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IEEE EDS Japan Chapter
14:00-14:30
IEEE EDS Japan Chapter Annual Meeting (2011 Fiscal Year)
14:30-17:05 2011 IEDM Reports
February 1, 2012
■February 1, 2012 14:00-17:05 ■Sanjo Conference Hall, The University of Tokyo, Hongo Campus
IEEE EDS Japan Chapter 14:00-14:30 IEEE EDS Japan Chapter Annual - - PowerPoint PPT Presentation
IEEE EDS Japan Chapter 14:00-14:30 IEEE EDS Japan Chapter Annual - - PowerPoint PPT Presentation
IEEE EDS Japan Chapter 14:00-14:30 IEEE EDS Japan Chapter Annual Meeting (2011 Fiscal Year) 14:30-17:05 February 1, 2012 14:00-17:05 Sanjo Conference Hall, The University of 2011 IEDM Reports Tokyo, Hongo Campus February 1, 2012
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Executive Committee Members, 2011
Tenure：From January 1 to December 31, 2011 Chair Shin’ichiro Kimura（Hitachi） Vice-Chair Akira Toriumi （Unv. Tokyo） Secretary Kazuyoshi Torii （Hitachi） Treasurer Koji Kita （Unv. Tokyo）
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Executive Committee Members, 2012
Tenure：From January 1 to December 31, 2012 Chair Akira Toriumi （Unv. Tokyo） Vice-Chair Toru Mogami （NEC） Secretary Koji Kita （Unv. Tokyo） Treasurer Meishoku Masahara （AIST*）
*AIST ; National Institute of Advanced Industrial Science and Technology
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Reports on Activities in ２０１１
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Reports on Activities in ２０１１
Annual Meeting and IEDM 2010 Report Meeting January 27th University of Tokyo, Hongo Campus Attendees; 70 Meeting sponsored by EDS Japan Chapter
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IEEE EDS Japan Chapter
2010 IEDM Report Meeting
（１）Summary （２）CMOS （３）Memory Break （４）Power Device （５）Nano Device （６）Reliability Norikatsu Takaura （LEAP） Meishoku Masahara （AIST） Yoshitaka Sasago （Hitachi） Toshihide Yoshikawa （Fujitsu） Atsuhiro Kinoshita （Toshiba） Kiyoshi Takeuchi （Renesas ）
Reports on Activities in ２０１１
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IEEE EDS Japan Chapter 9th Student Award 2010
受賞者： Naotoshi Kadotani 角谷 直哉 （東京工業大学, Tokyo Institute of Technology） “Anomalous Electron Mobility in Extremely-Thin SOI (ETSOI) Diffusion Layers with SOI Thickness of Less Than 10 nm and High Doping Concentration of Greater Than 1x1018cm-3” (2010 IEDM) 受賞者： Sang Hyeon Kim 金 相賢（東京大学, The University of Tokyo） “Self-aligned Metal Source/Drain InxGa1-xAs n-MOSFETs Using Ni-InGaAs Alloy” (2010 IEDM) 受賞者： Choong Hyun Lee 李 忠賢 （東京大学, The University of Tokyo ） “Ge MOSFETs Performance: Impact of Ge Interface Passivation” (2010 IEDM) 受賞者： Xiaowei Song 宋 驍嵬 （東京大学, The University of Tokyo ） “Impact of DIBL Variability on SRAM Static Noise Margin Analyzed by DMA SRAM TEG” (2010 IEDM) 受賞者： Makoto Suzuki 鈴木 誠 （東京大学, The University of Tokyo ） “Direct Measurements, Analysis, and Post-Fabrication Improvement of Noise Margins in SRAM Cells Utilizing DMA SRAM TEG” (2010 Symp. on VLSI Technology) 受賞者： Kiichi Tachi 舘 喜一 （東京工業大学, , Tokyo Institute of Technology ） “Experimental Study on Carrier Transport Limiting Phenomena in 10 nm Width Nanowire CMOS Transistors” (2010 IEDM) 受賞者： Keita Yamaguchi 山口 慶太 （筑波大学, Tsukuba University） “Universal Guiding Principle for the Fabrication of Highly Scalable MONOS-Type Memories -Atomistic Recipes Based on Designing Interface Oxygen Chemical Potential-” (2010 IEDM)
Reports on Activities in ２０１１
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Sponsored & co-sponsored meetings
Meeting Name Date Attendees International Electron Devices Meeting 2010 January 27, 2011 70 IEEE EDS Distinguished Lecture
- Prof. John Robertson (Engineering Department,
Cambridge University, Cambridge, UK) ” Electronic properties of Germanium : oxide interfaces for future CMOS” February 16, 2011 30 WIMNACT 26 (Workshop and IEEE EDS Mini- colloquium on Nanometer CMOS Technology) February 9, 2011 35 IEEE EDS Distinguished Lecture
- Dr. Simon Deleonibus, Chief Scientist & Director
- f Leti, Grenoble France
“CMOS Nanoelectronics scaling and Technology Diversifications” June 17, 2011 25 IEEE EDS Distinguished Lecture
- Dr. Prof. Xing Zhou, Chiar, IEEE EDS SRC-AP
(Region 10) “Unification of MOS Compact Models with the Unified Regional Modeling Approach” August 26, 2011 25
Reports on Activities in ２０１１
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Meeting Name Date Attendees IEEE EDS Distinguished Lecture
- Prof. Enrique Miranda, Universitat Autònoma de
Barcelona, Spain “Failure analysis of MOS devices using spatial statistics” September 21, 2011 20 IEEE EDS Minicolloquium on Advanced Hybrid Nano Devices October 4-5, 2011 200 IEEE EDS Distinguished Lecture Professor of Electrical Engineering, Material Science and Engineering, Director of Research, Center for Integrated Systems, Stanford University, USA " Challenges in Nanoelectronic Devices and Integrations on Silicon Platform Today and Tomorrow" November 11, 2011 32 IEEE EDS Distinguished Lecture Professor Kenji Shiraishi, Tsukuba University “Interface Physics and Its Approach to Modern Devices -A Computational Physics Approach-” November 17, 2011
Sponsored & co-sponsored meetings
Reports on Activities in ２０１１
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* EDS News Letter * Use of Japan Council Mailing List * EDS Japan Chapter Homepage
http://www.ieee-jp.org/japancouncil/chapter/ED-15/
Sending Information to Members
Reports on Activities in ２０１１
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Activity Plan for 2012
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* Annual Meeting & 2011 IEDM Report Meeting * Sponsorship of DL Meeting, MQ and Workshop * Co-sponsorship and backup of Meetings * Student Award Presentation * Information Sending Use of Mailing List and HP http://www.ieee-jp.org/japancouncil/chapter/ED-15 Activities in 2012
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IEEE Electron Devices Society Membership
Fellow Senior Member Member Student Member IEEE Membership Grade Promotion to Senior Member First Step to Fellow
Anyone with 10 years in the profession http:/www.ieee.org
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IEEE EDS Japan Chapter
2011 10th Student Award Presentation
From this year, award name is changed from previous IEEE EDS Japan Chapter Student Award to new IEEE EDS Japan Chapter Student Award (VLSI) IEEE EDS Japan Chapter Student Award (IEDM).
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IEEE EDS Japan Chapter Student Award (VLSI)
受賞者： Rui Zhang （東京大学, The University of Tokyo） “High Mobility Ge pMOSFETs with ~1nm Thin EOT Using Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Post Oxidation” 受賞者： SangHyeon Kim （東京大学, The University of Tokyo ） “High Performance Extremely-Thin Body III-V-On-Insulator MOSFETs on a Si Substrate with Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering” 受賞者： Yasuhiro Nakajima （東京大学, The University of Tokyo ） “Phase Transformation Kinetics of HfO2 Polymorphs in Ultra-Thin Region”
IEEE EDS Japan Chapter Student Award (IEDM)
受賞者： Yoshiharu Yonai （東京工業大学, Tokyo Institute of Technology） “High drain current (>2A/mm) InGaAs channel MOSFET at VD=0.5V with shrinkage of channel length by InP” 受賞者： Teruyuki Ohashi （東京工業大学, Tokyo Institute of Technology ） “Experimental Evidence of Increased Deformation Potential at MOS Interface and Its Impact on Characteristics of ETSOI FETs” 受賞者： Tsunaki Takahashi （東京工業大学, Tokyo Institute of Technology ） “Thermal-Aware Device Design of Nanoscale Bulk/SOI FinFETs: Suppression of Operation Temperature and Its Variability” 受賞者： Tomoyuki Yokota （東京大学, The university of Tokyo） “Sheet-type Organic Active Matrix Amplifier System using Vth-Tunable, Pseudo-CMOS Circuits with Floating-gate Structure”
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IEEE EDS Japan Chapter
2011 IEDM Report Meeting (14:30-17:05)
(1) Summary 高浦則克氏（Asian Chair）(超低電圧デバイス技術研究組合) 14:30-14:45 (2) CMOS 昌原明植氏（ CIRCUIT AND DEVICE INTERACTION ）(産業技術総合研究所)
14:45-15:10
（3) Memory 福住嘉晃氏（ MEMORY TECHNOLOGY ）(東芝) 15:10-15:35 休憩 15:35-15:50 (4) Display and Sensor 糸長 総一郎氏（ DISPLAYS, SENSORS AND MEMS ） (ソニー) 15:50-16:15 (5) Nano Device 高柳万里子氏（ NANO DEVICE TECHNOLOGY ） (東芝) 16:15-16:40 (6) Powe Device 宮本恭幸氏（ QUANTUM, POWER, AND COMPOUND SEMICONDUCTOR ） (東工大) 16:40-17:05