ISOLDE Emily Ghosh ISOLDE I sotope mass S eparator O n- L ine DE - - PowerPoint PPT Presentation

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ISOLDE Emily Ghosh ISOLDE I sotope mass S eparator O n- L ine DE - - PowerPoint PPT Presentation

ISOLDE Emily Ghosh ISOLDE I sotope mass S eparator O n- L ine DE tector Located at Proton Synchrotron Booster (PSB) at CERN Use of radioactive nuclei beams for experiments in Nuclear and Atomic Physics Solid State Material Science


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SLIDE 1

ISOLDE

Emily Ghosh

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SLIDE 2

ISOLDE

Isotope mass Separator On-Line DEtector Located at Proton Synchrotron Booster (PSB) at CERN Use of radioactive nuclei beams for experiments in

  • Nuclear and Atomic Physics
  • Solid State
  • Material Science
  • Life Science

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SLIDE 3

The ISOLDE facility

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IDS NICOLE MINIBALL TAS VITO ISOLTRAP Travelling setups COLLAPS CRIS WITCH collections HRS GPS ISCOOL

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SLIDE 4

The ISOLDE facility

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SLIDE 5

Emission Mössbauer spectroscopy

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Implanted propes:

57Mn (1.5 min.) → 57MFe (100 ns) → 57Fe 119In (2.4 min.) → 119MSn (23 ns) → 119Sn

Sample

b b g g

Major benefits: DE (g) ~ neV → Hyperfine interactions Measure dilute (~10-4 at.%) Chemistry of Mn/In Recoil ER ~ 40 eV (57Mn → 57MFe) ER ~ 8 eV (119In → 119MSn) → Interstitial defects

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SLIDE 6

Emission Mössbauer spectroscopy

Implanting isotopes to see effects on surrounding material

  • Gamma radiation to sample
  • Emission from the sample is probed using sample as

reference

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SLIDE 7

Quenching experiments

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1. Implant (and measure) at elevated temperatures (RT-1000 K) 2. Remove the sample from vacuum, quench in liquid nitrogren, measure off-line

Implantation chamber On-line measurement Off-line measurement in LN bath Samples

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SLIDE 8

Quenching experiments

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1. Implant (and measure) at elevated temperatures (RT-1000 K) 2. Remove the sample from vacuum, quench in liquid nitrogren, measure off-line

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SLIDE 9

Quenching experiments

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1. Implant (and measure) at elevated temperatures (RT-1000 K) 2. Remove the sample from vacuum, quench in liquid nitrogren, measure off-line

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SLIDE 10

Quenching experiments

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1. Implant (and measure) at elevated temperatures (RT-1000 K) 2. Remove the sample from vacuum, quench in liquid nitrogen, measure off-line

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SLIDE 11

Quenching experiments

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1. Implant (and measure) at elevated temperatures (RT-1000 K) 2. Remove the sample from vacuum, quench in liquid nitrogren, measure off-line

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SLIDE 12

Quenching experiments

Implanting 57Mn and 119In into silicon nitrides

  • Damage or magnetic properties?

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SLIDE 13

Quenching experiments

Implanting 57Mn and 119In into silicon nitrides

  • Damage or magnetic properties?

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307K 434K 535K 645K 768K 807K Hot Temperatures : Ni50Mn34In16