Redefine Optical Devices I ntegration and Manufacturing through - - PowerPoint PPT Presentation

NanoOpto - Confidential

1

Redefine Optical Devices’ I ntegration and Manufacturing through Nano-engineering

Jian Jim Wang Chief Technology Officer NanoOpto Corporation New Jersey, USA www.NanoOpto.com

April 23, 2005 WOCC 2005 Newark, NJ

NanoOpto - Confidential

2

Optics, a déjà vu of Electronics...

“Here we were in a factory that was making all these transistors in a perfect array on a single wafer and then we cut them apart into tiny pieces and had to hire thousands of women with tweezers to pick them up and try to wire them together. I t just seemed so stupid. I t’s expensive, it’s unreliable, it clearly limits the complexity of the circuits you can build. I t was an acute problem. The answer was, of course, don’t cut them apart in the first place. But nobody realized that then.”

• Robert Noyce

“Tyranny of Numbers” Applied to Optics

Manual assembly

Dominates optical circuit manufacture and costs

Interconnection inefficiency

Increases power requirements, limits applications

Limits to reliability

Requires tolerance balancing and limits functionality

Limits in design complexity

Reduces functionality and raise cost

Drivers: Size, Cost, Reliability, Functionality

NanoOpto - Confidential

3

I ntegrated optics is a broadly enabling technology

TIME TIME PERFORMANCE PERFORMANCE

To integrated circuits From discrete components From From discrete / bulk optics discrete / bulk optics To integrated

• ptical

components

Criteria for Success:

• 1. Building block

technology

• 2. Means for integration
• 3. High volume

production capability

Optical circuits are applied in a broad range of industries There is a continuing requirement to improve cost and capability in all applications

NanoOpto - Confidential

4

A broad range of optical functions are possible by modifying structure and materials

NanoOpto - Confidential

5

Why nano-optics?

Patterning material on a nano-meter scale allows us to tailor the fundamental optical properties by controlling

Geometry Materials Integration

The resulting optical devices change the cost / capability equation for optical components via

New functionality New architectural possibilities Lower cost through self-integration Lower cost by integrating with other technologies Lower cost through ease of assembly Lower cost through higher volumes

NanoOpto - Confidential

6

Nano optic enabled functions

Polarization Management Polarizers Polarization beam splitters/ combiners Phase Management True zero-order waveplates Trim retarders Wavelength Management Notch and square-top filters Fixed and tunable filters Focal Management Waveguides Anti-reflective coatings Lens arrays Polarization Management Polarizers Polarization beam splitters/ combiners Phase Management True zero-order waveplates Trim retarders Wavelength Management Notch and square-top filters Fixed and tunable filters Focal Management Waveguides Anti-reflective coatings Lens arrays

Two dimensional grating with feature size of 100 nm One dimensional grating with feature size ~100 nm Rings with spacing 50 nm and period 150 nm

NI R

(1000 – 3000 nm)

NI R

(1000 – 3000 nm) Near I R (700 – 1000 nm) Near I R (700 – 1000 nm) Visible (400 – 700 nm) Visible (400 – 700 nm) UV (sub 400 nm) UV (sub 400 nm)

Wavelength

Nano-structured waveguide

NanoOpto - Confidential

7

Nano-lithography Overview

Conventional nano-lithography Photolithography 10 years and $10 billions investment between each generation Currently 193 nm, chemically amplified resist, 80 nm resolution,

100 wafers (300mm) per hour, 26 x 32 mm field: $40M/tool

X-ray lithography (EUV) E-beam lithography Ion-beam lithography Non-conventional nano-lithography Mold assisted lithography (nanoimprint, embossing, NPT, …) Nano-pen lithography (AFM based …) Soft-lithography (George Whitesides, Havard)

16 13.5 EUV 53 157 F2 64 193 ArF 83 248 KrF 122 365 I 145 436 G Minimal Linewidth (nm) Wavelength (nm) Generation

NanoOpto - Confidential

8

Mold Assisted Lithography

Mold Assisted lithography primer:

Step 1. Impress mold containing negative

• f the desired structure.

Step 2. Separate mold, leaving nano- pattern impression in resist. Step 3. Etch resist to transfer pattern to target layer. mold resist target material substrate

1 1 2 2 3 3

NanoOpto - Confidential

10 nm 10 nm 15 nm

Resolution is non-issue

• 1. S. Y. Chou, et. al., Science, 272, 85 (1996).
• 2. S. Y. Chou, et. al., J. Vac. Sci. Technol. B 15, 2897 (1996).

NanoOpto - Confidential

10

A Waveguide DFB/ DBR Structure by Nano-imprint Lithography

• J. Wang et. al., J. Vac. Sci. Tech., 17 (6) 2957-2960 (1999).

NanoOpto - Confidential

Spacing: 100 nm Period: 200 nm Spacing: 20 nm Period: 100 nm Spacing: 50 nm Period: 150 nm

Random Patterns

• M. T. Li, J. Wang, L. Zhuang, and S. Y. Chou, Appl. Phys. Lett., 76 (6), pp. 673-675 (2000).

NanoOpto - Confidential

12

Nano-pattern Replication Machine

Transparent bottom plate Top press plate Cushion layer Mold/substrate Spacer Vacuum enclosure UV lamp

6” whole wafer patterning capability Uniform nano-pattern replication ensured by both spin-coating process and cushion layer design High throughput process: 30 wafers/ hour throughput, only 5 seconds UV curing Scalable design: 8”, 12”

• J. Wang, L. Chen, S. Tai, D. Deng, P. Sciortino, J. Deng, and F. Liu,

“Wafer based nano-structure manufacturing for integrated nano-optic devices,”

• J. Lightwave Technology, Vol. 23, No. 2, 474 – 485 (2005).

NanoOpto - Confidential

Nano-pattern Replication Tool Development

NanoOpto - Confidential

14

Single-layer Spin Coated UV Curable Resist for Nano-pattern Replication

20 40 60 80 100 120 140 160 180 200 3/14 3/24 4/3 4/13 4/23 5/3 5/13 5/23 Date

Thickness (nm)

4” wafer

175.2 174.8 175.0 175.3 175.1

In nanometers

Low-viscosity UV curable resin as resist for nano-pattern replication Spin coat compatible single layer process directly onto substrate (glass, silicon, GaAs, I nP…) Can be spin coated very uniformly: comparable to photoresist Fast UV curing speed: 5 seconds Post-cured resist with excellent mechanical, thermal, chemical and etching properties Lift-off capable

NanoOpto - Confidential

15

Right after nano-pattern replication …

NanoOpto - Confidential

16

Deep RI E …SiO2 Gratings (I )

NanoOpto - Confidential

17

Nano-optic Polarizers/ Polarizing beam splitter/ combiner – I ntegration is the key for our vision

Excellent performance: Broadband (ARC dependent) from 1200 nm to > 1800 nm > 98% transmission (< 0.1 dB), > 43 dB extinction ratio Only < 1 µm in total (active layer) thickness Fully compatible semiconductor manufacturing process Currently 4” in-diameter wafer process, can be upgraded to 8” to 12” Can be integrated onto almost anything: garnet, LiNbO3, YAG, YVO4, InP, Si, GaAs…. Can be fabricated onto crystal facets, laser facets, VCSEL surfaces The blocked polarization is highly reflective (> 97% reflection) a perfect broadband polarization mirror, excellent as laser mirrors for VCSELs and edge-emitting lasers Low-cost thanks to semiconductor process: ~ $0.01/mm2 Pixellated polarizer array: excellent for array applications

50 µm thin 4”-size polarizer: So thin to be bendable A pixellated polarizer

NanoOpto - Confidential

18

Telecom Polarizer

NanoOpto - Confidential

19

Performance Comparison With CuPoTM and PolarCorTM

Active-layer thickness: ~ 1 µm One surface coating Higher power handling capability due to reflective blocking No light scattering issue, proved by customer Environment friend manufacturing method Active-layer thickness ~ 30 µm Two surfaces for 40 dB One surface only

• ffers 23 dB

Lower power handling due to absorptive blocking Light scattering issue due to nano- particles Potential environment issue of manufacturing method Active-layer thickness ~ 30 µm Two surfaces for 40 dB Lower power handling due to absorptive blocking Light scattering issue due to nano- particles Notes 100 mm x 100 mm 0.2 mm, 0.1 mm and thinner

• Max. 15 mm x 15 mm

0.2 mm thick Max Size N/ A 0.2 mm thick Size and thickness > 40 dB > 40 dB > 40 dB Extinction ratio/ I solation 98% (< 0.1 dB) 1310, 1480, 1550 nm 98% (< 0.1 dB) 1310, 1480, 1550 nm < 0.1 dB 1310, 1480, 1550 nm Transmittance/ I nsertion loss

NanoOpto PolarCorTM CuPoTM Performance

NanoOpto - Confidential

20

Performance of the nano-wire-grid polarizer

5 10 15 20 25 30 35 40 45 50

1520 1530 1540 1550 1560 1570

Wavelength (nm) Extinction ratio (dB)

94 94.5 95 95.5 96 96.5 97 97.5 98 98.5 99 1500 1520 1540 1560 1580

wavelength (nm) Transmittance (%)

84 86 88 90 92 94 96 98

• 60
• 40
• 20

20 40 60

Angle (degree) Transmittance (%)

NanoOpto - Confidential

21

4”-wafer Telecom Polarizer: Extinction Ratio

NanoOpto - Confidential

22

4” nano-wire-grid polarizer wafers: performance distribution

50 100 150 200 250 300 350 400 450 500 0.96 0.965 0.97 0.975 0.98 0.985 0.99 0.995 1

Total Energy Efficiency (%) PDF

BJW3613 BJW3619 BJW3620 BJW3621 BJW3701 BJW3702 BJW3703 BJW3704 BJW3705 BJW3706 BJW3707 BJW3708 BJW3709 BJW3710 BJW3711 BJW3712 BJW3713 BJW-A-3506 BJW-A-3508 BJW-A-3509

0.05 0.1 0.15 0.2 0.25 0.3 0.35 10 20 30 40 50 60

Transmission Extinction Ratio (dB) PDF

BJW3613 BJW3619 BJW3620 BJW3621 BJW3701 BJW3702 BJW3703 BJW3704 BJW3705 BJW3706 BJW3707 BJW3708 BJW3709 BJW3710 BJW3711 BJW3712 BJW3713 BJW-A-3506 BJW-A-3508 BJW-A-3509

NanoOpto - Confidential

23

A complete quarter-wave-plate for DVD Optical Head

NanoOpto - Confidential

24

4”-wafer DVD quarter-wave-plate: Phase Retardation

25

World Smallest Optical I solators

~ 0.58 mm

NanoOpto - Confidential

26

World Smallest-Possible Free-Space Optical I solators – Our Vision

Dice Dice Garnet, 300 µm or 500 µm thick CuPoTM, 200 µm thick CuPoTM, 200 µm thick Epoxy, ~ µm thick

~ 900 µm for 1550 band ~ 700 µm for 1300 band Similar to height Dicing aspect-ratio issue

Garnet, 300 µm or 500 µm thick

Nano-Polarizer Coating ~ 1 µm ~ 500 µm for 1550 band ~ 300 µm for 1300 band Similar to height Dicing aspect-ratio issue

Conventional Approach Nano Monolithically Integrated Approach

Improve performance due to less interfaces, semiconductor process alignment accuracy Improve reliability (epoxy-free in the light pass, no curing caused stress release issue) and power handling capability Add system design freedom due to thinner/smaller isolator size Reduce cost (no alignment, bonding, and curing assembly steps) Significant cost reduction (can dice up to 4 times more isolators

• ut of a same garnet wafer)

Fabrication cost for nano-polarizer coating is low (< 10 cents/mm2) Able to address double-stage isolators with all above advantages

NanoOpto - Confidential

27

Free-space Optical I solators – Current sPonG-isolator Process

1 mm ~ 1 µm

Garnet Garnet Garnet

CuPoTM

epoxy Package If needed

Nano-optic design/simulation Garnet/ARC/nano-pol/ARC

• verall performance optimization

Nanofabrication on garnet coatings/nanopatterning/etching/ trench fill/coatings Epoxy/bonding with CuPo Testing/Mapping Dicing

11 mm x 11 mm Yield map 11 mm

(sPonG)

NanoOpto - Confidential

28

Performance of the isolators based on monolithically integrated semi-isolators

33 33 31 30 31 32 32 34 30 Isolator #3 31 30 28 48 32 35 27 34 38 Isolator #2 38 30 33 42 30 32 37 28 32 Isolator #1 1565 nm 1550 nm 1529 nm 1565 nm 1550 nm 1529 nm 1565 nm 1550 nm 1529 nm 85 oC 25 oC 0 oC S/N Isolation (dB) 0.24 0.23 0.21 0.26 0.21 0.18 0.24 0.20 0.17 Isolator #3 0.25 0.25 0.24 0.25 0.23 0.21 0.26 0.23 0.22 Isolator #2 0.26 0.25 0.22 0.26 0.27 0.21 0.25 0.26 0.20 Isolator #1 1565 nm 1550 nm 1529 nm 1565 nm 1550 nm 1529 nm 1565 nm 1550 nm 1529 nm 85 oC 25 oC 0 oC S/N Insertion loss (dB)

NanoOpto - Confidential

29

Technology Uniqueness: Trim Retarder example

Design/ Simulation Substrate preparation Nano-pattern replication Semiconductor Nano-process Testing/ Backend patent

patent Know-How patent

Nanostructure Filling/ Nano-coating

NanoOpto - Confidential

30

I ntegration:

Building I ntegrated Circuits

Trench Filling Visible PBS/POL Quarter wave plate Monolithically Integrated Two Functions

NanoOpto - Confidential

31

4 dimensional, integrated optics

Nano-optic structures can be combined to create complex

• ptical

functions Nano Nano-

• optic
• ptic

structures can structures can be combined be combined to create to create complex complex

• ptical
• ptical

functions functions

Monolithic integration

Pixel arrays Multi-layer structures

Hybrid integration

Arbitrary substrates Dynamic substrates

Monolithic integration

Pixel arrays Multi-layer structures

Hybrid integration

Arbitrary substrates Dynamic substrates

Polarization Beam Splitter Waveplate

Horizontal pixilation Vertical layering 1 2 3 4 Material selection Dynamic layers Horizontal pixilation Vertical layering 1 2 3 4 Material selection Dynamic layers

NanoOpto - Confidential

32

Nano-optic integration (1): * Quarter wave plate * Polarizing beam splitter * Diffraction grating

• n a single chip

Evolution path for nano-optic device functionality

Nano-optic integration (2): * Achromatic QWP * Broadband PBS * Diffraction grating

• n a single chip

Quarter wave plate

Optical Drive

NanoOpto - Confidential

33

Long-Term Vision of NanoOpto Technology – (1)

Subwavelength and/ or Nano-structured

• ptical materials and applications

Generating new artificial optical materials and applications based on sub- wavelength/ Nano- structure engineering and refractive index engineering – for applications covering from DUV to I R Control light propagation (Subwavelength/ Nano-optic optical lenses) Control light confinement (Photonic crystals) Control light emission and detection (Active components) Tailoring the dielectric properties of materials for synthesizing artificial dielectrics and metals Tailoring the dispersion properties Controlling the polarization, color and antireflection properties of materials Exalting resonance phenomena for various applications like filtering or photodetection

Subwavelength Optical Lens based on optical nano-engineering

• M. Li, J. Wang, Appl. Phys. Lett., 76, (2000).

NanoOpto - Confidential

34

Long-Term Vision of NanoOpto Technology – (2)

I ntegrated Optics based on Optical Nanostructures

I ntegration on active optical substrates: integrated isolators I ntegrated on active optical devices: nano-optical polarization mirrors for laser/ crystal facets Planar Lightwave Circuits based

• n nano-optical engineering

I ntegration of polarizer, waveplate, filter, lens together Array optical devices based on nano-optical engineering

Subwavelength Nano-optic Lens

NanoOpto - Confidential

35

Full Nano-optic Integration

Lateral I ntegration 3-D integration Detector Filter Polarizer Lens Detector array Filter array Polarizer array Lens array

Fiber bunch

NanoOpto - Confidential

36

Technology Leadership

First commercialization of the I mprint Lithography technology First I mprint Lithography Production Line in the world Produced the world’s largest acreage of optical nano-structures First successful commercialization of nano-structure based standalone

• ptical components such as I R polarizers/ PBS, quarter waveplates and

trim retarders. First successful commercialization of nano-structure based integrated

• ptical components

First commercialization of immersed/ embedded nanostructures for

• ptical applications

Built the world’s strongest I P portfolio in nano-optic device fabrication, integration and applications

NanoOpto - Confidential

37

Summary: Company information

Founded Feb. 2001, $45M Capital to date

Nano-technology applied to integrating

• ptics

Shipping first products: Telecom

Consumer optics

ISO9001 certified nano- fabrication facilities C-round closed

1600 Cottontail Lane, Somerset, New Jersey, USA

Experienced Leadership Team

NanoOpto - Confidential

38

NanoOpto fabrication facility overview

Clean rooms and labs

3 clean room zones: Class 10, 100 and 1000 Zoning is based on process needs Classic bay and chase layout Additional lab space is used for testing and development

Fabrication capabilities:

Nano-structured mold creation End-to-end nano-pattern transfer wafer processing Deposition and etching Optical testing

NanoOpto is an I SO9001-2000 registered company

Registration achieved in Dec. 2002

Wafer Fab and Labs Clean Room 3