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Exploiting Latency Variation for Access Conflict Reduction
- f NAND Flash Memory
Jinhua Cui, Weiguo Wu, Xingjun Zhang, Jianhang Huang, Yinfeng Wang* Xi’an Jiaotong University, *ShenZhen Institute of Information Technology
Exploiting Latency Variation for Access Conflict Reduction of NAND - - PowerPoint PPT Presentation
Exploiting Latency Variation for Access Conflict Reduction of NAND Flash Memory Jinhua Cui, Weiguo Wu, Xingjun Zhang, Jianhang Huang, Yinfeng Wang * Xian Jiaotong University, *ShenZhen Institute of Information Technology 1 OUTLINE 1.
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Jinhua Cui, Weiguo Wu, Xingjun Zhang, Jianhang Huang, Yinfeng Wang* Xi’an Jiaotong University, *ShenZhen Institute of Information Technology
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NAND Flash Memory Trends Source: ISSCC’16 Tech. Trends
Flash Cell Size Trends Source: Flash Memory Summit
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Source: Pan et al, “Error Rate-BasedWear-Leveling for NAND Flash Memory at Highly Scaled Technology Nodes”
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Source: Liu et al, “Optimizing NAND Flash-Based SSDs via Retention Relaxation”, Fast 2012
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Lower size (Higher hotness)
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Performance Improvement
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