Microstructural development in model ErT 2 films Gillian Bond, Jim - - PowerPoint PPT Presentation

microstructural development in model ert 2 films
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Microstructural development in model ErT 2 films Gillian Bond, Jim - - PowerPoint PPT Presentation

Microstructural development in model ErT 2 films Gillian Bond, Jim Browning, and Emily Schmidt New Mexico Tech and SNL Approach Study microstructural evolution in ErT 2 films - as a function of time - as a function therefore of He


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SLIDE 1

Microstructural development in model ErT2 films

Gillian Bond, Jim Browning, and Emily Schmidt

New Mexico Tech and SNL

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SLIDE 2

Approach

  • Study microstructural evolution in ErT2 films
  • as a function of time
  • as a function therefore of He concentration
  • Use model films
  • TEM investigations performed in parallel

with neutron scattering

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SLIDE 3

Samples

  • {100} Si wafer as substrate
  • 1000 Å Mo
  • 5000 Å Er
  • Samples prepared by Loren Espada (SNL)
  • Er loaded with tritium by Tom Venhaus (LANL)
  • No subsequent thermal treatment
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SLIDE 4

Cross-sectional TEM samples

  • Wafer with films cleaved into strips
  • Strips mounted in sandwich configuration
  • Cross-section cut, ground and polished
  • Sample dimpled until film thickness ~ 10 μm
  • Ion milled at ~3.5 -

4° and 5kV until perforation

  • Examined in JEOL JEM-2000FX TEM at 200 kV
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SLIDE 5

Helium bubbles on {111} planes

a) Bright-field transmission electron micrograph (827 days) b) Selected-area diffraction pattern close to <110> zone axis a b

  • Two sets of plate-like helium bubbles are visible

(at an angle of ~72°)

  • Helium bubbles lie on {111} planes
  • No indication of denuded layer in this model system
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SLIDE 6

Helium bubbles 62 days after tritium loading

10 nm

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SLIDE 7

Additional diffraction spots (62 days)

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SLIDE 8

Helium bubbles 62 days after tritium loading

10 nm

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SLIDE 9

ErT2 and Mo films (820 days)

Note much smaller grain size of Mo, waviness of Er/Mo interface, and presence of particle of another phase

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SLIDE 10

ErT2 film (820 days)

Note milling artifacts, and presence of particle

  • f another phase with associated cavitation
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SLIDE 11

5 10 15 4 8 12 16 Count

Bubble size in nm Histogram of bubble sizes (62 – 64 days after loading) [n = 56]

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SLIDE 12

5 10 15 20 25 30 35 4 8 12 16 Count

Bubble size in nm Histogram of bubble sizes (106 days after loading) [n = 108]

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SLIDE 13

5 10 15 20 25 30 35 2 6 10 14 18 22 26 30 34 38 42 46 50 Count

Bubble size in nm Histogram of bubble sizes (820 – 846 days after loading) [n = 214]

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SLIDE 14

6 8 10 12 14 16 200 400 600 800 1000

Mean bubble size (nm) Time after loading (days)

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SLIDE 15

15 20 25 30 35 40 45 50 55 200 400 600 800 1000

Maximum bubble size (nm) Time after loading (days)

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SLIDE 16

Summary

  • Er grain size is much larger than Mo grain size,

and Er “smoothes over” undulations in Mo surface (confirmed by AFM)

  • Plate-like He bubbles are already present at 62

days after tritium loading, lying on {111} planes

  • Mean bubble size increases with time
  • from 6.64 nm15.74 nm between 62 days and

286 days

  • Some larger second-phase particles are seen
  • Indication that fine precipitation may be occurring
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SLIDE 17

Future work

  • Characterization of films at shorter times

after loading, to study initial development

  • f He bubbles
  • Characterization of films over longer times,

to follow microstructural development up to helium release

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SLIDE 18

Future work

  • Study possibility of fine precipitation
  • Look for other microstructural damage
  • Look for influence of single-crystal Si

substrate

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SLIDE 19

Future work

  • Comparison of TEM and SANS data
  • SANS on series of samples stacked 45°/45° angles
  • Thick films (~50,000 Å Er)
  • Films on {111} Si wafers
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SLIDE 20

Acknowledgement

Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy under contract DE-AC04-94AL85000.