4nterconnect !assan Wassel 6 7 Mohit !iwari 6 7 9onathan :alamehr ; 7 - - PowerPoint PPT Presentation

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4nterconnect !assan Wassel 6 7 Mohit !iwari 6 7 9onathan :alamehr ; 7 - - PowerPoint PPT Presentation

!owards Chip-scale 1lasmonic 4nterconnect !assan Wassel 6 7 Mohit !iwari 6 7 9onathan :alamehr ; 7 <u>e !heogara@an ; 7 9enniAer Bionne C 7 Drederic Chong 6 and !imothy Sherwood 6 6 Computer Science G HC Santa Iarbara ; Klectrical and


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SLIDE 1

!owards Chip-scale 1lasmonic 4nterconnect

!assan Wassel67 Mohit !iwari67 9onathan :alamehr;7 <u>e !heogara@an;7 9enniAer BionneC7 Drederic Chong6 and !imothy Sherwood6

6Computer Science G HC Santa Iarbara ;Klectrical and Computer Kngineering G HC Santa Iarbara CMaterials Science and Kngineering G StanAord

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SLIDE 2

! Motivation ! 4ntroduction to 1lasmonics ! 1ower Models and Mesults ! Conclusion

Nhy 1lasmonicsO

! 1hotonics is able to provide

"Pigh bandwidth via NBM "<ow latency Qno latching or buAAeringR "Bistance-independent energy consumption

! Powever7

! 1hotonic component siSes are limited by the diAAraction limitT

Passan Nassel N4UBS VWXW X

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SLIDE 3

! Motivation ! 4ntroduction to 1lasmonics ! 1ower Models and Mesults ! Conclusion

! <ight cannot be conAined in spaces less than lWYVn where lW is the Aree-space wavelength and n is the reAractive indeZ oA the materialT ! Micrometer siSed components lead to high capacitances which limits bandwidth and increases latency and power consumption Qbest >nown is [W A9YbitR\V]

Passan Nassel N4UBS VWXW V

BiAAraction limit

4mages are ta>en Arom \X]T

\X] ^ramotnev !t#$%&#'1lasmonics (!)*n,#t-!#,i//0$1ti*n#%i2it&3#!"#$%&'()*#*+,-.7 volT _7 9an VWXWT \V] Meed !t#$%&#'4i%i1*n#*5ti1$%#2*,u%$t*0s&3#!"#$%&'()*#*+,-.7 volT _7 9ulT VWXWT

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SLIDE 4

! Motivation ! 4ntroduction to 1lasmonics ! 1ower Models and Mesults ! Conclusion

W XWW VWW `WW _WW [WW aWW bWW W XWWW VWWW `WWW _WWW [WWW aWWW )nergy per bit 1f34 5in6 length 1!"4 Klectrical 1hotonic

Passan Nassel N4UBS VWXW `

<ength vsT Knergy 1er Iit

Klectrical results are obtained using Orion VTW Aor `V nm Q<:!RG ` ^PS with :dd d X :T 1hotonic lin> is modeled using electrical components parameters Arom Iatten et al \PO!4 VWWe] and ring modulators \Kirman et al7 AS1<OS VWXW]

Can plasmonics reduce the minimum distance at which photonic lin>s are energy eAAicientO

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SLIDE 5

! Motivation ! 4ntroduction to 1lasmonics ! 1ower Models and Mesults ! Conclusion

Outline

! Motivation ! 1lasmonics

! SurAace 1lasmon 1olaritons ! Sources ! Naveguides ! Modulators ! Betectors ! CMOS Compatibility

! 1ower Models h Mesults ! Conclusions

Passan Nassel N4UBS VWXW _

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SLIDE 6

! Motivation ! 4ntroduction to 1lasmonics ! 1ower Models and Mesults ! Conclusion

KM Aield S>in depth QVW nmR Metal Bielectric

SurAace 1lasmon 1olaritons

SurAace plasmon polaritons QS11R are electromagnetic waves that are coupled to Aree electron collective oscillations in a metalT " Maintains the Areiuency oA photonics at much shorter wavelength ! Ohmic losses limit the propagation distances

Passan Nassel N4UBS VWXW [

4ncident <ight

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SLIDE 7

! Motivation ! 4ntroduction to 1lasmonics ! 1ower Models and Mesults ! Conclusion

! Klectrical eZcitation

! Uot mature QXa mN Aor Aew mm propagationR \X]

! Optical KZcitation

! On-chip

! Uanolaser has been demonstrated \V]

! OAA-chip laser source

! CN laser is coupled to plasmonics with coupling losses oA XTX dI per transitionT

Passan Nassel N4UBS VWXW a

S11 Source

\X] Nalters etT al7 A silicon-based electrical source oA surAace plasmon polaritonsT Uature Materials7 jQXRkVX8V[7 Becember VWWjT \V] 9:;:#<i%%&#'Uanophotonics=#%$s!0s#>*#(!)*n,#,i//0$1ti*n#%i2it:&3#!"#$%&'+"+*#&-)+*/*017 volT _7 UovT VWWjT

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SLIDE 8

! Motivation ! 4ntroduction to 1lasmonics ! 1ower Models and Mesults ! Conclusion

! 4nsulator-metal-insulator Q4M4 or <M-S11R

! Dew cm range with similar conAinement to photonic waveguides \X]

! Metal-insulator-metal QM4M or MBMR

! Dor eZample7 eW mm range is achieved when the core thic>ness oA silverYsilicaYsilver waveguide is V[W nmT\V]

Passan Nassel N4UBS VWXW b

1lasmonic Naveguides

M M 4 M 4 4

\X] lia7 et al7 m^eometries and materials Aor subwavelength surAace plasmon modes7m 9T OptT SocT AmT A VX7 V__V-V__a QVWW_RT \V] Bionne et al7 1lasmon slot waveguidesk !owards chip-scale propagation with subwavelength-scale localiSation7 1hysical Meview I7 volT b`7 VWWaT

Drom \X]

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SLIDE 9

! Motivation ! 4ntroduction to 1lasmonics ! 1ower Models and Mesults ! Conclusion

Iends are loss-Aree in MBM plasmonic waveguides \X] Pigh eAAiciency coupling Arom and two photonic waveguides QXTX dI per transition \V]R !-splitter and n- Splitters has been proposed \[Wo loss]T

Passan Nassel N4UBS VWXW e

1assive Bevices

\X] :eronis !t#$%&#'?!n,s#$n,#s5%itt!0s#in#2!t$%-dielectric-metal subwavelength plasmonic @$A!>ui,!s&3#233/,&4'()1.,-.'5&##&%.7 volT eb7 VWW[T \V] Belacour et al7 KAAicient Birectional Coupling between Silicon and Copper 1lasmonic Uanoslot B$A!>ui,!s=#t*@$0,#9!t$%CDEi,!C4i%i1*n# Uanophotonics7 !"+* 5&##&%. VWXW 67 QeR

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SLIDE 10

! Motivation ! 4ntroduction to 1lasmonics ! 1ower Models and Mesults ! Conclusion Passan Nassel N4UBS VWXW j

1lasmonic Modulators

\X] Bionne et al7 1lasMOStork a metal-oZide-Si Aield eAAect plasmonic modulatorT7 Uano letters7 volT j7 DebT VWWjT \V] Cai !t#$%:&#'F*25$1t&#-i>--speed and power-eAAicient electrooptic plasmonic 2*,u%$t*0s:&3#!"+*'/&##&%.7 volT j7 BecT VWWjT

! 1lasMOStor \X] ! Compact Modulator\V]

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SLIDE 11

! Motivation ! 4ntroduction to 1lasmonics ! 1ower Models and Mesults ! Conclusion

Modulator <hotonic >ing Modulator ?3A <lasMOStor ?1A Compact Modulator ?GA Knergy per bit QA9R [W aTe X 4nsertion loss QdIR ` XTX ` Modulation depth QdIR XV pXW p` <ength q Nidth QG2 q G2R XWWW VZV XZWT[ Dreiuency Q^PSR XX p _W p XWW Capacitance QADR [W X_ X Swing voltage Q:R V WTb X

Passan Nassel N4UBS VWXW XW

1lasmonic Modulators

\X] Bionne et al7 1lasMOStork a metal-oZide-Si Aield eAAect plasmonic modulatorT7 Uano letters7 volT j7 DebT VWWjT \V] Cai !t#$%:&#'F*25$1t&#-i>--speed and power-eAAicient electrooptic plasmonic 2*,u%$t*0s:&3#!"+*'/&##&%.7 volT j7 BecT VWWjT \`] Bong et alT m<ow :pp7 ultralow-energy7 compact7 high-speed silicon electro-optic modulator7m OptT KZpress XbQVWWjRT

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SLIDE 12

! Motivation ! 4ntroduction to 1lasmonics ! 1ower Models and Mesults ! Conclusion

! S11 can be detected using photo-detectorsT ! 1lasmonics has been used to enhance the eAAiciency oA photo- detector \X] ! 1lasmonics is being proposed to develop phototransistors7 leading to removal oA the !4AT

Passan Nassel N4UBS VWXW XX

Betectors

HIJ#;$n>#!t#$%:#'Uanometre-scale germanium photodetector enhanced by a near-in/0$0!,#,i5*%!#$nt!nn$&3#!"#$%&'()*#*+,-.7 volT V7 MarT VWWeT

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SLIDE 13

! Motivation ! 4ntroduction to 1lasmonics ! 1ower Models and Mesults ! Conclusion

! Iest plasmonic matels are gold and silverT Powever7 aluminum and copper are also good plasmonic materialsT ! !he dielectric can be silicon7 silicon oZide7 silicon nitride or airT

Passan Nassel N4UBS VWXW XV

CMOS Compatibility

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SLIDE 14

! Motivation ! 4ntroduction to 1lasmonics ! 1ower Models and Mesults ! Conclusion Passan Nassel N4UBS VWXW X`

1lasmonic <in>

Modulator Briver Klectrical Signal Modulator Metal Bielectric <ight Source 1hotonic-to-plasmonic Coupler 1hoto-detector 1lasmonic-to-photon Coupler Meceiver Dront-end Klectrical Signal

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SLIDE 15

! Motivation ! 4ntroduction to 1lasmonics ! 1ower Models and Mesults ! Conclusion

1lasmonic <in> 1ower Model

! Static power d Segments 6 AQcoupler loss7 propagation loss7 modulator insertion lossR ! Bynamic power d Segments 6 activity Aactor6 K1I 6 Iandwidth ! Coupler loss d XTX dIY transition ! 1ropagation loss d WTV dIYmm

Passan Nassel N4UBS VWXW X_

Memory SerialiSer Memory Cloc> Mecovery hBeserialiSer Modulator driver Meceiver Aront-end 1lasmonic MBM Naveguides 1hotonic waveguide carrying light

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SLIDE 16

! Motivation ! 4ntroduction to 1lasmonics ! 1ower Models and Mesults ! Conclusion

X XW XWW XWWW XWWWW XWWWWW W XWWW VWWW `WWW _WWW [WWW aWWW )nergy per bit 1f3/bit4 5in6 length 1!"4 Klectrical 1hotonic 1lasmonic

Passan Nassel N4UBS VWXW X[

Mesults

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SLIDE 17

! Motivation ! 4ntroduction to 1lasmonics ! 1ower Models and Mesults ! Conclusion

Pybrid <in> 1ower Model

! Static power d AQcoupler loss7 propagation loss7 modulator insertion lossR ! Bynamic power d activity Aactor 6 K1I 6 Iandwidth ! Coupler loss d XTX dIY transition ! 1ropagation loss d WTX dIYmm

Passan Nassel N4UBS VWXW Xa

1lasmonic Modulator 1hoto-detector Modulator Briver Klectrical Signal Meceiver Dront-end <ight Source 1hotonic-to-plasmonic Coupler 1lasmonic-to-photon Coupler Silicon 1hotonic waveguide Klectrical Signal

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SLIDE 18

! Motivation ! 4ntroduction to 1lasmonics ! 1ower Models and Mesults ! Conclusion

NBM Pybrid <in>

Passan Nassel N4UBS VWXW Xb

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SLIDE 19

! Motivation ! 4ntroduction to 1lasmonics ! 1ower Models and Mesults ! Conclusion

W XWW VWW `WW _WW [WW aWW bWW W XWWW VWWW `WWW _WWW [WWW aWWW )nergy per bit 1f3/bit4 5in6 length 1!"4 Klectrical 1hotonic Pybrid

Passan Nassel N4UBS VWXW Xe

Mesults

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SLIDE 20

! Motivation ! 4ntroduction to 1lasmonics ! 1ower Models and Mesults ! Conclusion

! 1lasmonics cannot be used Aor wave guidingT ! 1lasmonics can improve the viability oA on- chip photonics7 via energy eAAicient detectors and modulatorsT ! 4t provides a potential oA reducing the minimum distance at which photonics is more energy eAAicient than electrical signalingT

Passan Nassel N4UBS VWXW Xj

Conclusions

!han> your