SiPMs with bulk integrated resistors Future perspectives Concept - - PowerPoint PPT Presentation

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SiPMs with bulk integrated resistors Future perspectives Concept - - PowerPoint PPT Presentation

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SiPMs with bulk integrated resistors Future perspectives Concept of SiPMs with Bulk Integrated Quench Resistors SiPMl concept First results from the prototype production Future perspectives J. Ninkovic 1 , L. Andricek 1 , C.

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SLIDE 1

SiPMs with bulk integrated resistors – Future perspectives –

  • J. Ninkovic1 , L. Andricek1, C. Jendrysik1, G. Liemann1, G. Lutz2, H. G. Moser1, R. H. Richter1

1Max Planck Institute for Physics, Semiconductor Laboratory, Munich, Germany 2PN Sensor GmbH, Munich, Germany

  • Concept of SiPMs with Bulk Integrated Quench Resistors – SiPMl concept
  • First results from the prototype production
  • Future perspectives
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SLIDE 2

Polysilicon Quench Resistors

Light 2011, Ringberg Castle, Germany 2

Complex production step Critical resistance range

influenced by: grain size, dopant segregation in grain boundaries, carrier trapping, barrier height

Rather unreliable process step and an absorber for light

  • M. Mohammad et al.

‘Dopant segragation in polycrystalline silicon‘,

  • J. Appl. Physics, Nov.,1980

Jelena Ninkovic

polysilicon

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SLIDE 3

SiPM cell components  SiMPl approach

Light 2011, Ringberg Castle, Germany 3

n+ p+ n- non-depleted region n- non-depleted region n- depleted gap region n

Vbias n+ p+ resistors

high field

AD RQ CD CC Vbias anodes

Jelena Ninkovic

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SLIDE 4

SiPM cell components  SiMPl approach

Light 2011, Ringberg Castle, Germany 4

n+ p+ n- non-depleted region n- non-depleted region n- depleted gap region n

Vbias n+ p+ resistors

high field

anodes Resistor matching requires thin wafers !

<<450mm

Jelena Ninkovic

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SLIDE 5

Light 2011, Ringberg Castle, Germany 5

SOI wafers

sensor wafer handle wafer

  • 1. implant backside
  • n sensor wafer
  • 2. bond sensor wafer

to handle wafer

  • 3. thin sensor side

to desired thickness

  • 4. process SiMPl arrays
  • n top side

sensor wafer handle wafer

  • 1. implant backside
  • n sensor wafer
  • 2. bond sensor wafer

to handle wafer

  • 3. thin sensor side

to desired thickness

  • n top side

Industrial partners MPI Sem. Lab

10pA/10mm²

Jelena Ninkovic

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SLIDE 6

Light 2011, Ringberg Castle, Germany 6

Simulations

Not a simple resistor problem

  • bulk resistivity
  • sensor thickness
  • pitch size
  • gap size

Influence

  • carrier diffusion from top and

bottom layer into the resistor bulk

  • sideward depletion

Extended device simulations performed and showed promising results for both small (25mm) and big (100mm) cells.

cylindrical approximation of hexagons for quasi 3d simulation Ninkovic et al., NIM A, 610, Issue 1

Jelena Ninkovic

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SLIDE 7

Jelena Ninkovic Light 2011, Ringberg Castle, Germany 7

Advantages and Disadvantages Advantages:

  • no need of polysilicon
  • free entrance window for light, no metal necessary within the array
  • coarse lithographic level
  • simple technology
  • inherent diffusion barrier against minorities in the bulk -> less optical

cross talk

Drawbacks:

  • required depth for vertical resistors does not match wafer thickness
  • wafer bonding is necessary for big pixel sizes
  • significant changes of cell size requires change of the material
  • vertical ‘resistor‘ is a JFET -> parabolic IV -> longer recovery times
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SLIDE 8

Light 2011, Ringberg Castle, Germany 8

Prototype production >100 different geometrical combinations

6mm 6mm

30x30 arrays 10x10 arrays

Jelena Ninkovic

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SLIDE 9

Light 2011, Ringberg Castle, Germany 9

Bulk doping Standard deviation 1—2% of the mean value

  • ver the wafer

Jelena Ninkovic

  • Critical parameter
  • Bulk doping variation of the top wafers measured on 10 diodes*/wafer (CV)

(*test diodes without high energy implantation)

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SLIDE 10

Jelena Ninkovic Light 2011, Ringberg Castle, Germany 10

Prototype production

High homogeneity over big distances! 6 100 cells arrays placed over 6mm distance

High homogeneity within the array! High linearity!

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SLIDE 11

Fill factor & Cross Talk & Photon Detection Efficiency

Pitch / Gap Fill factor Cross talk meas. (DV=2V) PDE calc. (DV=2V) PDE calc. (DV=5V) 130mm / 10mm 85.2% 29% 39% 61% 130mm / 11mm 83.8% 27% 38% 60% 130mm / 12mm 82.4% 25% 37% 59% 130mm / 20mm 71.6% 15% 32% 52%

Jelena Ninkovic Light 2011, Ringberg Castle, Germany 11

Produced SiMPl devices have the world record in the fill factors! PDE estimate:

  • Optical entrance window: 90% @400nm
  • Geiger efficiency : 50% @ 2V overbias 80% @5V overbias
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SLIDE 12

Jelena Ninkovic Light 2011, Ringberg Castle, Germany 12

DV=2V DV=1V

Hamamatsu MPPC SiMPL

DV=2V DV=1V

Produced SiMPl devices have the world record in the fill factors and still lower cross talk!

No special cross talk suppression technology applied just intrinsic property of SiMPl devices

Fill factor & Cross Talk

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SLIDE 13

Quenching ability

Jelena Ninkovic Light 2011, Ringberg Castle, Germany 13

In an ideal device the dark current through a diode is given by: I = DC∙G∙e with DC dark count rate, G internal gain and elementary charge e. Contribution of optical crosstalk (OCT) has to be taken into account Dark counts and gain  a theoretical current Static IV  measured Dark current The current ratio as a function of overbias at different temperatures was studied.

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SLIDE 14

Quenching ability

Jelena Ninkovic Light 2011, Ringberg Castle, Germany 14

Current ration vs. overbias for SiMPl device Overbias voltage vs. resistor for a ratio of R = 2. More details:

  • C. Jendrisyk et al.

DOI: 10.1016/j.nima.2011.10.007 accepted for publication

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SLIDE 15

Dark rate

Jelena Ninkovic Light 2011, Ringberg Castle, Germany 15

10x10array of 130mm pitch Due to the non optimal process sequence of the high field processing ~10MHz @300K for 4V overbias Normal operation up to 4.5V overbias @227K

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SLIDE 16

Resistor behavior

Jelena Ninkovic Light 2011, Ringberg Castle, Germany 16

Resistor value designed for the room temperature operation 350kW @ -50°C 920kW @ -50°C

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SLIDE 17

@223K

Detection of particles

Jelena Ninkovic Light 2011, Ringberg Castle, Germany 17

Excellent time stamping due to the fast avalanche process (<1ns) MIP gives about 80pairs/mm  huge signal in SiPM allows operation at small DV Reduction of dark rate and cross talk by order of magnitude

10% GE still gives >98% MIP detection

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SLIDE 18

Detection of particles

Jelena Ninkovic Light 2011, Ringberg Castle, Germany 18

Dark rate: 1 MHz/mm² = 1 hit/µm²/s = O(Belle II) With 20 µm pitch and 12 ns time stamp: occupancy: 2.5 x10-6 Power (analogue): ~ 5 µW/cm² Dominated by dark rate Possible problems:

  • Radiation hardness (dark rate increases due to bulk damage)
  • Cross talk – low with low overbias
  • Efficiency (fill factor)
  • Digital power
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SLIDE 19

n+ n- non-depleted region n- non-depleted region n- depleted gap region n

Next generation SiMPl devices

Jelena Ninkovic Light 2011, Ringberg Castle, Germany 19

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SLIDE 20

n+ n- non-depleted region n- non-depleted region n- depleted gap region n

Next generation SiMPl devices

Jelena Ninkovic Light 2011, Ringberg Castle, Germany 20

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SLIDE 21

n+ n- non-depleted region n- non-depleted region n- depleted gap region n

Next generation SiMPl devices

Jelena Ninkovic Light 2011, Ringberg Castle, Germany 21

TDC, Photon counter, active recharge Cell electronics Cell electronics

Topologically flat surface High fill factor Adjustable resistor value Pitch limited by the bump bonding

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SLIDE 22

n+ n- non-depleted region n- non-depleted region n- depleted gap region n

Next generation SiMPl devices

Jelena Ninkovic Light 2011, Ringberg Castle, Germany 22

Topologically flat and free surface High fill factor Sensitive to light

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SLIDE 23

n+ n- non-depleted region n- non-depleted region n- depleted gap region n

Next generation SiMPl devices

Jelena Ninkovic Light 2011, Ringberg Castle, Germany 23

Topologically flat and free surface High fill factor Sensitive to light

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SLIDE 24

n+ n- non-depleted region n- non-depleted region n- depleted gap region n

Next generation SiMPl devices

Jelena Ninkovic Light 2011, Ringberg Castle, Germany 24

TDC, Photon counter, active recharge Cell electronics Cell electronics

Topologically flat and free surface High fill factor Sensitive to light

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SLIDE 25

n+ n- non-depleted region n- non-depleted region n- depleted gap region n

Next generation SiMPl devices

Jelena Ninkovic Light 2011, Ringberg Castle, Germany 25

TDC, Photon counter, active recharge Cell electronics Cell electronics

Topologically flat and free surface High fill factor Sensitive to light

sensor wafer handle wafer

  • n sensor wafer
  • 2. bond sensor wafer

to handle wafer

  • 3. thin sensor side

to desired thickness

  • 4. process SiMPl arrays
  • n top side

sensor wafer handle wafer

  • 1. Structured implant on backside
  • 5. Etching backside

& flip chipping on back side

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SLIDE 26

n+ n- non-depleted region n- non-depleted region n- depleted gap region n

Next generation SiMPl devices

Jelena Ninkovic Light 2011, Ringberg Castle, Germany 26

TDC, Photon counter, active recharge Cell electronics Cell electronics

Topologically flat and free surface High fill factor Sensitive to light

sensor wafer handle wafer

  • n sensor wafer
  • 2. bond sensor wafer

to handle wafer

  • 3. thin sensor side

to desired thickness

  • 4. process SiMPl arrays
  • n top side

sensor wafer handle wafer

  • 1. Structured implant on backside
  • 5. Etching backside

& flip chipping on back side

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SLIDE 27

n+ n- non-depleted region n- non-depleted region n- depleted gap region n

Next generation SiMPl devices

Jelena Ninkovic Light 2011, Ringberg Castle, Germany 27

TDC, Photon counter, active recharge Cell electronics Cell electronics

Topologically flat and free surface High fill factor Sensitive to light

sensor wafer handle wafer

  • n sensor wafer
  • 2. bond sensor wafer

to handle wafer

  • 3. thin sensor side

to desired thickness

  • 4. process SiMPl arrays
  • n top side

sensor wafer handle wafer

  • 1. Structured implant on backside
  • 5. Etching backside

& flip chipping on back side

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SLIDE 28

Jelena Ninkovic 28

Summary

Silicon photomultiplier array with individual quench resistors, integrated into the silicon bulk - SiMPl detector

  • Required flexibility for quench resistor adjustment comes with wafer bonding

technique (for small pixels an epitaxial layer is also suitable)

  • No polysilicon resistors, contacts and metal necessary at the entrance window
  • Geometrical fill factor is given by the need of cross talk suppression only
  • Very simple process, relaxed lithography requirements

Prototype production finished – quenching works , first measurements very promising, functional devices with very high fill factor and low cross talk Next generation SiMPl devices with electronics interconnected

  • on front side can be used for trackers at future colliders
  • on back side  high sensitivity, high fill factor digital SiPM

Light 2011, Ringberg Castle, Germany

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SLIDE 29

Jelena Ninkovic Light 2011, Ringberg Castle, Germany 29

Thank you for your attention!