 30th, 2014 ICP Etching Process Improvement by in-situ metrology 5

Stress evolution during various etching conditions

ICP Etching Process Improvement by in-situ metrology

During constant temperature stress is incorporated due to varying etching conditions

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SLIDE 6

| October 30th, 2014 ICP Etching Process Improvement by in-situ metrology 6

Optimized etching process using in-situ products

ICP Etching Process Improvement by in-situ metrology

Using curvature measurement, etching process could be optimized No wafer damage anymore = safe time and cost!

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SLIDE 7

| October 30th, 2014 ICP Etching Process Improvement by in-situ metrology 7

ICP Etching Process Improvement by in-situ metrology

Optimized etching process using in-situ products

Backside Frontside (black marks are artefacts due to photography and depend on angle of the shot

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SLIDE 8

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Knowledge is key

www.laytec.de