SLIDE 1
Technology Department
2 April 2015 A.Adraktas 1
MKD 3D field calculations MKD 3D field calculations
- A. Adraktas
Technology Department
2 April 2015 A.Adraktas 2
A. Adraktas Acknowledgments: V. Senaj MKD meeting, 2 April 2015 2 - - PowerPoint PPT Presentation
A. Adraktas Acknowledgments: V. Senaj MKD meeting, 2 April 2015 2 - - PowerPoint PPT Presentation
Technology MKD 3D field calculations Department MKD 3D field calculations A. Adraktas Acknowledgments: V. Senaj MKD meeting, 2 April 2015 2 April 2015 A.Adraktas 1 Technology MKD 3D field calculations Department 3D field calculations
SLIDE 2
SLIDE 3
Technology Department
2 April 2015 A.Adraktas 3
MKD 3D field calculations
3D field calculations for the existing GTO stack
SLIDE 4
Technology Department
2 April 2015 A.Adraktas 4
MKD 3D field calculations
3D field calculations for the existing GTO stack
SLIDE 5
Technology Department
2 April 2015 A.Adraktas 5
MKD 3D field calculations Calculation of inductance of model
Based on previously existing models in opera 2d the inductance of the gto was calculated to L≈132nH
SLIDE 6
Technology Department
2 April 2015 A.Adraktas 6
MKD 3D field calculations Conclusions
- According to the simulations high electric field is predicted
near the surface of the araldite around the ground busbar where the discharges have benn observed. There is also a high field near the surface of the capacitor stack. Moving the ground busbar in a larger distance from the HV conductor will probably reduce the field significantly
- The inductance prediction is based on a previously existing
- model. If we assume current density to be in a larger radius