ISOLDE Emily Ghosh ISOLDE I sotope mass S eparator O n- L ine DE - - PowerPoint PPT Presentation
ISOLDE Emily Ghosh ISOLDE I sotope mass S eparator O n- L ine DE - - PowerPoint PPT Presentation
ISOLDE Emily Ghosh ISOLDE I sotope mass S eparator O n- L ine DE tector Located at Proton Synchrotron Booster (PSB) at CERN Use of radioactive nuclei beams for experiments in Nuclear and Atomic Physics Solid State Material Science
ISOLDE
Isotope mass Separator On-Line DEtector Located at Proton Synchrotron Booster (PSB) at CERN Use of radioactive nuclei beams for experiments in
- Nuclear and Atomic Physics
- Solid State
- Material Science
- Life Science
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The ISOLDE facility
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IDS NICOLE MINIBALL TAS VITO ISOLTRAP Travelling setups COLLAPS CRIS WITCH collections HRS GPS ISCOOL
The ISOLDE facility
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Emission Mössbauer spectroscopy
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Implanted propes:
57Mn (1.5 min.) → 57MFe (100 ns) → 57Fe 119In (2.4 min.) → 119MSn (23 ns) → 119Sn
Sample
b b g g
Major benefits: DE (g) ~ neV → Hyperfine interactions Measure dilute (~10-4 at.%) Chemistry of Mn/In Recoil ER ~ 40 eV (57Mn → 57MFe) ER ~ 8 eV (119In → 119MSn) → Interstitial defects
Emission Mössbauer spectroscopy
Implanting isotopes to see effects on surrounding material
- Gamma radiation to sample
- Emission from the sample is probed using sample as
reference
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Quenching experiments
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1. Implant (and measure) at elevated temperatures (RT-1000 K) 2. Remove the sample from vacuum, quench in liquid nitrogren, measure off-line
Implantation chamber On-line measurement Off-line measurement in LN bath Samples
Quenching experiments
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1. Implant (and measure) at elevated temperatures (RT-1000 K) 2. Remove the sample from vacuum, quench in liquid nitrogren, measure off-line
Quenching experiments
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1. Implant (and measure) at elevated temperatures (RT-1000 K) 2. Remove the sample from vacuum, quench in liquid nitrogren, measure off-line
Quenching experiments
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1. Implant (and measure) at elevated temperatures (RT-1000 K) 2. Remove the sample from vacuum, quench in liquid nitrogen, measure off-line
Quenching experiments
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1. Implant (and measure) at elevated temperatures (RT-1000 K) 2. Remove the sample from vacuum, quench in liquid nitrogren, measure off-line
Quenching experiments
Implanting 57Mn and 119In into silicon nitrides
- Damage or magnetic properties?
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Quenching experiments
Implanting 57Mn and 119In into silicon nitrides
- Damage or magnetic properties?
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307K 434K 535K 645K 768K 807K Hot Temperatures : Ni50Mn34In16