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If anybody likes to keep this talks slides , please email me ! Roadmap of ultrafast energy-saving optica optical semiconductor devices to Year 2025 to Year 2025 --- <speed, energy, size> estimates of optical Micro Processor Unit ---

slide-1
SLIDE 1

If anybody likes to keep this talk’s slides, please email me!

Roadmap of ultrafast energy-saving optica

  • ptical

semiconductor devices to Year 2025 to Year 2025

  • -- <speed, energy, size> estimates of optical Micro Processor Unit ---

Yoshiyasu UENO

National Univ. of Electro-Communications (UEC) Tokyo, Japan

42 d d T k S t 22 2010 Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

1

42nd ssdm, Tokyo, Sept. 22, 2010

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SLIDE 2

Contents

[1] Total energy consumptions in ICT technology

Contents

[ ] gy p gy [2] Recent trends of optical-data-processing devices <speed, energy, size> [3] All-Optical gates: from principles to new potentials <speed, energy, size> [4] Crude estimates about “optical MPU” (long-term research) Co authors and Collaborations

(first time, too, to our knowledge)

Co-authors and Collaborations

Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

2

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SLIDE 3

[1] Energy consumptions in ICT-related systems

[1] Impacts of ICT energy consumptions

[1] Energy consumptions in ICT-related systems

Conventional Technol. S

Around 2005, Clk freq. reached 3 GHz. (electronic MPU’s)

In Data Centers of Google, Microsoft, etc. Nuclear Power-Station 1 GW / reactor

D l/

Nano-materials inside MPU’s are nearly melt. （37 years of Moore’s law, IEEE 2008)

ata Ce te s o Goog e, c oso t, etc

Clk freq.: ３ GHz, with similar MPU’s Heat-energy dissipation: 10 kW / sever rack

Data-center energy: 20 MW / data center

3.0 4.0 peed (GHz)

Si l

Dual/ Quad

saturating speed 0.0 1.0 2.0

rosessorclk s

Single processor

Cost of DRAM

We need ultrafast & energy-saving Optical Transistors

3

Pr

2008 1990 1980 2000

Calendar Year

p in future ! Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

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SLIDE 4

Electric-energy consumptions, 1970-2006

[1] Impacts of ICT energy consumptions

1000.0

(EJ)

y

100.0

he country (

electricity

10.0

系列1 系列2 系列3

generating supply in th

Japan P.R. China India

Japan

ply, for e

1 0

系列4 系列5 系列6

Supply for electricity s

EU (15) UK USA W ld UK

ergy supp

1.0

系列7

ary Energy annual total

World

mary ene

0.1 1970 1980 1990 2000 2010

Prima the a

Year

*1) Source: International Energy Agency (IEA), Paris,

Yoshiyasu Ueno, February 2010

Prim

1970 2010 1990 Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

) gy g y ( )

Energy balances of OECD countries and non-OECD countries. *2) 1 EJ= 1×1018 J.

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SLIDE 5

Macro-scopic:

Primary Energy Supplies (sum of electricity and non-electricity), 2006

[1] Impacts of ICT energy consumptions

90 100

2006)

Primary Energy Supplies

Ratios of energy for electricity

China

USA

EU

50 60 70 80 90

rgy Supply (EJ, 2

90 100

EJ, 2006) for non-electricity

for electricity

incl.

Japan China EU China

USA

10 20 30 40

tal Primary Ener

50 60 70 80

rgy Supply (

Vehicles, Jets, etc.

  • f today

Japan

China EU

Japan China India EU15 UK USA Tot

20 30 40

mary Ener

12,000

06)

GDP’s (2006)

Electric Vehicles, next ??

Chi

USA

EU

Japan

India

39% 43% 36% 39% 10

Japan China India EU15 UK USA T

  • tal Pri

*1) Source: International Energy Agency (IEA) Paris

6,000 8,000 10,000

×109 USD, 200

next ??

Japan China

39% *1) Source: International Energy Agency (IEA), Paris,

Energy balances of OECD countries and non-OECD countries. *2) 1 EJ= 1×1018 J.

2,000 4,000

Japan China India EU15 UK USA

GDP (×

Data Centers in USA consuming 1.5% of all electricity (D. Miller, Stanford).

not very large??  1 5% correspondes to 10 nuclear reactors!!

Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

not very large??  1.5% correspondes to 10 nuclear reactors!!

 We need energy-saving devices.

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SLIDE 6

Micro-scopic:

  • ne origin of ICT-energy consumptions

[1] Impacts of ICT energy consumptions Zetta

1 E+20 1.E+21

Tr-number times Clk-freq. has evolved by a factor of 106×104= 1010 (in 40 years) Tr・Clk Product

Tr number: 106 Exa

1.E+17 1.E+18 1.E+19 1.E+20

  • FLOPS speed has increased by 1010.

Tr number: 106 Clk freq.: 104

Moore’s magic

Peta

NEC Earth simulator -> Cray Jaguar, IBM Roadrunner -> NEC-Sun Tsubame ->

1 E+13 1.E+14 1.E+15 1.E+16

  • MIPS speed has increased by 104, only,

without supported by Tr number.

(reasonable)

Tera

1.E+10 1.E+11 1.E+12 1.E+13 Pentium Pro (1996)

Pen 4 (2002) Core 2 Quad (2007)

  • Already relying on parallel-processing MPU’s and software.

many-folded parallel-structures are probably pushing-up electric-energy consumptions (and costs). [hard to quantitatively characterize now though ]

Giga

Cray-1 ->

1.E+06 1.E+07 1.E+08 1.E+09 80386 (1985) (1996) 8086 (1978)

[hard to quantitatively characterize now, though.]

? for 2010-2050:

Increasing demands are

1.E+04 1.E+05 1.E 06

1960 1970 1980 1990 2000 2010 2020

  • no. of Trs. times clk freq. 10x every 4 yrs.

FLOPS 10x every 4 yrs.

  • Y. Ueno, February 2010

? for 2010-2050:

Increasing demands are FLOPS-type demands, or, MIPS-type demands ?? 6

Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

y y Instructions per sec. 10x every 7 yrs.

Sources: FLOPS from measured results, MIPS from wikipedia.

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SLIDE 7

to move from electronics to optics: its famous weakness

Latest degrees of integrations for optical-processing devices

[1] Impacts of ICT energy consumptions

g g p p g

Number of devices on one chip= 200 (Infinera, 2006)  evolving steadily, driven by industrial demands, g y, y ,

and approaching the number 2,300 in intel 4004 (1971). 2,300

ents

Electronic processor Intel 4004 (1971)

l compone

ne chip)

200

# of optical

(in on Eindhoven Univ. Technol., Netherlands

# source: M K Smit (Eindhoven U Technol ) IEEE LEOS Annual 2008

CIP Technologies, UK.

Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

7

M.K. Smit (Eindhoven U. Technol.), IEEE-LEOS Annual 2008.

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SLIDE 8

[2] Optical data processing “gates and memories” [2] Optical-data-processing gates and memories

  • Y. Ueno, UEC, 2010

All-Optical circuits w/ gates & memories

Optical data Optical data Optical data

Drive energy (electric dc-bias)

Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

8

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SLIDE 9

[2] Optical-data-processing “gates and memories” <speed, energy, size>

[2] Latest optical gates and memories

(2-1) Optical buffer memories (fundamental-research)

25Gb/s, 1pJ/bit, (30µm)2

M.T. Hill (Smit Gr., Eindhoven),

40-100Gb/s, 3pJ/bit, (10µm)2

T Katayama (Kawaguchi Gr ) 2009

40-160Gb/s, L= few mm long

  • E. Kehayas (Dorren Gr., Eindhoven)

planar, ring-laser.

  • T. Katayama (Kawaguchi Gr.), 2009,

Vertical, VCSEL.

planar, coupled-gates.

photonic-crystal gate

(FESTA, U. Tsukuba, AIST) photon-electron interactions

In bulk or MQW semiconductors

are used.

Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

9

  • K. Asakawa et al., J. of Phys. 2006
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SLIDE 10

[2] Latest optical gates and memories

[2] Optical-data-processing “gates and memories” <speed, energy, size> (2-2) All-optical gates (for practical signal-conversion, 2R/3R, demux, etc.)

SMZ-DISC scheme, with non-linear cross-phase modulation XPM

  • riginal-SMZ scheme, with XPM

Gate, 2000年

input

  • utput

0.2 0.3 0.4 0.5 0.6

Signal (a.u.)

0.2 0.4 0.6

Signal (a.u.)

Gate, 2006年 Gate, 2009年

input output input output

  • 50

+50 0.0 0.1

Delay (ps)

  • 50

+50 0.0

Delay (ps)

168Gb/s, 2 pJ/bit, L≅ 1mm

  • S. Nakamura, Ueno, Tajima (NEC),

input output

wavelength-conversion

640Gb/s

  • T. Hirooka (Tohoku U. & NEC), Demux.

320Gb/s, 2.5 pJ/bit, L≅ 1mm

  • Y. Liu (Eindhoven), wavelength-conv.

Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

10

  • T. Hirooka (Tohoku U. & NEC), Demux.
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SLIDE 11

[2] Latest optical gates and memories

[2] Optical-data-processing “gates and memories” <speed, energy, size>

Converter XOR AND 2R/3R etc

(2-2) All-optical gate (fundamental-research in our univ. UEC, Tokyo)

SMZ-DISC scheme (XPM) in our group

Clock oscillator (UEC) Flip-Flop (Eindhoven, Tsukuba) Converter, XOR, AND, 2R/3R, etc.

  • 20
  • 10

+10 +20

Distance in air, z (mm)

Wavelength (nm)

Clock oscillator (UEC) Gate, 2008年 Oscillator, 2005-2008年

1.0 1.5

y (a. u.)

Gated waveform, 1540 nm

1 0 0 1 0 0 0 1 0 1 1 1 …

  • 20

1546 1548 1550 1552

Bm/nm)

g ( )

550 GHz

0.5

Intensity

  • 60
  • 40

Intensity (dB 550 GHz

  • 75
  • 50
  • 25

+25 +50 +75

Time (ps)

193.0 193.5 194.0

Optical frequency (THz)

200Gb/s, 3 pJ/bit, L≅ 1mm

Δ2ps/40GHz optical clock oscillator

Suzuki Nakamoto et al (CLEO2006 NANO2008)

(160G-class) Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

11

Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

Sakaguchi, et al. (Opt. Comm. 2009) Suzuki, Nakamoto, et al. (CLEO2006, NANO2008)

slide-12
SLIDE 12

200-Gb/s gated waveforms,

in the middle of our experimental studies

[2] Latest optical gates and memories

in the middle of our experimental studies

Jun Sakaguchi, et al., Opt. Comm. 2009.

good !!

b tt

Distance, z (mm)

good !!

better

(accelerated)

y (a. u.)

badly gated

(too slow)

Intensity Time (ps) Data-pattern-induced amplitude noise 12

Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

slide-13
SLIDE 13

[2] Latest optical gates and memories

Clock oscillator (UEC)

COE-research: DISC-loop-type mode-locked pulse source

2-ps, 40-GHz pulse and comb generation, 2005-2006

  • R. Suzuki, et al., CLEO, Long Beach, USA, May 2006.

.) .)

Auto-correlation trace

Optical-frequency-comb spectrum

0.5 1.0

tensity (a. u.

13.5 dB 25ps = 41GHz 0.5 1.0

tensity (a. u.

13.5 dB 25ps = 41GHz

  • 60
  • 40
  • 20

nsity (dBm)

330pm = 41GHz

  • 60
  • 40
  • 20

nsity (dBm)

330pm = 41GHz Original scheme from,

  • Y. Ueno, et al., Appl. Phys. Lett. Oct. 2001
  • 37.5 -25 -12.5

+12.5 +25 +37.5 0.0

Delay (ps) SHG Int

  • 37.5 -25 -12.5

+12.5 +25 +37.5 0.0

Delay (ps) SHG Int

1546 1548 1550 1552 1554

  • 80

60

Wavelength (nm) Inten

1546 1548 1550 1552 1554

  • 80

60

Wavelength (nm) Inten y (p ) y (p )

measured t-f product, Δt⋅Δf= 0.53 (1.2 times that of a Gaussian pulse)

20

m)

20

ignal V )

  • 50 -25

25 50 10 20 Delay (ps)

Auto-correlation Signal Intensity ( mV )

1553 1554 1555 1556 1557
  • 80
  • 60
  • 40
  • 20

Wavelength (nm) Intensity (dBm)

(3) Gloop> 0dB m]

Proof of principle (1), threshold behavior Proof of principle (2), linearly controlled pulse widths

6

ps)

6

ps)

1553 1554 1555 1556 1557
  • 80
  • 60
  • 40
  • 20

Wavelength (nm) Intensity (dBm)

  • 50 -25

25 50 10 20 Delay (ps)

Auto-correlation Signal Intensity ( mV )

1553 1554 1555 1556 1557
  • 80
  • 60
  • 40
  • 20

Wavelength (nm) Intensity (dBm

  • 50 -25

25 50 10 Delay (ps)

Auto-correlation Si Intensity ( mV

(2) Gloop≥ 0dB near threshold

(1) Gloop< 0dB

  • 30
  • 20
  • 10

put optical power, Pout [dB (2) (3) (1) +0 7 7.2dB

1 2 3 4 5 6

Output pulse width, τ [ps] easured width of pulse, τ (p

1 2 3 4 5 6

Output pulse width, τ [ps] easured width of pulse, τ (p

solid curve: 10 GHz dashed curve: 40 GHz

13

Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

Delay (ps)

  • 10

+10 +20 Pulse loop gain, G loop [dB] Outp

+0.7

1 2 3 4 5 6

MZI's delay time, Δt [ps]

Delay time in DISC, Δt (ps)

Me

1 2 3 4 5 6

MZI's delay time, Δt [ps]

Delay time in DISC, Δt (ps)

Me

d s ed cu ve: 0 G

slide-14
SLIDE 14

Flip-Flop (Eindhoven, Tsukuba)

XOR, AND, 2R/3R, etc.

fundamental research of “gates” single-longitudinal-mode mode-locking, 2008

Clock oscillator

Clock oscillator (UEC) precise only-one-mode lasing

(with using high-Q etalon filter designed by JAE Japan)

precise, only-one-mode lasing

  • ut of Δ10-MHz-spacing modes.

(Nakamoto, et al. OSA-NANO 2008)

Original features of this scheme of ours:

 500 GH BW b l ti i t ti ibilit ( tl )  500-GHz-BW comb, low power consumption, integration possibility (presently)  precise optical frequency, fopt (locked to external DFB source, fopt)  precise repetition frequency, fR (locked to dielectric etalon’s FSR, fR) i b l h f (l k d di l i d l i Δ )

14

19

Ultrafast Optical Logic Lab., UEC

 precise comb envelope shape, fBW (locked to dielectric MZI delay time, Δt)

slide-15
SLIDE 15

status of Modeling-research (optical gates)

[2] Latest optical gates and memories

fairly-good

Ueno et al., 2001-2002 ECOC, IE3 PTL, IEICE Trans.

Subject: about the useful correlation between

from the hybrid-integrated SMZ device

Subject: about the useful correlation between sensitive dependences of waveform and spectrum, on the optical phase bias, ΔΦB

meas. meas. calc.

C l i

veforms log scale

Conclusion: we’ll be able to feedback-control

wav in the

the 160-Gb/s Demux by monitoring the “supervisory” spectrum Ultrafast Optical Logic Lab., UEC

slide-16
SLIDE 16

[2] Latest optical gates and memories

fairly-good

status of Modeling-research (optical gates)

  • J. Sakaguchi et al., JJAP 2005 and 2008

subject: about one generic issue for DATA conv. in the original DISC design calculated measured

s ale aveforms e log sca wa in th

To solve this, within DISC scheme, we need a kind of imbalance factor between the two interferometer arms.

Ultrafast Optical Logic Lab., UEC

slide-17
SLIDE 17

[3] Physics and potentials, of all-optical gates

<speed, energy, size>

[3] Physics of all-optical gates Quote: “All-optical semiconductor gate seems too complicated”

  • -- Prof. Guifang LI, CREOL/UCF, USA.

Injection Current (mA)

Inversion-population semiconductors (SOA’s)

  • nonlinear dependences → unsaturated gain G0, gain-saturation energy Psat, optical 3R/2R.

p p ( )

  • linear dependences (many ways) → in gate speed, energy, size.

0.50 1.00

ift, ΔΦ/π

42 GHz 84 GHz 168 GHz

Ueno et al., JOSAB 2002

“not so complicated !!”

10 50 100 500 0.10

Injection current (mA) Phase shi

Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

17

Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

j ( )

linear dependence

slide-18
SLIDE 18

Physics ：

Refractive-index modulations, etc.,

due to excited-electron-hole-density modulations

K Tajima (NEC 1993)

[3] Physics of all-optical gates

Holes

Excited electrons in conduction band

Optical output Z

  • K. Tajima (NEC 1993)
  • J. Sokoloff (Princeton 1993)

Optical pulses Amplified pulses

Optical output X’

SOA

Excited holes in valence band

Optical input X Optical input Y Step wise processes in generating optical outputs Z and X’

t

Optical input Y

and

  • ptical acceleration Y or A

Step-wise processes in generating optical outputs, Z and X’.

(1) Stimulated amplification of optical inputs X and Y.

⇒ (2) electron density is modulated (in materials). ⇒

Electrons

⇒ (3) refractive index is modulated (in materials). material’s rise time= 100 fs (fall time is slower). ⇒ (4) optical phase is modulated (in optical signal X or Y). ⇒ (5) d l t d li ht h tl bi d b f t ’ t t

D i d l t i j ti (d bi t)

⇒ (5) modulated lights are coherently combined, before gate’s output. ⇒ (6) new optical outputs, Z and X’ are generated.

Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

18

Drive energy= dc-electron-injection energy (dc-bias current)

slide-19
SLIDE 19

Speed of gates

[3] All-optical gates/ speed

faster than material-relax. speed,

after optically accelerating the material

Holes

Origin: R. Manning (BT), EL 1994

Optical output Z

Optical pulses Amplified pulses

Optical output X’

SOA

t

Optical input X Optical input Y

and

  • ptical acceleration Y or A
  • ptical acceleration Y or A

(seed cw or clk) Drive energy= dc-electron energy

Electrons

  • For gates, this acceleration is equivalent to “faster materials”

gy gy

For gates, this acceleration is equivalent to faster materials

  • Energy consumption is equivalent to them, as well.

experimentally recognized.

(Sakaguchi, et al., Opt. Express 2007)

Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

19

slide-20
SLIDE 20

Speed of gates, more simply

Sakaguchi, et al., Opt. Express 2007 Ueno et al JOSAB 2002

[3] All-optical gates/ speed

material level: nonlinear dependence

Linear dependences after optical acceleration

Ueno et al., JOSAB 2002

Principle of acceleration (in SOA)

50 100

1/τeff (GHz)

B#3, Iop = 200 mA measured calculated

|excited>

(quasi fermionic)

material level: nonlinear dependence

Principle of acceleration (in SOA)

  • 50 -40 -30 -20 -10

+10 +20 +30 5 10

Recovery rate,

(quasi-fermionic)

  • relax. due to stimulated-emission

(with seed cw or clock) = optical acceleration

Holding-beam input power (dBm)

POP

|

continuous pump (efficient) = optical acceleration gate performance: linear dependences show-up.

energy per bit ∝ speed (due to Joule loss) helpful for designs and experiments

103 104

  • nsumption,

ΦNL=0.3 π)

B#4 1100 µm B#3 500 µm

measured

|g>

(transparent-state)

102 103

ic dc power c (mW, @ΔΦ

  • ptical phase mod. ∝ electron dens. mod.

ti l h d ∝ i t ti l th

several other linearities:: 20

10 100 1000

Electri Bandwidth, B (GHz)

Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

  • ptical phase mod. ∝ interaction length
  • ptical phase mod. ∝ electron-photon overlap
slide-21
SLIDE 21

Speed of gates  numbers at operating point (200Gb/s)

[3] All-optical gates/ speed

Principle of gate = electron-pump

w/ nonlinear pol. rot.

  • S. Nakamura et al., Appl. Phys. Lett. 2001
  • J. Sakaguchi et al., Opt. Comm. May 2009

Optical pulses Amplified pulses Holes

168G wavelength conversion (2000)

SOA

t

  • ptical input (30fJ/bit)

0.4 0.5 0.6

a.u.)

0 4 0.6

a.u.)

168G input data 168G output data

Electrons

acceleration (cw, 100 fJ/bit)

  • 50

+50 0.0 0.1 0.2 0.3

D l ( ) Signal (a

  • 50

+50 0.0 0.2 0.4

D l ( ) Signal ( Delay (ps) Delay (ps)

material > 60ps  gate recovery < 6ps

l t ti

1×107 electrons/bit

dc-electron energy

・ electron consumption= 1×107 electrons/bit ・ electric-energy consumption= 3 pJ/bit nearly-regardless of material’s speed (in this regime)

Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

21

slide-22
SLIDE 22

[3] all-optical speed  energy

Energy-efficiency of gates  new potentials in near-future (--2025)

Other institutes: packet-routing, buffer memories, integrated 2R-subsystem.

300 pJ/bit 30 pJ/bit (previously) ・ blue-shift filter  Nielsen et al

Opt Express 2006

Our group (UEC): following directions (for energy-saving)

(previously) ・ nonlinear-polarization rotation  Sakaguchi et al., Opt. Comm. 2009 blue shift filter  Nielsen et al., Opt. Express 2006

・ spectral synthesis scheme  going on (Nishida et al

IEEE LEOS 2009)

3 pJ/bit

(present)

・ spectral-synthesis scheme  going-on (Nishida et al., IEEE-LEOS 2009) ・ (non-deg. ->) degenerate-scheme  going-on

[free from polarization-insensitivity requirements]

（UEC-NICT collaboration, FY2007-）

・ QW-band-engineering, for enhancing refractive-index mod.

[ ee

  • po a

at o se s t ty equ e e ts]

not yet started but, from near-future

0.3 pJ/bit (near future)

  • efficient pump (optical)

100-fJ to 30-fJ (e.g., ACQW) further Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

22

  • low-dim., surface plasmon, nano-photo

(far future)

slide-23
SLIDE 23

[3] All-optical gates/ size

Size of gates  interaction L, new potentials in near-future (--2025)

energ s ppl of 3 pJ/bit that is 1×107/bit of electrons in interaction length 1 mm dc-electron pump (at present)

Volume density of excited electrons > 2×1018cm-3 ?

energy supply of 3 pJ/bit, that is, 1×107/bit of electrons, in interaction length= 1 mm

exeprimentally: stock= relatively dilute (2×1017cm-3) ！

Sakaguchi et al., Optics Express 2007 through present

+600 +800 +1000

E-Ec (meV)

conduction band

2.0 4.0 6.0 8.0 10.0

+200 +400 Density of electron states, Ne(E) x10+17(cm-3.meV-1)

Energy, E

dilute electrons

(non-degenerate)

n= p= 2×1017cm-3

 flow (modulation)= less efficient (at present)

+800 +1000

eV)

10-times more electron density （2×1018cm-3 ）,

conduction band

  • ne of new potentials

Characterstic temperatures

2.0 4.0 6.0 8.0 10.0

+200 +400 +600 +800

Energy, E-Ec (me

dense electrons (degenerate)

y （ ）,  10-times shorter gate length (L= 100 µm) (Hetero-barrier energy seems not enough, at present)

Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

23

(AlGaInP/GaInP laser, 1993)

Density of electron states, Ne(E) x10+17(cm-3.meV-1)

slide-24
SLIDE 24

volume density of excited electrons (cm-3)

[3] All-optical gates/ size

Metals

1E22

Al Au, Ag, Cu

Plasmonics

(very lossy)

volume density

1E20

Ti:Al2O3, Nd: YAG

Mn: GaAs

Spintronics “half-metal”

Semi-metals

1E18

2 3

super-dense electrons in III-V, 1018～1019

1E16 Er:SiO2 III-V in all-optical gates (presently) unexpectedly dilute, 2×1017

Semi-conductors

(un-doped, intrinsic) 1E16 1E14

background levels

partially after Charles Kittel,

Introduction to Solid State Phys.,

1E14 Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

y

1953-1996

24

slide-25
SLIDE 25

Super-high-density electron-confinement, with new hetero-barrier systems

[3] All-optical gates/ size

Higher-Hetero (proposal)

at present future

presently

Direct-Mod pump laser

0 98

0.87 µm

GaAs/AlGaInP

(920 meV)

p

50-GHz direct-mod.

g (eV)

2.0 2.5

1.55 µm

1.31 µm 1.31 µm

AlGaInAs/InP

(750 meV)

(DR laser)

0.98 µm

InGaAs/AlGaAs (760 meV)

all-optical’s

(920 meV)

920 meV hetero-barrier

nergy, Eg

1.5

µ

InGaAs/InP

(550 meV)

µ

InGaAsP/InP (400 meV)

(750 meV)

920 meV

(= kBT×35)

dgap En

1.0

550 meV *) 伝導帯の状態密度も

Band

0 0 0.5

) 伝導帯の状態密度も やや増加する。 そして、電流注入⇔光注入を、分離。

Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

25

0.0

slide-26
SLIDE 26

[4] Optical micro-processor, near Year 2025

[4] Optical MPU near 2025 near-future <speed=300G, energy=0.3pJ/bit, size(interaction)= 100µm>

Electronic

Optical processor

Electronic Specification

intel 4004

Present Near Future Demo Year

Year 1971

Year 2000 2010

Year 2025 Optical processor

Demo Year

Year 1971

Year 2000-2010

Year 2025

Speed 500 kb/s 200-300 Gb/s

300 Gb/s

E ( bi ) 3 10 J /bi / 0 3 J /bi / Energy (per bit) 3-10 pJ /bit/gate 0.3 pJ /bit/gate 500×500 µm

2

(w/ 100-µm interaction) 1,000×3,000 µm

2

70×70 µm

2

Size (per gate)

2,300 gates

(6 chips on 3-inch wafer) several 2,300 transisters Number of gates (per chip) Energy dissipation (per chip)

200 Watt

Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

26

Optical processor 4004

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SLIDE 27

Relative performance of optical-processor 4004

[4] Optical MPU near 2025 Zetta

1 E+20 1.E+21

Tr・Clk Product

Exa

1.E+17 1.E+18 1.E+19 1.E+20

Peta

NEC Earth simulator -> Cray Jaguar, IBM Roadrunner -> NEC-Sun Tsubame ->

1 E+13 1.E+14 1.E+15 1.E+16

intel 4004 (1971)

Core 2 Quad

Tera

1.E+10 1.E+11 1.E+12 1.E+13 Pentium Pro (1996)

Pen 4 (2002)

(1971)

Core 2 Quad (2007)

Giga

Cray-1 ->

1.E+06 1.E+07 1.E+08 1.E+09 80386 (1985) (1996) 8086 (1978)

Earlier statements:

  • already relying on parallel-processing structures,

which are probably pushing-up their electric energy consumptions

1.E+04 1.E+05 1.E 06

1960 1970 1980 1990 2000 2010 2020

  • no. of Trs. times clk freq. 10x every 4 yrs.
  • Y. Ueno, February 2010

their electric-energy consumptions.

  • Increasing demands in 2010-2050 are

FLOPS-type demands or MIPS-type demands?? 27

Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

FLOPS 10x every 4 yrs. Instructions per sec. 10x every 7 yrs.

出典： FLOPSは市販PC計測結果、MIPSはwikipedia資料。

slide-28
SLIDE 28

Relative performance of optical-processor 4004

[4] Optical MPU near 2025 Zetta

1 E+20 1.E+21

Tr・Clk Product

Exa

1.E+17 1.E+18 1.E+19 1.E+20

Optical processor (estim.)

alternative to Moore’s law

number-integration

Peta

NEC Earth simulator -> Cray Jaguar, IBM Roadrunner -> NEC-Sun Tsubame ->

1 E+13 1.E+14 1.E+15 1.E+16

Core 2 Quad

intel 4004 (1971)

Tr・Clk matches to Pentium Pro(1996)

Tera

1.E+10 1.E+11 1.E+12 1.E+13 Pentium Pro (1996)

Pen 4 (2002)

Core 2 Quad (2007)

(1971)

(M)IPS matches to Core 2 quad (2007).

Giga

Cray-1 ->

1.E+06 1.E+07 1.E+08 1.E+09 80386 (1985) (1996) 8086 (1978)

FLOPS will be weak.

Power consumption: 200 Watts

1.E+04 1.E+05 1.E 06

1960 1970 1980 1990 2000 2010 2020

  • no. of Trs. times clk freq. 10x every 4 yrs.
  • Y. Ueno, February 2010

28

Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

FLOPS 10x every 4 yrs. Instructions per sec. 10x every 7 yrs.

出典： FLOPSは市販PC計測結果、MIPSはwikipedia資料。

slide-29
SLIDE 29

sample-spec. numbers of optical-80386

250×250µm2 o-Tr’s

[4] Optical MPU near 2025

e-80386 e-Core2_quad

  • ptical 80386

(32bit) (32bit/64bit) (32bit) 250×250µm o-Tr s

  • n 6” GaAs wafer

(32bit) (32bit/64bit) (32bit)

1985 2007 2025

unit 1 Clk Hz 1.20E+07 2.60E+09 3.00E+11 2 Tr 275 000 2 000 000 000 275 000 2 Tr 275,000 2,000,000,000 275,000 Clk*Tr 3.30E+12 5.20E+18 8.25E+16 Clk*Tr (relative) 6.35E-07 1.00E+00 1.59E-02 3 Flops 1 2E+05 4 0E+10

  • 3

Flops 1.2E 05 4.0E 10 4 (M)IPS, measured and estimated 1.10E+07 6.00E+10 2.75E+11 (M)IPS (relative) 1.83E-04 1.00E+00 4.58E+00 5 power consumption Watt 3 80 2.00E+04 20 kW p p 6 energy / instruction J 2.73E-07 1.33E-09 7.27E-08 energy / instruction fJ 2.73E+08 1.33E+06 7.27E+07 energy / instruction (relative) 1 5.45E+01 7 energy / clk J 2.50E-07 3.08E-08 6.67E-08 energy / clk fJ 2.50E+08 3.08E+07 6.67E+07 energy / clk (relative) 1 2.17E+00 29

Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

slide-30
SLIDE 30
  • ptical-processor 80386 (with 300,000 gates)

advantage of serial-processor

[4] Optical MPU near 2025 i l 80386 (

serial-processor

advantage of serial processor

latency, synchro issues  1/100 or less programming costs, risks  1/100 or less

1.E+12 1.E+13

Core2-quad

(2007)

  • Clk: 100x
  • ptical-80386 (estim.)

 technical efficiency  100x / 15 yrs

parallel

1.E+10 1.E+11

e-80386

(1985)

(2007)

  • MIPS: increases
  • energy per clock: comparable (70 nJ/clk)

( ll l ti t C 2 d)

1.E+08 1.E+09

(all relative to Core2-quad)

c

1.E+06 1.E+07

Possible to integrate??

1.E+05 1980 2000 2020 2040

1980 2000 2020 2040

Possible to integrate??

250×250µm2

  • -Tr’s
  • n 6” GaAs wafer

⇒ 275,000 Tr’s (=80386)

Previously, Tr number×Clk: 100x / 8 yrs FLOPS 100x / 8 yrs

1960

Q t l t i hi t Opto-electronics history

30

Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

MIPS 100x / 15 yrs

Quantum-electronics history

slide-31
SLIDE 31

Summary (ssdm 2010)

If anybody likes to keep this talk’s slides, please email me!

  • Impacts of ICT-related energy consumptions

e.g.: energy supply to Data centers in USA: 10 nuclear reactors g gy pp y heat energy from one server rack: 20-kW level. many-folded parallel-data-processes will the best for all applications, thru. 2050 ?

  • <speed, energy, size> of all-optical gates, at present: <200G, 3 pJ/bit, length, 1 mm>
  • <speed, energy, size>, 2nd or 3rd generation: <300G, 0.3 pJ, 250 µm2>
  • in Materials Research (semi-classical quantum):
  • ptical acceleration (incl. gate scheme),

electron-photon interaction (little studied), higher-density excitations (w/ larger hetero-barrier). ti l 4004 MIPS bl t C 2 d El t i 200W

  • optical-4004: MIPS, comparable to Core2 quad. Electric energy, 200W.
  • optical-80386: 300,000 gates. Energy per clk, comparable to Core2 quad.

(this will probably save energy and costs, for a group of serial-process-oriented tasks.)

Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

31

an alternative to 40-year-long Moore’s law

slide-32
SLIDE 32

Thanks to Co-authors and Collaborations Co-authors: Co authors:

Jun Sakaguchi, PhD course, UEC Rei Suzuki, master course, UEC Takashi Ohira, master course, UEC Takashi Ohira, master course, UEC Ryoichi Nakamoto, master course, UEC Fellran Salleras, postdoc, UEC (from ETH, Laussanne) Mads L. Nielsen, visiting researcher from Technical Univ. Denmark (DTU) , g ( ) Kohsuke Nishimura, KDDI Labs. Naoya Wada and Satoshi Shinada, NICT Labs. and several more.

Collaboration:

Jesper Mork, Technical Univ. Denmark (DTU) Juerg Leuthold, Karlsruhe Univ. Kiyoshi Asakawa, NIMS (Univ. Tsukuba) Shigeru Nakamura, NEC Labs. Harm Dorren, COBRA, Eindhoven Univ. Technology Jian Wu, Beijing Univ. Posts and Telecoms (BUPT) K.V. Reddy, Pritel Inc., Chicago USA

Ultrafast Optical Logic Lab., UEC Ultrafast Optical Logic Lab., UEC

Alistair Poustie, CIP Technologies, UK, and several more institutes. 32